APT40N60JCU2 ISOTOP® Boost chopper Super Junction MOSFET Power Module K D VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 40A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • G S K S D G • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant ISOTOP Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 600 40 30 120 ±20 70 290 20 1 1800 30 39 Unit V A V mΩ W A mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1–8 APT40N60JCU2 – Rev 1 June, 2006 Absolute maximum ratings APT40N60JCU2 All ratings @ Tj = 25°C unless otherwise specified Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 20A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 40A Resistive Switching VGS = 15V VBus = 380V ID = 40A R G = 1.8Ω 2.1 3 Min Typ 7015 2565 212 259 29 Unit Max Unit µA mΩ V nA pF nC 111 20 30 115 ns 10 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 40A, R G = 5Ω 670 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 40A, R G = 5Ω 1100 www.microsemi.com Max 25 250 70 3.9 ±100 980 1206 µJ µJ 2–8 APT40N60JCU2 – Rev 1 June, 2006 Electrical Characteristics APT40N60JCU2 Chopper diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM IF = 30A VR = 400V di/dt =1000A/µs Min 250 500 Tj = 125°C Characteristic Min Typ CoolMos Diode RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Max 1.8 RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Unit V µA 44 Thermal and package characteristics Symbol Typ 1.6 1.9 1.4 pF ns A nC ns nC A Max 0.43 1.21 20 Unit °C/W V 150 300 1.5 °C N.m g 29.2 Typical CoolMOS Performance Curve 0.5 0.4 0.35 0.9 0.7 0.3 0.25 0.5 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Dur ation (Seconds) 1 10 Fig 1, Maximum Effective transient thermal Impe dance, Junction to case vs Pulse Duration www.microsemi.com 3–8 APT40N60JCU2 – Rev 1 June, 2006 Thermal Impedance (°C/W) 0.45 Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration APT40N60JCU2 45 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C, Case Tem perature (°C) Figure 6, DC Drain Current vs Case Temperature www.microsemi.com 4–8 APT40N60JCU2 – Rev 1 June, 2006 ID, DC Drain Current (A) 40 www.microsemi.com 5–8 APT40N60JCU2 – Rev 1 June, 2006 APT40N60JCU2 APT40N60JCU2 www.microsemi.com 6–8 APT40N60JCU2 – Rev 1 June, 2006 Typical Diode Performance Curve www.microsemi.com 7–8 APT40N60JCU2 – Rev 1 June, 2006 APT40N60JCU2 APT40N60JCU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–8 APT40N60JCU2 – Rev 1 June, 2006 Dimensions in Millimeters and (Inches)