LMN400E01 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET NEW PRODUCT General Description • LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA. It also contains an ESD protected discrete N-MOSFET that can be used as control. The component can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 1 2 3 Features • • • • • • Fig. 1: SOT-363 Voltage Controlled Small Signal Switch N-MOSFET with ESD Gate Protection Surface Mount Package C_Q1 Ideally Suited for Automated Assembly Processes • • • • • • S_Q2 5 4 6 Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) C Mechanical Data • • B_Q1 Q1 PNP Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 DDTB122LU R2 B 220 E R1 10K S DMN601TK G Q2 NMOS D Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 1 2 G_Q2 3 D_Q2 Marking & Type Code Information: See Last Page E_Q1 Ordering Information: See Last Page Fig 2 : Schematic and Pin Configuration Weight: 0.016 grams (approximate) Sub-Component P/N Reference Device Type R1(NOM) R2(NOM) Figure DDTB122LU_DIE Q1 PNP Transistor 10K 220 2 DMN601TK_DIE (ESD Protected) Q2 N-MOSFET 2 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Pd 200 mW Power Derating Factor above 37.5°C Pder 1.6 mW/°C Output Current Iout 400 mA Power Dissipation (Note 3) Thermal Characteristics Symbol Value Unit Junction Operation and Storage Temperature Range Characteristic Tj, Tstg -55 to +150 °C Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor) RθJA 625 °C/W Notes: 1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30750 Rev. 4 - 2 1 of 10 www.diodes.com LMN400E01 Diodes Incorporated NEW PRODUCT Maximum Ratings: @ TA = 25°C unless otherwise specified Sub-Component Device: Pre-Biased PNP Transistor (Q1) Symbol Value Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -50 V Supply Voltage Vcc -50 V Input Voltage Vin +5 to -6 V Output Current IC -400 mA Sub-Component Device: @ TA = 25°C unless otherwise specified ESD Protected N-Channel MOSFET (Q2) Symbol Value Unit Drain-Source Voltage Characteristic VDSS 60 V Drain Gate Voltage (RGS ≤1MOhm) VDGR 60 V Gate-Source Voltage Continuous VGSS Pulsed (tp<50 uS) Drain Current (Page 1: Note 3) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%) Continuous Source Current DS30750 Rev. 4 - 2 ID IS 2 of 10 www.diodes.com +/-20 +/-40 300 800 300 V mA mA LMN400E01 NEW PRODUCT Electrical Characteristics: Pre-Biased PNP Transistor (Q1) Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Cut Off Current ICBO -100 nA VCB = -50V, IE = 0 Collector-Emitter Cut Off Current ICEO -500 nA VCE = -50V, IB = 0 OFF CHARACTERISTICS IEBO -1 mA VEB = -5V, IC = 0 Collector-Base Breakdown Voltage V(BR)CBO -50 V IC = -10 uA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 V IC = -2 mA, IB = 0 VI(OFF) −0.55 -0.3 V VCE = -5V, IC = -100uA VOH -4.9 V VCC = -5V, VB = -0.05V, RL = 1K IO(OFF) -500 nA VCC = -50V, VI = 0V VCE(SAT) -0.15 V IC = -10 mA, IB = -0.3 mA -0.15 V IC = -200mA, IB = -20mA -0.3 V IC = -100mA, IB = -1mA -0.2 V IC = -300mA, IB= -30mA -0.25 V IC = -400mA, IB= -40mA -0.3 V IC = -500mA, IB = -50mA Emitter-Base Cut Off Current Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) ON CHARACTERISTICS Collector-Emitter Saturation Voltage RCE(SAT) 1.125 Ω IC = -400mA, IB = -20mA hFE 70 220 VCE = -5V, IC = -50 mA 70 260 VCE = -5V, IC =- 100 mA 70 265 VCE = -5V, IC = -200 mA 70 225 VCE = -5V, IC = -400 mA VI(ON) -2.45 -1.5 Vdc VO = -0.3V, IIC = -2 mA VO(on) (VOL) -0.1 -0.3 Vdc VCC = -5V, VB = -2.5V, Io/II = -50mA /-2.5mA VI = -5V Equivalent on-resistance* DC Current Gain Input On Voltage Output Voltage (equivalent to VCE(SAT)) Ii -18 -28 mA Base-Emitter Turn-on Voltage VBE(ON) -1.2 -1.3 V Base-Emitter Saturation Voltage VBE(SAT) -1.9 -2.2 Input Current V VCE = -5V, IC = -400mA IC = -50mA, IB = -5mA -5.25 -5.5 Input Resistor (Base), +/- 30% R2 0.154 0.22 0.286 KΩ Pull-up Resistor (Base to Vcc supply), +/- 30% R1 10 KΩ Resistor Ratio (Input Resistor/Pullup resistor) R1/R2 36 45 55 fT 200 MHz CC 20 pF IC = -400mA, IB = -20mA SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) Collector capacitance, (Ccbo-Output Capacitance) VCE = -10V, IE = -5mA, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz * Pulse Test: Pulse width, tp <300 us, Duty Cycle, d ≤0.02 DS30750 Rev. 4 - 2 3 of 10 www.diodes.com LMN400E01 NEW PRODUCT Electrical Characteristics: ESD Protected N Channel MOSFET (Q2) @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition V(BR)DSS 60 V VGS = 0V, ID = 10uA IDSS 1 µA VGS =0V, VDS = 60V Gate-Body Leakage Current, Forward IGSSF 10 µA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR -10 µA VGS = -20V, VDS = 0V Gate Source Threshold Voltage (Control Supply Voltage) VGS(th) 1 1.6 2.5 V VDS = VGS, ID = 0.25mA Static Drain-Source On-State Voltage VDS(on) 0.09 1.5 0.6 3.75 500 1.6 3 1.2 2 gFS 80 260 mS Input Capacitance Ciss 50 pF Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 5 pF Turn-On Delay Time td(on) 20 ns Turn-Off Delay Time td(off) 40 ns OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS Zero Gate Voltage Drain Current (Drain Leakage Current) ON CHARACTERISTICS (Note 4) On-State Drain Current Static Drain-Source On Resistance Forward Transconductance ID(on) RDS(on) V mA Ω VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VGS = 10V, VDS ≥2*VDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS ≥2*VDS(ON), ID = 200 mA DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V, f = 1MHz SWITCHING CHARACTERISTICS* VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current VSD 0.88 1.5 V IS 300 mA ISM 800 mA VGS = 0V, IS = 300 mA* * Pulse Test: Pulse width, tp <300 us, Duty Cycle, d ≤0.02 Notes: 4. Short duration test pulse used to minimize self-heating effect. DS30750 Rev. 4 - 2 4 of 10 www.diodes.com LMN400E01 250 500 lb = 7mA lb = 8mA TA = 25°C 200 IC, COLLECTOR CURRENT (mA) PD, POWER DISSIPATION (mW) 450 150 100 50 lb = 6mA lb = 5mA lb = 9mA 400 lb = 4mA lb = 10mA 350 lb = 3mA 300 lb = 2mA 250 200 lb = 1mA 150 100 50 0 0 25 75 50 100 150 125 0 175 0 TA, AMBIENT TEMPERATURE (°C) Fig. 3, Max Power Dissipation vs Ambient Temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 4, Output Current vs. Voltage Drop (Pass Element PNP) Pre-Biased PNP Transistor Characteristics 0.6 IC/IB = 10 VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) 0.3 0.2 TA = -55°C TA = 25°C TA = 125°C 0.1 TA = 85°C TA = 150°C IC/IB = 20 0.5 0.4 0.3 TA = 125°C TA = 25°C TA = 150°C 0.1 TA = 85°C 0 0.01 1 0.1 0.01 TA =-55°C 0.2 0 IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC @ IC/IB = 10 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 6 VCE(SAT) vs. IC @ IC/IB = 20 15 12 IC/IB = 10 VBE(ON), BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) NEW PRODUCT Typical Characteristics 10 8 6 4 TA = -55°C TA = 125°C TA = 150°C TA = 25°C 2 IC/IB = 10 VCE = 5V 12 9 6 TA = -55°C TA = 125°C 3 TA = 150°C TA = 85°C TA = 25°C TA = 85°C 0 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC @ IC/IB = 10 DS30750 Rev. 4 - 2 10 100 1000 10000 IC, COLLECTOR CURRENT (mA) Fig. 8 VBE(ON) vs. IC @ VCE = 5V 5 of 10 www.diodes.com LMN400E01 VCE = 5V hFE, DC CURRENT GAIN TA = 150°C TA = 125°C TA = 85°C 300 TA = 25°C 200 TA =-55°C 100 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 9 hFE vs. IC @ VCE = 5V Typical N-Channel MOSFET (ESD Protected) Characteristics 1.4 0.8 TA = 150°C VDS = 10V VGS = 10V 0.7 1.2 TA = 125°C TA = -55°C 1.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6V VGS = 5V VGS = 8V 0.8 VGS = 4V 0.6 0.4 0.6 TA = 25°C TA = 85°C 0.5 0.4 0.3 0.2 0.2 0.1 VGS = 3V 0 0 0 1 2 5 4 3 0 1 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Output Characteristics 2 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Transfer Characteristics 2 10 VDS = VGS VGS(th), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT 400 VGS = 10V Pulsed VDS = 10V ID = 1mA Pulsed TA = 125°C 1.5 TA = 85°C TA = 150°C 1 1 TA = -55°C TA = 25°C 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 12 Gate Threshold Voltage vs. Junction Temperature DS30750 Rev. 4 - 2 6 of 10 www.diodes.com 0.1 0.001 TA = 0°C TA = -25°C 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current 1 LMN400E01 7 10 NEW PRODUCT VGS = 5V Pulsed TA = 85°C TA = 125°C TA = 25°C Pulsed 6 ID = 300mA TA = 150°C 5 4 1 TA = -55°C TA = 25°C TA = 0°C 3 TA = -25°C 2 ID = 150mA 1 0 0.1 2 0 1 0.1 0.01 0.001 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 15 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current 1 2.5 VGS = 10V Pulsed VGS = 0V Pulsed 2 ID = 150mA 1.5 1 0.5 IDR, REVERSE DRAIN CURRENT (A) ID = 300mA TA = 125°C TA = 150°C 0.1 TA = 85°C TA = 25°C TA = 0°C 0.01 TA = -25°C TA = -55°C 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 0.5 0 Tj, JUNCTION TEMPERATURE (°C) Fig. 16 Static Drain-Source On-State Resistance vs. Junction Temperature VGS = 10V TA= 25°C Pulsed 0.1 0.01 VGS = 0V 0.001 0 0.5 1 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 18 Reverse Drain Current vs. Source-Drain Voltage DS30750 Rev. 4 - 2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 17 Reverse Drain Current vs. Source-Drain Voltage gFS, FORWARD TRANSCONDUCTANCE (mS) IS, REVERSE DRAIN CURRENT (A) 1 1 7 of 10 www.diodes.com 700 600 TA = -25°C 500 TA = -55°C TA = 25°C 400 300 TA = 150°C 200 TA = 125°C T = 85°C A 100 0 0 0.2 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Fig. 19 Forward Transconductance vs. Drain Current (VDS > ID *RDS(ON)) LMN400E01 NEW PRODUCT Application Details • PNP Transistor (DDTB122LU) and ESD Protected N-MOSFET (DMN601TK) integrated as one in LMN400E01 can be used as a discrete entity for general application or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig. 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 400 mA. The MOSFET Switch draws no current, hence loading of control circuitry is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 21 for one example of a typical application circuit used in conjunction with a voltage regulator as a part of power management system). DDTB122LU VIN E VOUT C PNP Q1 B R1 LOAD 10K R2 220 Q2 DMN601TK D S N-MOSFET G Control Fig 20 : Circuit Diagram Typical Application Circuit 5VSupply U1 U3 Load Switch Vin U2 Vin Control Logic Circuit (PIC, Comparator etc) GND OUT1 1 Control2 3 E_Q1 C_Q1 G_Q2 B_Q1 D_Q2 S_Q2 6 Vout Point of Load IN OUT 5 4 GND LMN400E01 Diodes Inc. Voltage Regulator Fig 21 DS30750 Rev. 4 - 2 8 of 10 www.diodes.com LMN400E01 Notes: (Note 4) Device Marking Code Packaging Shipping LMN400E01-7 PM5 SOT-363 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PM5 PM5 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 9 = September YM NEW PRODUCT Ordering Information Fig. 22 Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30750 Rev. 4 - 2 9 of 10 www.diodes.com LMN400E01 NEW PRODUCT Package Details SOT-363 A B C G H K M J D F L Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 α 0° 8° All Dimensions in mm Fig. 23 Suggested Pad Layout: (Based on IPC-SM-782) E Z E Figure 14 Dimensions SOT-363* Z 2.5 C G Y X G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 * Typical dimensions in mm Fig. 24 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30750 Rev. 4 - 2 10 of 10 www.diodes.com LMN400E01