HITACHI 2SK176

2SK1761
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
G
S
2SK1761
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
12
A
48
A
12
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
75
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK1761
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.23
0.35
Ω
ID = 6 A
VGS = 10 V*1
Forward transfer admittance
|yfs|
5.0
8.0
—
S
ID = 6 A
VDS = 10 V*1
Input capacitance
Ciss
—
1100
—
pF
VDS = 10 V
Output capacitance
Coss
—
440
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
68
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
20
—
ns
ID = 6 A
Rise time
tr
—
65
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
100
—
ns
RL = 5 Ω
Fall time
tf
—
44
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I F = 12 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
200
—
ns
I F = 12 A, VGS = 0,
diF / dt = 100 A / µs
Note
1. Pulse Test
3
2SK1761
Maximum Safe Operation Area
Power vs. Temperature Derating
100
160
10
µ
30
s
10
10
s
s
(1
n
tio
ra
pe
3
sh
ot
)
c
(T
=
Ta = 25°C
1
µs
m
m
O
Drain Current I D (A)
=
C
80
10
1
D
°C
25
)
Channel Dissipation
Pch (W)
0
120
PW
40
0.3
0.1
1
0
50
100
Case Temperature
150
Tc (°C)
Operation in this area
is limited by R DS (on)
10
3
30
100
300
1000
200
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
Typical Output Characteristics
10
20
10 V
6V
Pulse Test
8
5.5 V
Drain Current I D (A)
Drain Current I D (A)
16
12
5V
8
V DS = 10 V
Pulse Test
6
Tc = 75°C
25°C
4
– 25°C
4.5 V
2
4
V GS = 4 V
0
4
4
8
12
16
Drain to Source Voltage V DS (V)
20
0
2
4
6
8
Gate to Source Voltage V GS (V)
10
2SK1761
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
5
Pulse Test
4
2
Static Drain–Source on State
Resistance R DS (on) (Ω )
Drain to Source Saturation Voltage
VDS (on) (V)
Pulse Test
3
10 A
2
5A
1
1
0.5
0.2
15 V
0.1
ID = 2 A
0
4
8
20
16
12
V GS = 10 V
0.05
0.5
1
Gate to Source Voltage V GS (V)
10
20
50
Forward Transfer Admittance
vs. Drain Current
1.0
50
V DS = 10 V
Pulse Test
Pulse Test
V GS = 10 V
Forward Transfer Admittance
|y fs| (S)
Static Drain–Source on State
Resistance R DS (on) (Ω )
5
Drain Current I D (A)
Static Drain to Source on State
Resistance vs. Temperature
0.8
2
0.6
I D = 10 A
0.4
5A
2A
0.2
20
Tc = –25°C
10
5
75°C
25°C
2
1
0
– 40
0
40
80
120
Case Temperature Tc (°C)
160
0.5
0.1
0.2
0.5
1
2
5
10
Drain Current I D (A)
5
2SK1761
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs. Drain
to Source Voltage
500
10000
V GS = 0
f = 1 MHz
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
di / dt = 100 A / µ s
V GS = 0, Ta = 25°C
100
50
20
Ciss
1000
Coss
100
10
Crss
5
0.2
0.5
1
2
5
10
10
0
20
Reverse Drain Current I DR (A)
Dynamic Input Characteristics
16
400
V GS
300
12
V DD = 200 V
100 V
50 V
100
8
4
V DD = 200 V
100 V
50 V
8
16
24
Gate Charge Qg (nc)
6
50
.
V GS = 10 V,V DD =. 30 V
PW = 2 µs, duty 1 %
200
td (off)
100
50
tf
tr
td (on)
20
10
0
0
40
500
Switching Time t (ns)
I D = 12 A
V DS
30
Switching Characteristics
20
Gate to Source Voltage V GS (V)
Drain to Source Voltage V DS (V)
500
200
20
10
Drain to Source Voltage V DS (V)
32
40
0
5
0.1
0.2
0.5
1
2
Drain Current I D (A)
5
10
2SK1761
Reverse Drain Current vs. Source
to Drain Voltage
20
Reverse Drain Current IDR (A)
Pulse Test
16
12
8
4
V GS = 10 V
0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
Tc = 25°C
0.5
0.3
0.2
0.1
0.1 0.05
0.02
hot
θ ch – c(t) = γ s(t) . θ ch – c
θ ch – c = 1.67°C / W, Tc = 25°C
PW
D= T
P DM
lse
Pu
1s
0.03
0.01
0.01
10 µ
T
100 µ
1m
10 m
100 m
PW
1
10
Pulse Width PW (S)
7
Unit: mm
11.5 MAX
2.79 ± 0.2
10.16 ± 0.2
9.5
φ 3.6 -0.08
+0.1
1.26 ± 0.15
15.0 ± 0.3
6.4
18.5 ± 0.5
1.27
+0.2
–0.1
8.0
4.44 ± 0.2
7.8 ± 0.5
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
14.0 ± 0.5
2.7 MAX
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220AB
Conforms
Conforms
1.8 g
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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