FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Features Description ■ Guaranteed operating temperature range of -20°C to The FOD3181 is a 0.5A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to a CMOS integrated circuit with a power stage. The power stage consists of a PMOS pullup and a NMOS pull-down power transistor. It is ideally suited for high frequency driving of MOSFETs used in Plasma Display Panels (PDPs), motor control invertor applications, and high performance DC/DC converters. ■ ■ ■ ■ ■ ■ ■ ■ ■ +85°C 0.5A minimum peak output current High speed response: 500ns max propagation delay over temperature range Wide VCC operating range: 10V to 20V 5000Vrms, 1 minute isolation Minimum creepage distance of 7.0mm Minimum clearance distance of 7.0mm C-UL, UL and VDE* approved 10kV/µs minimum common mode rejection (CMR) at VCM = 1,500V RDS(ON) of 1.5Ω (typ.) offers lower power dissipation tm The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance. Applications ■ Plasma Display Panel ■ High performance DC/DC convertor ■ High performance switch mode power supply ■ High performance uninterruptible power supply ■ Isolated Power MOSFET gate drive *Requires ‘V’ ordering option Functional Block Diagram FOD3181 NO CONNECTION 1 8 VCC ANODE 2 7 OUTPUT CATHODE 3 6 OUTPUT NO CONNECTION 4 8 1 5 VEE 8 Note: A 0.1µF bypass capacitor must be connected between pins 5 and 8. ©2006 Fairchild Semiconductor Corporation FOD3181 Rev. 1.0.3 8 1 1 1 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler January 2007 Symbol Parameter Value Units TSTG Storage Temperature -40 to +125 °C TOPR Operating Temperature -20 to +85 °C Junction Temperature -20 to +125 °C TJ TSOL Lead Solder Temperature 260 for 10 sec. °C IF(AVG) Average Input Current(1) 25 mA Minimum Rate of Rise of LED Current 250 ns Peak Transient Input Current (<1µs pulse width, 300pps) 1.0 A IF(tr) IF(TRAN) VR Reverse Input Voltage 5 V IOH(PEAK) “High” Peak Output Current(2) 1.5 A IOL(PEAK) “Low” Peak Output Current(2) 1.5 A VCC – VEE Supply Voltage -0.5 to 25 V VO(PEAK) Output Voltage 0 to VCC V 250 mW 300 mW Dissipation(4) PO Output Power PD Total Power Dissipation(4) Recommended Operating Conditions Symbol VCC – VEE Parameter Value Units Power Supply 10 to 20 V IF(ON) Input Current (ON) 12 to 18 mA VF(OFF) Input Voltage (OFF) 0 to 0.8 V -20 to +85 °C TOPR Operating Temperature 2 FOD3181 Rev. 1.0.3 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Absolute Maximum Ratings Symbol Test Conditions Min. IOH High Level Output Current(2)(3) VOH = (VCC – VEE – 1V) 0.5 A IOL Low Level Output Current(2)(3) VOL = (VCC – VEE – 1V) 0.5 A VOH High Level Output Voltage(5)(6) IO = -100mA VCC – 0.5 V VOL Low Level Output Voltage(5)(6) IO = 100mA ICCH High Level Supply Current Output Open IF = 7 to 10mA ICCL Low Level Supply Current Output Open VF = 0 to 0.8V IFLH Threshold Input Current Low to High IO = 0mA, VO > 5V VFHL Threshold Input Voltage High to Low IO = 0mA, VO < 0.5V 0.8 Input Forward Voltage IF = 10mA 1.2 Temperature Coefficient of Forward Voltage IF = 10mA BVR Input Reverse Breakdown Voltage IR = 10µA CIN Input Capacitance f = 1MHz, VF = 0V VF ∆VF / TA Parameter Typ.* Max. Unit VEE + 0.5 V 4.8 6.0 mA 5.0 6.0 mA 10 mA V 1.5 1.8 V -1.5 mV/°C 5 V 60 pF * All typical values at TA = 25°C Switching Characteristics (TA = -20°C to +70°C) Over recommended operating conditions unless otherwise specified. Symbol Parameter Test Conditions Min. Typ.* Max. Unit tPLH Propagation Delay Time to High IF = 10mA, Rg = 10Ω, f = 250kHz, Duty Cycle = 50%, Cg = 10nF Output Level(7) 50 135 500 ns tPHL Propagation Delay Time to Low Output Level(7) 50 105 500 ns tr Rise Time tf Fall Time CL = 10nF, Rg = 10Ω 75 ns 55 ns | CMH | Output High Level Common Mode Transient Immunity(8)(9) TA = +25°C, If = 7 to 10mA, VCM = 1.5kV, VCC = 20V 10 kV/µs | CML | Output Low Level Common Mode Transient Immunity(8)(10) TA = +25°C, Vf = 0V, VCM = 1.5kV, VCC = 20V 10 kV/µs * All typical values at TA = 25°C Isolation Characteristics (TA = -20°C to +70°C) Symbol Parameter Test Conditions VISO Withstand Isolation Voltage(11)(12) TA = 25°C, R.H. < 50%, t = 1min., II-O ≤ 20 µA RI-O Resistance (input to output)(12) VI-O = 500V CI-O Capacitance (input to output) Freq. = 1MHz Min. Typ.* 5000 Max. Unit Vrms 1011 Ω 1 pF * All typical values at TA = 25°C 3 FOD3181 Rev. 1.0.3 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Electrical-Optical Characteristics (DC) (TA = -20°C to +70°C) Over recommended operating conditions unless otherwise specified. VOH = (VCC – VEE) – (IOH x RDS(ON)). This guarantees operation at IO peak minimum = 2.0A for -40°C to +100°C operating temperature range. 3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 40Ω, frequency = 8kHz, 50% DF. The maximum pulse width of the output current is 1.5µs, maximum duty cycle = 2.4%. Output currents specified for different values of VDS for VCC – VEE = 20V with the formula: VOL = (VCC – VEE) – (IOL x RDS(ON)). This guarantees operation at IO peak minimum = 0.5A for -40°C to +100°C operating temperature range. 4. 5. 6. 7. 8. 9. No derating required across operating temperature range. In this test, VOH is measured with a dc load current. When driving capacitive load VOH will approach VCC as IOH approaches zero amps. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. Pin 1 and 4 need to be connected to LED common. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse VCM to assure that the output will remain in the high state (i.e. VO > 10.0V). 10. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V). 11. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms for 1 second (leakage detection current limit II-O < 5µA). 12. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together. 4 FOD3181 Rev. 1.0.3 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Notes: 1. Derate linearly above +70°C free air temperature at a rate of 0.3mA/°C. 2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 0.5Ω, frequency = 8kHz, 50% DF. The maximum pulse width of the output current is 300ns, maximum duty cycle = 0.48%. Output currents specified for different values of VDS for VCC – VEE = 20V with the formula: Fig. 2 Low To High Input Current Threshold vs. Ambient Temperature Fig. 1 Input Forward Current vs. Forward Voltage I FLH – Low To High Input Current Threshold (mA) 100 I F – Forward Current (mA) 10 TA = -40oC TA = 100oC 1 TA = 25oC 0.1 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 6 V CC = 10 to 20V VEE = 0 5 Output = Open 4 3 2 1 0 -40 2.2 -20 0 VF – Forward Voltage (V) Fig. 3 Output Low Voltage vs. Ambient Temperature 60 80 100 0.00 (VOH - VCC) – High Output Voltage Drop (V) VF(OFF) = -3.0 to 0.8V IOUT = 100mA V = 10 to 20V 0.25 V OL – Output Low Voltage (V) 40 Fig. 4 High Output Voltage Drop vs. Ambient Temperature 0.30 CC VEE = 0 0.20 0.15 0.10 0.05 0.00 V CC = 10 to 20V, VEE = 0 IF = 10 to 16 mA IOUT = -100 mA -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 o TA – Ambient Temperature (°C) TA – Ambient Temperature ( C) Fig. 5 Supply Current vs. Ambient Temperature Fig. 6 Supply Current vs. Supply Voltage 6.2 6.2 V CC = 20V, VEE = 0 IF = 10 mA (for ICCH) IF = 0 mA (for ICCL) IF = 10mA (for ICCH) IF = 0mA (for ICCL) 5.8 I CC – Supply Current (mA) 5.8 I CC – Supply Current (mA) 20 TA – Ambient Temperature (°C) 5.4 ICCL 5.0 ICCH 4.6 4.2 TA = 25oC, VEE = 0V 5.4 5.0 ICCL 4.6 ICCH 4.2 3.8 3.8 -40 -20 0 20 40 60 80 100 10 TA – Ambient Temperature (°C) 14 16 18 20 VCC – Supply Voltage (V) 5 FOD3181 Rev. 1.0.3 12 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves 200 200 VCC = 20V, VEE = 0 VCC = 20V, VEE = 0 o IF = 10mA, TA = 25 C RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% t P – Propagation Delay (ns) t P – Propagation Delay (ns) 180 160 tPHL 140 RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% TA = 25oC 180 120 tPLH 100 80 160 tPHL 140 120 tPLH 100 80 60 60 5 10 15 20 25 6 8 CG – Load Capacitance (nF) 12 14 16 Fig. 10 Propagation Delay vs. Ambient Temperature Fig. 9 Propagation Delay vs. Series Load Resistance 200 200 VCC = 20V, VEE = 0 VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC CG = 10nF f = 250 kHz, D. Cycle = 50% 160 140 tPHL 120 tPLH 100 IF = 10 mA 180 t P – Propagation Delay (ns) 180 t P – Propagation Delay (ns) 10 IF – Forward LED Current (mA) 80 RG = 10Ω, CG = 10nF f = 250kHz, D. Cycle = 50% 160 tPHL 140 120 tPLH 100 80 60 60 10 20 30 40 50 -40 RG – Series Load Resistance (Ω) -20 0 20 40 60 80 100 TA – Ambient Temperature (°C) Fig. 11 Propagation Delay vs. Supply Voltage 180 IF = 10mA, TA = 25oC RG = 10Ω, CG = 10nF f = 250 kHz, D. Cycle = 50% t P – Propagation Delay (ns) 160 140 tPHL 120 tPLH 100 80 60 10 15 20 25 VCC – Supply Voltage (V) 6 FOD3181 Rev. 1.0.3 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Fig. 8 Propagation Delay vs. Forward LED Current Fig. 7 Propagation Delay vs. Load Capacitance Through Hole 0.4" Lead Spacing PIN 1 ID. 4 3 2 PIN 1 ID. 1 4 3 2 1 0.270 (6.86) 0.250 (6.35) 5 6 7 0.270 (6.86) 0.250 (6.35) 8 5 0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN 0.200 (5.08) 0.140 (3.55) 0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 6 7 8 0.390 (9.91) 0.370 (9.40) SEATING PLANE SEATING PLANE 0.390 (9.91) 0.370 (9.40) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP 0.070 (1.78) 0.045 (1.14) 0.004 (0.10) MIN 0.200 (5.08) 0.140 (3.55) 15° MAX 0.154 (3.90) 0.120 (3.05) 0.300 (7.62) TYP 0.022 (0.56) 0.016 (0.41) 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP Surface Mount 8-Pin DIP – Land Pattern 0.390 (9.91) 0.370 (9.40) 4 3 2 0° to 15° 0.400 (10.16) TYP 0.070 (1.78) 1 PIN 1 ID. 0.060 (1.52) 0.270 (6.86) 0.250 (6.35) 5 6 7 0.100 (2.54) 8 0.295 (7.49) 0.070 (1.78) 0.045 (1.14) 0.020 (0.51) MIN 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP Lead Coplanarity : 0.004 (0.10) MAX 0.415 (10.54) 0.300 (7.62) TYP 0.030 (0.76) 0.016 (0.41) 0.008 (0.20) 0.045 [1.14] 0.315 (8.00) MIN 0.405 (10.30) MIN Note: All dimensions are in inches (millimeters) 7 FOD3181 Rev. 1.0.3 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Package Dimensions FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Ordering Information Example: FOD3181 X X Packaging Option S: Surface Mount Lead Bend SD: Surface Mount, Tape and Reel T: 0.4" Lead Spacing V: VDE Approved TV: VDE Approved, 0.4" Lead Spacing SV: VDE Approved, Surface Mount SDV: VDE Approved, Surface Mount, Tape and Reel Marking Information 1 3181 XX YY B V 3 4 2 6 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 Two digit year code, e.g., ‘03’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code 8 FOD3181 Rev. 1.0.3 www.fairchildsemi.com P0 P2 D0 t K0 E F A0 W1 W B0 d P User Direction of Feed Description D1 Symbol Dimension in mm W 16.0 ± 0.3 t 0.30 ± 0.05 Sprocket Hole Pitch P0 4.0 ± 0.1 Sprocket Hole Diameter D0 1.55 ± 0.05 Sprocket Hole Location E 1.75 ± 0.10 Tape Width Tape Thickness Pocket Location F 7.5 ± 0.1 P2 4.0 ± 0.1 Pocket Pitch P 12.0 ± 0.1 Pocket Dimensions A0 10.30 ±0.20 B0 10.30 ±0.20 K0 4.90 ±0.20 W1 1.6 ± 0.1 d 0.1 max Cover Tape Width Cover Tape Thickness Max. Component Rotation or Tilt Min. Bending Radius 10° R 9 FOD3181 Rev. 1.0.3 30 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Carrier Tape Specifications 245 C, 10–30 s Temperature (°C) 300 260 C peak 250 200 150 Time above 183C, <160 sec 100 50 Ramp up = 2–10C/sec 0 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) • Peak reflow temperature: 260 C (package surface temperature) • Time of temperature higher than 183 C for 160 seconds or less • One time soldering reflow is recommended Output Power Derating The output power is the product of the average output current squared times the output transistor’s RDS(ON): The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125°C. The package power is composed of three elements; the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage (VDD – VEE). The maximum IC static output power is 150mW, (VDD – VEE) = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40°C to +100°C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissipate 100mW of power. PO(AVG) = IO(AVG)2 • RDS(ON) The IO(AVG) is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the ‘on’ time of the output load current divided by the period of the operating frequency. An RDS(ON) of 2.0Ω results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency. The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03µF gate to source capacitance with a series resistance of 40Ω. This reactive load results in a composite average pulse width of 1.5µs. Under this load condition it is not necessary to derate the absolute maximum output current out to 250kHz. The absolute maximum output power dissipation versus ambient temperature is shown in Figure 12. The output driver is capable of supplying 100mW of output power over the temperature range from -40°C to 87°C. The output derates to 90mW at the absolute maximum operating temperature of 100°C. Fig. 13 Output Current Derating vs. Frequency 1.5 IO – Peak Output Current (A) Fig. 12 Absolute Maximum Power Dissipation vs. Ambient Temperature Power Dissipation (W) 0.15 VDD – VEE = Max. = 25V IDD = 6mA LED Power = 45mW 0.1 TA = -40°C to 100°C Load = .03µF +40Ω VDD = 20V IF = 12mA LED Duty Factor = 50% 1 Output Pulse Width = 1.5µs 0.5 0.05 0 1 0 -40 10 250 F – Frequency (kHz) -20 0 20 40 60 80 85 TA – Ambient Temperature (°C) 10 FOD3181 Rev. 1.0.3 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler Reflow Profile This device is tested and specified when driving a complex reactive load. The load consists of a capacitor in the series with a current limiting resistor. The capacitor represents the gate to source capacitance of a power MOSFET transistor. The test load is a 0.03uF capacitor in series with an 40Ω resistor. The LED test frequency is 10.0kHz with a 50% duty cycle. The combined IOH and IOL output load current duty factor is 0.6% at the test frequency. Figure 14 illustrates the relationship of the LED input drive current and the device’s output voltage and sourcing and sinking currents. The 0.03µF capacitor load represents the gate to source capacitance of a very large power MOSFET transistor. A single supply voltage of 20V is used in the evaluation. Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the device. The IOH and IOL are measured at the peak of their respective current pulses. IF = 8mA LED OFF ON 20V N-Channel (ON) P-Channel (ON) OUTPUT 0 IOH = 0.5A Load Current IOL = 0.5A 1µs/Div Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive Pulse Generator FOD3181 8 1 0.1µF 2 7 IOMON VO 0.33µF IFMON 100Ω 3 6 4 5 40Ω 22µF 100Ω Figure 15. Test Schematic 11 FOD3181 Rev. 1.0.3 www.fairchildsemi.com FOD3181 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler IOH and IOL Test Conditions FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22