Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 SST32HF202 / 402 / 8022Mb Flash + 2Mb SRAM, 4Mb Flash + 2Mb SRAM, 8Mb Flash + 2Mb SRAM (x16) MCP ComboMemory Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF202: 128K x16 Flash + 128K x16 SRAM – SST32HF402: 256K x16 Flash + 128K x16 SRAM – SST32HF802: 512K x16 Flash + 128K x16 SRAM • Single 2.7-3.3V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while Erase/Program Flash • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 15 mA (typical) for Flash or SRAM Read – Standby Current: 20 µA (typical) • Flexible Erase Capability – Uniform 2 KWord sectors – Uniform 32 KWord size blocks • Fast Read Access Times: – Flash: 70 ns – SRAM: 70 ns • Latched Address and Data for Flash • Flash Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Word-Program Time: 14 µs (typical) – Chip Rewrite Time: SST32HF202: 2 seconds (typical) SST32HF402: 4 seconds (typical) SST32HF802: 8 seconds (typical) • Flash Automatic Erase and Program Timing – Internal VPP Generation • Flash End-of-Write Detection – Toggle Bit – Data# Polling • CMOS I/O Compatibility • JEDEC Standard Command Set • Conforms to Flash pinout • Packages Available – 48-ball LFBGA (6mm x 8mm) – 48-ball LBGA (10mm x 12mm) (SST32HF802 only) • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The SST32HF202/402/802 ComboMemory devices integrate a 128K x16, 256K x16, 512K x16 CMOS flash memory bank with a 128K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP), manufactured with SST’s proprietary, high performance SuperFlash technology. Featuring high performance Word-Program, the flash memory bank provides a maximum Word-Program time of 14 µsec. The entire flash memory bank can be erased and programmed word-by-word in typically 2 seconds for the SST32HF202, 4 seconds for the SST32HF402, and 8 seconds for the SST32HF802, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent flash write, the SST32HF202/402/802 devices contain onchip hardware and software data protection schemes. The SST32HF202/402/802 devices offer a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST32HF202/402/802 devices consist of two independent memory banks with respective bank enable signals. The Flash and SRAM memory banks are superimposed in the same memory address space. Both ©2005 Silicon Storage Technology, Inc. S71209-06-000 5/05 1 memory banks share common address lines, data lines, WE# and OE#. The memory bank selection is done by memory bank enable signals. The SRAM bank enable signal, BES# selects the SRAM bank. The flash memory bank enable signal, BEF# selects the flash memory bank. The WE# signal has to be used with Software Data Protection (SDP) command sequence when controlling the Erase and Program operations in the flash memory bank. The SDP command sequence protects the data stored in the flash memory bank from accidental alteration. The SST32HF202/402/802 provide the added functionality of being able to simultaneously read from or write to the SRAM bank while erasing or programming in the flash memory bank. The SRAM memory bank can be read or written while the flash memory bank performs SectorErase, Bank-Erase, or Word-Program concurrently. All flash memory Erase and Program operations will automatically latch the input address and data signals and complete the operation in background without further input stimulus requirement. Once the internally controlled Erase or Program cycle in the flash bank has commenced, the SRAM bank can be accessed for Read or Write. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF and ComboMemory are trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet SRAM Read The SST32HF202/402/802 devices are suited for applications that use both flash memory and SRAM memory to store code or data. For systems requiring low power and small form factor, the SST32HF202/402/802 devices significantly improve performance and reliability, while lowering power consumption, when compared with multiple chip solutions. The SST32HF202/402/802 inherently use less energy during erase and program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SRAM Read operation of the SST32HF202/402/802 is controlled by OE# and BES#, both have to be low with WE# high for the system to obtain data from the outputs. BES# is used for SRAM bank selection. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when OE# is high. See Figure 3 for the Read cycle timing diagram. SRAM Write The SRAM Write operation of the SST32HF202/402/802 is controlled by WE# and BES#, both have to be low for the system to write to the SRAM. During the Word-Write operation, the addresses and data are referenced to the rising edge of either BES# or WE#, whichever occurs first. The write time is measured from the last falling edge to the first rising edge of BES# or WE#. See Figures 4 and 5 for the Write cycle timing diagrams. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated Erase/Program cycles. Flash Operation With BEF# active, the SST32HF202 operates as 128K x16 flash memory, the SST32HF402 operates as 256K x16 flash memory, and the SST32HF802 operates as 512K x16 flash memory. The flash memory bank is read using the common address lines, data lines, WE# and OE#. Erase and Program operations are initiated with the JEDEC standard SDP command sequences. Address and data are latched during the SDP commands and during the internally-timed Erase and Program operations. Device Operation The ComboMemory uses BES# and BEF# to control operation of either the SRAM or the flash memory bank. When BES# is low, the SRAM Bank is activated for Read and Write operation. When BEF# is low the flash bank is activated for Read, Program or Erase operation. BES# and BEF# cannot be at low level at the same time. If BES# and BEF# are both asserted to low level bus contention will result and the device may suffer permanent damage. All address, data, and control lines are shared by SRAM Bank and flash bank which minimizes power consumption and loading. The device goes into standby when both bank enables are high. Flash Read The Read operation of the SST32HF202/402/802 devices is controlled by BEF# and OE#. Both have to be low, with WE# high, for the system to obtain data from the outputs. BEF# is used for flash memory bank selection. When BEF# and BES# are high, both banks are deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when OE# is high. Refer to Figure 6 for further details. SRAM Operation With BES# low and BEF# high, the SST32HF202/402/802 operate as 128K x16 CMOS SRAM, with fully static operation requiring no external clocks or timing strobes. The SST32HF202/402/802 SRAM is mapped into the first 128 KWord address space. When BES# and BEF# are high, both memory banks are deselected and the device enters standby mode. Read and Write cycle times are equal. The control signals UBS# and LBS# provide access to the upper data byte and lower data byte. See Table 3 for SRAM Read and Write data byte control modes of operation. ©2005 Silicon Storage Technology, Inc. S71209-06-000 2 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Flash Erase/Program Operation SST32HF202, A17-A15, for SST32HF402, and A18-A15, for SST32HF802, are used to determine the block address. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined using either Data# Polling or Toggle Bit methods. See Figures 12 and 13 for timing waveforms. Any commands issued during the Sector- or Block-Erase operation are ignored. SDP commands are used to initiate the flash memory bank Program and Erase operations of the SST32HF202/402/ 802. SDP commands are loaded to the flash memory bank using standard microprocessor Write sequences. A command is loaded by asserting WE# low while keeping BEF# low and OE# high. The address is latched on the falling edge of WE# or BEF#, whichever occurs last. The data is latched on the rising edge of WE# or BEF#, whichever occurs first. Flash Chip-Erase Operation Flash Word-Program Operation The SST32HF202/402/802 provide a Chip-Erase operation, which allows the user to erase the entire memory array to the “1” state. This is useful when the entire device must be quickly erased. The flash memory bank of the SST32HF202/402/802 devices is programmed on a word-by-word basis. Before Program operations, the memory must be erased first. The Program operation consists of three steps. The Chip-Erase operation is initiated by executing a sixbyte command sequence with Chip-Erase command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 10 for timing diagram, and Figure 21 for the flowchart. Any commands issued during the Chip-Erase operation are ignored. The first step is the three-byte load sequence for Software Data Protection. The second step is to load word address and word data. During the Word-Program operation, the addresses are latched on the falling edge of either BEF# or WE#, whichever occurs last. The data is latched on the rising edge of either BEF# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or BEF#, whichever occurs first. The Program operation, once initiated, will be completed, within 20 µs. See Figures 7 and 8 for WE# and BEF# controlled Program operation timing diagrams and Figure 18 for flowcharts. During the Program operation, the only valid flash Read operations are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any SDP commands loaded during the internal Program operation will be ignored. Write Operation Status Detection Flash Sector/Block-Erase Operation The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. The SST32HF202/402/802 provide two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which initiates the internal Program or Erase operation. The Flash Sector/Block-Erase operation allows the system to erase the device on a sector-by-sector (or block-byblock) basis. The SST32HF202/402/802 offer both SectorErase and Block-Erase mode. The sector architecture is based on uniform sector size of 2 KWord. The Block-Erase mode is based on uniform block size of 32 KWord. The Sector-Erase operation is initiated by executing a six-byte command sequence with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The address lines A16-A11, for SST32HF202, A17-A11, for SST32HF402, and A18-A11, for SST32HF802, are used to determine the sector address. The Block-Erase operation is initiated by executing a six-byte command sequence with Block-Erase command (50H) and block address (BA) in the last bus cycle. The address lines A16-A15, for ©2005 Silicon Storage Technology, Inc. S71209-06-000 3 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Flash Data# Polling (DQ7) Flash Software Data Protection (SDP) When the SST32HF202/402/802 flash memory banks are in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. Note that even though DQ7 may have valid data immediately following the completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles, after an interval of 1 µs. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of the fourth WE# (or BEF#) pulse for Program operation. For Sector- or Block-Erase, the Data# Polling is valid after the rising edge of the sixth WE# (or BEF#) pulse. See Figure 9 for Data# Polling timing diagram and Figure 19 for a flowchart. The SST32HF202/402/802 provide the JEDEC approved software data protection scheme for all flash memory bank data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of six-byte load sequence. The SST32HF202/402/802 devices are shipped with the software data protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid SDP commands will abort the device to the Read mode, within Read cycle time (TRC). Concurrent Read and Write Operations The SST32HF202/402/802 provide the unique benefit of being able to read from or write to SRAM, while simultaneously erasing or programming the Flash. This allows data alteration code to be executed from SRAM, while altering the data in Flash. The following table lists all valid states. Flash Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating ‘1’s and ‘0’s, i.e., toggling between 1 and 0. When the internal Program or Erase operation is completed, the toggling will stop. The flash memory bank is then ready for the next operation. The Toggle Bit is valid after the rising edge of the fourth WE# (or BEF#) pulse for Program operation. For Sector- or Bank-Erase, the Toggle Bit is valid after the rising edge of the sixth WE# (or BEF#) pulse. See Figure 10 for Toggle Bit timing diagram and Figure 19 for a flowchart. CONCURRENT READ/WRITE STATE TABLE Flash Program/Erase Program/Erase SRAM Read Write The device will ignore all SDP commands when an Erase or Program operation is in progress. Note that Product Identification commands use SDP; therefore, these commands will also be ignored while an Erase or Program operation is in progress. Flash Memory Data Protection The SST32HF202/402/802 flash memory bank provides both hardware and software features to protect nonvolatile data from inadvertent writes. Flash Hardware Data Protection Noise/Glitch Protection: A WE# or BEF# pulse of less than 5 ns will not initiate a Write cycle. VDD Power Up/Down Detection: The Write operation is inhibited when VDD is less than 1.5V. Write Inhibit Mode: Forcing OE# low, BEF# high, or WE# high will inhibit the Flash Write operation. This prevents inadvertent writes during power-up or power-down. ©2005 Silicon Storage Technology, Inc. S71209-06-000 4 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Product Identification Product Identification Mode Exit/Reset The Product Identification mode identifies the devices as the SST32HF202/402/802 and manufacturer as SST. This mode may be accessed by software operations only. The hardware device ID Read operation, which is typically used by programmers, cannot be used on this device because of the shared lines between flash and SRAM in the multi-chip package. Therefore, application of high voltage to pin A9 may damage this device. Users may use the software Product Identification operation to identify the part (i.e., using the device ID) when using multiple manufacturers in the same socket. For details, see Tables 3 and 4 for software operation, Figure 14 for the software ID entry and Read timing diagram, and Figure 20 for the ID entry command sequence flowchart. In order to return to the standard read mode, the Software Product Identification mode must be exited. Exiting is accomplished by issuing the Exit ID command sequence, which returns the device to the Read operation. Please note that the software reset command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 15 for timing waveform and Figure 20 for a flowchart. Design Considerations SST recommends a high frequency 0.1 µF ceramic capacitor to be placed as close as possible between VDD and VSS, e.g., less than 1 cm away from the VDD pin of the device. Additionally, a low frequency 4.7 µF electrolytic capacitor from VDD to VSS should be placed within 1 cm of the VDD pin. TABLE 1: PRODUCT IDENTIFICATION Address Data 0000H 00BFH SST32HF202 0001H 2789H SST32HF402 0001H 2780H SST32HF802 0001H 2781H Manufacturer’s ID Device ID T1.2 1209 FUNCTIONAL BLOCK DIAGRAM Address Buffers AMS-A0 UBS# LBS# BES# BEF# OE# WE# SRAM Control Logic Address Buffers & Latches I/O Buffers DQ15 - DQ8 DQ7 - DQ0 SuperFlash Memory 1209 B1.0 ©2005 Silicon Storage Technology, Inc. S71209-06-000 5 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 5 4 3 2 TOP VIEW (balls facing down) SST32HF202 SST32HF402 A13 A9 WE# BES# A7 A12 A8 NC NC NC A14 A10 LBS# NC A6 A15 A11 NC NC A5 6 A16 UBS# DQ15 VSS 5 DQ7 DQ14 DQ13 DQ6 DQ5 DQ12 VDD DQ4 DQ2 DQ10 DQ11 DQ3 DQ0 DQ8 DQ9 DQ1 1 A3 A4 A2 A1 A0 A B C D E BEF# OE# VSS F G A13 A12 A14 A15 A16 UBS# DQ15 VSS A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 WE# NC LBS# NC DQ5 DQ12 VDD DQ4 BES# NC NC NC DQ2 DQ10 DQ11 DQ3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A3 A4 A2 A1 A0 A B C D E 4 3 1209 48-lfbga L3K P1a.3 6 TOP VIEW (balls facing down) 2 1 H BEF# OE# VSS F G 1209 48-lfbga L3K P1b.3 Data Sheet H TOP VIEW (balls facing down) 6 5 A13 A12 A14 A15 A16 UBS# DQ15 VSS A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 WE# NC LBS# NC DQ5 DQ12 VDD DQ4 BES# NC A18 NC DQ2 DQ10 DQ11 DQ3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A3 A4 A2 A1 A0 A B C D E 4 3 2 1 BEF# OE# VSS F G 1209 48-lfbga L3K P1c.3 SST32HF802 H FIGURE 1: PIN ASSIGNMENTS FOR 48-BALL LFBGA ©2005 Silicon Storage Technology, Inc. S71209-06-000 6 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TOP VIEW (balls facing down) SST32HF802 6 5 4 BES# VSS DQ1 A1 A2 A4 NC A9 A10 DQ5 DQ2 A0 A3 A7 NC A14 OE# DQ7 DQ4 DQ0 A6 A18 NC A15 A5 A11 A8 DQ3 DQ12 A12 LBS# A13 A17 UBS# BEF# DQ10 VDDF DQ6 DQ15 DQ8 2 1 WE# VDDS A16 VSS DQ9 DQ11 DQ13 DQ14 A B C D E F G H 1209 48-tbga LBK P2.0 3 FIGURE 2: PIN ASSIGNMENTS FOR 48-BALL LBGA (10MM X 12MM) TABLE 2: PIN DESCRIPTION Symbol Pin Name Functions AMS1-A0 Address Inputs To provide flash addresses, A16-A0 for 2M, A17-A0 for 4M, and A18-A0 for 8M. To provide SRAM addresses, A16-A0 for 2M. DQ15-DQ0 Data Input/output To output data during Read cycles and receive input data during Write cycles. Data is internally latched during a flash Erase/Program cycle. The outputs are in tri-state when OE# or BES# and BEF# are high. BES# SRAM Memory Bank Enable To activate the SRAM memory bank when BES# is low. BEF# Flash Memory Bank Enable To activate the Flash memory bank when BEF# is low. OE# Output Enable To gate the data output buffers. WE# Write Enable To control the Write operations. VDD Power Supply 2.7-3.3V power supply (for L3K package only) VDDF2 VDDS2 Power Supply (Flash) 2.7-3.3V power supply to flash only Power Supply (SRAM) 2.7-3.3V power supply to SRAM only VSS Ground UBS# Upper Byte Control (SRAM) To enable DQ15-DQ8 LBS# Lower Byte Control (SRAM) To enable DQ7-DQ0 NC No Connection Unconnected Pins T2.4 1209 1. AMS = Most significant address 2. For SST32HF802 in the LBK package only ©2005 Silicon Storage Technology, Inc. S71209-06-000 7 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TABLE 3: OPERATION MODES SELECTION Mode BES#1 BEF#1 OE# WE# UBS# LBS# DQ15 to DQ8 DQ7 to DQ0 Address VIL VIL X2 X X X X X X Read VIH VIL VIL VIH X X DOUT DOUT AIN Program VIH VIL VIH VIL X X DIN DIN AIN X VIL VIH VIL X X X X Sector or Block address, XXH for Chip-Erase VIL VIH VIL VIH VIL VIL DOUT DOUT AIN VIL VIH VIL VIH VIL VIH DOUT High Z AIN VIL VIH VIL VIH VIH VIL High Z DOUT AIN VIL VIH X VIL VIL VIL DIN DIN AIN VIL VIH X VIL VIL VIH DIN High Z AIN Not Allowed Flash Erase SRAM Read Write Standby Flash Write Inhibit Output Disable VIL VIH X VIL VIH VIL High Z DIN AIN VIHC VIHC X X X X High Z High Z X X X VIL X X X High Z / DOUT High Z / DOUT X X X X VIH X X High Z / DOUT High Z / DOUT X X VIH X X X X High Z / DOUT High Z / DOUT X VIH VIL VIH VIH X X High Z High Z X VIL VIH X X VIH VIH High Z High Z X VIL VIH VIH VIH X X High Z High Z X VIH VIL VIL VIH X X Product Identification Software Mode Manufacturer’s ID (00BFH) Device ID3 AMSF4-A1=VIL, A0=VIH (See Table 4) T3.5 1209 1. 2. 3. 4. Do not apply BES#=VIL and BEF#=VIL at the same time X can be VIL or VIH, but no other value. Device ID for: SST32HF202 = 2789H, SST32HF402 = 2780H, and SST32HF802 = 2781H AMS = Most significant flash address ©2005 Silicon Storage Technology, Inc. S71209-06-000 8 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TABLE 4: SOFTWARE COMMAND SEQUENCE Command Sequence 1st Bus Write Cycle Addr1 Data 2nd Bus Write Cycle Addr1 Data 3rd Bus Write Cycle Addr1 4th Bus Write Cycle Data Addr1 Data Data AAH Word-Program 5555H AAH 2AAAH 55H 5555H A0H WA2 Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H 5th Bus Write Cycle 6th Bus Write Cycle Addr1 Data Addr1 Data 2AAAH 55H SAX3 30H 3 Block-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H BAX Chip-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H Software ID Entry4,5 5555H AAH 2AAAH 55H 5555H 90H Software ID Exit XXH F0H Software ID Exit 5555H AAH 2AAAH 55H 5555H F0H 50H 10H T4.4 1209 1. Address format A14-A0 (Hex),Address A15 can be VIL or VIH, but no other value, for the Command sequence. 2. WA = Program Word address 3. SAX for Sector-Erase; uses AMS-A11 address lines BAX for Block-Erase; uses AMS-A15 address lines AMS = Most significant address AMS = A16 for SST32HF202, A17 for SST32HF402, and A18 for SST32HF802 4. The device does not remain in Software Product ID mode if powered down. 5. With AMS-A1 = 0; SST Manufacturer’s ID = 00BFH, is read with A0 = 0, SST32HF202 Device ID = 2789H, is read with A0 = 1, SST32HF402 Device ID = 2780H, is read with A0 = 1 SST32HF802 Device ID = 2781H, is read with A0 = 1. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +125°C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.3V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA 1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions. Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information. 2. Outputs shorted for no more than one second. No more than one output shorted at a time. OPERATING RANGE Range Commercial Extended AC CONDITIONS OF TEST Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns Ambient Temp VDD 0°C to +70°C 2.7-3.3V Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF -20°C to +85°C 2.7-3.3V See Figures 16 and 17 ©2005 Silicon Storage Technology, Inc. S71209-06-000 9 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TABLE 5: DC OPERATING CHARACTERISTICS (VDD = VDDF AND VDDS = 2.7-3.3V) Limits Symbol Parameter IDD Power Supply Current Min Max Address input=VILT/VIHT, at f=5 MHz, VDD=VDD Max, all DQs open Read Test Conditions Flash 30 mA OE#=VIL, WE#=VIH BEF#=VIL, BES#=VIH SRAM 30 mA BEF#=VIH, BES#=VIL 55 mA BEF#=VIH, BES#=VIL 30 mA WE#=VIL BEF#=VIL, BES#=VIH, OE#=VIH 30 mA BEF#=VIH, BES#=VIL Concurrent Operation Write Flash SRAM ISB Units Standby VDD Current SST32HF202/402 30 µA VDD=VDD Max, BEF#=BES#=VIHC SST32HF802 40 µA VDD=VDD Max, BEF#=BES#=VIHC ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max 0.8 V VDD=VDD Min V VDD=VDD Max VIL Input Low Voltage VIH Input High Voltage 0.7 VDD VIHC Input High Voltage (CMOS) VDD-0.3 VOLF Flash Output Low Voltage VOHF Flash Output High Voltage VOLS Output Low Voltage VOHS Output High Voltage V VDD=VDD Max 0.2 V IOL=100 µA, VDD=VDD Min V IOH=-100 µA, VDD=VDD Min 0.4 V IOL=1 mA, VDD=VDD Min V IOH=-500 µA, VDD=VDD Min VDD-0.2 2.2 T5.7 1209 TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 Power-up to Read Operation 100 µs Power-up to Program/Erase Operation 100 µs TPU-WRITE 1 T6.0 1209 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 7: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open) Parameter CI/O 1 CIN1 Description Test Condition Maximum I/O Pin Capacitance VI/O = 0V 24 pF Input Capacitance VIN = 0V 12 pF T7.0 1209 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 8: FLASH RELIABILITY CHARACTERISTICS Symbol NEND 1 Parameter Minimum Specification Units Endurance 10,000 Cycles JEDEC Standard A117 100 Years JEDEC Standard A103 100 + IDD mA TDR1 Data Retention ILTH1 Latch Up Test Method JEDEC Standard 78 T8.0 1209 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. ©2005 Silicon Storage Technology, Inc. S71209-06-000 10 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet AC CHARACTERISTICS TABLE 9: SRAM READ CYCLE TIMING PARAMETERS Symbol Parameter TRCS Read Cycle Time TAAS Address Access Time TBES Bank Enable Access Time 70 ns TOES Output Enable Access Time 35 ns TBYES UBS#, LBS# Access Time TBLZS1 BES# to Active Output 0 ns TOLZS1 Output Enable to Active Output 0 ns TBYLZS1 UBS#, LBS# to Active Output 0 ns TBHZS 1 TOHZS1 Min 70 70 Output Disable to High-Z Output UBS#, LBS# to High-Z Output TOHS Output Hold from Address Change 0 Units ns 70 BES# to High-Z Output TBYHZS1 Max ns ns 25 ns 25 ns 35 10 ns ns T9.3 1209 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 10: SRAM WRITE CYCLE TIMING PARAMETERS Symbol Parameter Min TWCS Write Cycle Time 70 Max Units TBWS Bank Enable to End-of-Write 60 ns TAWS Address Valid to End-of-Write 60 ns TASTS Address Set-up Time 0 ns TWPS Write Pulse Width 60 ns TWRS Write Recovery Time 0 ns TBYWS UBS#, LBS# to End-of-Write 60 ns TODWS Output Disable from WE# Low TOEWS Output Enable from WE# High 0 ns TDSS Data Set-up Time 30 ns TDHS Data Hold from Write Time 0 ns 30 ns ns T10.3 1209 ©2005 Silicon Storage Technology, Inc. S71209-06-000 11 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TABLE 11: FLASH READ CYCLE TIMING PARAMETERS Symbol Parameter Min TRC Read Cycle Time 70 TBE Bank Enable Access Time 70 ns TAA Address Access Time 70 ns TOE Output Enable Access Time TBLZ1 BEF# Low to Active Output 0 TOLZ1 OE# Low to Active Output 0 TBHZ1 BEF# High to High-Z Output TOHZ1 OE# High to High-Z Output TOH1 Output Hold from Address Change Max Units ns 35 ns ns ns 20 ns 20 ns 0 ns T11.2 1209 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 12: FLASH PROGRAM/ERASE CYCLE TIMING PARAMETERS Symbol Parameter Min Max Units TBP Word-Program Time TAS Address Setup Time 0 TAH Address Hold Time 30 ns TBS WE# and BEF# Setup Time 0 ns TBH WE# and BEF# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TBPW BEF# Pulse Width 40 ns TWP WE# Pulse Width 40 ns TWPH WE# Pulse Width High 30 ns TBPH BEF# Pulse Width High 30 ns TDS Data Setup Time 30 ns TDH Data Hold Time 0 TIDA Software ID Access and Exit Time 150 ns 20 µs ns ns TSE Sector-Erase 25 ms TBE Block-Erase 25 ms TSCE Chip-Erase 100 ms T12.0 1209 ©2005 Silicon Storage Technology, Inc. S71209-06-000 12 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TRCS ADDRESSES AMSS-0 TOHS TAAS TBES BES# TBLZS TBHZS TOES OE# TOLZS TOHZS TBYES UBS#, LBS# TBYLZS TBYHZS DATA VALID DQ15-0 1209 F02.0 Note: WE# remains High (VIH) for the Read cycle AMSS = Most Significant SRAM Address FIGURE 3: SRAM READ CYCLE TIMING DIAGRAM TWCS ADDRESSES AMSS-0 TASTS TWPS TWRS WE# TAWS TBWS BES# TBYWS UBS#, LBS# TOEWS TODWS DQ15-8, DQ7-0 TDSS TDHS VALID DATA IN NOTE 2 NOTE 2 1209 F03.1 Notes: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance. 2. If BES# goes Low coincident with or after WE# goes Low, the output will remain at high impedance. If BES# goes High coincident with or before WE# goes High, the output will remain at high impedance. Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied. FIGURE 4: SRAM WRITE CYCLE TIMING DIAGRAM (WE# CONTROLLED)1 ©2005 Silicon Storage Technology, Inc. S71209-06-000 13 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TWCS ADDRESSES AMSS-0 TWPS TWRS WE# TBWS BES# TAWS TASTS TBYWS UBS#, LBS# TDSS DQ15-8, DQ7-0 NOTE 2 TDHS VALID DATA IN NOTE 2 1209 F04.0 Notes: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance. 2. Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied. FIGURE 5: SRAM WRITE CYCLE TIMING DIAGRAM (UBS#, LBS# CONTROLLED)1 TAA TRC ADDRESSES AMSF-0 TBE BEF# TOE OE# VIH TOHZ TOLZ WE# DQ15-0 HIGH-Z TOH TBLZ DATA VALID TBHZ HIGH-Z DATA VALID 1209 F05.0 AMSF = Most Significant Flash Address FIGURE 6: FLASH READ CYCLE TIMING DIAGRAM ©2005 Silicon Storage Technology, Inc. S71209-06-000 14 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet INTERNAL PROGRAM OPERATION STARTS TBP 5555 TAH ADDRESSES AMSF-0 2AAA 5555 ADDR TDH TWP WE# TAS TDS TWPH OE# TCH BEF# TCS DQ15-0 XXAA XX55 XXA0 DATA SW0 SW1 SW2 WORD (ADDR/DATA) 1209 F06.0 AMSF = Most Significant Flash Address Note: X can be VIL or VIH, but no other value FIGURE 7: FLASH WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM INTERNAL PROGRAM OPERATION STARTS TBP 5555 TAH ADDRESSES AMSF-0 2AAA 5555 ADDR TDH TCP BEF# TAS TDS TCPH OE# TCH WE# TCS DQ15-0 XXAA XX55 XXA0 DATA SW0 SW1 SW2 WORD (ADDR/DATA) AMSF = Most Significant Flash Address Note: X can be VIL or VIH, but no other value 1209 F07.0 FIGURE 8: BEF# CONTROLLED FLASH PROGRAM CYCLE TIMING DIAGRAM ©2005 Silicon Storage Technology, Inc. S71209-06-000 15 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet ADDRESSES AMSF-0 TCE BEF# TOES TOEH OE# TOE WE# DQ7 Data Data# Data# Data 1209 F08.0 AMSF = Most Significant Flash Address FIGURE 9: FLASH DATA# POLLING TIMING DIAGRAM ADDRESSES AMSF-0 TBE BEF# TOEH TOES TOE OE# WE# DQ6 TWO READ CYCLES WITH SAME OUTPUTS AMSF = Most Significant Flash Address 1209 F09.0 FIGURE 10: FLASH TOGGLE BIT TIMING DIAGRAM ©2005 Silicon Storage Technology, Inc. S71209-06-000 16 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TSCE SIX-BYTE CODE FOR CHIP-ERASE 5555 ADDRESS AMSF-0 2AAA 5555 5555 2AAA 5555 CE# OE# TWP WE# DQ15-0 XXAA XX55 XX80 XXAA XX55 XX10 SW0 SW1 SW2 SW3 SW4 SW5 1209 F10.0 Note: This device also supports CE# controlled Chip-Erase operation. The WE# and CE# signals are interchageable as long as minimum timings are met. (See Table 12) X can be VIL or VIH, but no other value AMSF = Most Significant Flash Address FIGURE 11: WE# CONTROLLED FLASH CHIP-ERASE TIMING DIAGRAM TSE SIX-WORD CODE FOR SECTOR-ERASE ADDRESSES AMSF-0 5555 2AAA 5555 5555 2AAA SAX BEF# OE# TWP WE# DQ15-0 XXAA SW0 XX55 SW1 XX80 XXAA XX55 XX30 SW2 SW3 SW4 SW5 1209 F11.0 Note: The device also supports BEF# controlled Sector-Erase operation. The WE# and BEF# signals are interchangeable as long as minimum timings are met. (See Table 12) X can be VIL or VIH, but no other value SAX = Sector Address AMSF = Most Significant Flash Address FIGURE 12: WE# CONTROLLED FLASH SECTOR-ERASE TIMING DIAGRAM ©2005 Silicon Storage Technology, Inc. S71209-06-000 17 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TBE SIX-WORD CODE FOR BLOCK-ERASE 5555 ADDRESSES AMSF-0 2AAA 5555 5555 2AAA BAX BEF# OE# TWP WE# DQ15-0 Note: XXAA XX55 XX80 XXAA XX55 XX50 SW0 SW1 SW2 SW3 SW4 SW5 1209 F12.1 The device also supports BEF# controlled Block-Erase operation. The WE# and BEF# signals are interchangeable as long as minimum timings are met. (See Table 12) X can be VIL or VIH, but no other value BAX = Block Address AMSF = Most Significant Flash Address FIGURE 13: WE# CONTROLLED FLASH BLOCK-ERASE TIMING DIAGRAM THREE-WORD SEQUENCE FOR SOFTWARE ID ENTRY 5555 ADDRESS A14-0 2AAA 5555 0000 0001 BEF# OE# TIDA TWP WE# TWPH DQ15-0 TAA XXAA XX55 XX90 00BF SW0 SW1 SW2 MFG ID DEVICE ID 1209 F13.4 Note: X can be VIL or VIH, but no other value Device ID = 2789H for SST32HF202, 2780H for SST32HF402, 2781H for SST32HF802 FIGURE 14: SOFTWARE ID ENTRY AND READ ©2005 Silicon Storage Technology, Inc. S71209-06-000 18 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet THREE-WORD SEQUENCE FOR SOFTWARE ID EXIT AND RESET 5555 ADDRESS A14-0 DQ15-0 XXAA 2AAA 5555 XX55 XXF0 TIDA BEF# OE# TWP WE# T WHP SW0 SW1 SW2 1209 F14.0 Note: X can be VIL or VIH, but no other value FIGURE 15: SOFTWARE ID EXIT AND RESET ©2005 Silicon Storage Technology, Inc. S71209-06-000 19 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet VIHT INPUT VIT REFERENCE POINTS VOT OUTPUT VILT 1209 F15.0 AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns. Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test FIGURE 16: AC INPUT/OUTPUT REFERENCE WAVEFORMS TO TESTER TO DUT CL 1209 F16.0 FIGURE 17: A TEST LOAD EXAMPLE ©2005 Silicon Storage Technology, Inc. S71209-06-000 20 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Start Write data: XXAAH Address: 5555H Write data: XX55H Address: 2AAAH Write data: XXA0H Address: 5555H Write Word Address/Word Data Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed 1209 F17.0 X can be VIL or VIH, but no other value. FIGURE 18: WORD-PROGRAM ALGORITHM ©2005 Silicon Storage Technology, Inc. S71209-06-000 21 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Internal Timer Toggle Bit Data# Polling Program/Erase Initiated Program/Erase Initiated Program/Erase Initiated Read word Read DQ7 Wait TBP, TSCE, or TBE Read same word Program/Erase Completed No Is DQ7 = true data? Yes No Does DQ6 match? Program/Erase Completed Yes Program/Erase Completed 1209 F18.0 FIGURE 19: WAIT OPTIONS ©2005 Silicon Storage Technology, Inc. S71209-06-000 22 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Software Product ID Exit & Reset Command Sequence Software Product ID Entry Command Sequence Write data: XXAAH Address: 5555H Write data: XXAAH Address: 5555H Write data: XXF0H Address: XXXXH Write data: XX55H Address: 2AAAH Write data: XX55H Address: 2AAAH Wait TIDA Write data: XX90H Address: 5555H Write data: XXF0H Address: 5555H Return to normal operation Wait TIDA Wait TIDA Read Software ID Return to normal operation 1209 F19.0 X can be VIL or VIH, but no other value. FIGURE 20: SOFTWARE PRODUCT COMMAND FLOWCHARTS ©2005 Silicon Storage Technology, Inc. S71209-06-000 23 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Chip-Erase Command Sequence Sector-Erase Command Sequence Block-Erase Command Sequence Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX80H Address: 5555H Load data: XX80H Address: 5555H Load data: XX80H Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XXAAH Address: 5555H Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX55H Address: 2AAAH Load data: XX10H Address: 5555H Load data: XX30H Address: SAX Load data: XX50H Address: BAX Wait TSCE Wait TSE Wait TBE Chip erased to FFFFH Sector erased to FFFFH Block erased to FFFFH 1209 F20.0 X can be VIL or VIH, but no other value. FIGURE 21: ERASE COMMAND SEQUENCE ©2005 Silicon Storage Technology, Inc. S71209-06-000 24 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Concurrent Operation Load SDP Command Sequence Flash Program/Erase Initiated Wait for End of Write Indication Read or Write SRAM End Wait Flash Operation Completed End Concurrent Operation 1209 F21.0 FIGURE 22: CONCURRENT OPERATION FLOWCHART ©2005 Silicon Storage Technology, Inc. S71209-06-000 25 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet PRODUCT ORDERING INFORMATION Device SST32HFxxx Speed - XXX Suffix1 - XX Suffix2 - XXXX Package Attribute E1 = non-Pb Package Modifier K = 48 balls Package Type L3 = LFBGA (6mm x 8mm x 1.4mm) LB = LBGA (10mm x 12mm x 1.4mm) Temperature Range C = Commercial = 0°C to +70°C E = Extended = -20°C to +85°C Minimum Endurance 4 = 10,000 cycles Read Access Speed 70 = 70 ns SRAM 2 = 2 Mbit SRAM Density 20 = 2 Mbit Flash 40 = 4 Mbit Flash 80 = 8 Mbit Flash Voltage H = 2.7-3.3V Product Series 32 = MPF + SRAM ComboMemory 1. Environmental suffix “E” denotes non-Pb solder. SST non-Pb solder devices are “RoHS Compliant”. ©2005 Silicon Storage Technology, Inc. S71209-06-000 26 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet Valid combinations for SST32HF202 SST32HF202-70-4C-L3K SST32HF202-70-4C-L3KE SST32HF202-70-4E-L3K SST32HF202-70-4E-L3KE Valid combinations for SST32HF402 SST32HF402-70-4C-L3K SST32HF402-70-4C-L3KE SST32HF402-70-4E-L3K SST32HF402-70-4E-L3KE Valid combinations for SST32HF802 SST32HF802-70-4C-L3K SST32HF802-70-4C-LBK SST32HF802-70-4C-L3KE SST32HF802-70-4C-LBKE SST32HF802-70-4E-L3K SST32HF802-70-4E-LBK SST32HF802-70-4E-L3KE SST32HF802-70-4E-LBKE Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. ©2005 Silicon Storage Technology, Inc. S71209-06-000 27 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet PACKAGING DIAGRAMS TOP VIEW BOTTOM VIEW 8.00 ± 0.20 5.60 0.45 ± 0.05 (48X) 0.80 6 6 5 5 4.00 4 4 6.00 ± 0.20 3 3 2 2 1 1 0.80 H G F E D C B A A B C D E F G H A1 CORNER SIDE VIEW A1 CORNER 1.30 ± 0.10 0.12 SEATING PLANE 1mm 0.35 ± 0.05 Note: 1. Except for total height dimension, complies with JEDEC Publication 95, MO-210, variant 'AB-1', although some dimensions may be more stringent. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.12 mm 4. Ball opening size is 0.38 mm (± 0.05 mm) 48-lfbga-L3K-6x8-450mic-5 48-BALL LOW-PROFILE, FINE-PITCH BALL GRID ARRAY (LFBGA) 6MM X 8MM SST PACKAGE CODE: L3K ©2005 Silicon Storage Technology, Inc. S71209-06-000 28 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TOP VIEW BOTTOM VIEW 12.00 ± 0.20 7.0 1.0 6 6 5 5 5.0 4 4 10.00 ± 0.20 3 3 2 2 1 1 1.0 0.50 ± 0.05 (48X) A B C D E F G H H G F E D C B A A1 CORNER A1 CORNER SIDE VIEW 1.4 Max 0.12 SEATING PLANE 1mm 0.40 ± 0.05 Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered. 2. All linear dimensions are in millimeters. 3. Coplanarity: 0.12 mm 4. Ball opening size is 0.4 mm (± 0.05 mm) 48-lbga-LBK-10x12-500mic-2 48-BALL LOW-PROFILE BALL GRID ARRAY (LBGA) 10MM X 12MM SST PACKAGE CODE: LBK ©2005 Silicon Storage Technology, Inc. S71209-06-000 29 5/05 Multi-Purpose Flash (MPF) + SRAM ComboMemory SST32HF202 / SST32HF402 / SST32HF802 Data Sheet TABLE 13: REVISION HISTORY Number Description Date 00 • 2002 Data Book Feb 2002 01 • Document Control Release (SST Internal): No technical changes Apr 2002 02 • Removed the 1 Mbit SRAM devices Apr 2002 03 • • • • 04 • Removed all MPNs for 0 Mbit SRAM parts and 90 ns parts (See page 27) Sep 2003 05 • • 2004 Data Book Updated L3K and LBK package diagrams Nov 2003 06 • Changed IDD test condition for frequency specification from 1/TRC Min to 5 MHz See Table 5 on page 10 Added RoHS compliance information on page 1 and in the “Product Ordering Information” on page 26 Added the solder reflow temperature to the “Absolute Maximum Stress Ratings” on page 9. May 2005 • • Added the 0 Mbit SRAM parts Migrated the 8 Mbit parts from S71171 to S71209 Added L3K package for 8 Mb parts Changes to Table 5 on page 10 – IDD active Read and Write current increased to 30 mA for SRAM and Flash – Test Conditions for Power Supply Current corrected – IDD active Concurrent Operation increased to 55 mA – ISB Standby current decreased to 40 µA on SST32HF802 – Output leakage current increased to 10 µA Mar 2003 Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036 www.SuperFlash.com or www.sst.com ©2005 Silicon Storage Technology, Inc. S71209-06-000 30 5/05