LMN200B02 Lead-free Green 200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR NEW PRODUCT General Description • LMN200B02 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on the input voltage and can support continuous maximum current of 200 mA . It also contains a discrete N-MOSFET that can be used as control. This N-MOSFET also has a built-in pull down resistor at its gate. The component can be used as a part of a circuit or as a stand alone discrete device. 6 5 4 1 2 3 Features • • • • • • Fig. 1: SOT-363 Voltage Controlled Small Signal Switch N-MOSFET with Gate Pull-Down Resistor Surface Mount Package Ideally Suited for Automated Assembly Processes • • • • • • B_Q1 S_Q2 6 5 4 Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) C DDTB142JU_DIE Mechanical Data • • C_Q1 Q1 B PNP Case: SOT-363 R2 R3 470 37K E R1 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 S G 10K Q2 NMOS DSNM6047_DIE D Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 1 2 3 E_Q1 G_Q2 D_Q2 Marking & Type Code Information: See Last Page Fig. 2 Schematic and Pin Configuration Ordering Information: See Last Page Weight: 0.016 grams (approximate) Refere nce Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure DDTB142JU_DIE Q1 PNP Transistor 10K 470 2 DSNM6047_DIE (with Gate Pull-Down Resistor) Q2 N-MOSFET 37K 2 Sub-Component P/N Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Symbol Value Pd 200 mW Power Derating Factor above 125°C Pder 1.6 mW/°C Output Current Iout 200 mA Symbol Value Unit Tj,Tstg -55 to +150 °C RθJA 625 °C/W Power Dissipation (Note 3) Unit Thermal Characteristics Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Equivalent to One Heated Junction of PNP Transistor) Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30658 Rev. 4 - 2 1 of 10 www.diodes.com LMN200B02 Diodes Incorporated NEW PRODUCT Maximum Ratings: Sub-Component Device: Pre-Biased PNP Transistor (Q1) Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Supply Voltage Vcc -50 V Input Voltage Vin +5 to -6 V Output Current IC -200 mA Sub-Component Device: N-MOSFET With Gate Pull-Down Resistor (Q2) Characteristic @ TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain Gate Voltage (RGS ≤1MOhm) VDGR 60 V Gate-Source Voltage Continuous VGSS Pulsed (tp<50 uS) Drain Current (Page 1: Note 3) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%) Continuous Source Current DS30658 Rev. 4 - 2 ID IS 2 of 10 www.diodes.com +/-20 +/-40 115 800 115 V mA mA LMN200B02 NEW PRODUCT Electrical Characteristics: Pre-Biased PNP Transistor (Q1) Characteristic @ TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Collector-Base Cut Off Current ICBO -100 nA VCB = -50V, IE = 0 Collector-Emitter Cut Off Current ICEO -500 nA VCE = -50V, IB = 0 OFF CHARACTERISTICS IEBO -0.5 -1 mA VEB = -5V, IC = 0 Collector-Base Breakdown Voltage V(BR)CBO -50 V IC = -10 uA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 V IC = -2 mA, IB = 0 VI(OFF) -0.55 -0.3 V VCE = -5V, IC = -100uA VOH -4.9 V VCC = -5V, VB = -0.05V, RL = 1K IO(OFF) -500 nA VCC = -50V, VI = 0V -0.15 V IC = -10 mA, IB = -0.5 mA -0.2 V IC = -50mA, IB = -5mA -0.2 V IC = -20mA, IB = -1mA -0.25 V IC = -100mA, IB= -10mA -0.25 V IC = -200mA, IB= -10mA -0.3 V IC = -200mA, IB = -20mA Emitter-Base Cut Off Current Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) ON CHARACTERISTICS Collector-Emitter Saturation Voltage Equivalent on-resistance* DC Current Gain Input On Voltage Output Voltage (equivalent to VCE(SAT) or VO(ON) ) Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage VCE(SAT) 1.5 Ω IC = -200mA, IB = -10mA 60 150 VCE = -5V, IC = -20 mA 60 215 VCE = -5V, IC = -50 mA 60 245 VCE = -5V, IC = -100 mA 60 250 VCE = -5V, IC = -200 mA VI(ON) -2.45 -0.7 V VO = -0.3V, IC = -2 mA VOL -0.065 -0.15 V VCC = -5V, VB = -2.5V, Io/II = -50mA /-2.5mA Ii -9.2 -28 mA VBE(ON) -1.125 -1.3 V -3.2 -3.6 RCE(SAT) hFE VBE(SAT) V VI = -5V VCE = -5V, IC = 200mA IC = -50mA, IB = -5mA -4.55 -5.5 Input Resistor (Base), +/- 30% R2 0.47 KΩ Pull-up Resistor (Base to Vcc supply), +/- 30% R1 10 KΩ R1/R2 21 Transition Frequency (gain bandwidth product) fT 200 Collector capacitance, (Ccbo-Output Capacitance) CC 20 Resistor Ratio (Input Resistor/Pull-up resistor) +/- 20% IC = -80mA, IB = -8mA SMALL SIGNAL CHARACTERISTICS CE = -10V, IE = -5mA, MHz V f = 100MHz pF VCB = -10V, IE = 0A, f = 1MHz * Pulse Test: Pulse width, tp<300 µS, Duty Cycle, d<=0.02 DS30658 Rev. 4 - 2 3 of 10 www.diodes.com LMN200B02 Characteristic Symbol Min Typ Max Unit Test Condition V(BR)DSS 60 V VGS = 0V, ID = 10µA IDSS 1 µA VGS =0V, VDS = 60V Gate-Body Leakage Current, Forward IGSSF 0.95 mA VGS = 20V, VDS = 0V Gate-Body Leakage Current, Reverse IGSSR -0.95 mΑ VGS = -20V, VDS = 0V Gate Source Threshold Voltage (Control Supply Voltage) VGS(th) 1 1.86 2.2 V Static Drain-Source On-State Voltage VDS(on) 0.08 1.5 0.15 3.75 500 1.55 3 1.4 2 80 240 80 350 OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS Zero Gate Voltage Drain Current (Drain Leakage Current) ON CHARACTERISTICS (Note 4) ID(on) On-State Drain Current RDS(on) Static Drain-Source On Resistance V mA Ω VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 115mA VGS = 10V, VDS ≥2XVDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS ≥2XVDS(ON), ID = 115 mA Forward Transconductance gFS Gate Pull-Down Resistor, +/- 30% R3 37 ΚΩ Input Capacitance Ciss 50 pF Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 5 pF Turn-On Delay Time td(on) 20 ns Turn-Off Delay Time td(off) 40 ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm VGS = 0V, IS = 115 mA* mS VDS ≥2XVDS(ON), ID = 200 mA DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V, ƒ= 1MHz SWITCHING CHARACTERISTICS* SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current VSD 0.88 1.5 V IS 115 mA ISM 800 mA * Pulse Test: Pulse width, tp<300 µS, Duty Cycle, d<=0.02 Notes: 4. Short duration test pulse used to minimize self-heating effect. Typical Characteristics 350 300 PD, POWER DISSIPATION (mW) NEW PRODUCT Electrical Characteristics: N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25°C unless otherwise specified 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 3, Max Power Dissipation vs Ambient Temperature (Total Device) DS30658 Rev. 4 - 2 4 of 10 www.diodes.com LMN200B02 0.6 0.4 IC/IB = 20 VCE(SAT), COLLECTOR VOLTAGE (V) VCE(SAT), COLLECTOR VOLTAGE (V) IC/IB = 10 TA = 125°C 0.3 TA = 150°C 0.2 TA = -55°C 0.1 TA = 85°C TA = 25°C 0 0.5 0.4 0.3 TA = 125°C 0.2 TA =-55°C TA = 150°C TA = 25°C 0.1 TA = 85°C 0 0.01 1 0.1 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC IC, COLLECTOR CURRENT (A) Fig. 4 VCE(SAT) vs. IC 30 3 TA = 85°C IC/IB = 10 VBE(ON), BASE EMITTER VOLTAGE (V) VBE(SAT), BASE EMITTER VOLTAGE (V) TA = 25°C 25 TA = 150°C TA = 125°C 20 15 TA = -55°C 10 5 IC/IB = 10 VCE = 5V 2.5 2 TA = -55°C 1.5 TA = 25°C 1 0.5 TA = 150°C TA = 85°C TA = 125°C 0 0 1 10 100 1 1000 10 IC, COLLECTOR CURRENT (mA) Fig. 6 VBE(SAT) vs. IC 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(ON) vs. IC VCE = 5V TA = 150°C 400 hFE, DC CURRENT GAIN NEW PRODUCT Typical Pre-Biased PNP Transistor (Q1) Characteristics TA = 125°C 300 TA = 85°C TA = 25°C 200 100 TA = -55°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 8 hFE vs. IC DS30658 Rev. 4 - 2 5 of 10 www.diodes.com LMN200B02 Typical N-Channel MOSFET (Q2) Characteristics 1.4 1.8 VDS = 10V 1.2 VGS = 8V 1.4 VGS = 6V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TA =-55°C VGS = 10V 1.6 1.2 VGS = 5V 1.0 0.8 VGS = 4V 0.6 TA = 25°C TA = 125°C 1 TA = 85°C 0.8 0.6 TA = 150°C 0.4 0.4 0.2 0.2 VGS = 3V 0 0 1 0 2 4 3 5 6 0 7 5 4 3 2 1 VGS, GATE-SOURCE VOLTAGE (V) Fig. 10 Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Output Characteristics 2 1.8 1.6 1.4 1.2 0 -75 -50 -25 0 25 50 75 VGS=5V Pulsed 5 VDS = 10V VDS = VGS ID = 0.25mA Pulsed RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W) VGS(th), GATE THRESHOLD VOLTAGE (V) 2.2 4 TA = 125°C TA = 150°C 3 TA = 85°C 2 TA = 25°C TA = -55°C 1 0 100 125 150 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 12 Static Drain-Source On-Resistance vs. Drain Current 0.001 TJ, JUNCTION TEMPERATURE (°C) Fig. 11 Gate Threshold Voltage vs. Junction Temperature 1 7 4 RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W) VGS = 10V Pulsed RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (W) NEW PRODUCT TA = 25°C 3 TA = 125°C 2 TA = 150°C TA = 85°C TA = 25°C TA = -55°C 1 TA = 25°C Pulsed 6 5 4 ID = 115mA 3 2 ID = 50mA 1 0 0 0.01 0.001 1 0.1 ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current DS30658 Rev. 4 - 2 6 of 10 www.diodes.com 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 14 Static Drain-Source On-Resistance vs. Gate-Source Voltage LMN200B02 1 VGS = 10V Pulsed ID = 115mA 2 ID = 50mA 1.5 1 IS, REVERSE DRAIN CURRENT (A) NEW PRODUCT 2.5 TA = 125°C TA = 25°C 0.1 TA = 150°C TA = 85°C TA = -55°C 0.01 VGS = 5V Pulsed 0.001 0.5 -75 -50 -25 0 25 50 75 100 125 150 gFS, FORWARD TRANSCONDUCTANCE (mS) IS, REVERSE DRAIN CURRENT (A) VGS = 10V VGS = 5V TA= 25°C Pulsed 0.1 0.01 0.001 0 0.5 1 1.5 2 2.5 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 17 Reverse Drain Current vs. Body Diode Forward Voltage DS30658 Rev. 4 - 2 3 5 4 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 16 Reverse Drain Current vs. Source-Drain Voltage Tj, JUNCTION TEMPERATURE (°C) Fig. 15 Static Drain-Source On-State Resistance vs. Junction Temperature 1 2 1 0 7 of 10 www.diodes.com 900 800 TA = -55°C TA = 25°C 700 600 TA = 85°C 500 400 TA = 125°C TA = 150°C 300 200 100 0 0 0.2 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Fig. 18 Forward Transfer Conductance vs. Drain Current (VDS > ID *RDS(ON)) LMN200B02 Diodes Incorporated NEW PRODUCT Application Details: • PNP Transistor (DDTB142JU) and N-MOSFET (DSNM6047) with gate pull-down resistor integrated as one in LMN200B02 can be used as a discrete entity for general purpose applications or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig 19, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 200 mA. The MOSFET Switch draws no current, hence loading of control circuit is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 20 for one example of a typical application circuit used in conjunction with voltage regulator as a part of a power management system) DDTB142JU Vin E Vout C Q1 PNP B R1 10K LOAD R2 470 DSNM6047 D S NMOS Q2 G Control R3 37K Fig. 19 Circuit Diagram Typical Application Circuit 5v Supply U1 U2 Load Switch Vin U3 Control Logic Circuit (PIC, Comparator etc) GND Vin OUT1 1 Control 2 3 E_Q1 C_Q1 G_Q2 B_Q1 D_Q2 S_Q2 LNM200B02 6 Vout Point of Load IN OUT 5 4 Gnd Voltage Regulator Diodes Inc. Fig. 20 DS30658 Rev. 4 - 2 8 of 10 www.diodes.com LMN200B02 Note: (Note 5) Device Marking Code Packaging Shipping LMN200B02-7 PM2 SOT-363 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information PM2 YM NEW PRODUCT Ordering Information PM2 = Product Type Marking Code, YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Fig. 21 Date Code Key Year 2006 2007 2008 2009 Code T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30658 Rev. 4 - 2 9 of 10 www.diodes.com LMN200B02 NEW PRODUCT Mechanical Details SOT-363 A B C Dim Min Max A 0.1 0.3 B 1.15 1.35 C 2 2.2 D H K M J F D L Fig. 22 0.65 Nominal F 0.3 0.4 H 1.8 2.2 J - 0.1 K 0.9 1 L 0.25 0.4 M 0.1 0.25 α 0° 8° All Dimensions in mm Suggested Pad Layout: (Based on IPC-SM-782) E Z E C G Y X Figure 23 Dimensions SOT-363* Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65 * Typical dimensions in mm Fig. 23 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30658 Rev. 4 - 2 10 of 10 www.diodes.com LMN200B02