MICROSEMI APT33N90JCCU3

APT33N90JCCU3
ISOTOP® Buck chopper
VDSS = 900V
RDSon = 120mΩ max @ Tj = 25°C
ID = 33A @ Tc = 25°C
Super Junction MOSFET
SiC chopper diode
Application
• AC and DC motor control
• Switched Mode Power Supplies
D
Features
•
G
-
S
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
A
A
S
G
•
•
•
D
ISOTOP®
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
900
33
25
75
±20
120
290
8.8
2.9
1940
Unit
V
A
September, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–5
APT33N90JCCU3 – Rev 0
Symbol
VDSS
APT33N90JCCU3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
2.5
500
100
3
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 900V
VGS = 0V,VDS = 900V
VGS = 10V, ID = 26A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
Max
100
Unit
120
3.5
100
mΩ
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
Min
Typ
6.8
0.33
nF
270
VGS = 10V
VBus = 400V
ID = 26A
nC
32
115
70
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω
20
ns
400
25
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
0.9
mJ
0.75
1.3
mJ
0.85
SiC chopper diode ratings and characteristics
IF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
32
56
10
1.6
2.3
200
1000
VF
Diode Forward Voltage
IF = 10A
QC
Total Capacitive Charge
IF = 10A, VR = 600V
di/dt =500A/µs
40
C
Total Capacitance
f = 1MHz, VR = 200V
96
f = 1MHz, VR = 400V
69
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Unit
V
µA
A
1.8
3
V
nC
September, 2009
IRM
Test Conditions
pF
2–5
APT33N90JCCU3 – Rev 0
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APT33N90JCCU3
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
Typ
CoolMOS
SiC Diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-40
Max
0.43
1.65
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
Drain
Anode
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
Dimensions in Millimeters and (Inches)
Typical CoolMOS performance Curve
ZCS
150
100
50
Hard
switching
0
10
15
20
25
30
2.5
2.0
1.5
1.0
0.5
25
2
Eoff
1
0
10
125
150
Eoff
Eon
1
5
100
3
Switching Energy (mJ)
Eon and Eoff (mJ)
VDS=600V
RG=7.5Ω
TJ=125°C
L=100µH
75
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
50
TJ, Junction Temperature (°C)
ID, Drain Current (A)
September, 2009
ZVS
200
ON resistance vs Temperature
3.0
15
20
25
30
ID, Drain Current (A)
35
40
2
Eon
VDS=600V
ID=26A
TJ=125°C
L=100µH
1
0
5
10
15
20
25
30
35
Gate Resistance (Ohms)
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3–5
APT33N90JCCU3 – Rev 0
Frequency (kHz)
VDS=600V
D=50%
RG=7.5Ω
TJ=125°C
TC=75°C
RDS(on), Drain to Source ON resistance
(Normalized)
Operating Frequency vs Drain Current
250
APT33N90JCCU3
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
6V
80
5V
40
0
0
5
10
15
VDS, Drain to Source Voltage (V)
20
Maximum Safe Operating Area
10 ms
ID, DC Drain Current (A)
925
900
25
75
100
125
30
25
20
15
10
5
1
0
1
10
100
1000
25
VDS, Drain to Source Voltage (V)
Ciss
10000
1000
Coss
100
10
Crss
1
0
50
75
100
125
TC, Case Temperature (°C)
150
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
50
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
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10
VDS=400V
ID=26A
TJ=25°C
8
September, 2009
ID, Drain Current (A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
950
DC Drain Current vs Case Temperature
35
100 µs
10
975
TJ, Junction Temperature (°C)
1000
100
1000
6
4
2
0
0
50
100 150 200
Gate Charge (nC)
250
300
4–5
APT33N90JCCU3 – Rev 0
ID, Drain Current (A)
VGS=20, 8V
BVDSS, Drain to Source Breakdown
Voltage
Breakdown Voltage vs Temperature
120
APT33N90JCCU3
Typical SiC Chopper diode performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.8
0.9
1.6
1.4
0.7
1.2
1
0.5
0.8
0.3
0.6
0.4
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
20
100
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
16
TJ=75°C
12
TJ=125°C
8
4
TJ=175°C
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
75
50
TJ=75°C
TJ=125°C
25
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
700
600
500
400
300
200
100
10
100
VR Reverse Voltage
1000
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5–5
APT33N90JCCU3 – Rev 0
1
September, 2009
0