HITACHI 2SK1522

2SK1521, 2SK1522
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 120 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3PL
D
G
1
S
2
3
1. Gate
2. Drain
3. Source
2SK1521, 2SK1522
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1521
Symbol
Ratings
Unit
VDSS
450
V
2SK1522
500
Gate to source voltage
VGSS
Drain current
ID
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
2
1
±30
V
50
A
200
A
50
A
Channel dissipation
Pch*
250
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
2
2SK1521, 2SK1522
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SK1521 V(BR)DSS
450
breakdown voltage
2SK1522
500
Typ
Max
Unit
Test conditions
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±25 V, VDS = 0
Zero gate voltage
2SK1521 I DSS
—
—
250
µA
VDS = 360 V, VGS = 0
drain current
2SK1522
Gate to source cutoff voltage
VDS = 400 V, VGS = 0
VGS(off)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Static Drain to source 2SK1521 RDS(on)
—
0.08
0.10
Ω
I D = 25 A, VGS = 10 V *1
on state resistance
—
0.085
0.11
2SK1522
Forward transfer admittance
|yfs|
22
35
—
S
I D = 25 A, VDS = 10 V *1
Input capacitance
Ciss
—
8700
—
pF
VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
2400
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
235
—
pF
Turn-on delay time
t d(on)
—
85
—
ns
I D = 25 A, VGS = 10 V,
Rise time
tr
—
250
—
ns
RL = 1.2 Ω
Turn-off delay time
t d(off)
—
600
—
ns
Fall time
tf
—
250
—
ns
Body to drain diode forward
voltage
VDF
—
1.1
—
V
I F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t rr
—
120
—
ns
I F = 50 A, VGS = 0,
diF/dt = 100 A/µs
Note:
1. Pulse test
3
2SK1521, 2SK1522
Power vs. Temperature Derating
Maximum Safe Operation Area
1,000
300
Drain Current ID (A)
Channel Dissipation Pch (W)
300
200
100
rea
sa
thi S (on)
n
ni RD
tio by
era ited
p
DC
O lim
is
100
30
Op
er
10
3
1
8V
5V
4.5 V
Drain Current ID (A)
Drain Current ID (A)
=
Sh
ot
)
25
2SK1521
2SK1522
3
10
30
100 300 1,000
Drain to Source Voltage VDS (V)
60
40
20
VGS = 4 V
4
1
(T
80
Pulse Test
5.5 V
0
at
ion
s
s(
VDS = 20 V
Pulse Test
6V
60
20
1m
m
100
10 V
40
10
Typical Transfer Characteristics
Typical Output Characteristics
100
80
=
µs
µs
)
0.1
150
0
°C
1
Ta = 25°C
50
100
Case Temperature TC (°C)
10
10
C
0.3
0
PW
4
12
16
8
20
Drain to Source Voltage VDS (V)
TC = 75°C
25°C
–25°C
0
2
6
8
4
10
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
2SK1521, 2SK1522
50 A
Pulse Test
4
3
2
20 A
ID = 10 A
1
0
1
Pulse Test
0.5
0.2
VGS = 10, 15 V
0.1
0.05
0.02
0.01
5
4
12
16
8
20
Gate to Source Voltage VGS (V)
10
0.5
Pulse Test
0.4
0.3
0.2
0.1
0
–40
ID = 50 A
20 A
10 A
0
80
120
40
Case Temperature TC (°C)
500
Forward Transfer Admittance
vs. Drain Current
160
Forward Transfer Admittance yfs (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State
Resistance vs. Temperature
20
50 100 200
Drain Current ID (A)
50
TC = –25°C
20
25°C
75°C
10
5
2
1
VDS = 20 V
Pulse Test
0.5
0.5
1
2
5
10
20
Drain Current ID (A)
50
5
2SK1521, 2SK1522
Typical Capacitance vs.
Drain to Source Voltage
Body to Drain Diode Reverse
Recovery Time
10,000
500
200
Capacitance C (pF)
Reverse Recovery Time trr (ns)
Ciss
100
50
20
10
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
5
0.5
Coss
1,000
100
Crss
VGS = 0
f = 1 MHz
10
1
2
5
10 20
Reverse Drain Current IDR (A)
50
0
20
10
30
40
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
16
250 V
400 V
300
VGS
12
VDS
200
8
ID = 50 A
100
VDD = 400 V
4
250 V
100 V
0
6
80
240
320
160
Gate Charge Qg (nc)
0
400
Switching Time t (ns)
VDD = 100 V
5,000
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
400
Switching Characteristics
20
500
50
.
VGS = 10 V, VDD =. 30 V
PW = 2 µs, duty < 1%
2,000
1,000
td (off)
500
tf
200
tr
td (on)
100
50
0.5
1
2
5
10
20
Drain Current ID (A)
50
2SK1521, 2SK1522
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
100
Pulse Test
80
60
40
20
VGS = 0, –5 V
Normalized Transient Thermal Impedance γS (t)
0
10 V
0.8
2.0
0.4
1.2
1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
TC = 25°C
1
D=1
0.5
0.3
0.2
θch–c (t) = γS (t) · θch–c
θch–c = 0.5°C/W, TC = 25°C
0.1
0.1
0.05
PDM
0.02
0.03 0.01
lse
Pu
hot
T
1S
0.01
10 µ
100 µ
1m
10 m
Pulse Width PW (s)
100 m
Switching Time Test Circuit
PW
D = PW
T
1
10
Waveforms
Vin Monitor
90%
Vout Monitor
D.U.T
Vin
10%
RL
Vout
10%
10%
50 Ω
Vin
10 V
VDD
.
=. 30 V
td (on)
90%
tr
90%
td (off)
tf
7
5.0 ± 0.2
20.0 ± 0.3
φ3.3 ± 0.2
20.0 ± 0.6
2.5 ± 0.3
26.0 ± 0.3
6.0 ± 0.2
Unit: mm
1.4
3.0
2.2
1.2 +0.25
–0.1
5.45 ± 0.5
5.45 ± 0.5
0.6 +0.25
–0.1
2.8 ± 0.2
1.0
3.8
7.4
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-3PL
—
—
9.9 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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