HITACHI 2SK1671

2SK1671
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC – DC converter and motor drive
Outline
TO-3P
D
1
G
2
S
3
1. Gate
2. Drain
(Flange)
3. Source
2SK1671
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
250
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
30
A
120
A
30
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
125
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
250
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
250
µA
VDS = 200 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.075
0.095
Ω
I D = 15 A, VGS = 10 V *1
Forward transfer admittance
|yfs|
12
20
—
S
I D = 15 A, VDS = 10 V *1
Input capacitance
Ciss
—
3000
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
1250
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
170
—
pF
Turn-on delay time
t d(on)
—
45
—
ns
I D = 15 A, VGS = 10 V,
Rise time
tr
—
170
—
ns
RL = 2 Ω
Turn-off delay time
t d(off)
—
250
—
ns
Fall time
tf
—
130
—
ns
Body to drain diode forward
voltage
VDF
—
1.0
—
V
I F = 30 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
400
—
ns
I F = 30 A, VGS = 0,
diF/dt = 100 A/µs
Note
2
1. Pulse test
2SK1671
Power vs. Temperature Derating
Maximum Safe Operation Area
1,000
a
are )
s
i
th (on
in R DS
n
10
tio by
10 µs
era ited
p
0µ
O lim
P
s
DC W
1
is
=
m
Op
10
s
er
ati ms
(1
on
Sh
(T
ot
C =
25 )
°C
)
300
Drain Current ID (A)
Channel Dissipation Pch (W)
150
100
50
100
30
10
3
1
0.3
Ta = 25°C
0.1
0
50
100
Case Temperature TC (°C)
150
1
Typical Transfer Characteristics
Typical Output Characteristics
Drain Current ID (A)
40
10 V
50
Pulse Test
8V
6V
40
Drain Current ID (A)
50
5V
30
20
10
0
10
100 300 1,000
3
30
Drain to Source Voltage VDS (V)
4.5 V
VGS = 4 V
4
12
16
8
Drain to Source Voltage VDS (V)
VDS = 10 V
Pulse Test
30
20
10
20
0
TC = 75°C
25°C
–25°C
2
6
8
4
Gate to Source Voltage VGS (V)
10
3
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
2SK1671
5
Pulse Test
4
3
2
ID = 20 A
1
0
10 A
5A
4
12
16
8
Gate to Source Voltage VGS (V)
0.5
0.1
0.02
0.01
0.005
20
1
10 A
0.08
0.04
0
–40
40
0
80
120
Case Temperature TC (°C)
160
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
4
0.12
20 A
ID = 30 A
2
10
5
20
Drain Current ID (A)
50
100
Forward Transfer Admittance
vs. Drain Current
0.2
0.16
VGS = 10, 15 V
0.05
Static Drain to Source on State
Resistance vs. Temperature
VGS = 10 V
Pulse Test
Pulse Test
0.2
50
20
VDS = 10 V
Pulse Test
TC = –25°C
25°C
10
75°C
5
2
1
0.5
0.5
1
5
2
10 20
Drain Current ID (A)
50
2SK1671
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
10,000
Ciss
200
Capacitance C (pF)
Reverse Recovery Time t rr (ns)
500
100
50
20
di/dt = 100 A/µs, VGS = 0
Ta = 25°C, Pulse Test
10
5
0.5
1
2
10 20
5
Reverse Drain Current IDR (A)
200
100
0
12
VDS
8
VDD = 200 V
100 V
50 V
4
ID = 30 A
Pulse Test
40
120
160
80
Gate Charge Qg (nc)
50
500
0
200
td (off)
200
Switching Time t (ns)
300
10
30
40
20
Drain to Source Voltage VDS (V)
Switching Characteristics
16
VGS
Crss
0
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
400
100
10
50
20
VDD = 50V
100 V
200 V
Coss
VGS = 0
f = 1 MHz
Dynamic Input Characteristics
500
1,000
tf
100
tr
td (on)
50
20
10
5
0.5
.
VGS = 10 V, VDD =. 30 V
PW = 2 µs, duty < 1%
1
5
20
10
2
Drain Current ID (A)
50
5
2SK1671
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Dratin Current IDR (A)
50
Pulse Test
40
30
20
VGS = 10 V
10
0, –5 V
0
Normalized Transient Thermal Impedance γS (t)
0
2.0
0.4
0.8
1.2
1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
TC = 25°C
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch–c (t) = γS (t) · θch–c
θch–c = 1.0°C/W, TC = 25°C
PDM
0.02
0.03
e
0.01 t Puls
ho
S
1
0.01
10 µ
T
100 µ
1m
10 m
Pulse Width PW (s)
100 m
PW
D = PW
T
1
Switching Time Test Circuit
10
Waveforms
Vin Monitor
90%
Vout Monitor
Vin
D.U.T
RL
50 Ω
Vin
10 V
Vout
VDD
.
=. 30 V
10%
90%
td (on)
6
10%
tr
10%
90%
td (off)
tf
15.6 ± 0.3
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Unit: mm
4.8 ± 0.2
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
5.45 ± 0.5
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3P
—
Conforms
5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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