ONSEMI NCS2535

NCS2535
Product Preview
Triple 1.0 GHz Current
Feedback Op Amp with
Enable Feature
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NCS2535 is a triple 1.0 GHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
Features
•
•
•
•
•
•
•
•
MARKING
DIAGRAM
16
−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 1.0 GHz Typ
Slew Rate 1500 V/ms
Supply Current 8.5 mA
Input Referred Voltage Noise 6.0 nV/ ǸHz
THD −60 dBc (f = 5.0 MHz, VO = 2.0 Vp−p)
Output Current 150 mA
Enable Pin Available
These are Pb−Free Devices*
1
2535
A
L
Y
W
Applications
•
•
•
•
−IN1
3
NORMAILIZED GAIN(dB)
1
Gain = +2
VS = ±5V
RF = 400W
RL = 150W
1
−
16
EN1
+
15
OUT1
14
VCC1
+IN1
2
VEE1
3
−IN2
4
−
13
EN2
+IN2
5
+
12
OUT2
VEE2
6
11
VCC2
−IN3
7
−
10
OUT3
8
+
9
+IN3
0
−1
EN3
(Top View)
VOUT = 2.0V
−2
−3
ORDERING INFORMATION
VOUT = 1.0V
−4
Package
Shipping †
NCS2535DTG
TSSOP−16
96 Units/Rail
NCS2535DTR2G
TSSOP−16 2500 Tape & Reel
Device
−5
−6
0.01
= NCS2535
= Assembly Location
= Wafer Lot
= Year
= Work Week
TSSOP−16 PINOUT
High Resolution Video
Line Driver
High−Speed Instrumentation
Wide Dynamic Range IF Amp
2
NCS
2535
ALYW
TSSOP−16
DT SUFFIX
CASE 948F
VOUT = 0.5V
0.1
10
100
1
FREQUENCY (MHz)
1000
10k
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Figure 1. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. P0
1
Publication Order Number:
NCS2535/D
NCS2535
PIN FUNCTION DESCRIPTION
Pin
Symbol
Function
9, 12, 15
OUTx
Output
Equivalent Circuit
VCC
ESD
OUT
VEE
3, 6
VEE
Negative Power Supply
2, 5, 8
+INx
Non−inverted Input
VCC
ESD
ESD
+IN
−IN
VEE
1, 4, 7
−INx
Inverted Input
11, 14
VCC
Positive Power Supply
See Above
10, 13, 16
EN
Enable
VCC
EN
ESD
VEE
ENABLE PIN TRUTH TABLE
Enable
High
Low*
Disabled
Enabled
*Default open state
VCC
+IN
OUT
−IN
CC
VEE
Figure 2. Simplified Device Schematic
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2
NCS2535
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Flammability Rating
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
Vdc
Input Voltage Range
VI
vVS
Vdc
Input Differential Voltage Range
VID
vVS
Vdc
Output Current
IO
100
mA
Maximum Junction Temperature (Note 3)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
RqJA
156
°C/W
Thermal Resistance, Junction−to−Air
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
Maximum Power Dissapation (mW)
1800
The maximum power that can be safely dissipated is
limited by the associated rise in junction temperature. For
the plastic packages, the maximum safe junction
temperature is 150°C. If the maximum is exceeded
momentarily, proper circuit operation will be restored as
soon as the die temperature is reduced. Leaving the device
in the “overheated’’ condition for an extended period can
result in device damage. To ensure proper operation, it is
important to observe the derating curves.
1600
1400
1200
1000
800
600
400
200
0
−50
−25
0
25
50
75
100
Ambient Temperature (C)
125
Figure 3. Power Dissipation vs. Temperature
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3
150
NCS2535
AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p
1000
450
AV = +2.0
120
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
°
Slew Rate
AV = +2.0, Vstep = 2.0 V
1500
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 2.0 V
AV = +2.0, Vstep = 2.0 V
9.0
7.0
(10%−90%) AV = +2.0, Vstep = 2.0 V
1.5
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time
55
ns
tOFF
Turn−off Time
55
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−60
dBc
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−62
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−66
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 1.0 Vp−p
34
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 2.0 Vp−p
55
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
6.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
10
3.0
pAń ǸHz
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NCS2535
DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
0
"5.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
6.0
mV/°C
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 4)
"3.0
"6.0
mA
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
+40
−10
nA/°C
Input Offset Voltage
Temperature Coefficient
Input Bias Current
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 4)
VIL
Input Low Voltage (Enable)
(Note 4)
2.5
V
−2.5
V
INPUT CHARACTERISTICS
VCM
CMRR
"3.0
V
(See Graph)
55
dB
+Input (Non−Inverting)
−Input (Inverting)
100
50
MW
W
1.0
pF
0.1
W
"3.0
V
"120
mA
10
V
Input Common Mode Voltage
Range
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
VO
Output Voltage Range
IO
Output Current
"90
POWER SUPPLY
VS
Operating Voltage Supply
Range
IS,ON
Power Supply Current −
Enabled per amplifier
VO = 0 V
8.5
mA
IS,OFF
Power Supply Current −
Disabled per amplifier
VO = 0 V
0.11
mA
Channel to Channel, f = 5.0 MHz
60
dB
(See Graph)
40
dB
Crosstalk
PSRR
Power Supply Rejection
Ratio
4. Guaranteed by design and/or characterization.
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NCS2535
AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 1.0 Vp−p
600
300
AV = +2.0
100
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.01
°
Slew Rate
AV = +2.0, Vstep = 1.0 V
1000
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 1.0 V
AV = +2.0, Vstep = 1.0 V
12
9.0
(10%−90%) AV = +2.0, Vstep = 1.0 V
2.0
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time
55
ns
tOFF
Turn−off Time
55
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−60
dBc
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−62
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−66
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 0.5 Vp−p
28
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 1.0 Vp−p
55
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
6.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
10
3.0
pAń ǸHz
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NCS2535
DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
0
"5.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
6.0
mV/°C
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 5)
"3.0
"6.0
mA
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
+40
−10
nA/°C
Input Offset Voltage
Temperature Coefficient
Input Bias Current
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 5)
VIL
Input Low Voltage (Enable)
(Note 5)
1.875
V
−1.875
V
INPUT CHARACTERISTICS
VCM
CMRR
"1.0
V
(See Graph)
55
dB
+Input (Non−Inverting)
−Input (Inverting)
100
50
MW
W
1.0
pF
0.1
W
"1.2
V
"120
mA
5.0
V
Input Common Mode Voltage
Range
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
VO
Output Voltage Range
IO
Output Current
"90
POWER SUPPLY
VS
Operating Voltage Supply
Range
IS,ON
Power Supply Current −
Enabled per amplifier
VO = 0 V
8.0
mA
IS,OFF
Power Supply Current −
Disabled per amplifier
VO = 0 V
0.09
mA
Channel to Channel, f = 5.0 MHz
60
dB
(See Graph)
40
dB
Crosstalk
PSRR
Power Supply Rejection
Ratio
5. Guaranteed by design and/or characterization.
+
−
VIN
VOUT
RL
RF
RF
Figure 4. Typical Test Setup
(AV = +2.0, RF = 400 W, RL = 150 W)
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7
3
5
2
4
NORMAILIZED GAIN(dB)
NORMAILIZED GAIN(dB)
NCS2535
1
0
−1
VOUT = 2.0V
−2
−3
Gain = +2
VS = ±5V
RF = 400W
RL = 150W
−4
−5
−6
0.01
0.1
VOUT = 1.0V
2
1
0
−1
−2
−3
−4
VOUT = 0.5V
1
10
100
FREQUENCY (MHz)
3
1000
VOUT = 2.0V
Gain = +2
VS = ±5V
RF = 400W
RL = 150W
−5
0.01
10k
0.1
3
5
2
4
1
0
−1
−2
−3
−4
−5
Gain = +2
VS = ±5V
VOUT = 2V
RF = 400W
RL = 150W
−6
0.01
0.1
100
1
10
FREQUENCY (MHz)
3
1000
10k
Gain = +1
2
1
0
Gain = +2
−1
VS = ±5V
VOUT = 0.5V
RF = 400W
RL = 150W
−2
−3
−4
1
10
100
FREQUENCY (MHz)
VOUT = 0.5V
Figure 6. Frequency Response:
Gain (dB) vs. Frequency
Av = +1.0
NORMAILIZED GAIN(dB)
NORMAILIZED GAIN(dB)
Figure 5. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
VOUT = 1.0V
1000
−5
0.01
10k
Figure 7. Large Signal Frequency Response
Gain (dB) vs. Frequency
0.1
1
10
100
FREQUENCY (MHz)
1000
10k
Figure 8. Small Signal Frequency Response
Gain (dB) vs. Frequency
VS = ±5V
VS = ±5V
Figure 9. Small Signal Step Response
Vertical: 1V/div
Horizontal: 10ns/div
Figure 10. Large Signal Step Response
Vertical: 2V/div
Horizontal: 10ns/div
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8
NCS2535
0.03
0.02
0.01
0
3.58MHz
4.43MHz
10MHz
0.015
DIFFERENTIAL PHASE (°)
0.02
DIFFERENTIAL GAIN (%)
3.58MHz
4.43MHz
10MHz
20MHz
50MHz
VS = 5V
RL = 150W
Gain = +2
0.01
20MHz
50MHz
0.005
0
−0.005
−0.01
−0.02
−0.01
VS = 5V
RL = 150W
Gain = +2
−0.015
−0.03
−0.8
−0.6
−0.4 −0.2
0
0.2
0.4
OFFSET VOLTAGE (V)
0.6
−0.02
−0.8
0.8
−0.6
Figure 11. Differential Gain
−0.4 −0.2
0
0.2
0.4
OFFSET VOLTAGE (V)
0.6
Figure 12. Differential Phase
0.13
11
85°C
0.125
10.5
0.12
CURRENT (mA)
85°C
CURRENT (mA)
0.8
10
25°C
9.5
9
0.11
0.105
0.1
−40°C
0.095
0.09
−40°C
8.5
25°C
0.115
0.085
8
0.08
4
5
6
7
8
9
POWER SUPPLY VOLTAGE (V)
10
11
4
Figure 13. Supply Current vs. Power Supply
(Enabled)
5
6
7
8
9
POWER SUPPLY VOLTAGE (V)
10
11
Figure 14. Supply Current vs. Power Supply
(Disabled)
8
1M
100k
7
6.5
TRANSIMPEDANCE (W)
OUPUT VOLTAGE (VPP)
7.5
25°C
6
85°C
5.5
−40°C
5
4.5
4
10k
1k
100
10
3.5
3
4
5
6
7
8
9
POWER SUPPLY VOLTAGE (V)
10
11
Figure 15. Output Voltage Swing vs. Supply Voltage
1
0.01
0.1
10
1
100
FREQUENCY (MHz)
1000
10k
Figure 16. Transimpedance (ROL) vs. Frequency
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NCS2535
VS = ±5V
VS = ±5V
EN
EN
OUT
OUT
Output Signal: Squarewave, 10MHz, 2VPP
Output Signal: Squarewave, 10MHz, 2VPP
Figure 17. Turn ON Time Delay
Vertical: (EN) 500mV/div (OUT) 1V/div
Horizontal: 40ns/div
Figure 18. Turn OFF Time Delay
Vertical: (EN) 500mV/div (OUT) 1V/div
Horizontal: 40ns/div
0
CROSSTALK (dBc)
−20
Gain = +2
VS = ±5V
−40
Channel 1
−60
Channel 3
−80
−100
−120
0.01
0.1
10
1
100
FREQUENCY (MHz)
1000
Figure 19. Crosstalk (dBc) vs. Frequency
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10
10k
NCS2535
General Design Considerations
use a current feedback amplifier with the output shorted
directly to the inverting input.
The current feedback amplifier is optimized for use in
high performance video and data acquisition systems. For
current feedback architecture, its closed−loop bandwidth
depends on the value of the feedback resistor. The
closed−loop bandwidth is not a strong function of gain, as is
for a voltage feedback amplifier, as shown in Figure 20.
10
Proper high speed PCB design rules should be used for all
wideband amplifiers as the PCB parasitics can affect the
overall performance. Most important are stray capacitances
at the output and inverting input nodes as it can effect
peaking and bandwidth. A space (3/16″ is plenty) should be
left around the signal lines to minimize coupling. Also,
signal lines connecting the feedback and gain resistors
should be short enough so that their associated inductance
does not cause high frequency gain errors. Line lengths less
than 1/4″ are recommended.
RF = 300 W
5
GAIN (dB)
Printed Circuit Board Layout Techniques
RF = 400 W
RF = 500 W
0
RF = 600 W
−5
Video Performance
This device designed to provide good performance with
NTSC, PAL, and HDTV video signals. Best performance is
obtained with back terminated loads as performance is
degraded as the load is increased. The back termination
reduces reflections from the transmission line and
effectively masks transmission line and other parasitic
capacitances from the amplifier output stage.
−10
−15
−20
0.1
AV = +2
VCC = +5 V
VEE = −5 V
1.0
10
100
1000
10000
FREQUENCY (MHz)
Figure 20. Frequency Response vs. RF
ESD Protection
All device pins have limited ESD protection using internal
diodes to power supplies as specified in the attributes table
(see Figure 21). These diodes provide moderate protection
to input overdrive voltages above the supplies. The ESD
diodes can support high input currents with current limiting
series resistors. Keep these resistor values as low as possible
since high values degrade both noise performance and
frequency response. Under closed−loop operation, the ESD
diodes have no effect on circuit performance. However,
under certain conditions the ESD diodes will be evident. If
the device is driven into a slewing condition, the ESD diodes
will clamp large differential voltages until the feedback loop
restores closed−loop operation. Also, if the device is
powered down and a large input signal is applied, the ESD
diodes will conduct.
NOTE: Human Body Model for +IN and –IN pins are
rated at 0.8kV while all other pins are rated at
2.0kV.
The −3.0 dB bandwidth is, to some extent, dependent on
the power supply voltages. By using lower power supplies,
the bandwidth is reduced, because the internal capacitance
increases. Smaller values of feedback resistor can be used at
lower supply voltages, to compensate for this affect.
Feedback and Gain Resistor Selection for Optimum
Frequency Response
A current feedback operational amplifier’s key advantage
is the ability to maintain optimum frequency response
independent of gain by using appropriate values for the
feedback resistor. To obtain a very flat gain response, the
feedback resistor tolerance should be considered as well.
Resistor tolerance of 1% should be used for optimum
flatness. Normally, lowering RF resistor from its
recommended value will peak the frequency response and
extend the bandwidth while increasing the value of RF
resistor will cause the frequency response to roll off faster.
Reducing the value of RF resistor too far below its
recommended value will cause overshoot, ringing, and
eventually oscillation.
Since each application is slightly different, it is worth
some experimentation to find the optimal RF for a given
circuit. A value of the feedback resistor that produces
X0.1 dB of peaking is the best compromise between
stability and maximal bandwidth. It is not recommended to
VCC
Internal
Circuitry
External
Pin
VEE
Figure 21. Internal ESD Protection
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NCS2535
PACKAGE DIMENSIONS
TSSOP−16
DT SUFFIX
CASE 948F−01
ISSUE O
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
K
ÉÉ
ÇÇÇ
ÇÇÇ
ÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
M
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE −W−.
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
D
DETAIL E
G
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193
0.200
0.169
0.177
−−− 0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.007
0.011
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
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