LMN400E01 400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET Please click here to visit our online spice models database. NEW PRODUCT General Description LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA. It also contains an ESD protected discrete NMOSFET that can be used as control. The component can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 1 2 Features • • • • • • 3 Voltage Controlled Small Signal Switch N-MOSFET with ESD Gate Protection Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) Fig. 1: SOT-363 C_Q1 B_Q1 S_Q2 5 4 6 C Mechanical Data • • • • • • • • Q1 PNP Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 Marking Information: See Page 8 Ordering Information: See Page 8 Weight: 0.006 grams (approximate) DDTB122LU R2 B 220 E R1 10K S DMN601TK G Q2 NMOS D 1 2 E_Q1 G_Q2 3 D_Q2 Fig 2: Schematic and Pin Configuration Sub-Component P/N DDTB122LU_DIE DMN601TK_DIE (ESD Protected) Maximum Ratings, Total Device Reference Q1 Device Type PNP Transistor R1(NOM) 10K R2(NOM) 220 Figure 2 Q2 N-MOSFET ⎯ ⎯ 2 @TA = 25°C unless otherwise specified Characteristic Symbol Value PD 200 mW Power Derating Factor above 37.5°C Pder 1.6 mW/°C Output Current Iout 400 mA Symbol Value Unit Tj, TSTG -55 to +150 °C RθJA 625 °C/W Power Dissipation (Note 3) Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Equivalent to one heated junction of PNP transistor) Notes: Unit (Note 3) 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30750 Rev. 7 - 2 1 of 8 www.diodes.com LMN400E01 © Diodes Incorporated NEW PRODUCT Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current @TA = 25°C unless otherwise specified Symbol VCBO VCEO Vcc Vin IC Sub-Component Device: ESD Protected N-Channel MOSFET (Q2) Value -50 -50 -50 +5 to -6 -400 @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Drain Gate Voltage (RGS ≤ 1M Ohm) Gate-Source Voltage Symbol VDSS VDGR Continuous Pulsed (tp<50 uS) Drain Current (Page 1: Note 3) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%) Continuous Source Current Value 60 60 +/-20 +/-40 300 800 300 VGSS ID IS Electrical Characteristics: Pre-Biased PNP Transistor (Q1) Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) ON CHARACTERISTICS (Note 4) Unit V V V V mA mA Min Typ Max Unit Test Condition ICBO ICEO IEBO ⎯ ⎯ ⎯ -50 -50 ⎯ -4.9 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -0.55 ⎯ ⎯ -100 -500 -1 ⎯ ⎯ -0.3 ⎯ -500 nA nA mA V V V V nA VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -5V, IC = 0 IC = -10uA, IE = 0 IC = -2mA, IB = 0 VCE = -5V, IC = -100uA VCC = -5V, VB = -0.05V, RL = 1K VCC = -50V, VI = 0V ⎯ ⎯ ⎯ ⎯ ⎯ 220 225 -1.5 -0.1 -18 -1.2 -1.9 0.22 10 45 -0.15 -0.3 -0.5 -0.6 1.125 ⎯ ⎯ ⎯ -0.3 -28 -1.4 -2.2 0.286 13 55 V V V V Ω ⎯ ⎯ V V mA V V KΩ KΩ ⎯ IC = -10mA, IB = -0.3mA = -200mA, IB = -20mA IC = -400mA, IB= -40mA IC = -500mA, IB = -50mA IC = -400mA, IB = -40mA VCE = -5V, IC = -50mA VCE = -5V, IC = -400mA VO = -0.3V, IC = -20mA Io/II = -50mA /-2.5mA VI = -5V VCE = -5V, IC = -400mA IC = -50mA, IB = -5mA ⎯ ⎯ ⎯ V(BR)CBO V(BR)CEO VI(OFF) VOH IO(OFF) Input On Voltage Output Voltage (Equivalent to VCE(SAT)) Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage Input Resistor (Base), +/- 30% Pull-up Resistor (Base to Vcc supply), +/- 30% Resistor Ratio (Input Resistor/Pullup resistor) SMALL SIGNAL CHARACTERISTICS VI(ON) VO(ON) II VBE(ON) VBE(SAT) R2 R1 R1/R2 Transition Frequency (Gain Bandwidth Product) fT ⎯ 200 ⎯ MHz CC ⎯ 20 ⎯ pF VCE(SAT) Equivalent on-resistance RCE(SAT) Notes: mA Symbol Collector-Emitter Saturation Voltage Collector capacitance, (Ccbo-Output Capacitance) V @TA = 25°C unless otherwise specified ⎯ ⎯ ⎯ ⎯ ⎯ 70 70 -3 ⎯ ⎯ ⎯ ⎯ 0.154 7 36 DC Current Gain Unit V V hFE IC VCE = -10V, IE = -5mA, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz 4. Short duration pulse test used to minimize self-heating effect. DS30750 Rev. 7 - 2 2 of 8 www.diodes.com LMN400E01 © Diodes Incorporated Electrical Characteristics: ESD Protected N-Channel MOSFET (Q2) Characteristic @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition V(BR)DSS 60 ⎯ ⎯ V VGS = 0V, ID = 10uA IDSS ⎯ ⎯ 1 μA VGS = 0V, VDS = 60V Gate-Body Leakage Current, Forward IGSSF ⎯ ⎯ 10 μA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR ⎯ ⎯ -10 μA VGS = -20V, VDS = 0V V OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVdss ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) Static Drain-Source On-State Voltage VGS(th) VDS(on) On-State Drain Current ID(on) Static Drain-Source On Resistance RDS(on) Forward Transconductance gFS 1 1.6 2.5 ⎯ 0.09 1.5 ⎯ 0.6 3.75 500 ⎯ ⎯ ⎯ 1.6 3 ⎯ 1.2 2 80 260 ⎯ V mA Ω mS VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VGS = 10V, VDS ≥2*VDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS ≥2*VDS(ON), ID = 200 mA DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ ⎯ 50 pF Output Capacitance Coss ⎯ ⎯ 25 pF Reverse Transfer Capacitance Crss ⎯ ⎯ 5 pF Turn-On Delay Time td(on) ⎯ ⎯ 20 ns Turn-Off Delay Time td(off) ⎯ ⎯ 40 ns VDS = -25V, VGS = 0V, f = 1MHz SWITCHING CHARACTERISTICS (Note 4) VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current VSD ⎯ 0.88 1.5 V IS ⎯ ⎯ 300 mA ISM ⎯ ⎯ 800 mA VGS = 0V, IS = 300 mA* Typical Characteristics 250 500 lb = 8mA lb = 7mA T A = 25°C IC, COLLECTOR CURRENT (mA) 450 PD, POWER DISSIPATION (mW) NEW PRODUCT Zero Gate Voltage Drain Current (Drain Leakage Current) 200 150 100 50 lb = 9mA 400 lb = 6mA lb = 5mA lb = 4mA lb = 10mA 350 lb = 3mA 300 lb = 2mA 250 200 lb = 1mA 150 100 50 0 0 DS30750 Rev. 7 - 2 50 75 150 100 125 25 TA, AMBIENT TEMPERATURE (°C) Fig. 3 Max Power Dissipation vs. Ambient Temperature 175 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 4 Output Current vs. Voltage Drop (Pass Element PNP) 3 of 8 www.diodes.com LMN400E01 © Diodes Incorporated Pre-Biased PNP Transistor Characteristics TA = 125°C TA = 25°C TA = 85°C T A = 150°C VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) T A = -55 °C IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC @ IC/IB = 10 T A = 150°C TA = 25°C T A = 85°C VBE(ON), BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) TA = -55° C TA =-55 °C TA = 125°C TA = 25°C TA = 150°C TA = 85°C IC, COLLECTOR CURRENT (A) Fig. 6 VCE(SAT) vs. IC @ IC/IB = 20 IC/IB = 10 TA = 125°C IC/IB = 20 IC/IB = 10 VCE = 5V T A = 125°C TA = 150°C TA = -55° C T A = 25°C TA = 85°C IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC @ IC/IB = 10 IC, COLLECTOR CURRENT (mA) Fig. 8 VBE(ON) vs. IC @ VCE = 5V VCE = 5V hFE, DC CURRENT GAIN NEW PRODUCT IC/IB = 10 IC, COLLECTOR CURRENT (mA) Fig. 9 hFE vs. IC @ VCE = 5V DS30750 Rev. 7 - 2 4 of 8 www.diodes.com LMN400E01 © Diodes Incorporated Typical N-Channel MOSFET (ESD Protected) Characteristics TA = 150°C VDS = 10V T A = -55°C T A = 25°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 T A = 85°C 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE Fig. 11 Transfer Characteristics 10 2 VDS = VGS VGS = 10V Pulsed RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VDS = 10V ID = 1mA Pulsed 1.5 1 0.5 TA = 125° C TA = 85°C TA = 150 °C 1 TA = -55°C TA = 25°C TA = 0°C TA = -25°C 0.1 0 -50 -25 75 100 125 0 25 50 Tj, JUNCTION TEMPERATURE (°C) Fig. 12 Gate Threshold Voltage vs. Junction Temperature 150 ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current 10 T A = 125°C RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 5V Pulsed RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT TA = 125°C TA = 85° C TA = 150° C TA = -55°C TA = 25°C TA = 0°C TA = -25°C 0 1 ID, DRAIN CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current DS30750 Rev. 7 - 2 5 of 8 www.diodes.com VGS, GATE SOURCE VOLTAGE (V) Fig. 15 Static Drain-Source On-Resistance vs. Gate-Source Voltage LMN400E01 © Diodes Incorporated ID = 150mA IDR, REVERSE DRAIN CURRENT (A) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) ID = 300mA VGS = 0V Pulsed TA = 125°C T A = 150°C TA = 85°C TA = 25° C T A = 0°C TA = -25°C TA = -55° C 0 gFS, FORWARD TRANSCONDUCTANCE (mS) Tj, JUNCTION TEMPERATURE (°C) Fig. 16 Static Drain-Source On-State Resistance vs. Junction Temperature IS, REVERSE DRAIN CURRENT (A) NEW PRODUCT VGS = 10V Pulsed VGS = 10V TA= 25°C Pulsed VGS = 0V TA = -25° C TA = -55° C T A = 150°C TA = 25°C TA = 125° C TA = 85°C 1 DS30750 Rev. 7 - 2 6 of 8 www.diodes.com LMN400E01 © Diodes Incorporated NEW PRODUCT Application Details PNP Transistor (DDTB122LU) and ESD Protected N-MOSFET (DMN601TK) integrated as one in LMN400E01 can be used as a discrete entity for general application or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig. 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 400 mA. The MOSFET Switch draws no current, hence loading of control circuitry is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 21 for one example of a typical application circuit used in conjunction with a voltage regulator as a part of power management system). DDTB122LU VIN E VOUT C PNP Q1 B R1 LOAD 10K R2 220 Q2 DMN601TK D S N-MOSFET G Control Fig. 20 Circuit Diagram Typical Application Circuit 5VSupply U1 U3 Load Switch Vin U2 Vin Control Logic Circuit (PIC, Comparator etc) GND OUT1 1 Control 2 3 E_Q1 C_Q1 G_Q2 B_Q1 D_Q2 S_Q2 LMN400E01 Diodes Inc. 6 Vout Point of Load IN OUT 5 4 GND Voltage Regulator Fig. 21 DS30750 Rev. 7 - 2 7 of 8 www.diodes.com LMN400E01 © Diodes Incorporated Ordering Information 5. Device Packaging Shipping LMN400E01-7 SOT-363 3000/Tape & Reel For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PM5 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 9 = September YM NEW PRODUCT Notes: (Note 5) PM5 Fig. 22 Date Code Key Year Code 2006 T 2007 U 2008 V 2009 W 2010 X 2011 Y 2012 Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Mechanical Details A SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal F 0.30 0.40 H 1.80 2.20 J 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 8° 0° α All Dimensions in mm B C H K M J D L F Fig. 23 Suggested Pad Layout: E Z E Figure 24 Dimensions Z G X Y C E C G Value (mm) 2.5 1.3 0.42 0.6 1.9 0.65 Y X Fig. 24 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30750 Rev. 7 - 2 8 of 8 www.diodes.com LMN400E01 © Diodes Incorporated