HITACHI 2SK1947

2SK1947
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low Drive Current
Built-In Fast Recovery Diode (trr = 140 ns)
Suitable for Switching regulator, Motor Control
Outline
TO-3PL
D
G
1
S
2
3
1. Gate
2. Drain
(Flange)
3. Source
2SK1947
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
50
A
200
A
50
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
Channel dissipation
Pch*
200
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
2
2SK1947
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.047
0.06
Ω
I D = 25 A
VGS = 10 V*1
Forward transfer admittance
|yfs|
20
30
—
S
I D = 25 A
VDS = 10 V*1
Input capacitance
Ciss
—
5810
—
pF
VDS = 10 V
Output capacitance
Coss
—
2360
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
270
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
75
—
ns
I D = 25 A
Rise time
tr
—
270
—
ns
VGS = 10 V
Turn-off delay time
t d(off)
—
420
—
ns
RL = 1.2 Ω
Fall time
tf
—
200
—
ns
Body to drain diode forward
voltage
VDF
—
1.2
—
V
I F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
140
—
ns
I F = 50 A, VGS = 0,
diF / dt = 100 A / µs
Note
1. Pulse Test
3
2SK1947
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
300
Drain Current I D (A)
Channel Dissipation Pch (W)
300
200
100
100
10
µs
0µ
s
10
PW
DC
1m
Op
=
s
era 10
ms
tio
n(
(1
T
sh
Operation in this c =
o
2
5
area is limited
°C t)
)
30
10
3 by R DS (on)
1
0.3
Ta = 25°C
0.1
50
0
100
150
1
100 300
1000
50
10 V
8V
80
6V
60
Drain Current I D ( A )
Drain Current I D (A)
30
Typical Transfer Characteristics
Typical Output Characteristics
100
5.5 V
40
5V
20
4
8
12
40
16
20
VDS = 10 V
Pulse Test
30
20
10
4V
VGS = 3.5 V
Drain to Source Voltage V DS (V)
4
10
Drain to Source Voltage V DS (V)
Case Temperature Tc (°C)
0
3
0
Tc = 25°C
75°C
2
–25°C
4
6
8
Gate to Source Voltage V GS (V)
10
2SK1947
Static Drain to Source on State
Resistance vs. Drain Current
5
0.5
Pulse Test
Static Drain to Source on State
Resistance R DS (on) ( Ω)
Drain to Source Saturation Voltage
V DS (on) (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
4
3
50 A
2
20 A
1
I D = 10 A
Pulse Test
0.2
0.1
VGS = 10 V
0.05
0.02
0.01
0.005
0
4
8
12
20
16
5
2
Gate to Source Voltage V GS (V)
Forward Transfer Admittance
| yfs | (S)
Static Drain to Source on State
Resistance R DS (on) ( Ω )
50
100 200
100
0.20
Pulse Test
VGS = 10 V
0.12
I D = 50 A
0.08
10 A, 20 A
0.04
0
–40
20
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperature
0.16
10
Drain Current I D (A)
0
40
80
120
Case Temperature Tc (°C)
160
50
Pulse Test
V DS = 10 V
Tc = 25°C
20
–25°C
75°C
10
5
2
1
0.5
1
2
5
10
20
50
Drain Current I D (A)
5
2SK1947
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
10000
di/dt = 100 A/µs
V GS = 0, Ta = 25°C
200
Capacitance C (pF)
Reverse Recovery Time t rr (ns)
500
100
50
20
Ciss
Coss
1000
Crss
100
VGS = 0
f = 1 MHz
10
5
10
1
2
5
10
20
50
100
0
Reverse Drain Current I DR (A)
16
ID = 50 A
100
0
8
VDD = 200 V
100 V
50 V
80
160
240
4
320
Gate Charge Qg (nc)
6
12
VDS
200
50
0
400
td(off)
500
Switching Time t (ns)
VGS
300
40
Switching Characteristics
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
400
30
1000
20
VDD = 200 V
100 V
50 V
20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
500
10
tr
tf
200
t d(on)
100
50
20
10
0.5
VGS = 10 V, VDD =
: 30 V
PW = 2 µ s, duty <
= 1%
1
2
5
10
20
Drain Current I D (A)
50
2SK1947
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
50
Pulse Test
40
30
20
VGS = 10 V
0, –5 V
10
0
0.4
0.8
1.2
2.0
1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
TC = 25°C
D=1
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 0.625°C/W, TC = 25°C
0.1
0.1
0.03
0.05
PDM
0.02
0.01
ot
1 Sh
0.01
10 µ
e
Puls
100 µ
T
1m
10 m
Pulse Width PW (s)
100 m
PW
1
D = PW
T
10
7
2SK1947
Switching Time Test Circuit
Waveforms
Vin Monitor
90%
Vout Monitor
D.U.T.
Vin
RL
Vin
10 V
50 Ω
Vout
VDD
10%
10%
.
=. 30 V
90%
td (on)
8
10%
tr
90%
td (off)
tf
5.0 ± 0.2
20.0 ± 0.3
φ3.3 ± 0.2
20.0 ± 0.6
2.5 ± 0.3
26.0 ± 0.3
6.0 ± 0.2
Unit: mm
1.4
3.0
2.2
1.2 +0.25
–0.1
5.45 ± 0.5
5.45 ± 0.5
0.6 +0.25
–0.1
2.8 ± 0.2
1.0
3.8
7.4
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3PL
—
—
9.9 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.