LMN200B02 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR Please click here to visit our online spice models database. General Description LMN200B02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on the input voltage and can support continuous maximum current of 200 mA . It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down resistor at its gate. The component can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 1 2 3 Features • • • • • • Fig. 1: SOT-363 Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) C_Q1 B_Q1 S_Q2 6 5 4 Q1 Mechanical Data • • • • • • • • PNP C DDTB142JU_DIE R2 B R3 470 37K E Case: SOT-363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.006 grams (approximate) Sub-Component P/N R1 S G 10K Q2 NMOS DSNM6047_DIE D 1 2 3 E_Q1 G_Q2 D_Q2 Fig. 2 Schematic and Pin Configuration Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure DDTB142JU_DIE Q1 PNP Transistor 10K 470 ⎯ 2 DSNM6047_DIE (with Gate Pull-Down Resistor) Q2 N-MOSFET ⎯ ⎯ 37K 2 Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Symbol Value PD 200 mW Power Derating Factor above 125°C Pder 1.6 mW/°C Output Current Iout 200 mA Symbol Value Unit TJ,TSTG -55 to +150 °C RθJA 625 °C/W Power Dissipation (Note 3) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Operating and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Equivalent to One Heated Junction of PNP Transistor) (Note 3) Notes: Unit 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30658 Rev. 7 - 2 1 of 9 www.diodes.com LMN200B02 © Diodes Incorporated Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) Characteristic @TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Supply Voltage VCC -50 V Input Voltage Vin +5 to -6 V Output Current IC -200 mA Sub-Component Device: N-MOSFET With Gate Pull-Down Resistor (Q2) @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain Gate Voltage (RGS ≤1M Ohm) VDGR 60 V Gate-Source Voltage Drain Current (Page 1: Note 3) Continuous Source Current DS30658 Rev. 7 - 2 Continuous Pulsed (tp<50 uS) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%) VGSS ID IS 2 of 9 www.diodes.com +/-20 +/-40 115 800 115 V mA mA LMN200B02 © Diodes Incorporated Electrical Characteristics: Pre-Biased PNP Transistor (Q1) Characteristic @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Cut Off Current ICBO ⎯ ⎯ -100 nA Collector-Emitter Cut Off Current ICEO ⎯ ⎯ -500 nA VCE = -50V, IB = 0 Emitter-Base Cut Off Current IEBO ⎯ -0.5 -1 mA VEB = -5V, IC = 0 Collector-Base Breakdown Voltage V(BR)CBO -50 ⎯ ⎯ V IC = -10 uA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 ⎯ ⎯ V IC = -2 mA, IB = 0 VI(OFF) ⎯ -0.55 -0.3 V VCE = -5V, IC = -100uA VOH -4.9 ⎯ ⎯ V VCC = -5V, VB = -0.05V, RL = 1K IO(OFF) ⎯ ⎯ -500 nA VCC = -50V, VI = 0V ⎯ ⎯ -0.15 V IC = -10 mA, IB = -0.5 mA ⎯ ⎯ -0.2 V IC = -50mA, IB = -5mA ⎯ ⎯ -0.2 V IC = -20mA, IB = -1mA ⎯ ⎯ -0.25 V IC = -100mA, IB= -10mA ⎯ ⎯ -0.25 V IC = -200mA, IB= -10mA ⎯ ⎯ -0.3 V IC = -200mA, IB = -20mA OFF CHARACTERISTICS Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) VCB = -50V, IE = 0 ON CHARACTERISTICS Collector-Emitter Saturation Voltage Equivalent On-Resistance* VCE(SAT) RCE(SAT) DC Current Gain hFE Input On Voltage VI(ON) Output Voltage (equivalent to VCE(SAT) or VO(ON) ) VOL ⎯ ⎯ 1.5 Ω IC = -200mA, IB = -10mA 60 150 ⎯ ⎯ VCE = -5V, IC = -20 mA 60 215 ⎯ ⎯ VCE = -5V, IC = -50 mA 60 245 ⎯ ⎯ VCE = -5V, IC = -100 mA 60 250 ⎯ ⎯ VCE = -5V, IC = -200 mA -2.45 -0.7 ⎯ V VO = -0.3V, IC = -2 mA -0.15 V VCC = -5V, VB = -2.5V, Io/II = -50mA /-2.5mA ⎯ -0.065 Ii ⎯ -9 -28 mA Base-Emitter Turn-on Voltage VBE(ON) ⎯ -1.13 -1.3 V Base-Emitter Saturation Voltage VBE(SAT) Input Current ⎯ -3.2 -3.6 ⎯ -4.6 -5.5 V VI = -5V VCE = -5V, IC = 200mA IC = -50mA, IB = -5mA IC = -80mA, IB = -8mA Input Resistor (Base), +/- 30% R2 ⎯ 0.47 ⎯ KΩ ⎯ Pull-up Resistor (Base to Vcc supply), +/- 30% R1 ⎯ 10 ⎯ KΩ ⎯ R1/R2 ⎯ 21 ⎯ ⎯ ⎯ Transition Frequency (Gain Bandwidth Product) fT ⎯ 200 ⎯ MHz Collector Capacitance, (Ccbo-Output Capacitance) CC ⎯ 20 ⎯ pF Resistor Ratio (Input Resistor/Pull-up resistor) +/- 20% SMALL SIGNAL CHARACTERISTICS VCE = -10V, IE = -5mA, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz * Pulse Test: Pulse width, tp<300 μS, Duty Cycle, d<=0.02 DS30658 Rev. 7 - 2 3 of 9 www.diodes.com LMN200B02 © Diodes Incorporated Electrical Characteristics: N-MOSFET with Gate Pull-Down Resistor (Q2) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Symbol Min Typ Max Unit Drain-Source Breakdown Voltage, BVDSS Test Condition V(BR)DSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current (Drain Leakage Current) IDSS ⎯ ⎯ 1 μA VGS =0V, VDS = 60V Gate-Body Leakage Current, Forward IGSSF ⎯ ⎯ 0.95 mA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR ⎯ ⎯ -0.95 mA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) VGS(th) 1 1.9 2.2 V Static Drain-Source On-State Voltage VDS(on) ⎯ 0.10 1.5 ⎯ 0.15 3.75 On-State Drain Current Static Drain-Source On-Resistance RDS(on) Forward Transconductance gFS Gate Pull-Down Resistor, +/- 30% R3 ⎯ 500 ID(on) ⎯ ⎯ 1.6 3 ⎯ 1.4 2 80 240 ⎯ 80 350 ⎯ ⎯ 37 ⎯ V mA Ω mS KΩ VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 115mA VGS = 10V, VDS ≥2XVDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS ≥2XVDS(ON), ID = 115 mA VDS ≥2XVDS(ON), ID = 200 mA ⎯ DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5 pF Turn-On Delay Time tD(on) ⎯ ⎯ 20 ns Turn-Off Delay Time tD(off) ⎯ ⎯ 40 ns VDS = -25V, VGS = 0V, f = 1MHz SWITCHING CHARACTERISTICS VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current Notes: VSD ⎯ 0.90 1.5 V IS ⎯ ⎯ 115 mA ⎯ ISM ⎯ ⎯ 800 mA ⎯ VGS = 0V, IS = 115 mA 4. Short duration pulse test used to minimize self-heating effect. Typical Characteristics 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 (Note 3) 50 0 0 DS30658 Rev. 7 - 2 25 50 150 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Max Power Dissipation vs. Ambient Temperature (Total Device) 175 4 of 9 www.diodes.com LMN200B02 © Diodes Incorporated VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) Typical Pre-Biased PNP Transistor (Q1) Characteristics IC, COLLECTOR CURRENT (A) Fig. 4 VCE(SAT) vs. IC VBE(ON), BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 VBE(SAT) vs. IC 1,000 IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(ON) vs. IC hFE, DC CURRENT GAIN 1 IC, COLLECTOR CURRENT (mA) Fig. 8 hFE vs. IC DS30658 Rev. 7 - 2 5 of 9 www.diodes.com LMN200B02 © Diodes Incorporated ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Typical N-Channel MOSFET (Q2) Characteristics 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 10 Transfer Characteristics 2.2 5 RDS(on), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) 2.0 1.8 1.6 1.4 1.2 4 3 2 1 0 0 -75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 Gate Threshold Voltage vs. Junction Temperature ID, DRAIN CURRENT (A) Fig. 12 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) 4 0 1 ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current DS30658 Rev. 7 - 2 6 of 9 www.diodes.com VGS, GATE SOURCE VOLTAGE (V) Fig. 14 Static Drain-Source On-Resistance vs. Gate-Source Voltage LMN200B02 © Diodes Incorporated IS, REVERSE DRAIN CURRENT (A) RDS(on), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) IS, REVERSE DRAIN CURRENT (A) gFS, FORWARD TRANSCONDUCTANCE (mS) Tj, JUNCTION TEMPERATURE (° C) Fig. 15 Static Drain-Source On-State Resistance vs. Junction Temperature 0.5 DS30658 Rev. 7 - 2 1 1.5 2 2.5 7 of 9 www.diodes.com LMN200B02 © Diodes Incorporated Application Details PNP Transistor (DDTB142JU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN200B02 can be used as a discrete entity for general purpose applications or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 19, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 200 mA. The MOSFET Switch draws no current, hence loading of control circuit is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 20 for one example of a typical application circuit used in conjunction with voltage regulator as a part of a power management system) DDTB142JU Vin Vout C E Q1 PNP B R1 LOAD 10K R2 470 DSNM6047 D Q2 S NMOS G Control R3 37K Fig. 19 Circuit Diagram Typical Application Circuit 5v Supply U1 U2 Load Switch Vin U3 Vin Control Logic Circuit (PIC, Comparator etc) OUT1 1 Control 2 3 GND E_Q1 C_Q1 G_Q2 B_Q1 D_Q2 S_Q2 Point of Load 6 Vout IN OUT 5 4 Gnd Voltage Regulator LNM200B02 Diodes Inc. Fig. 20 Ordering Information Notes: 5. (Note 5) Device Packaging Shipping LMN200B02-7 SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2006 T Jan 1 DS30658 Rev. 7 - 2 2007 U Feb 2 2008 V Mar 3 YM PM2 PM2 = Product Type Marking Code, YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2009 W Apr 4 2010 X May 5 Jun 6 8 of 9 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D LMN200B02 © Diodes Incorporated Mechanical Details A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DS30658 Rev. 7 - 2 9 of 9 www.diodes.com LMN200B02 © Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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