PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Rev. 01 — 6 February 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. 1.2 Features ■ ■ ■ ■ ■ Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications ■ ■ ■ ■ ■ ■ DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) Portable applications 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat [1] collector-emitter saturation resistance Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Conditions Min Typ Max Unit open base - - 20 V - - 2 A - - 4 A - 140 175 mΩ tp ≤ 300 µs IC = 1 A; IB = 100 mA [1] PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pinning Pin Description 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector Simplified outline 6 5 Symbol 1, 2, 5, 6 4 3 4 1 2 sym014 3 3. Ordering information Table 3: Ordering information Type number PBSS4220V Package Name Description Version - plastic surface mounted package; 6 leads SOT666 4. Marking Table 4: Marking codes Type number Marking code PBSS4220V N6 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 5 V IC collector current - 2 A ICM peak collector current tp ≤ 300 µs - 4 A - 0.3 A - 0.6 A [1] [4] - 0.3 W [2] [4] - 0.5 W [3] [4] - 0.9 W - 150 °C IB base current IBM peak base current tp ≤ 300 µs Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 2 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tamb Tstg Conditions Min Max Unit ambient temperature −65 +150 °C storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. [4] Reflow soldering is the only recommended soldering method. 006aaa424 1.2 Ptot (W) (1) 0.8 (2) 0.4 (3) 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 3 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-sp) 103 Zth(j-a) (K/W) Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] [4] - - 410 K/W [2] [4] - - 250 K/W [3] [4] - - 140 K/W - - 80 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. [4] Reflow soldering is the only recommended soldering method. 006aaa425 duty cycle = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 1 0.02 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 4 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current Conditions Min Typ Max Unit VCB = 20 V; IE = 0 A - - 0.1 µA VCB = 20 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off current VCE = 20 V; VBE = 0 V - - 0.1 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 0.1 µA hFE DC current gain VCE = 2 V; IC = 1 mA 220 480 - VCE = 2 V; IC = 100 mA VCEsat collector-emitter saturation voltage 220 440 - VCE = 2 V; IC = 500 mA [1] 220 410 - VCE = 2 V; IC = 1 A [1] 200 360 - VCE = 2 V; IC = 2 A [1] 120 220 - IC = 100 mA; IB = 1 mA - 35 55 mV IC = 500 mA; IB = 50 mA [1] - 70 95 mV IC = 1 A; IB = 50 mA [1] - 145 180 mV IC = 1 A; IB = 100 mA [1] - 140 175 mV IC = 2 A; IB = 100 mA [1] - 275 355 mV IC = 2 A; IB = 200 mA [1] - 270 350 mV RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA [1] - 140 175 mΩ VBEsat base-emitter saturation IC = 1 A; IB = 50 mA voltage IC = 1 A; IB = 100 mA [1] - 0.95 1.1 V - 1 1.2 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A - 0.8 1.1 V td delay time - 9 - ns tr rise time IC = 1 A; IBon = 50 mA; IBoff = −50 mA - 29 - ns ton turn-on time - 38 - ns ts storage time - 200 - ns tf fall time - 40 - ns toff turn-off time - 240 - ns fT transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz - 210 - MHz Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 11 - pF [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBSS4220V_1 Product data sheet [1] © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 5 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 006aaa662 1000 hFE 006aaa663 1.0 VBE (V) 800 0.8 (1) 0.6 (2) (1) 600 (2) 400 (3) (3) 0.4 200 0 10−1 1 10 102 103 104 IC (mA) 0.2 10−1 1 VCE = 2 V VCE = 5 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values 006aaa664 1 VCEsat (V) 10 102 103 104 IC (mA) Fig 4. Base-emitter voltage as a function of collector current; typical values 006aaa665 1 VCEsat (V) 10−1 10−1 (1) (2) (3) (1) (2) 10−2 10−2 (3) 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 102 103 104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values PBSS4220V_1 Product data sheet 10 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 6 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 006aaa666 1.2 VBEsat (V) 006aaa667 102 RCEsat (Ω) 1.0 (1) 10 0.8 (2) (3) 0.6 1 0.4 (1) (2) (3) 0.2 10−1 1 10 102 103 104 IC (mA) 10−1 10−1 IC/IB = 20 IC/IB = 20 1 10 (1) Tamb = −55 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = −55 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values 006aaa668 2.0 IB (mA) = 8.0 IC (A) 7.2 6.4 103 104 IC (mA) Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa669 103 RCEsat (Ω) 5.6 1.6 102 102 4.8 4.0 (1) 1.2 3.2 10 2.4 (2) 0.8 1.6 1 0.4 (3) 0.8 0 0 1 2 3 4 5 10−1 10−1 1 VCE (V) Tamb = 25 °C 10 102 103 104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 7 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 11. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 IC = 1 A; IBon = 50 mA; IBoff = −50 mA; R1 = open; R2 = 45 Ω; RB = 145 Ω; RC = 10 Ω Fig 12. Test circuit for switching times PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 8 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 9. Package outline 1.7 1.5 6 0.6 0.5 5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 1 2 3 0.18 0.08 0.27 0.17 0.5 1 Dimensions in mm 04-11-08 Fig 13. Package outline SOT666 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBSS4220V [1] Package SOT666 Description 4000 8000 2 mm pitch, 8 mm tape and reel - -315 4 mm pitch, 8 mm tape and reel -115 - For further information and the availability of packing methods, see Section 17. PBSS4220V_1 Product data sheet Packing quantity © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 9 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 11. Soldering 2.75 2.45 2.10 1.60 0.15 (4×) 0.40 (6×) 2.00 1.70 1.00 0.55 (2×) 0.30 (2×) 0.375 (4×) 1.20 2.20 2.50 solder lands placement area solder resist occupied area 0.075 Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 10 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 12. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS4220V_1 20060206 Product data sheet - - - PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 11 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 13. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 16. Trademarks 15. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] PBSS4220V_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 6 February 2006 12 of 13 PBSS4220V Philips Semiconductors 20 V, 2 A NPN low VCEsat (BISS) transistor 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 February 2006 Document number: PBSS4220V_1 Published in The Netherlands