APT5010JVRU2 ISOTOP® Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100mΩ max @ Tj = 25°C ID = 44A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very rugged • Low profile • RoHS Compliant ISOTOP Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFA V IFRMS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 500 44 33 176 ±30 100 450 44 50 2500 30 39 Unit V A V mΩ W A mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. www.microsemi.com 1–7 APT5010JVRU2 – Rev 1 June, 2006 Absolute maximum ratings APT5010JVRU2 All ratings @ Tj = 25°C unless otherwise specified Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min VGS = 10V, ID = 22A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V 2 Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 44A @ TJ=25°C VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Maximum Reverse Recovery Current Qrr Reverse Recovery Charge trr Qrr Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IRRM Unit mΩ V nA pF nC 16 ns 54 5 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 www.microsemi.com Max µA 18 Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs IF = 30A VR = 400V di/dt =1000A/µs Unit 127 VGS = 15V VBus = 250V ID = 44A @ TJ=25°C R G = 0.6Ω Reverse Recovery Time IRRM Typ 7410 1050 390 312 Max 25 250 100 4 ±100 37 Chopper diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C Min Typ 1.6 1.9 1.4 250 500 44 Tj = 125°C Max 1.8 Unit V µA pF ns A nC ns nC A 2–7 APT5010JVRU2 – Rev 1 June, 2006 Electrical Characteristics APT5010JVRU2 Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Min Typ MOSFET Diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.28 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g www.microsemi.com 3–7 APT5010JVRU2 – Rev 1 June, 2006 Typical MOSFET Performance Curve www.microsemi.com 4–7 APT5010JVRU2 – Rev 1 June, 2006 APT5010JVRU2 APT5010JVRU2 www.microsemi.com 5–7 APT5010JVRU2 – Rev 1 June, 2006 Typical Diode Performance Curve www.microsemi.com 6–7 APT5010JVRU2 – Rev 1 June, 2006 APT5010JVRU2 APT5010JVRU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APT5010JVRU2 – Rev 1 June, 2006 Dimensions in Millimeters and (Inches)