FAIRCHILD FOD3180SDV

FOD3180
2A Output Current, High Speed MOSFET Gate Driver
Optocoupler
Features
Description
■ Guaranteed operating temperature range of -40°C to
The FOD3180 is a 2A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETs used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
■
■
■
■
■
■
■
■
■
■
■
■
+100°C
2A minimum peak output current
High speed response: 200ns max propagation delay
over temperature range
250kHz maximum switching speed
30ns typ pulse width distortion
Wide VCC operating range: 10V to 20V
5000Vrms, 1 minute isolation
Under voltage lockout protection (UVLO) with
hysteresis
Minimum creepage distance of 7.0mm
Minimum clearance distance of 7.0mm
C-UL, UL and VDE* safety agency approvals pending
RDS(ON) of 1.5Ω (typ.) offers lower power dissipation
10kV/µs minimum common mode rejection
tm
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
Applications
■ Plasma Display Panel
■ High performance DC/DC convertor
■ High performance switch mode power supply
■ High performance uninterruptible power supply
■ Isolated Power MOSFET gate drive
*Requires ‘V’ ordering option
Functional Block Diagram
FOD3180
NO CONNECTION 1
8 VCC
8
ANODE 2
7 OUTPUT
CATHODE 3
6 OUTPUT
NO CONNECTION 4
1
5 VEE
8
8
1
Note:
A 0.1µF bypass capacitor must be connected
between pins 5 and 8.
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.3
1
1
www.fairchildsemi.com
FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
January 2007
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
-40 to +125
°C
TOPR
Operating Temperature
-40 to +100
°C
Junction Temperature
-40 to +125
°C
TJ
TSOL
Lead Solder Temperature
260 for 10 sec.
°C
IF(AVG)
Average Input Current(1)
25
mA
IF(tr, tf)
LED Current Minimum Rate of Rise/Fall
250
ns
IF(TRAN)
Peak Transient Input Current (<1µs pulse width, 300pps)
1.0
A
5
V
VR
Reverse Input Voltage
IOH(PEAK)
“High” Peak Output Current(2)
2.5
A
IOL(PEAK)
“Low” Peak Output Current(2)
2.5
A
VCC – VEE
Supply Voltage
-0.5 to 25
V
VO(PEAK)
Output Voltage
0 to VCC
V
PO
Output Power Dissipation(4)
250
mW
PD
Total Power Dissipation(5)
295
mW
Value
Units
Power Supply
10 to 20
V
IF(ON)
Input Current (ON)
10 to 16
mA
VF(OFF)
Input Voltage (OFF)
-3.0 to 0.8
V
Recommended Operating Conditions
Symbol
VCC – VEE
Parameter
2
FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings (TA = 25°C Unless otherwise specified)
Over recommended operating conditions unless otherwise specified.
Symbol
IOH
IOL
Parameter
High Level Output Current(2)(3)
Low Level Output Current(2)(3)
Test Conditions
Min.
VOH = (VCC – VEE – 1V)
0.5
VOH = (VCC – VEE – 3V)
2.0
VOL = (VCC – VEE – 1V)
0.5
VOL = (VCC – VEE – 3V)
2.0
Typ.*
Max.
Unit
A
A
VOH
High Level Output Voltage(6)(7)
IO = -100mA
VOL
Low Level Output Voltage(6)(7)
IO = 100mA
ICCH
High Level Supply Current
Output Open,
IF = 10 to 16mA
ICCL
Low Level Supply Current
Output Open,
VF = -3.0 to 0.8V
IFLH
Threshold Input Current Low to
High
IO = 0mA, VO > 5V
VFHL
Threshold Input Voltage High to Low IO = 0mA, VO < 5V
0.8
Input Forward Voltage
IF = 10mA
1.2
∆VF / TA
Temperature Coefficient of Forward
Voltage
IF = 10mA
-1.5
mV/°C
VUVLO+
UVLO Threshold
VO > 5V, IF = 10mA
8.3
V
VO < 5V, IF = 10mA
7.7
V
0.6
V
VF
VUVLO–
VCC – 0.5
UVLOHYST UVLO Hysteresis
BVR
Input Reverse Breakdown Voltage
IR = 10µA
CIN
Input Capacitance
f = 1MHz, VF = 0V
V
VEE + 0.5
V
4.8
6.0
mA
5.0
6.0
mA
8.0
mA
V
1.43
5
1.8
V
V
60
pF
*Typical values at TA = 25°C
3
FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Over recommended operating conditions unless otherwise specified.
Symbol
Parameter
Test Conditions Min.
tPLH
Propagation Delay Time to High Output Level(8)
tPHL
Propagation Delay Time to Low Output Level(8)
PWD
Pulse Width Distortion(9)
IF = 10mA,
Rg = 10Ω,
f = 250kHz,
Duty Cycle = 50%,
Cg = 10nF
Propagation Delay Difference Between Any
PDD
(tPHL – tPLH) Two Parts(10)
tr
Rise Time
tf
Fall Time
Typ.* Max.
Unit
50
135
200
ns
50
105
200
ns
65
ns
90
ns
-90
CL = 10nF,
Rg = 10Ω
75
ns
55
ns
tUVLO ON
UVLO Turn On Delay
2.0
µs
tUVLO OFF
UVLO Turn Off Delay
0.3
µs
| CMH |
Output High Level Common Mode Transient
Immunity(11) (12)
TA = +25°C,
If = 10 to 16mA,
VCM = 1.5kV,
VCC = 20V
10
kV/µs
| CML |
Output Low Level Common Mode Transient
Immunity(11) (13)
TA = +25°C,
Vf = 0V,
VCM = 1.5kV,
VCC = 20V
10
kV/µs
*Typical values at TA = 25°C
Isolation Characteristics
Symbol Parameter
Test Conditions
VISO
Withstand Isolation Voltage(14) (15) TA = 25°C,
R.H. < 50%, t = 1min.,
II-O ≤ 20µA
RI-O
Resistance (input to output)(15)
VI-O = 500V
CI-O
Capacitance (input to output)
Freq. = 1MHz
Min.
Typ.*
5000
Max.
Unit
Vrms
1011
Ω
1
pF
*Typical values at TA = 25°C
4
FOD3180 Rev. 1.0.3
www.fairchildsemi.com
FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Switching Characteristics
VOH = (VCC – VEE) – (IOH x RDS(ON)).
This guarantees operation at IO peak minimum = 2.0A for -40°C to +100°C operating temperature range.
3.
The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 8.5Ω,
frequency = 8kHz, 50% DF. The maximum pulse width of the output current is 1.5µs, maximum duty cycle = 2.4%.
Output currents specified for different values of VDS for VCC – VEE = 20V with the formula:
VOL = (VCC – VEE) – (IOL x RDS(ON)).
This guarantees operation at IO peak minimum = 0.5A for -40°C to +100°C operating temperature range.
4.
5.
6.
7.
8.
9.
Derate linearly above +87°C, free air temperature at the rate of 0.77mW/°C. Refer to Figure 12.
No derating required across operating temperature range.
In this test, VOH is measured with a dc load current. When driving capacitive load VOH will approach VCC as IOH
approaches zero amps.
Maximum pulse width = 1ms, maximum duty cycle = 20%.
tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input
pulse to the 50% level of the rising edge of the VO signal.
PWD is defined as | tPHL – tPLH | for any given device.
10. The difference between tPHL and tPLH between any two FOD3180 parts under same test conditions.
11. Pin 1 and 4 need to be connected to LED common.
12. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse
VCM to assure that the output will remain in the high state (i.e. VO > 10.0V).
13. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse,
VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V).
14. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms for
1 second (leakage detection current limit II-O < 5µA).
15. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted
together.
5
FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Notes:
1. Derate linearly above +70°C free air temperature at a rate of 0.3mA/°C.
2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 0.5Ω,
frequency = 8kHz, 50% DF. The maximum pulse width of the output current is 300ns, maximum duty cycle = 0.48%.
Output currents specified for different values of VDS for VCC – VEE = 20V with the formula:
Fig. 2 Low To High Input Current Threshold
vs. Ambient Temperature
Fig. 1 Input Forward Current vs. Forward Voltage
I FLH – Low To High Input Current Threshold (mA)
100
I F – Forward Current (mA)
10
TA = -40oC
TA = 100oC
1
TA = 25oC
0.1
0.01
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
6
V
CC
= 10 to 20V
VEE = 0
5
Output = Open
4
3
2
1
0
-40
2.2
-20
0
VF – Forward Voltage (V)
Fig. 3 Output Low Voltage vs. Ambient Temperature
60
80
100
0.00
(VOH - VCC) – High Output Voltage Drop (V)
VF(OFF) = -3.0 to 0.8V
IOUT = 100mA
V = 10 to 20V
0.25
V OL – Output Low Voltage (V)
40
Fig. 4 High Output Voltage Drop vs. Ambient Temperature
0.30
CC
VEE = 0
0.20
0.15
0.10
0.05
0.00
V
CC
= 10 to 20V, VEE = 0
IF = 10 to 16 mA
IOUT = -100 mA
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
o
TA – Ambient Temperature (°C)
TA – Ambient Temperature ( C)
Fig. 5 Supply Current vs. Ambient Temperature
Fig. 6 Supply Current vs. Supply Voltage
6.2
6.2
V
CC
= 20V, VEE = 0
IF = 10 mA (for ICCH)
IF = 0 mA (for ICCL)
IF = 10mA (for ICCH)
IF = 0mA (for ICCL)
5.8
I CC – Supply Current (mA)
5.8
I CC – Supply Current (mA)
20
TA – Ambient Temperature (°C)
5.4
ICCL
5.0
ICCH
4.6
4.2
TA = 25oC, VEE = 0V
5.4
5.0
ICCL
4.6
ICCH
4.2
3.8
3.8
-40
-20
0
20
40
60
80
100
10
TA – Ambient Temperature (°C)
14
16
18
20
VCC – Supply Voltage (V)
6
FOD3180 Rev. 1.0.3
12
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves
200
200
VCC = 20V, VEE = 0
VCC = 20V, VEE = 0
o
IF = 10mA, TA = 25 C
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
t P – Propagation Delay (ns)
t P – Propagation Delay (ns)
180
160
tPHL
140
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
TA = 25oC
180
120
tPLH
100
80
160
tPHL
140
120
tPLH
100
80
60
60
5
10
15
20
25
6
8
CG – Load Capacitance (nF)
12
14
16
Fig. 10 Propagation Delay vs. Ambient Temperature
Fig. 9 Propagation Delay vs. Series Load Resistance
200
200
VCC = 20V, VEE = 0
VCC = 20V, VEE = 0
IF = 10mA, TA = 25oC
CG = 10nF
f = 250 kHz, D. Cycle = 50%
160
140
tPHL
120
tPLH
100
IF = 10 mA
180
t P – Propagation Delay (ns)
180
t P – Propagation Delay (ns)
10
IF – Forward LED Current (mA)
80
RG = 10Ω, CG = 10nF
f = 250kHz, D. Cycle = 50%
160
tPHL
140
120
tPLH
100
80
60
60
10
20
30
40
50
-40
RG – Series Load Resistance (Ω)
-20
0
20
40
60
80
100
TA – Ambient Temperature (°C)
Fig. 11 Propagation Delay vs. Supply Voltage
180
IF = 10mA, TA = 25oC
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
t P – Propagation Delay (ns)
160
140
tPHL
120
tPLH
100
80
60
10
15
20
25
VCC – Supply Voltage (V)
7
FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Fig. 8 Propagation Delay vs. Forward LED Current
Fig. 7 Propagation Delay vs. Load Capacitance
Through Hole
0.4" Lead Spacing
PIN 1
ID.
4
3
2
PIN 1
ID.
1
4
3
2
1
0.270 (6.86)
0.250 (6.35)
5
6
7
0.270 (6.86)
0.250 (6.35)
8
5
0.070 (1.78)
0.045 (1.14)
0.020 (0.51) MIN
0.200 (5.08)
0.140 (3.55)
0.154 (3.90)
0.120 (3.05)
0.022 (0.56)
0.016 (0.41)
6
7
8
0.390 (9.91)
0.370 (9.40)
SEATING PLANE
SEATING PLANE
0.390 (9.91)
0.370 (9.40)
0.016 (0.40)
0.008 (0.20)
0.100 (2.54) TYP
0.070 (1.78)
0.045 (1.14)
0.004 (0.10) MIN
0.200 (5.08)
0.140 (3.55)
15° MAX
0.154 (3.90)
0.120 (3.05)
0.300 (7.62)
TYP
0.022 (0.56)
0.016 (0.41)
0.016 (0.40)
0.008 (0.20)
0.100 (2.54) TYP
Surface Mount
8-Pin DIP – Land Pattern
0.390 (9.91)
0.370 (9.40)
4
3
2
0° to 15°
0.400 (10.16)
TYP
0.070 (1.78)
1
PIN 1
ID.
0.060 (1.52)
0.270 (6.86)
0.250 (6.35)
5
6
7
0.100 (2.54)
8
0.295 (7.49)
0.070 (1.78)
0.045 (1.14)
0.020 (0.51)
MIN
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
0.415 (10.54)
0.300 (7.62)
TYP
0.030 (0.76)
0.016 (0.41)
0.008 (0.20)
0.045 [1.14]
0.315 (8.00)
MIN
0.405 (10.30)
MIN
Note:
All dimensions are in inches (millimeters)
8
FOD3180 Rev. 1.0.3
www.fairchildsemi.com
FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Package Dimensions
FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Ordering Information
Example: FOD3180
X
X
Packaging Option
S:
Surface Mount Lead Bend
SD: Surface Mount, Tape and Reel
T:
0.4" Lead Spacing
V:
VDE Approved
TV: VDE Approved, 0.4" Lead Spacing
SV: VDE Approved, Surface Mount
SDV: VDE Approved, Surface Mount, Tape and Reel
Marking Information
1
3180
XX YY B
V
3
4
2
6
5
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
Two digit year code, e.g., ‘03’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
9
FOD3180 Rev. 1.0.3
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P0
P2
t
K0
E
F
A0
W1
P
User Direction of Feed
Symbol
t
Description
D1
Dimension in mm
Tape Width
16.0 ± 0.3
Tape Thickness
0.30 ± 0.05
P0
Sprocket Hole Pitch
D0
Sprocket Hole Diameter
1.55 ± 0.05
4.0 ± 0.1
E
Sprocket Hole Location
1.75 ± 0.10
F
Pocket Location
7.5 ± 0.1
P
Pocket Pitch
12.0 ± 0.1
A0
Pocket Dimensions
4.0 ± 0.1
P2
10.30 ±0.20
10.30 ±0.20
B0
4.90 ±0.20
K0
W1
d
R
Cover Tape Width
1.6 ± 0.1
Cover Tape Thickness
0.1 max
Max. Component Rotation or Tilt
10°
Min. Bending Radius
30
10
FOD3180 Rev. 1.0.3
W
B0
d
W
D0
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Carrier Tape Specifications
245 C, 10–30 s
Temperature (°C)
300
260 C peak
250
200
150
Time above 183C, <160 sec
100
50
Ramp up = 2–10C/sec
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
• Peak reflow temperature: 260 C (package surface temperature)
• Time of temperature higher than 183 C for 160 seconds or less
• One time soldering reflow is recommended
Output Power Derating
The output power is the product of the average output current
squared times the output transistor’s RDS(ON):
The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating
conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125°C. The
package power is composed of three elements; the LED, static
operating power of the output IC, and the power dissipated in
the output power MOSFET transistors. The power rating of the
output IC is 250mW. This power is divided between the static
power of the integrated circuit, which is the product of IDD times
the power supply voltage (VDD – VEE). The maximum IC static
output power is 150mW, (VDD – VEE) = 25V, IDD = 6mA. This
maximum condition is valid over the operational temperature
range of -40°C to +100°C. Under these maximum operating
conditions, the output of the power MOSFET is allowed to dissipate 100mW of power.
PO(AVG) = IO(AVG)2 • RDS(ON)
The IO(AVG) is the product of the duty factor times the peak
current flowing in the output. The duty factor is the ratio of the
‘on’ time of the output load current divided by the period of the
operating frequency. An RDS(ON) of 2.0Ω results in an average
output load current of 200mA. The load duty factor is a ratio of
the average output time of the power MOSFET load circuit and
period of the driving frequency.
The maximum permissible, operating frequency is determined
by the load supplied to the output at its resulting output pulse
width. Figure 13 shows an example of a 0.03µF gate to source
capacitance with a series resistance of 8.50Ω. This reactive
load results in a composite average pulse width of 1.5µs. Under
this load condition it is not necessary to derate the absolute
maximum output current until the frequency of operation
exceeds 63kHz.
The absolute maximum output power dissipation versus ambient temperature is shown in Figure 12. The output driver is
capable of supplying 100mW of output power over the temperature range from -40°C to 87°C. The output derates to 90mW at
the absolute maximum operating temperature of 100°C.
Fig. 13 Output Current Derating vs. Frequency
2.5
Fig. 12 Absolute Maximum Power Dissipation
vs. Ambient Temperature
0.15
IO – Peak Output Current (A)
Power Dissipation (W)
VDD – VEE = Max. = 25V
IDD = 6mA
LED Power = 45mW
0.1
0.05
2
1.5
TA = -40°C to 100°C
Load = .03µF +8.5Ω
VDD = 20V
IF = 12mA
LED Duty Factor = 50%
1
Output Pulse Width = 1.5µs
0.5
0
1
0
-40
10
100
F – Frequency (kHz)
-20
0
20
40
60
80
100
TA – Ambient Temperature (°C)
11
FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Reflow Profile
This device is tested and specified when driving a complex
reactive load. The load consists of a capacitor in the series with
a current limiting resistor. The capacitor represents the gate to
source capacitance of a power MOSFET transistor. The test
load is a 0.03uF capacitor in series with an 8.5Ω resistor. The
LED test frequency is 10.0kHz with a 50% duty cycle. The combined IOH and IOL output load current duty factor is 0.6% at the
test frequency.
Figure 14 illustrates the relationship of the LED input drive
current and the device’s output voltage and sourcing and sinking currents. The 0.03µF capacitor load represents the gate to
source capacitance of a very large power MOSFET transistor.
A single supply voltage of 20V is used in the evaluation.
Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the device. The IOH
and IOL are measured at the peak of their respective current
pulses.
IF = 8mA
LED
OFF
ON
20V
N-Channel (ON)
P-Channel (ON)
OUTPUT
0
IOH = 2.2A
Load
Current
IOL = 2.2A
1µs/Div
Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive
Pulse
Generator
FOD3180
8
1
0.1µF
2
7
IOMON
VO
0.33µF
IFMON
100Ω
3
6
4
5
8.5Ω
22µF
100Ω
Figure 15. Test Schematic
12
FOD3180 Rev. 1.0.3
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FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
IOH and IOL Test Conditions
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SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22