2SK3130 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3130 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 85 ns • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.12 Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 6 Pulse (Note 1) IDP 24 Drain power dissipation (Tc = 25°C) PD 40 W JEDEC Single pulse avalanche energy (Note 2) EAS 345 mJ JEITA Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current A TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution 1 2006-11-08 2SK3130 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±100 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 600 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cut-OFF current Drain-source breakdown voltage Min IGSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 3 A ⎯ 1.12 1.55 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 3 A 1.5 5.0 ⎯ S Input capacitance Ciss ⎯ 1300 ⎯ Reverse transfer capacitance Crss ⎯ 130 ⎯ Output capacitance Coss ⎯ 400 ⎯ ⎯ 25 ⎯ ⎯ 45 ⎯ Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr Turn-ON time RL = 100 Ω 50 Ω Switching time tf Turn-OFF time VOUT 0V ton Fall time ID = 3 A 10 V VGS VDD ∼ − 300 V Duty < = 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 6 A pF ns ⎯ 40 ⎯ ⎯ 150 ⎯ ⎯ 30 ⎯ ⎯ 18 ⎯ ⎯ 12 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 6 A Pulse drain reverse current IDRP ⎯ ⎯ ⎯ 24 A (Note 1) Forward voltage (diode) VDSF IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 6 A, VGS = 0 V, ⎯ 85 ⎯ ns Qrr dIDR/dt = 100 A/μs ⎯ 0.21 ⎯ μC Reverse recovery charge Marking K3130 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-08 2SK3130 ID – VDS ID – VDS 5 10 15 Common source 15 10 Common source Tc = 25°C 6.4 8 Pulse test Drain current ID (A) Drain current ID (A) 4 6 10 Tc = 25°C 5.8 3 5.6 2 5.4 5.2 1 Pulse test 6.2 6 6.0 5.8 4 5.4 2 VGS = 5.0 V VGS = 5.0 V 0 0 2 4 6 Drain-source voltage 8 0 0 10 VDS (V) 10 20 30 Drain-source voltage ID – VGS 40 VDS 20 Common source Common source Pulse test 6 Drain-source voltage Drain current ID (A) VDS (V) VDS = 20 V 4 100 Tc = 25°C 2 0 0 2 4 6 Gate-source voltage 8 Tc = 25°C 16 Pulse test 12 ID = 6 A 8 3 4 1.5 0 0 10 VGS (V) 4 8 |Yfs| – ID 20 RDS (ON) – ID 10 Tc = 25°C 100 1 1 10 (Ω) Pulse test Common source Drain-source ON resistance RDS (ON) VDS = 20 V |Yfs| (S) 16 VGS (V) 100 Common source Forward transfer admittance 12 Gate-source voltage 100 0.1 0.1 (V) VDS – VGS 10 8 50 Pulse test Tc = 25°C VGS = 10, 15 V 10 1 0.1 100 Drain current ID (A) 1 10 Drain current ID (A) 3 2006-11-08 2SK3130 IDR – VDS RDS (ON) – Tc 5 10 Common source Common source Tc = 25°C (A) Pulse test Drain reverse current IDR Drain-source ON resistance RDS (ON) (Ω) VGS = 10 V 4 ID = 6 A 3 3 1.5 2 1 Pulse test 1 10 0 0 40 80 120 0.1 0 160 Case temperature Tc (°C) 5 −0.2 VGS = 0, −1 V 3 −0.4 −0.6 −0.8 Drain-source voltage Capacitance – VDS VDS (V) 5 Common source Vth (V) Ciss 1000 500 300 Gate threshold voltage (pF) −1.2 Vth – Tc 3000 Capacitance C −1.0 Coss 100 50 Common source 30 VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 0.3 0.5 1 Crss 3 5 Drain-source voltage 10 30 50 100 ID = 1 mA Pulse test 3 2 1 0 −80 VDS (V) VDS = 10 V 4 −40 0 40 80 120 160 Case temperature Tc (°C) (V) 400 16 VDS 30 Drain-source voltage Drain power dissipation PD (W) 40 20 20 10 0 0 40 80 120 160 VDS Case temperature Tc (°C) 12 200 400 200 100 0 0 200 VDD = 100 V 300 Common source ID = 6 A Tc = 25°C Pulse test VGS 10 20 30 40 8 4 VGS (V) Dynamic input/output characteristics 500 Gate-source voltage PD – Tc 50 0 50 Total gate charge Qg (nC) 4 2006-11-08 2SK3130 rth − tw 1 Duty = 0.5 rth (t)/Rth (ch-c) Normalized transient thermal impedance 10 0.2 0.1 0.1 0.05 0.02 0.01 PDM Single pulse 0.01 t T Duty = t/T Rth (ch-c) = 3.125°C/W 0.001 10 μ 100 μ 1m 0.01 Pulse width Safe operating area 0.1 tw (s) 100 Avalanche energy EAS (mJ) 100 μs * Drain current ID (A) ID max (continuous) 1 ms * 1 EAS − Tch DC operation Tc = 25°C 400 300 200 100 0 25 0.1 10 Drain-source voltage 50 75 100 125 150 Channel temperature (initial) Tch (°C) * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 10 500 ID max (pulsed) * 10 1 VDSS max 100 1000 15 V VDS (V) BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 16.8 mH 5 Wave form E AS = ⎛ ⎞ B VDSS 1 ⋅ L ⋅ I2 ⋅ ⎜⎜ ⎟⎟ 2 ⎝ B VDSS − VDD ⎠ 2006-11-08 2SK3130 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-08