DIODES NMSD200B01

NMSD200B01
Lead-free Green
200 mA SYNCHRONOUS RECTIFIER FEATURING
N-MOSFET AND SCHOTTKY DIODE
NEW PRODUCT
General Description
·
NMSD200B01 is best suited for switching voltage regulator
and power management applications. It improves efficiency
and reliability of DC-DC converters used in Voltage Regulator
Modules (VRM) and can support continuous maximum current
of 200mA. It features an ESD protected discrete N-MOSFET
with low on-resistance and a discrete Schottky diode with low
forward drop. It reduces component count, consumes less
space and minimizes parastic losses. The component devices
can be used as a part of a circuit or as a stand alone discrete
device.
6
5
4
1
2
3
Features
·
·
·
·
·
·
·
·
Fig. 1: SOT-363
N-MOSFET with ESD Gate Protection
N-MOSFET with Low On-Resistance (RDS(ON))
Low Vf Schottky Diode
Low Static, Switching and Conduction Losses
D_Q1
NC
A_D1
6
5
4
Good dynamic performance
Surface Mount Package Suited for Automated Assembly
Lead Free By Design/ROHS Compliant (Note 1)
A
D
DMN601K
"Green" Device (Note 2)
SD103AWS
Mechanical Data
D1
Q1
G
SCHOTTKY
NMOS
C
S
·
·
Case: SOT-363
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
·
·
·
Marking & Type Code Information: See Page 7
Case Material: Molded Plastic. "Green Molding" Compound.
UL Flammability Classification Rating 94V-0
1
2
3
Terminal Connections: See Diagram
G_Q1
S_Q1
C_D1
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL- STD -202, Method 208
Fig 2 : Schematic and Pin Configuration
Ordering Information: See Last Page
Weight: 0.016 grams (approximate)
Sub-Components
Reference
Device Type
Figure
DMN601K_DIE (ESD Protected)
Q1
N-MOSFET
2
SD103AWS_DIE
D1
Schottky Diode
2
Maximum Ratings, Total Device
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Pd
200
mW
Power Derating Factor above 25 °C
Pder
1.6
mW/°C
Output Current
Iout
200
mA
Symbol
Value
Unit
Junction Operation and Storage Temperature Range
Tj, Tstg
-55 to +150
°C
Thermal Resistance, Junction to Ambient Air (Note 3)
(Equivalent to one heated junction of N-MOSFET)
RqJA
625
°C/W
Power Dissipation (Note 3)
Unit
Thermal Characteristics
Characteristic
Notes:
1. No purposefully added lead.
2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30911 Rev. 2 - 2
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NMSD200B1
ã Diodes Incorporated
NEW PRODUCT
Maximum Ratings: @ TA = 25°C unless otherwise specified
Sub-Component Device: ESD Protected N-Channel MOSFET (Q1)
Symbol
Value
Unit
Drain Source Voltage
Characteristic
VDSS
60
V
Drain Gate Voltage (RGS <+ 1MOhm
VDGR
60
V
Gate Source Voltage
Continuous
+/-20
VGSS
Pulsed (tp<50 uS)
Drain Current (Page 1: Note 3) Continuous (Vgs=10V)
200
ID
Pulsed (tp<10uS, Duty Cycle<1%)
Sub-Component Device: Schottky Diode (D1)
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
mA
800
IS
Continuous Source Current
V
+/-40
200
mA
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
VR(RMS)
28
V
Foward Continuous Current (Page 1: Note 3)
IFM
350
mA
Non-Repetitive Peak Foward Surge Current @ t<1.0 s
IFSM
1.5
A
RMS Reverse Voltage
Electrical Characteristics:
ESD Protected N-Channel MOSFET (Q1)
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
VBR(DSS)
IDSS
Gate Body Leakage Current, Foward
Gate Body Leakage Current, Reverse
Unit
Test Condition
60
¾
¾
V
VGS = 0V, ID = 10mA
¾
¾
1
mA
VGS = 0V, VDS = 60V
IGSSF
¾
¾
10
mA
VGS = 20V, VDS = 0V
IGSSR
¾
¾
-10
mA
VGS = -20 V, VDS = 0V
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
Zero Gate Voltage Drain Current (Drain Leakage Current)
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply Voltage)
Static Drain-Source On-State Voltage
On-State Drain Current
Static Drain-Source On Resistance
Foward Transconductance
1
1.6
2.5
V
VDS = VGS=10V, ID = 0.25mA
1.65
1.8
3
V
VDS = VGS = 10V, ID = 1mA
¾
0.09
1.5
V
VGS = 5V, ID = 50mA
¾
0.62
1.25
V
VGS = 10V, ID = 500mA
500
¾
¾
mA
VGS = 10V, VDS >=2*VDS(ON)
¾
1.6
3
1.25
2
W
VGS = 5V, ID= 50mA
¾
gFS
80
260
¾
mS
VDS >=2*VDS(ON), ID=200mA
VGS(th)
VDS(on)
ID(on)
RDS (on)
VGS = 10V, ID = 500mA
Dynamic Characteristics
Ciss
¾
¾
50
pF
Output Capacitance
COSS
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
5
pF
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
Switching Characteristics*
Turn-On Delay Time
td(on)
20
ns
Turn-Off Delay Time
td(off)
40
ns
1.5
V
IS
300
mA
ISM
800
mA
Drain-Source (Body) Diode Characteristics and Maximum Ratings
Drain-Source Diode Foward On-Voltage
Maximum Continuous Drain-Source Diode Foward Current
(Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Foward Current
VSD
0.88
VGS = 0V, IS = 300 mA*
* Pulse Test: Pulse width, tp <300 us, Duty Cycle, d £2%
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NMSD200B01
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
V(BR)R
40
¾
¾
V
¾
¾
0.37
¾
¾
0.6
Reverse Breakdown Voltage (Note 4)
Foward Voltage Drop (Note 4)
VFM
Test Condition
IR = 10mA
IF =20mA
V
IF =200mA
Peak Reverse Current (Note 4)
IRM
¾
¾
5
mA
VR = 30V
Total Capacitance
CT
¾
28
¾
pF
VR = 0V, f = 1.0 MHz
Reverse Recovery Time
trr
¾
10
¾
ns
IF=IR= 200 mA, Irr= 0.1xIR, RL= 100 W
Notes:
4. Short duration test pulse used to minimize self-heating effect.
Typical Characteristics
PD, POWER DISSIPATION (mW)
250
200
150
100
50
0
0
25
50
75
150
125
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 3, Max Power Dissipation vs.
Ambient Temperature
Typical N-Channel MOSFET-Q1 (ESD Protected) Characteristics
1.4
0.8
TA = 150° C
VDS = 10V
VGS = 10V
0.7
1.2
TA = 125° C
TA = -55° C
1.0
ID, DRAIN CURRENT (A)
VGS = 6V
ID, DRAIN CURRENT (A)
NEW PRODUCT
Electrical Characteristics: Schottky Barrier Diode (D1)
VGS = 5V
VGS = 8V
0.8
VGS = 4V
0.6
0.4
TA = 25° C
0.6
TA = 85° C
0.5
0.4
0.3
0.2
0.2
0.1
VGS = 3V
0
0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Output Characteristics
DS30911 Rev. 2 - 2
0
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE
Fig. 5 Transfer Characteristics
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NMSD200B01
10
2
VGS(th), GATE THRESHOLD VOLTAGE (V)
VGS = 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
TA = 125° C
1.5
TA = 85° C
TA = 150° C
1
1
TA = -55° C
TA = 25° C
0.5
0
-50
-25
25
0
75
50
100
125
0.1
0.001
150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 Gate Threshold Voltage
vs. Junction Temperature
10
TA = 0° C
TA = -25° C
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 7 Static Drain-Source On-Resistance
vs. Drain Current
1
7
VGS = 5V
Pulsed
TA = 125° C
TA = 25° C
Pulsed
6
TA = 85° C
ID = 300mA
5
TA = 150° C
4
1
3
TA = -55° C
TA = 25° C
TA = 0° C
2
TA = -25° C
ID = 150mA
1
0.1
0.001
0
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 8 Static Drain-Source On-Resistance
vs. Drain Current
0
1
4
2
6
8
10
12
16
14
18
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 9 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
2.5
1
VGS = 10V
Pulsed
VGS = 0V
Pulsed
ID = 300mA
2
ID = 150mA
1.5
1
0.5
IDR, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
VDS = VGS
TA = 125° C
TA = 150° C
0.1
TA = 85° C
TA = 25° C
TA = 0° C
0.01
TA = -25° C
TA = -55° C
0
0.001
-75 -50
-25
0
25
50
75
100 125 150
Tj, JUNCTION TEMPERATURE (° C)
Fig. 10 Static Drain-Source On-State Resistance
vs. Junction Temperature
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0
0.5
1
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Reverse Drain Current
vs. Source-Drain Voltage
NMSD200B01
VGS = 10V
TA= 25°C
Pulsed
0.1
0.01
VGS = 0V
0.001
0.5
0
700
gFS, FORWARD TRANSCONDUCTANCE (mS)
NEW PRODUCT
IS, REVERSE DRAIN CURRENT (A)
1
600
TA = -25° C
500
TA = -55° C
TA = 25° C
400
300
TA = 150° C
200
TA = 125° C T = 85° C
A
100
0
1
0.2
0
0.8
0.6
0.4
ID, DRAIN CURRENT (A)
Fig. 13 Forward Transconductance
vs. Drain Current (VDS > ID *RDS(ON))
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 12 Reverse Drain Current
vs. Body Diode Forward Voltage
IF, INSTANTANEOUS FORWARD CURRENT (A)
Schottky Barrier Diode-D1 Characteristics
1000
1
TA = 125°C
100
TA = 125° C
0.1
TA = 75° C
TA = 75°C
10
TA = 25° C
0.01
1
TA = 25°C
TA = 0° C
0.001
TA = -40° C
TA = 0°C
0.1
TA = -40°C
0.0001
0
200
400
600
0.01
800
1000
5
0
15
10
20
25
30
35
40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 15 Reverse Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 14 Forward Characteristics
30
CT, TOTAL CAPACITANCE (pF)
f = 1.0MHz
25
20
15
10
5
0
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 16 Total Capacitance vs. Reverse Voltage
DS30911 Rev. 2 - 2
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NMSD200B01
NEW PRODUCT
Application Details
Drain
ESD Protected N-MOSFET (DMN601K) and Schottky Barrier Diode
(SD103AWS) integrated as one in NMSD200B01 can be used as a
discrete entity for general applications or part of circuits to function as a
low side switch in a Synchronous Rectifier. The N-MOSFET is selected
based on the input voltage range as the maximum duty cycles can be
greater than 45%. Schottky diode is selected based on instantaneous
Vf (less than 0.75 V) at maximum operation current. The Schottky diode
dissipates very little power because it is on for only a small portion of
the switching cycle. Normally it shows much lower leakage current and
smaller on-resistance (RDS(ON)) even compared to its monolithic
counterpart. This device is designed to improve efficiency and reliability
of synchronous buck converters used in voltage regulator modules
(VRM). The lower Vf of the Schottky diode leads to lower static loss.
Every time the high side MOSFET is turned on in the buck converter,
the low side Schottky diode is forced to recover the stored charge and
there will be lower loss due to the lower Reverse Recovery charge of the
Schottky diode.
Q1
Cathode
D1
Gate
SD103AWS
DMN601K
Source
Anode
Fig 17 : Example Circuit Diagram
It is designed to replace a discrete N-MOSFET and a Schottky diode in
two separate packages into one small package as shown in Fig. 17.
The Schottky diode parallel to the MOSFET body diode is faster and
has lower voltage drop compared to the integrated body diode. Overall
this device consumes less board space and also helps to minimize
conduction or switching losses due to parasitic inductances (e.g. PCB
traces) in power supply applications. (Please see Fig. 18 for one
example of typical application circuit used in conjunction with DC-DC
converter as a part of power management system and Fig. 19 for low
side DC load control.)
Typical Application Circuits
HighSide
Q2
VCC
Body Diode
0
DMN601K
DC-DC Controller
and Driver ICS
LowSide
Main Inductor
Load
Q1
D1
C1
SD103AWS
DMN601K
NMSD200B01
0
Fig. 18 Synchronous Buck Converter with Integrated Schottky Diode
DS30911 Rev. 2 - 2
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NMSD200B01
NEW PRODUCT
5V
R3
1
1k
D2
D1
DC
Load
LED
SD103AWS
U1
1
2
+Vin
+ Vref
2
+
L1
1
OUT
R1
Q1
2
-
10k
DMN601K
1/2AP393
0
R2
NMSD200B01
10M
(Comparator with Hysteresis)
Fig. 19 Low Side DC Load Control
Ordering Information
Notes:
(Note 5)
Device
Marking Code
Packaging
Shipping
NMSD200B01-7
SR1
SOT-363
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
SR1
YM
Marking Information
SR1 = Product Type Marking Code,
YM = Date Code Marking
Y = Year, e.g., T = 2006
M = Month, e.g., 9 = September
Fig. 20
Date Code Key
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Year
2006
2007
2008
2009
Code
T
U
V
W
DS30911 Rev. 2 - 2
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NMSD200B01
NEW PRODUCT
Mechanical Details
SOT-363
A
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
B C
G
H
K
M
J
D
F
L
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
Fig. 21
Suggested Pad Layout: (Based on IPC-SM-782)
E
Z
E
Figure 14
Dimensions
SOT-363*
Z
2.5
C
G
Y
X
G
1.3
X
0.42
Y
0.6
C
1.9
E
0.65
* Typical dimensions in mm
Fig. 22
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the
President of Diodes Incorporated.
DS30911 Rev. 2 - 2
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NMSD200B01