HITACHI 2SK2958(S)

2SK2958(L),2SK2958(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-568B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R DS(on) = 5.5mΩ typ.
• 4V gate drive devices.
• High speed switching
Outline
LDPAK
4
4
D
1
G
1
S
2
3
2
3
1. Gate
2. Drain
3. Source
4. Drain
2SK2958(L),2SK2958(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
75
A
300
A
75
A
100
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
V
I D = 10mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
I G = ±100µA, VDS = 0
Zero gate voltege drain current
I DSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.0
V
I D = 1mA, VDS = 10V
Static drain to source on state
resistance
RDS(on)
—
5.5
7.0
mΩ
I D = 40A, VGS = 10V Note3
Static drain to source on state
resistance
RDS(on)
—
9.0
14.0
mΩ
I D = 40A, VGS = 4V Note3
Forward transfer admittance
|yfs|
35
60
—
S
I D = 40A, VDS = 10V Note3
Input capacitance
Ciss
—
4100
—
pF
VDS = 10V
Output capacitance
Coss
—
2700
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
800
—
pF
f = 1MHz
Turn-on delay time
t d(on)
—
45
—
ns
VGS = 10V, ID = 40A
Rise time
tr
—
430
—
ns
RL = 0.25Ω
Turn-off delay time
t d(off)
—
460
—
ns
Fall time
tf
—
440
—
ns
Body–drain diode forward voltage
VDF
—
1.0
—
V
I F = 75A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
90
—
ns
I F = 75A, VGS = 0
diF/ dt =50A/µs
Note:
2
3. Pulse test
2SK2958(L),2SK2958(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
160
1000
10
I D (A)
120
Drain Current
Channel Dissipation
Pch (W)
300
80
40
100
PW
30
DC
10
3
1
10
µs
0
1 m µs
s
0m
s
=1
(1
Op
sh
e
ot)
(T rati
c = on
25
°C
)
Operation in
this area is
limited by R DS(on)
0.3
0
50
100
150
0.1 Ta = 25°C
3
0.1 0.3
1
10
Drain to Source Voltage V
200
Case Temperature Tc (°C)
30
(V)
DS
100
Typical Output Characteristics
Typical Transfer Characteristics
6V
5V
4V
Pulse Test
3.5 V
60
40
Drain Current
Drain Current
I D (A)
80
VGS = 10 V
100
I D (A)
100
3V
20
80
V DS = 10 V
Pulse Test
60
25°C
40
75°C
20
Tc = –25°C
2.5 V
0
2
4
6
Drain to Source Voltage V
8
DS(V)
10
0
1
2
3
Gate to Source Voltage V
4
5
(V)
GS
3
2SK2958(L),2SK2958(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Pulse Test
0.4
0.3
I D = 50 A
0.2
20 A
0.1
10 A
Drain to Source On State Resistance
R DS(on) (mW)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
50
Pulse Test
20
VGS = 4 V
10
10 V
5
2
1
4
12
4
8
Gate to Source Voltage
16
20
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I D = 50 A
20 A
10 A
12
VGS = 4 V
8
50 A
10, 20 A
4
0
–40
10 V
0
40
80
120
160
Case Temperature Tc (°C)
1
3
10
30
100 300
Drain Current I D (A)
1000
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Static Drain to Source on State Resistance
R DS(on) (mW)
0
500
200
V DS = 10 V
Pulse Test
100
50
Tc = –25 °C
20
25 °C
10
5
2
75 °C
1
0.5
0.1
0.3
1
3
10
30
Drain Current I D (A)
100
2SK2958(L),2SK2958(S)
Body–Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
500
30000
Capacitance C (pF)
100000
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
10000
Crss
300
di / dt = 50 A / µs
V GS = 0, Ta = 25 °C
0
0
12
8
VDD = 25 V
10 V
5V
80
160
240
320
Gate Charge Qg (nc)
4
0
400
V GS (V)
5000
2000
Switching Time t (ns)
10
V DS
16
10
20
30
40
50
Drain to Source Voltage V DS (V)
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
VDD = 5 V
10 V
25 V
30
20
20
V GS
40
VGS = 0
f = 1 MHz
100
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
I D = 75 A
Coss
1000
Dynamic Input Characteristics
50
Ciss
3000
1000
500
200
Switching Characteristics
V GS = 10 V, V DD = 10 V
PW = 5 µs, duty < 1 %
t d(off)
tf
tr
100
50
t d(on)
20
10
5
5 10 20 50 100
0.1 0.2 0.5 1 2
Drain Current I D (A)
5
2SK2958(L),2SK2958(S)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I DR (A)
100
10 V
80
5V
60
V GS = 0, –5 V
40
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
g s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.1
0.03
0.01
10 µ
6
0.2
q ch – c(t) = g s (t) • q ch – c
q ch – c = 1.25 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
100 µ
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
2SK2958(L),2SK2958(S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50W
V DD
= 10 V
Vout
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
2SK2958(L),2SK2958(S)
Package Dimensions
(1.4)
10.2 ± 0.3
4.44 ± 0.2
(1.5)
3.0
+0.3
–0.5
8.6 ± 0.3
10.0 +0.3
–0.5
(1.5)
1.27 ± 0.2
1.2 ± 0.2
0.4 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
L type
1.3 ± 0.2
2.59 ± 0.2
1.27 ± 0.2
0.76 ± 0.1
1.3 ± 0.2
11.3 ± 0.5
4.44 ± 0.2
11.0 ± 0.5
1.2 ± 0.2
0.86 +0.2
–0.1
8.6 ± 0.3
10.0 +0.3
–0.5
(1.5)
10.2 ± 0.3
(1.4)
Unit: mm
2.54 ± 0.5
0.86 +0.2
–0.1
2.54 ± 0.5
0.1
2.59 ± 0.2
0.4 ± 0.1
S type
Hitachi Code
EIAJ
JEDEC
8
+0.2
–0.1
LDPAK
—
—
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