NCS2535 Product Preview Triple 1.0 GHz Current Feedback Op Amp with Enable Feature http://onsemi.com NCS2535 is a triple 1.0 GHz current feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The current feedback architecture allows for a superior bandwidth and low power consumption. This device features an enable pin. Features • • • • • • • • MARKING DIAGRAM 16 −3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 1.0 GHz Typ Slew Rate 1500 V/ms Supply Current 8.5 mA Input Referred Voltage Noise 6.0 nV/ ǸHz THD −60 dBc (f = 5.0 MHz, VO = 2.0 Vp−p) Output Current 150 mA Enable Pin Available These are Pb−Free Devices* 1 2535 A L Y W Applications • • • • −IN1 3 NORMAILIZED GAIN(dB) 1 Gain = +2 VS = ±5V RF = 400W RL = 150W 1 − 16 EN1 + 15 OUT1 14 VCC1 +IN1 2 VEE1 3 −IN2 4 − 13 EN2 +IN2 5 + 12 OUT2 VEE2 6 11 VCC2 −IN3 7 − 10 OUT3 8 + 9 +IN3 0 −1 EN3 (Top View) VOUT = 2.0V −2 −3 ORDERING INFORMATION VOUT = 1.0V −4 Package Shipping † NCS2535DTG TSSOP−16 96 Units/Rail NCS2535DTR2G TSSOP−16 2500 Tape & Reel Device −5 −6 0.01 = NCS2535 = Assembly Location = Wafer Lot = Year = Work Week TSSOP−16 PINOUT High Resolution Video Line Driver High−Speed Instrumentation Wide Dynamic Range IF Amp 2 NCS 2535 ALYW TSSOP−16 DT SUFFIX CASE 948F VOUT = 0.5V 0.1 10 100 1 FREQUENCY (MHz) 1000 10k †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. P0 1 Publication Order Number: NCS2535/D NCS2535 PIN FUNCTION DESCRIPTION Pin Symbol Function 9, 12, 15 OUTx Output Equivalent Circuit VCC ESD OUT VEE 3, 6 VEE Negative Power Supply 2, 5, 8 +INx Non−inverted Input VCC ESD ESD +IN −IN VEE 1, 4, 7 −INx Inverted Input 11, 14 VCC Positive Power Supply See Above 10, 13, 16 EN Enable VCC EN ESD VEE ENABLE PIN TRUTH TABLE Enable High Low* Disabled Enabled *Default open state VCC +IN OUT −IN CC VEE Figure 2. Simplified Device Schematic http://onsemi.com 2 NCS2535 ATTRIBUTES Characteristics Value ESD Human Body Model Machine Model Charged Device Model 2.0 kV (Note 1) 200 V 1.0 kV Moisture Sensitivity (Note 2) Flammability Rating Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in 1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV. 2. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage VS 11 Vdc Input Voltage Range VI vVS Vdc Input Differential Voltage Range VID vVS Vdc Output Current IO 100 mA Maximum Junction Temperature (Note 3) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −60 to +150 °C Power Dissipation PD (See Graph) mW RqJA 156 °C/W Thermal Resistance, Junction−to−Air Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION Maximum Power Dissapation (mW) 1800 The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150°C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. To ensure proper operation, it is important to observe the derating curves. 1600 1400 1200 1000 800 600 400 200 0 −50 −25 0 25 50 75 100 Ambient Temperature (C) 125 Figure 3. Power Dissipation vs. Temperature http://onsemi.com 3 150 NCS2535 AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW GF0.1dB Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p 1000 450 AV = +2.0 120 MHz dG Differential Gain AV = +2.0, RL = 150 W, f = 3.58 MHz 0.01 % dP Differential Phase AV = +2.0, RL = 150 W, f = 3.58 MHz 0.01 ° Slew Rate AV = +2.0, Vstep = 2.0 V 1500 V/ms Settling Time 0.01% 0.1% AV = +2.0, Vstep = 2.0 V AV = +2.0, Vstep = 2.0 V 9.0 7.0 (10%−90%) AV = +2.0, Vstep = 2.0 V 1.5 ns TIME DOMAIN RESPONSE SR ts ns tr tf Rise and Fall Time tON Turn−on Time 55 ns tOFF Turn−off Time 55 ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −60 dBc HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −62 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −66 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 1.0 Vp−p 34 dBm Spurious−Free Dynamic Range f = 5.0 MHz, VO = 2.0 Vp−p 55 dBc SFDR eN Input Referred Voltage Noise f = 1.0 MHz 6.0 nVń ǸHz iN Input Referred Current Noise f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting 10 3.0 pAń ǸHz http://onsemi.com 4 NCS2535 DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit 0 "5.0 mV DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT Input Offset Voltage 6.0 mV/°C +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 4) "3.0 "6.0 mA +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V +40 −10 nA/°C Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient VIH Input High Voltage (Enable) (Note 4) VIL Input Low Voltage (Enable) (Note 4) 2.5 V −2.5 V INPUT CHARACTERISTICS VCM CMRR "3.0 V (See Graph) 55 dB +Input (Non−Inverting) −Input (Inverting) 100 50 MW W 1.0 pF 0.1 W "3.0 V "120 mA 10 V Input Common Mode Voltage Range Common Mode Rejection Ratio RIN Input Resistance CIN Differential Input Capacitance OUTPUT CHARACTERISTICS ROUT Output Resistance VO Output Voltage Range IO Output Current "90 POWER SUPPLY VS Operating Voltage Supply Range IS,ON Power Supply Current − Enabled per amplifier VO = 0 V 8.5 mA IS,OFF Power Supply Current − Disabled per amplifier VO = 0 V 0.11 mA Channel to Channel, f = 5.0 MHz 60 dB (See Graph) 40 dB Crosstalk PSRR Power Supply Rejection Ratio 4. Guaranteed by design and/or characterization. http://onsemi.com 5 NCS2535 AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 400 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW GF0.1dB Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 1.0 Vp−p 600 300 AV = +2.0 100 MHz dG Differential Gain AV = +2.0, RL = 150 W, f = 3.58 MHz 0.01 % dP Differential Phase AV = +2.0, RL = 150 W, f = 3.58 MHz 0.01 ° Slew Rate AV = +2.0, Vstep = 1.0 V 1000 V/ms Settling Time 0.01% 0.1% AV = +2.0, Vstep = 1.0 V AV = +2.0, Vstep = 1.0 V 12 9.0 (10%−90%) AV = +2.0, Vstep = 1.0 V 2.0 ns TIME DOMAIN RESPONSE SR ts ns tr tf Rise and Fall Time tON Turn−on Time 55 ns tOFF Turn−off Time 55 ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −60 dBc HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −62 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −66 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 0.5 Vp−p 28 dBm Spurious−Free Dynamic Range f = 5.0 MHz, VO = 1.0 Vp−p 55 dBc SFDR eN Input Referred Voltage Noise f = 1.0 MHz 6.0 nVń ǸHz iN Input Referred Current Noise f = 1.0 MHz, Inverting f = 1.0 MHz, Non−Inverting 10 3.0 pAń ǸHz http://onsemi.com 6 NCS2535 DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit 0 "5.0 mV DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT Input Offset Voltage 6.0 mV/°C +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V (Note 5) "3.0 "6.0 mA +Input (Non−Inverting), VO = 0 V −Input (Inverting), VO = 0 V +40 −10 nA/°C Input Offset Voltage Temperature Coefficient Input Bias Current Input Bias Current Temperature Coefficient VIH Input High Voltage (Enable) (Note 5) VIL Input Low Voltage (Enable) (Note 5) 1.875 V −1.875 V INPUT CHARACTERISTICS VCM CMRR "1.0 V (See Graph) 55 dB +Input (Non−Inverting) −Input (Inverting) 100 50 MW W 1.0 pF 0.1 W "1.2 V "120 mA 5.0 V Input Common Mode Voltage Range Common Mode Rejection Ratio RIN Input Resistance CIN Differential Input Capacitance OUTPUT CHARACTERISTICS ROUT Output Resistance VO Output Voltage Range IO Output Current "90 POWER SUPPLY VS Operating Voltage Supply Range IS,ON Power Supply Current − Enabled per amplifier VO = 0 V 8.0 mA IS,OFF Power Supply Current − Disabled per amplifier VO = 0 V 0.09 mA Channel to Channel, f = 5.0 MHz 60 dB (See Graph) 40 dB Crosstalk PSRR Power Supply Rejection Ratio 5. Guaranteed by design and/or characterization. + − VIN VOUT RL RF RF Figure 4. Typical Test Setup (AV = +2.0, RF = 400 W, RL = 150 W) http://onsemi.com 7 3 5 2 4 NORMAILIZED GAIN(dB) NORMAILIZED GAIN(dB) NCS2535 1 0 −1 VOUT = 2.0V −2 −3 Gain = +2 VS = ±5V RF = 400W RL = 150W −4 −5 −6 0.01 0.1 VOUT = 1.0V 2 1 0 −1 −2 −3 −4 VOUT = 0.5V 1 10 100 FREQUENCY (MHz) 3 1000 VOUT = 2.0V Gain = +2 VS = ±5V RF = 400W RL = 150W −5 0.01 10k 0.1 3 5 2 4 1 0 −1 −2 −3 −4 −5 Gain = +2 VS = ±5V VOUT = 2V RF = 400W RL = 150W −6 0.01 0.1 100 1 10 FREQUENCY (MHz) 3 1000 10k Gain = +1 2 1 0 Gain = +2 −1 VS = ±5V VOUT = 0.5V RF = 400W RL = 150W −2 −3 −4 1 10 100 FREQUENCY (MHz) VOUT = 0.5V Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0 NORMAILIZED GAIN(dB) NORMAILIZED GAIN(dB) Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 VOUT = 1.0V 1000 −5 0.01 10k Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency 0.1 1 10 100 FREQUENCY (MHz) 1000 10k Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency VS = ±5V VS = ±5V Figure 9. Small Signal Step Response Vertical: 1V/div Horizontal: 10ns/div Figure 10. Large Signal Step Response Vertical: 2V/div Horizontal: 10ns/div http://onsemi.com 8 NCS2535 0.03 0.02 0.01 0 3.58MHz 4.43MHz 10MHz 0.015 DIFFERENTIAL PHASE (°) 0.02 DIFFERENTIAL GAIN (%) 3.58MHz 4.43MHz 10MHz 20MHz 50MHz VS = 5V RL = 150W Gain = +2 0.01 20MHz 50MHz 0.005 0 −0.005 −0.01 −0.02 −0.01 VS = 5V RL = 150W Gain = +2 −0.015 −0.03 −0.8 −0.6 −0.4 −0.2 0 0.2 0.4 OFFSET VOLTAGE (V) 0.6 −0.02 −0.8 0.8 −0.6 Figure 11. Differential Gain −0.4 −0.2 0 0.2 0.4 OFFSET VOLTAGE (V) 0.6 Figure 12. Differential Phase 0.13 11 85°C 0.125 10.5 0.12 CURRENT (mA) 85°C CURRENT (mA) 0.8 10 25°C 9.5 9 0.11 0.105 0.1 −40°C 0.095 0.09 −40°C 8.5 25°C 0.115 0.085 8 0.08 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 4 Figure 13. Supply Current vs. Power Supply (Enabled) 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 Figure 14. Supply Current vs. Power Supply (Disabled) 8 1M 100k 7 6.5 TRANSIMPEDANCE (W) OUPUT VOLTAGE (VPP) 7.5 25°C 6 85°C 5.5 −40°C 5 4.5 4 10k 1k 100 10 3.5 3 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) 10 11 Figure 15. Output Voltage Swing vs. Supply Voltage 1 0.01 0.1 10 1 100 FREQUENCY (MHz) 1000 10k Figure 16. Transimpedance (ROL) vs. Frequency http://onsemi.com 9 NCS2535 VS = ±5V VS = ±5V EN EN OUT OUT Output Signal: Squarewave, 10MHz, 2VPP Output Signal: Squarewave, 10MHz, 2VPP Figure 17. Turn ON Time Delay Vertical: (EN) 500mV/div (OUT) 1V/div Horizontal: 40ns/div Figure 18. Turn OFF Time Delay Vertical: (EN) 500mV/div (OUT) 1V/div Horizontal: 40ns/div 0 CROSSTALK (dBc) −20 Gain = +2 VS = ±5V −40 Channel 1 −60 Channel 3 −80 −100 −120 0.01 0.1 10 1 100 FREQUENCY (MHz) 1000 Figure 19. Crosstalk (dBc) vs. Frequency http://onsemi.com 10 10k NCS2535 General Design Considerations use a current feedback amplifier with the output shorted directly to the inverting input. The current feedback amplifier is optimized for use in high performance video and data acquisition systems. For current feedback architecture, its closed−loop bandwidth depends on the value of the feedback resistor. The closed−loop bandwidth is not a strong function of gain, as is for a voltage feedback amplifier, as shown in Figure 20. 10 Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16″ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4″ are recommended. RF = 300 W 5 GAIN (dB) Printed Circuit Board Layout Techniques RF = 400 W RF = 500 W 0 RF = 600 W −5 Video Performance This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. −10 −15 −20 0.1 AV = +2 VCC = +5 V VEE = −5 V 1.0 10 100 1000 10000 FREQUENCY (MHz) Figure 20. Frequency Response vs. RF ESD Protection All device pins have limited ESD protection using internal diodes to power supplies as specified in the attributes table (see Figure 21). These diodes provide moderate protection to input overdrive voltages above the supplies. The ESD diodes can support high input currents with current limiting series resistors. Keep these resistor values as low as possible since high values degrade both noise performance and frequency response. Under closed−loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed−loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. NOTE: Human Body Model for +IN and –IN pins are rated at 0.8kV while all other pins are rated at 2.0kV. The −3.0 dB bandwidth is, to some extent, dependent on the power supply voltages. By using lower power supplies, the bandwidth is reduced, because the internal capacitance increases. Smaller values of feedback resistor can be used at lower supply voltages, to compensate for this affect. Feedback and Gain Resistor Selection for Optimum Frequency Response A current feedback operational amplifier’s key advantage is the ability to maintain optimum frequency response independent of gain by using appropriate values for the feedback resistor. To obtain a very flat gain response, the feedback resistor tolerance should be considered as well. Resistor tolerance of 1% should be used for optimum flatness. Normally, lowering RF resistor from its recommended value will peak the frequency response and extend the bandwidth while increasing the value of RF resistor will cause the frequency response to roll off faster. Reducing the value of RF resistor too far below its recommended value will cause overshoot, ringing, and eventually oscillation. Since each application is slightly different, it is worth some experimentation to find the optimal RF for a given circuit. A value of the feedback resistor that produces X0.1 dB of peaking is the best compromise between stability and maximal bandwidth. It is not recommended to VCC Internal Circuitry External Pin VEE Figure 21. Internal ESD Protection http://onsemi.com 11 NCS2535 PACKAGE DIMENSIONS TSSOP−16 DT SUFFIX CASE 948F−01 ISSUE O 16X K REF 0.10 (0.004) 0.15 (0.006) T U M T U V S S S K ÉÉ ÇÇÇ ÇÇÇ ÉÉ K1 2X L/2 16 9 J1 B −U− L SECTION N−N J PIN 1 IDENT. 8 1 N 0.15 (0.006) T U S 0.25 (0.010) A −V− M N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH. PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. F DETAIL E −W− C 0.10 (0.004) −T− SEATING PLANE H D DETAIL E G DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 −−− 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.18 0.28 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 −−− 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.007 0.011 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 12 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NCS2535/D