AGILENT HCPL-5121-100

Agilent HCPL-5120 & HCPL-5121
DSCC SMD 5962-04204
2.0 Amp Output Current IGBT
Gate Drive Optocoupler
Data Sheet
Description
The HCPL- 5120 contains a
GaAsP LED optically coupled to
an integrated circuit with a
power output stage. The device
is ideally suited for driving
power IGBTs and MOSFETs
used in motor control inverter
applications. The high
operating voltage range of the
output stage provides the drive
voltages required by gate
controlled devices. The voltage
and current supplied by this
optocoupler makes it ideally
suited for directly driving IGBTs
with ratings up to 1200 V/100
A. For IGBTs with higher
ratings, the HCPL- 5120 can be
used to drive a discrete power
stage, which drives the IGBT
gate.
The products are capable of
operation and storage over the
full military temperature range
and can be purchased as either
commercial products, with full
MIL- PRF- 38534 Class H testing,
or from Defense Supply Center
Columbus (DSCC) Standard
Microcircuit Drawing (SMD)
5962- 04204. All devices are
manufactured and tested on a
MIL- PRF- 38534 certified line
and are included in the DSCC
Qualified Manufacturers List,
QML- 38534 for Hybrid
Microcircuits.
Features
Schematic Diagram
• Hermetically Sealed Packages
N/C 1
8 VCC
ANODE 2
7 VO
CATHODE 3
6 VO
• Performance Guaranteed over Full
Military Temperature Range:
-55°C to +125°C
• Manufactured and Tested on a MILPRF-38534 Certified Line
• Dual Marked with Device Part
Number and DSCC Drawing
Number
• QML-38534
N/C 4
SHIELD
5 VEE
Applications
• Industrial and Military
Environments
• High Reliability Systems
• Harsh Industrial Environments
• Transportation, Medical, and Life
Critical Systems
• Uninterruptible Power Supplies
(UPS)
• HCPL-3120 Function Compatibility
• 2.0 A Minimum Peak Output Current
• 0.5V Maximum Low Level Output
Voltage (VOL) Eliminates Need for
Negative Gate Drive
• 10 kV/µs Minimum Common Mode
Rejection (CMR) at VCM = 1000V
• ICC = 5 mA Maximum Supply
Current
• Under Voltage Lock-Out Protection
(UVLO) with Hysteresis
• Wide Operating VCC Range: 15 to 30
Volts
• 500 ns Maximum Propagation Delay
• Isolated IGBT/MOSFET Gate Drive
• AC and Brushless DC Motor Drives
• ± 0.35µs Maximun Delay Between
Devices
• Industrial Inverters
• Switch Mode Power Supplies
(SMPS)
CAUTION: It is advised that normal static precautions be taken in handling and assembly of
this component to prevent damage and/or degradation which may be induced by ESD.
Selection Guide − Package Styles and
Lead Configuration Options
Truth Table
VCC − VEE
“POSITIVE GOING”
(i.e., TURN-ON)
VCC − VEE
“NEGATIVE GOING”
(i.e., TURN-OFF)
VO
OFF
0 − 30 V
0 − 30 V
LOW
ON
0 − 11 V
0 − 9.5 V
LOW
ON
11 − 13.5 V
9.5 − 12 V
TRANSITION
ON
13.5 − 30 V
12 − 30 V
HIGH
LED
Agilent Part Number and Options
Commercial
HCPL-5120
MIL-PRF-38534, Class H HCPL-5121
A 0.1 µF bypass capacitor must be connected between pins 5 and 8.
Standard Lead Finish
Gold Plate
Solder Dipped
Option −200
Butt Cut/Gold Plate
Option −100
Gull Wing/Soldered
Option −300
SMD Part Number
Device Marking
Agilent DESIGNATOR
Agilent P/N
DSCC SMD*
DSCC SMD*
PIN ONE/
ESD IDENT
A
QYYWWZ
HCPL-512x
5962-04204
SGP
01Hxx
50434
COMPLIANCE INDICATOR,*
DATE CODE, SUFFIX (IF NEEDED)
COUNTRY OF MFR.
Agilent CAGE CODE*
* QUALIFIED PARTS ONLY
Outline Drawing
9.40 (0.370)
9.91 (0.390)
0.76 (0.030)
1.27 (0.050)
8.13 (0.320)
MAX.
7.16 (0.282)
7.57 (0.298)
4.32 (0.170)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
3.81 (0.150)
MIN.
0.51 (0.020)
MAX.
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
2
0.20 (0.008)
0.33 (0.013)
7.36 (0.290)
7.87 (0.310)
Prescript for all below
5962-
Either Gold or Solder
0420401HPX
Gold Plate
0420401HPC
Solder Dipped
0420401HPA
Butt Cut/Gold Plate
0420401HYC
Butt Cut/Soldered
0420401HYA
Gull Wing/Soldered
0420401HXA
Hermetic Optocoupler Options
Option
Description
100
Surface mountable hermetic optocoupler with leads trimmed for butt joint assembly. This option is available
on commercial and hi-rel product (see drawings below for details).
4.32 (0.170)
MAX.
0.51 (0.020)
MIN.
1.14 (0.045)
1.40 (0.055)
2.29 (0.090)
2.79 (0.110)
0.20 (0.008)
0.33 (0.013)
0.51 (0.020)
MAX.
7.36 (0.290)
7.87 (0.310)
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
200
Lead finish is solder dipped rather than gold plated. This option is available on commercial and hi-rel product.
DSCC Drawing part numbers contain provisions for lead finish.
300
Surface mountable hermetic optocoupler with leads cut and bent for gull wing assembly. This option is available on commercial and hi-rel product (see drawings below for details). This option has solder dipped leads.
4.57 (0.180)
MAX.
0.51 (0.020)
MIN.
2.29 (0.090)
2.79 (0.110)
1.40 (0.055)
1.65 (0.065)
4.57 (0.180)
MAX.
5° MAX.
0.51 (0.020)
MAX.
0.20 (0.008)
0.33 (0.013)
9.65 (0.380)
9.91 (0.390)
NOTE: DIMENSIONS IN MILLIMETERS (INCHES).
3
Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Units
Storage Temperature
TS
-65
+150
°C
Operating Temperature
TA
-55
+125
°C
Case Temperature
TC
+145
°C
Junction Temperature
TJ
+150
°C
260 for 10s
°C
Lead Solder Temperature
Note
Average Input Current
IF AVG
25
mA
1
Peak Transient Input Current
(<1 µs pulse width, 300 pps)
IF PK
1.0
A
Reverse Input Voltage
VR
5
V
“High” Peak Output Current
IOH (PEAK)
2.5
A
2
“Low” Peak Output Current
IOL (PEAK)
2.5
A
2
Supply Voltage
(VCC-VEE)
0
35
V
Output Voltage
VO (PEAK)
0
VCC
V
Emitter Power Dissipation
PE
45
mW
1
Output Power Dissipation
PO
250
mW
3
Total Power Dissipation
PT
295
mW
4
Notes:
1. No derating required for typical case-to-ambient thermal resistance (θCA=140°C/W). Refer to Figure 35.
2. Maximum pulse width = 10µs, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs with IO peak minimum =
2.0A. See Applications section for additional details on limiting IOH peak.
3. Derate linearly above 102°C free air temperature at a rate of 6mW/°C for typical case-to-ambient thermal resistance (θCA=140°C/W). Refer to Figure 36.
4. Derate linearly above 102°C free air temperature at a rate of 6mW/°C for typical case-to-ambient thermal resistance (θCA=140°C/W). Refer to Figure 35
and 36.
ESD Classification
MIL-STD-883, Method 3015
(▲), Class 1
Recommended Operating Conditions
Parameter
Symbol
Min.
Max.
Units
Power Supply Voltage
(VCC – VEE)
15
30
Volts
Input Current (ON)
IF (ON)
10
18
mA
Input Voltage (OFF)
VF (OFF)
-3.0
0.8
Volts
Operating Temperature
TA
-55
125
°C
4
Electrical Specifications (DC)
Over recommended operating conditions (TA = -55 to +125°C, IF(ON) = 10 to 18 mA, VF(OFF) = -3.0 to 0.8V, VCC = 15 to 30 V,
VEE = Ground), unless otherwise specified.
Parameter
Symbol
High Level
Output Current
IOH
Low Level
Output Current
IOL
High Level
Output Voltage
VOH
Low Level
Output Voltage
VOL
High Level
Supply Current
ICCH
Low Level
Supply Current
ICCL
Test Conditions
VO = (VCC − 4 V)
VO = (VCC − 15 V)
1, 2, 3
VO = (VEE + 2.5 V)
VO = (VEE + 15 V)
Limits
Min.
Typ.*
0.5
1.5
2.0
0.5
1, 2, 3
Fig
Note
A
2, 3, 17
2
A
2.0
A
2.0
1
5, 6, 18
A
(VCC - 4) (VCC − 3)
IO = -100 mA
Units
Max.
2
1
V
1, 3, 19
3, 4
1, 2, 3
IO = 100 mA
0.1
0.5
V
4, 6, 20
2.5
5.0
mA
7, 8
2.5
5.0
mA
3.5
9.0
mA
1, 2, 3
Threshold Input Cur- IFLH
rent Low to High
Output Open,
IF = 10 to 18 mA
1, 2, 3
Output Open,
VF = -3.0 to +0.8V
1, 2, 3
IO = 0 mA,
VO > 5 V
1, 2, 3
Threshold Input
VFHL
Voltage High to Low
Input Forward
Voltage
VF
Temperature
Coefficient of
Forward Voltage
∆VF/∆TA
0.8
9, 15,
21
V
1, 2, 3
IF = 10 mA
1.2
1.5
1.8
V
16
1, 2, 3
IF = 10 mA
Input Reverse
BVR
Breakdown Voltage
IR = 10 µA
Input Capacitance
CIN
f = 1 MHz,
VF = 0 V
UVLO Threshold
VUVLO+
VO > 5 V,
IF = 10 mA
VUVLOUVLO Hysteresis
Group A
Subgroups
(13)
mV/°C
-1.6
5
V
1, 2, 3
80
pF
1, 2, 3
11.0
12.3
13.5
1, 2, 3
9.5
10.7
12.0
UVLOHYS
V
22, 37
1.6
*All typical values at TA = 25°C and VCC − VEE = 30 V, unless otherwise noted.
5
Switching Specifications (AC)
Over recommended operating conditions (TA = -55 to +125°C, IF(ON) = 10 to 18 mA, VF(OFF) = -3.0 to 0.8V, VCC = 15 to 30 V,
VEE = Ground), unless otherwise specified.
Parameter
Propagation Delay
Time to High
Output Level
Symbol
tPLH
Propagation Delay tPHL
Time to Low Output
Level
Pulse Width
Distortion
Test Conditions
Rg = 10 Ω,
Cg = 10 nF,
f = 10 kHz,
Duty Cycle = 50%
Group A
Subgroups
(13)
Limits
Units
Fig
Note
0.50
µs
10, 11,
12, 13,
14, 23
11
0.50
µs
0.3
µs
0.35
µs
33, 34
23
Min.
Typ.*
Max.
0.10
0.30
0.10
0.30
9, 10, 11
9, 10, 11
PWD
9, 10, 11
Propagation Delay PDD
Difference Between (tPHL − tPLH)
Any Two Parts
-0.35
12
Rise Time
tr
0.1
µs
Fall Time
tf
0.1
µs
µs
22
10
kV/µs
24
10
kV/µs
UVLO Turn On Delay tUVLO ON
VO > 5 V, IF = 10 mA
0.8
UVLO Turn Off Delay tUVLO OFF
VO < 5 V, IF = 10 mA
0.6
Output High Level
|CMH|
Common Mode Transient Immunity
IF = 10mA,
VCM = 1000 V,
VCC = 30 V
TA = 25°C
Output Low Level
|CML|
Common Mode Transient Immunity
VCM = 1000 V,
VF = 0 V,
VCC = 30 V
TA = 25°C
9
9
*All typical values at TA = 25°C and VCC − VEE = 30 V, unless otherwise noted.
6
7
9, 10, 11
8,
9,
14
8,
10,
14
Package Characteristics
Over recommended operating conditions (TA = -55 to +125°C) unless otherwise specified.
Parameter
Symbol
Test Conditions
Input-Output
Leakage Current
II-O
VI-O = 1500Vdc
RH = 45%,
t = 5 sec.,
TA = 25°C
Resistance
(Input-Output)
RI-O
VI-O = 500 VDC
Capacitance
(Input-Output)
CI-O
f = 1 MHz
Group A
Subgroups
(13)
Limits
Units
Min.
Typ.*
Fig
Note
Max.
µA
5, 6
1010
Ω
6
2.5
pF
6
1
1.0
*All typicals at TA = 25°C.
Notes:
1. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%. This value is intended to allow for component tolerances for designs with IO peak minimum
= 2.0 A. See Applications section for additional details on limiting IOH peak.
2. Maximum pulse width = 50 µs, maximum duty cycle = 0.5%.
3. In this test VOH is measured with a dc load current. When driving capacitive loads VOH will approach VCC as IOH approaches zero amps.
4. Maximum pulse width = 1 ms, maximum duty cycle = 20%.
5. This is a momentary withstand test, not an operating condition.
6. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together.
7. The difference between tPHL and tPLH between any two HCPL-5120 parts under the same test condition.
8. Pins 1 and 4 need to be connected to LED common.
9. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will
remain in the high state (i.e., VO > 15.0 V).
10. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will
remain in a low state (i.e., VO < 1.0 V).
11. This load condition approximates the gate load of a 1200 V/75A IGBT.
12. Pulse Width Distortion (PWD) is defined as |tPHL-tPLH| for any given device.
13. Standard parts receive 100% testing at 25°C (Subgroups 1 and 9). SMD and Class H parts receive 100% testing at 25, 125, and -55°C (Subgroups 1 and 9,
2 and 10, 3 and 11, respectively).
14. Parameters are tested as part of device initial characterization and after design and process changes. Parameters are guaranteed to limits specified for
all lots not specifically tested.
7
1
2
3
IF = 10mA to 18mA
VOUT = (VCC - 4V)
VCC = 15 to 30V
VEE = 0V
2.2
2.0
1.8
1.6
1.4
4
-55
-35
-15
5
25 45 65 85
TA - TEMPERATURE - oC
-55
105 125
-35
-15
5
25
45
65
85
-2
-3
-4
-6
0.0
0.10
0.05
-55
-35
-15
5
25
45
65
85
3
2
1
105 125
-3 5 -15
5
25
45
65
VCC = 30V
VEE = 0V
IF = 10mA for ICCH
IF = 0mA for ICCL
3.5
3.0
2.5
IF = 10mA for ICCH
IF = 0mA for ICCL
o
TA = 25 C
VEE = 0V
2.0
1.5
1.5
25
45
65
85
o
TA - TEMPERATURE - C
Figure 7. ICC vs. Temperature
105 125
15
20
25
VCC - SUPPLY VOLTAGE - V
Figure 8. ICC vs. VCC
30
IFLH - LOW TO HIGH CURRENT THRESHOLD - mA
2.5
5
4
125 oC
o
25 C
o
-5 C
3
2
1
0.5
1.0
1.5
2.0
IOL - OUTPUT LOW CURRENT - A
2.5
5.0
ICCH
ICCL
ICC - SUPPLY CURRENT - mA
3.0
-55 -35 -15
5
0.0
4.0
3.5
2.5
Figure 6. VOL vs. IOL
ICCH
ICCL
2.0
6
8 5 10 5 125
Figure 5. IOL vs. Temperature
4.0
2.0
VF(OFF) = -3.0 to 0.8V
VCC = 15 to 30V
VEE = 0V
7
o
TA - TEMPERATURE - C
o
TA - TEMPERATURE - C
Figure 4. VOL vs. Temperature
1.5
0
0
-55
0.00
1.0
8
VF(OFF) = -3.0 to 0.8V
VOUT = 2.5V
VCC = 15 to 30V
VEE = 0V
VOL - OUTPUT LOW VOLTAGE - V
ILOW - OUTPUT LOW CURRENT - A
0.15
0.5
Figure 3. VOH vs. IOH
4
0.20
IF = 10 to 18mA
VCC = 15 to 30V
VEE = 0V
-5
IOH - OUTPUT HIGH CURRENT - A
Figure 2. IOH vs. Temperature
VF(OFF) = -3.0 to 0.8V
IOUT = 100mA
VCC = 15 to 30V
VEE = 0V
0.25
ICC - SUPPLY CURRENT - mA
125
125 oC
25 oC
-5 oC
TA - TEMPERATURE - C
0.30
8
105
-1
o
Figure 1. VOH vs. Temperature
VOL - OUTPUT LOW VOLTAGE - V
(VOH - VCC) - OUTPUT HIGH VOLTAGE DROP - V
2.4
IF = 10mA to 18mA
IOUT = -100mA
VCC = 15 to 30V
VEE = 0V
IOH - OUTPUT HIGH CURRENT - A
(VOH - VCC) - HIGH OUTPUT VOLTAGE DROP - V
0
4.5
4.0
VCC = 15 to 30V
VEE = 0V
OUTPUT = OPEN
3.5
3.0
2.5
2.0
1.5
-55 -35 -15
5
25
45
65
85 105 125
o
TA - TEMPERATURE - C
Figure 9. IFLH vs. Temperature
400
300
200
VCC = 30V, VEE = 0V
Rg = 10 Ω, Cg = 10 nF
o
TA = 25 C
Duty Cycle = 50%
f = 10khz
400
TP - PROPAGATION DELAY- ns
IF = 10mA
VCC = 30V, VEE = 0V
Rg = 10 Ω, Cg = 10 nF
Duty Cycle = 50%
o
TA = 25 C, f = 10khz
TP - PROPAGATION DELAY - ns
TP - PROPAGATION DELAY - ns
500
500
500
300
200
6
30
Figure 10. Propagation Delay vs. VCC
100
-55
26
200
TPLH
TPHL
10
20
30
40
50
Figure 13. Propagation Delay vs. Rg
5
25 45 65 85
TA - TEMPERATURE - oC
105 125
400
o
TA = 25 C
25
300
200
20
15
10
5
TPLH
TPHL
0
0
20
40
60
80
Cg - LOAD CAPACITANCE - nF
Rg - SERIES LOAD RESISTANCE - Ω
-15
30
VCC = 30V, VEE = 0V
o
TA = 25 C, IF = 10mA
Rg = 10 Ω
Duty Cycle = 50%
f = 10khz
100
0
-35
Figure 12. Propagation Delay vs. Temperature
VO - OUTPUT VOLTAGE - V
TP - PROPAGATION DELAY -ns
TP - PROPAGATION DELAY -ns
10 12 14 16 18 20 22 24
IF - FORWARD LED CURRENT - mA
500
VCC = 30V, VEE = 0V
o
TA = 25 C, IF = 10mA
Cg = 10 nF
Duty Cycle = 50%
f = 10khz
300
100
8
Figure 11. Propagation Delay vs. IF
500
400
200
TPLH
TPHL
100
100
20
25
VCC - SUPPLY VOLTAGE - V
300
TPLH
TPHL
TPLH
TPHL
15
400
IF = 10mA
VCC = 30V, VEE = 0V
Rg = 10 Ω, Cg = 10 nF
Duty Cycle = 50%
f = 10khz
Figure 14. Propagation Delay vs. Cg
100
0
1
2
3
4
IF - FORWARD LED CURRENT - mA
5
Figure 15. Transfer Characteristics
1000
IF - FORWARD CURRENT - mA
TA = 25oC
100
10
1
0.1
0.01
0.001
1.10
1.20
1.30
1.40
1.50
1.60
VF - FORWARD VOLTAGE - V
Figure 16. Input Current vs. Forward Voltage
9
1
8
0.1 µF
2
+
_ 4V
7
IF = 10 to
18 mA
+ V CC = 15
_ to 30 V
3
6
IOH
4
1
8
0.1 µF
5
2
IOL
7
3
6
4
5
2.5 V
+
_
VCC = 15
to 30 V
+
_
VCC = 15
to 30 V
+
_
Figure 17. IOH Test Circuit
1
8
2
7
0.1 µF
IF = 10 to
18 mA
Figure 18. IOL Test Circuit
VOH
VCC = 15
to 30 V
+
_
3
6
1
100 mA
0.1 µF
5
4
8
2
3
6
4
5
Figure 19. VOH Test Circuit
1
8
0.1 µF
2
Figure 20. VOL Test Circuit
7
IF
VO > 5 V
3
6
4
5
+
_
VCC = 15
to 30 V
Figure 21. IFLH Test Circuit
1
8
0.1 µF
IF = 10 mA
2
7
VO > 5 V
3
6
4
5
Figure 22. UVLO Test Circuit
10
+
_
VCC
100 mA
7
VOL
1
8
+
_
500 Ω
IF
0.1 µF
IF = 10 to 18 mA
2
+
_
7
V CC = 15
to 30 V
tr
tf
VO
10 KHz
50% DUTY
CYCLE
3
6
90%
10 Ω
50%
V OUT
10 nF
4
10%
5
t PLH
Tr = T f <
_ 10 ns
t PHL
Figure 23. tPLH, tPHL, tr, and tf Test Circuit and Waveforms
V CM
1
IF
B
δt
0.1 µF
A
5V
δV
8
2
7
+
_
6
+
_
5
∆t
V OH
SWITCH AT A: IF = 10 mA
VO
+ _
∆t
V CC = 30 V
VO
4
V CM
0V
VO
3
=
V OL
SWITCH AT B: IF = 0 mA
V CM = 1000 V
Figure 24. CMR Test Circuit and Waveforms
11
Applications Information
Eliminating Negative IGBT Gate Drive
To keep the IGBT firmly off, the
HCPL- 5120 has a very low
maximum VOL specification of
0.5 V. The HCPL- 5120 realizes
this very low VOL by using a
DMOS transistor with 1 Ω
(typical) on resistance in its
pull down circuit. When the
HCPL- 5120 is in the low state,
the IGBT gate is shorted to the
emitter by Rg + 1 Ω. Minimizing
Rg and the lead inductance from
the HCPL- 5120 to the IGBT
gate and emitter (possibly by
mounting the HCPL- 5120 on a
small PC board directly above
the IGBT) can eliminate the
need for negative IGBT gate
drive in many applications as
shown in Figure 25. Care should
be taken with such a PC board
design to avoid routing the
IGBT collector or emitter traces
close to the HCPL- 5120 input
as this can result in unwanted
coupling of transient signals
into the HCPL- 5120 and
degrade performance. (If the
IGBT drain must be routed near
the HCPL- 5120 input, then the
LED should be reverse- biased
when in the off state, to prevent
the transient signals coupled
from the IGBT drain from
turning on the HCPL- 5120.)
Selecting the Gate Resistor (Rg) to
Minimize IGBT Switching Losses.
Step 1: Calculate Rg Minimum from
the IOL Peak Specification.
The IGBT and Rg in Figure 26
can be analyzed as a simple RC
circuit with a voltage supplied
by the HCPL- 5120.
(VCC - VEE - VOL)
Rg = –––––––––––––––––
IOLPEAK
(VCC – VEE – 2V)
= ––––––––––––––––––
IOLPEAK
(15 V + 5 V – 2V)
= –––––––––––––––––––
2.5 A
Step 2: Check the HCPL-5120 Power
Dissipation and Increase Rg if
Necessary.
The HCPL- 5120 total power
dissipation (PT) is equal to the
sum of the emitter power (PE)
and the output power (PO):
PT = PE + PO
PE = IF • VF •Duty Cycle
PO = PO(BIAS) + PO (SWITCHING)
= ICC • (VCC - VEE) + ESW(Rg,
Qg) • f
For the circuit in Figure 26
with IF (worst case) = 18 mA,
Rg = 8 Ω, Max Duty Cycle = 80%,
Qg = 500 nC, f = 20 kHz and TA
max = 125°C:
PE = 18 mA•1.8 V•0.8 = 26 mW
= 7.2Ω ≈ 8 Ω
The VOL value of 2 V in the
previous equation is a
conservative value of VOL at the
peak current of 2.5A (see Figure
6). At lower Rg values the
voltage supplied by the HCPL5120 is not an ideal voltage
step. This results in lower peak
currents (more margin) than
predicted by this analysis. When
negative gate drive is not used
VEE in the previous equation is
equal to zero volts
PO = 4.25 mA•20 V + 1.0 µJ • 20
kHz
= 85 mW + 20 mW
= 105 mW
< 112 mW (PO(MAX) @ 125°C
= 250 mW - 23°C • 6 mW/°C)
The value of 4.25 mA for ICC in
the previous equation was
obtained by derating the ICC
max of 5 mA (which occurs at 55°C) to ICC max at 125°C.
Since PO for this case is less
than PO(MAX), Rg of 8 Ω is
appropriate.
+5 V
1
270 Ω
8
0.1 µF
2
+
_
V CC = 18 V
+ HVDC
7
Rg
CONTROL
INPUT
74XXX
OPEN
COLLECTOR
3
6
4
5
Figure 25. Recommended LED Drive and Application Circuit
12
Q1
3-PHASE
AC
Q2
- HVDC
+5 V
1
8
270 Ω
0.1 µF
2
+
_
V CC = 15 V
+ HVDC
7
Rg
Q1
CONTROL
INPUT
74XXX
OPEN
COLLECTOR
3
6
4
5
3-PHASE
AC
_ V EE = -5 V
+
Q2
- HVDC
Figure 26. Typical Application Circuit with Negative IGBT Gate Drive
LED Drive Circuit Considerations for
Ultra High CMR Performance.
PE Parameter Description
IF
1
LED Current
VF
LED On Voltage
Duty Cycle
Maximum LED
Duty Cycle
PO Parameter Description
ICC
Supply Current
VCC
Positive Supply
Voltage
VEE
Negative Supply
Voltage
ESW (Rg, Qg)
Energy Dissipation in
the HCPL-5120 for
each IGBT Switching
Cycle (See Figure 27)
f
Switching Frequency
Esw - ENERGY PER SWITCHING CYCLE - µJ
7
Qg = 100 nC
6
Qg = 250 nC
Qg = 500 nC
5
VCC = 19 V
VEE = -9 V
4
3
2
1
0
0
20
40
60
80
100
Rg - GATE RESISTANCE - Ω
Without a detector shield, the
dominant cause of optocoupler
CMR failure is capacitive
coupling from the input side of
the optocoupler, through the
package, to the detector IC as
shown in Figure 28. The HCPL5120 improves CMR
performance by using a detector
IC with an optically transparent
Faraday shield, which diverts
the capacitively coupled current
away from the sensitive IC
circuitry. However, this shield
does not eliminate the
capacitive coupling between the
LED and optocoupler pins 5- 8
as shown in Figure 29. This
capacitive coupling causes
perturbations in the LED
current during common mode
transients and becomes the
major source of CMR failures
for a shielded optocoupler. The
main design objective of a high
CMR LED drive circuit becomes
keeping the LED in the proper
state (on or off) during common
mode transients. For example,
the recommended application
circuit (Figure 25), can achieve
10 kV/µs CMR while minimizing
component complexity.
Techniques to keep the LED in
the proper state are discussed
in the next two sections.
8
CLEDP
2
7
3
6
CLEDN
4
5
Figure 28. Optocoupler Input to Output Capacitance Model for Unshielded Optocouplers.
CLEDO1
1
8
CLEDP
2
7
CLEDO2
3
4
6
CLEDN
SHIELD
5
Figure 29. Optocoupler Input to Output Capacitance Model for Shielded Optocouplers.
Figure 27. Energy Dissipated in the HCPL-5120
for Each IGBT Switching Cycle
13
CMR with the LED On (CMRH).
CMR with the LED Off (CMRL).
A high CMR LED drive circuit
must keep the LED on during
common mode transients. This
is achieved by overdriving the
LED current beyond the input
threshold so that it is not
pulled below the threshold
during a transient. A minimum
LED current of 10 mA provides
adequate margin over the
maximum IFLH of 7 mA to
achieve 10 kV/µs CMR.
A high CMR LED drive circuit
must keep the LED off (VF ≤
VF(OFF)) during common mode
transients. For example, during
a - dVcm/dt transient in Figure
30, the current flowing through
CLEDP also flows through the
RSAT and VSAT of the logic gate.
As long as the low state voltage
developed across the logic gate
is less than VF(OFF), the LED
will remain off and no common
mode failure will occur.
+5 V
1
8
1
0.1
µF
CLEDP
+
VSAT
_
The open collector drive circuit,
shown in Figure 31, cannot keep
the LED off during a +dVcm/dt
transient, since all the current
flowing through CLEDN must be
supplied by the LED, and it is
not recommended for
applications requiring ultra high
CMRL performance. Figure 32 is
an alternative drive circuit
which, like the recommended
application circuit (Figure 25),
does achieve ultra high CMR
performance by shunting the
LED in the off state.
7
2
+
_
V CC = 18 V
CLEDP
2
ILEDP
3
6
CLEDN
8
+5 V
***
Rg
3
Q1
7
6
CLEDN
ILEDN
4
5
SHIELD
* THE ARROWS INDICATE THE DIRECTION
OF CURRENT FLOW DURING ∆dVCM/dt
+
_
***
4
5
SHIELD
Figure 31. Not Recommended Open Collector
Drive Circuit
V CM
Figure 30. Equivalent Circuit for Figure 25 During Common Mode Transient.
8
1
+5 V
CLEDP
7
2
3
4
6
CLEDN
SHIELD
Figure 32. Recommended LED Drive Circuit for
Ultra-High CMR
14
5
To minimize dead time in a
given design, the turn on of
LED2 should be delayed
(relative to the turn off of
LED1) so that under worst- case
conditions, transistor Q1 has
just turned off when transistor
Q2 turns on, as shown in Figure
33. The amount of delay
necessary to achieve this
conditions is equal to the
maximum value of the
propagation delay difference
specification, PDDMAX, which is
specified to be 350 ns over the
operating temperature range of
- 55°C to 125°C.
Delaying the LED signal by the
maximum propagation delay
difference ensures that the
minimum dead time is zero, but
it does not tell a designer what
the maximum dead time will be.
The maximum dead time is
equivalent to the difference
between the maximum and
minimum propagation delay
difference specifications as
shown in Figure 34. The
maximum dead time for the
HCPL- 5120 is 700 ns (= 350 ns
- (- 350 ns)) over an operating
temperature range of - 55°C to
125°C.
optocouplers under
consideration are typically
mounted in close proximity to
each other and are switching
identical IGBTs.
ILED1
*PDD = PROPAGATION
DELAY DIFFERENCE
V OUT1
Q1 ON
Q1 OFF
Q2 ON
Q2 OFF
V OUT2
NOTE:
FOR PDD CALCULATIONS
THE PROPAGATION DELAYS
ARE TAKEN AT THE SAME
TEMPERATURE AND TEST
CONDITIONS.
ILED2
tPHL MAX
tPLH MIN
PDD* MAX = (tPHL - tPLH)MAX = tPHL MAX - tPLH MIN
Figure 33. Minimum LED Skew for Zero Dead Time
ILED1
*PDD = PROPAGATION
DELAY DIFFERENCE
VOUT1
Q1 ON
Q1 OFF
Q2 ON
VOUT2
Q2 OFF
NOTE:
FOR DEAD TIME AND
PDD CALCULATIONS ALL
PROPAGATION DELAYS ARE
TAKEN AT THE SAME
TEMPERATURE AND TEST
CONDITIONS.
ILED2
tPHL MIN
tPHL MAX
tPLH MIN
tPLH MAX
(tPHL - tPLH) MAX
= PDD* MAX
MAXIMUM DEAD TIME
(DUE TO OPTOCOUPLER)
= (tPHL MAX - tPHL MIN) + (tPLH MAX - tPLH MIN)
= (tPHL MAX - tPLH MIN) - (tPHL MIN - tPLH MAX)
= PDD* MAX - PDD* MIN
Figure 34. Waveforms for Dead Time Calculations
50
300
250
40
PO - OUTPUT POWER - mW
The HCPL- 5120 includes a
Propagation Delay Difference
(PDD) specification intended to
help designers minimize “dead
time” in their power inverter
designs. Dead time is the time
period during which both the
high and low side power
transistors (Q1 and Q2 in
Figure 25) are off. Any overlap
in Q1 and Q2 conduction will
result in large currents flowing
through the power devices
between the high and low
voltage motor rail
Note that the propagation delays
used to calculate PDD and dead
time are taken at equal
temperatures and test
conditions since the
PE - INPUT POWER - mW
IPM Dead Time and Propagation
Delay Specifications.
30
20
10
0
-55
case-to-ambient thermal resistance
= 70 oC/W
o
= 140 C/W
o
= 210 C/W
-25
5
35
95
65
o
TA - AMBIENT TEMPERATURE - C
Figure 35. Input Thermal Derating Curve,
Dependence of case-to-ambient Thermal
Resistance
200
150
100
50
0
-55
125
case-to-ambient thermal resistance
o
= 70 C/W
o
= 140 C/W
o
= 210 C/W
-25
5
35
65
95
o
TA - AMBIENT TEMPERATURE - C
125
Figure 36. Output Thermal Derating Curve,
Dependence of case-to-ambient Thermal
Resistance
15
Under Voltage Lockout Feature.
MIL-PRF-38534 Class H and DSCC
SMD Test Program
7
14
When the HCPL-5120 output is in the
low state and the supply voltage rises
above the HCPL-5120 VUVLO+
threshold (11.0 < VUVLO+ < 13.5) the
optocoupler output will go into the
high state (assuming LED is “ON”)
with a typical delay, UVLO Turn On
Delay of 0.8 µs.
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semiconductors
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of distributors, please go to our web site.
For technical assistance call:
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Data subject to change.
Copyright2004 Agilent Technologies, Inc.
June 28, 2004
5989-0942EN
12
VO - OUTPUT VOLTAGE - V
The HCPL-5120 contains an under
voltage lockout (UVLO) feature that
is designed to protect the IGBT under
fault conditions which cause the
HCPL-5120 supply voltage
(equivalent to the fully-charged IGBT
gate voltage) to drop below a level
necessary to keep the IGBT in a low
resistance state. When the HCPL5120 output is in the high state and the
supply voltage drops below the
HCPL-5120 VUVLO– threshold (9.5 <
VUVLO– < 12.0) the optocoupler
output will go into the low state with a
typical delay, UVLO Turn Off Delay,
of 0.6 µs.
Agilent Technologies’ Hi- Rel
Optocouplers are in compliance
with MIL- PRF- 38534 Class H.
Class H devices are also in
compliance with DSCC drawing
5962- 04204.
(12.3, 10.8)
10
(10.7, 9.2)
8
6
4
2
(10.7, 0.1)
0
0
5
(12.3, 0.1)
10
15
(VCC - VEE) - SUPPLY VOLTAGE - V
Figure 37. Under Voltage Lock Out
20
Testing consists of 100%
screening and quality
conformance inspection to MILPRF- 38534.