FAIRCHILD FOD3181SV

FOD3181
0.5A Ouput Current, High Speed MOSFET Gate Driver
Optocoupler
Features
Description
■ Guaranteed operating temperature range of -20°C to
The FOD3181 is a 0.5A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
gallium aluminum arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS integrated circuit with a
power stage. The power stage consists of a PMOS pullup and a NMOS pull-down power transistor. It is ideally
suited for high frequency driving of MOSFETs used in
Plasma Display Panels (PDPs), motor control invertor
applications, and high performance DC/DC converters.
■
■
■
■
■
■
■
■
■
+85°C
0.5A minimum peak output current
High speed response: 500ns max propagation delay
over temperature range
Wide VCC operating range: 10V to 20V
5000Vrms, 1 minute isolation
Minimum creepage distance of 7.0mm
Minimum clearance distance of 7.0mm
C-UL, UL and VDE* approved
10kV/µs minimum common mode rejection (CMR) at
VCM = 1,500V
RDS(ON) of 1.5Ω (typ.) offers lower power dissipation
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
Applications
■ Plasma Display Panel
■ High performance DC/DC convertor
■ High performance switch mode power supply
■ High performance uninterruptible power supply
■ Isolated Power MOSFET gate drive
*Requires ‘V’ ordering option
Functional Block Diagram
Package Outlines
FOD3181
NO CONNECTION 1
8 VCC
8
ANODE 2
7 OUTPUT
CATHODE 3
6 OUTPUT
NO CONNECTION 4
5 VEE
1
8
8
1
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
1
www.fairchildsemi.com
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
August 2008
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
-40 to +125
°C
TOPR
Operating Temperature
-20 to +85
°C
Junction Temperature
-20 to +125
°C
TJ
TSOL
Lead Solder Temperature
260 for 10 sec.
°C
IF(AVG)
Average Input Current(1)
25
mA
Minimum Rate of Rise of LED Current
250
ns
Peak Transient Input Current (<1µs pulse width, 300pps)
1.0
A
5
V
IF(tr)
IF(TRAN)
VR
Reverse Input Voltage
IOH(PEAK)
“High” Peak Output Current(2)
1.5
A
IOL(PEAK)
Current(2)
1.5
A
Supply Voltage
-0.5 to 25
V
Output Voltage
VCC – VEE
VO(PEAK)
“Low” Peak Output
0 to VCC
V
PO
Output Power Dissipation(4)
250
mW
PD
Total Power Dissipation(4)
300
mW
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Value
Units
Power Supply
10 to 20
V
IF(ON)
Input Current (ON)
12 to 18
mA
VF(OFF)
Input Voltage (OFF)
VCC – VEE
TOPR
Parameter
Operating Temperature
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
0 to 0.8
V
-20 to +85
°C
www.fairchildsemi.com
2
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings
(TA = -20°C to +70°C)
Symbol Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
IOH
High Level Output Current(2)(3)
VOH = (VCC – VEE – 1V)
0.5
A
IOL
Current(2)(3)
VOL = (VCC – VEE – 1V)
0.5
A
Low Level Output
Output Voltage(5)(6)
VOH
High Level
VOL
Low Level Output Voltage(5)(6)
IO = 100mA
ICCH
High Level Supply Current
Output Open
IF = 7 to 10mA
ICCL
Low Level Supply Current
Output Open
VF = 0 to 0.8V
IFLH
Threshold Input Current Low to High
IO = 0mA, VO > 5V
VFHL
Threshold Input Voltage High to Low IO = 0mA, VO < 0.5V
0.8
Input Forward Voltage
IF = 10mA
1.2
Temperature Coefficient of
Forward Voltage
IF = 10mA
BVR
Input Reverse Breakdown Voltage
IR = 10µA
CIN
Input Capacitance
f = 1MHz, VF = 0V
VF
∆VF / TA
IO = -100mA
VCC – 0.5
V
VEE + 0.5
V
4.8
6.0
mA
5.0
6.0
mA
10
mA
V
1.5
1.8
V
-1.5
mV/°C
5
V
60
pF
Switching Characteristics (TA = -20°C to +70°C)
Over recommended operating conditions unless otherwise specified.
Symbol
Test Conditions
Parameter
Min.
Typ.*
Max.
Unit
tPLH
Propagation Delay Time to High IF = 10mA, Rg = 10Ω, f = 250kHz,
Output Level(7)
Duty Cycle = 50%, Cg = 10nF
50
135
500
ns
tPHL
Propagation Delay Time to Low
Output Level(7)
50
105
500
ns
tr
Rise Time
tf
Fall Time
CL = 10nF, Rg = 10Ω
75
ns
55
ns
| CMH |
Output High Level Common
Mode Transient Immunity(8)(9)
TA = +25°C, If = 7 to 10mA,
VCM = 1.5kV, VCC = 20V
10
kV/µs
| CML |
Output Low Level Common
Mode Transient Immunity(8)(10)
TA = +25°C, Vf = 0V, VCM = 1.5kV,
VCC = 20V
10
kV/µs
Isolation Characteristics (TA = -20°C to +70°C)
Symbol
Parameter
Isolation Voltage(11)(12)
VISO
Withstand
RI-O
Resistance (input to output)(12)
CI-O
Capacitance (input to output)
Test Conditions
Min.
TA = 25°C, R.H. < 50%,
t = 1min., II-O ≤ 20 µA
5000
Typ.*
Max.
Unit
Vrms
VI-O = 500V
1011
Ω
Freq. = 1MHz
1
pF
* All typical values at TA = 25°C
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
www.fairchildsemi.com
3
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Over recommended operating conditions unless otherwise specified.
6.
7.
Maximum pulse width = 1ms, maximum duty cycle = 20%.
tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input
pulse to the 50% level of the rising edge of the VO signal.
8.
9.
Pin 1 and 4 need to be connected to LED common.
Common mode transient immunity in the high state is the maximum tolerable dVCM /dt of the common mode pulse
VCM to assure that the output will remain in the high state (i.e. VO > 10.0V).
10. Common mode transient immunity in a low state is the maximum tolerable dVCM /dt of the common mode pulse,
VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V).
11. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms,
60Hz for 1 second (leakage detection current limit II-O < 5µA).
12. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted
together.
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
www.fairchildsemi.com
4
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Notes:
1. Derate linearly above +70°C free air temperature at a rate of 0.3mA/°C.
2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 0.5Ω,
frequency = 8kHz, 50% DF.
3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 40Ω,
frequency = 8kHz, 50% DF.
4. No derating required across operating temperature range.
5. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VCC
as IOH approaches zero amps.
Fig. 2 Low To High Input Current Threshold
vs. Ambient Temperature
Fig. 1 Input Forward Current vs. Forward Voltage
6
IFLH – LOW TO HIGH INPUT CURRENT
THRESHOLD (mA)
I F – FORWARD CURRENT (mA)
100
10
TA = -40°C
TA = 100°C
1
TA = 25°C
0.1
0.01
V = 10 to 20V
CC
VEE = 0
Output = Open
5
4
3
2
1
0
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-40
2.2
-20
Fig. 3 Output Low Voltage vs. Ambient Temperature
(VOH - VCC) – HIGH OUTPUT VOLTAGE DROP (V)
V OL – OUTPUT LOW VOLTAGE (V)
VF(OFF) = -3.0V to 0.8V
IOUT = 100mA
V = 10V to 20V
CC
VEE = 0
0.20
0.15
0.10
0.05
0.00
-40
-20
0
20
40
60
40
60
80
100
80
0.00
V
CC
= 10 to 20V, VEE = 0
IF = 10mA to 16mA
IOUT = -100 mA
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
100
-40
-20
TA – AMBIENT TEMPERATURE (°C)
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 Supply Current vs. Ambient Temperature
Fig. 6 Supply Current vs. Supply Voltage
6.2
6.2
V
CC
= 20V, VEE = 0
IF = 10mA (for ICCH)
IF = 0mA (for ICCL)
IF = 10mA (for ICCH)
IF = 0mA (for ICCL)
5.8
I CC – SUPPLY CURRENT (mA)
5.8
I CC – SUPPLY CURRENT (mA)
20
Fig. 4 High Output Voltage Drop vs. Ambient Temperature
0.30
0.25
0
TA – AMBIENT TEMPERATURE (°C)
VF – FORWARD VOLTAGE (V)
5.4
ICCL
5.0
ICCH
4.6
4.2
3.8
TA = 25oC, VEE = 0V
5.4
5.0
ICCL
ICCH
4.6
4.2
3.8
-40
-20
0
20
40
60
80
100
10
TA – AMBIENT TEMPERATURE (°C)
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
12
14
16
18
20
VCC – SUPPLY VOLTAGE (V)
www.fairchildsemi.com
5
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves
Fig. 8 Propagation Delay vs. Forward LED Current
Fig. 7 Propagation Delay vs. Load Capacitance
200
200
VCC = 20V, VEE = 0
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
TA = 25oC
VCC = 20V, VEE = 0
IF = 10mA, TA = 25oC
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
t P – PROPAGATION DELAY (ns)
t P – PROPAGATION DELAY (ns)
180
160
tPHL
140
120
tPLH
100
80
180
160
tPHL
140
120
tPLH
100
80
60
60
5
10
15
20
25
6
8
CG – LOAD CAPACITANCE (nF)
12
14
16
Fig. 10 Propagation Delay vs. Ambient Temperature
Fig. 9 Propagation Delay vs. Series Load Resistance
200
200
VCC = 20V, VEE = 0
VCC = 20V, VEE = 0
IF = 10mA, TA = 25oC
CG = 10nF
f = 250 kHz, D. Cycle = 50%
180
t P – PROPAGATION DELAY (ns)
t P – PROPAGATION DELAY (ns)
10
IF – FORWARD LED CURRENT (mA)
160
140
tPHL
120
tPLH
100
80
IF = 10mA
RG = 10Ω, CG = 10nF
f = 250kHz, D. Cycle = 50%
180
160
140
tPHL
120
tPLH
100
80
60
60
10
20
30
40
50
-40
RG – SERIES LOAD RESISTANCE (Ω)
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 11 Propagation Delay vs. Supply Voltage
180
t P – PROPAGATION DELAY (ns)
IF = 10mA, TA = 25oC
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
160
140
tPHL
120
tPLH
100
80
60
10
15
20
25
VCC – SUPPLY VOLTAGE (V)
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
www.fairchildsemi.com
6
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves (Continued)
Through Hole
0.4" Lead Spacing
PIN 1
ID.
4
3
2
PIN 1
ID.
1
4
3
2
1
0.270 (6.86)
0.250 (6.35)
5
6
7
0.270 (6.86)
0.250 (6.35)
8
5
6
0.070 (1.78)
0.045 (1.14)
0.020 (0.51) MIN
0.200 (5.08)
0.140 (3.55)
0.154 (3.90)
0.120 (3.05)
0.022 (0.56)
0.016 (0.41)
7
8
0.390 (9.91)
0.370 (9.40)
SEATING PLANE
SEATING PLANE
0.390 (9.91)
0.370 (9.40)
0.016 (0.40)
0.008 (0.20)
0.100 (2.54) TYP
0.070 (1.78)
0.045 (1.14)
0.004 (0.10) MIN
0.200 (5.08)
0.140 (3.55)
15° MAX
0.154 (3.90)
0.120 (3.05)
0.300 (7.62)
TYP
0.022 (0.56)
0.016 (0.41)
0.016 (0.40)
0.008 (0.20)
0.100 (2.54) TYP
Surface Mount
0° to 15°
0.400 (10.16)
TYP
8-Pin DIP – Land Pattern
0.390 (9.91)
0.370 (9.40)
4
3
2
1
0.070 (1.78)
PIN 1
ID.
0.060 (1.52)
0.270 (6.86)
0.250 (6.35)
5
6
7
0.100 (2.54)
8
0.295 (7.49)
0.070 (1.78)
0.045 (1.14)
0.020 (0.51)
MIN
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
0.415 (10.54)
0.300 (7.62)
TYP
0.030 (0.76)
0.016 (0.41)
0.008 (0.20)
0.045 (1.14)
0.315 (8.00)
MIN
0.405 (10.30)
MAX.
Note:
All dimensions are in inches (millimeters)
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
www.fairchildsemi.com
7
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Package Dimensions
Option
Order Entry Identifier
(Example)
No option
FOD3181
S
FOD3181S
SD
FOD3181SD
T
FOD3181T
0.4" Lead Spacing
V
FOD3181V
VDE 0884
TV
FOD3181TV
VDE 0884, 0.4" Lead Spacing
SV
FOD3181SV
VDE 0884, Surface Mount
SDV
FOD3181SDV
Description
Standard Through Hole Device
Surface Mount, Lead Bend
Surface Mount, Tape and Reel
VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
3181
XX YY B
V
3
2
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
Two digit year code, e.g., ‘03’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
www.fairchildsemi.com
8
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Ordering Information
D0
P0
t
K0
P2
E
F
A0
W1
d
t
P
User Direction of Feed
Symbol
W
W
B0
Description
D1
Dimension in mm
Tape Width
16.0 ± 0.3
Tape Thickness
0.30 ± 0.05
P0
Sprocket Hole Pitch
4.0 ± 0.1
D0
Sprocket Hole Diameter
1.55 ± 0.05
E
Sprocket Hole Location
1.75 ± 0.10
F
Pocket Location
7.5 ± 0.1
4.0 ± 0.1
P2
P
Pocket Pitch
A0
Pocket Dimensions
12.0 ± 0.1
10.30 ±0.20
B0
10.30 ±0.20
K0
4.90 ±0.20
W1
d
R
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
Cover Tape Width
1.6 ± 0.1
Cover Tape Thickness
0.1 max
Max. Component Rotation or Tilt
10°
Min. Bending Radius
30
www.fairchildsemi.com
9
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Carrier Tape Specifications
245 C, 10–30 s
Temperature (°C)
300
260 C peak
250
200
150
Time above 183C, <160 sec
100
50
Ramp up = 2–10C/sec
0
0.5
0
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
• Peak reflow temperature: 260 C (package surface temperature)
• Time of temperature higher than 183 C for 160 seconds or less
• One time soldering reflow is recommended
Output Power Derating
The output power is the product of the average output
current squared times the output transistor’s RDS(ON):
The maximum package power dissipation is 295mW. The
package is limited to this level to ensure that under normal
operating conditions and over extended temperature
range that the semiconductor junction temperatures do
not exceed 125°C. The package power is composed of
three elements; the LED, static operating power of the
output IC, and the power dissipated in the output power
MOSFET transistors. The power rating of the output IC is
250mW. This power is divided between the static power of
the integrated circuit, which is the product of IDD times the
power supply voltage (VDD – VEE). The maximum IC
static output power is 150mW, (VDD – VEE) = 25V, IDD =
6mA. This maximum condition is valid over the operational temperature range of -40°C to +100°C. Under these
maximum operating conditions, the output of the power
MOSFET is allowed to dissipate 100mW of power.
PO(AVG) = IO(AVG)2 • RDS(ON)
The IO(AVG) is the product of the duty factor times the
peak
current flowing in the output. The duty factor is
the ratio of the ‘on’ time of the output load current divided
by the period of the operating frequency. An RDS(ON) of
2.0Ω results in an average output load current of 200mA.
The load duty factor is a ratio of the average output time
of the power MOSFET load circuit and period of the driving frequency.
The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting
output pulse width. Figure 13 shows an example of a
0.03µF gate to source capacitance with a series resistance of 40Ω. This reactive load results in a composite
average pulse width of 1.5µs. Under this load condition it
is not necessary to derate the absolute maximum output
current out to 250kHz.
The absolute maximum output power dissipation versus
ambient temperature is shown in Figure 12. The output
driver is capable of supplying 100mW of output power
over the temperature range from -40°C to 87°C. The output derates to 90mW at the absolute maximum operating
temperature of 100°C.
Fig. 13 Output Current Derating vs. Frequency
IO – PEAK OUTPUT CURRENT (A)
1.5
Fig. 12 Absolute Maximum Power Dissipation
vs. Ambient Temperature
POWER DISSIPATION (W)
0.15
VDD – VEE = Max. = 25V
IDD = 6mA
LED Power = 45mW
0.1
0.05
TA = -40°C to 100°C
Load = 0.03µF + 40Ω
VDD = 20V
IF = 12mA
LED Duty Factor = 50%
Output Pulse Width = 1.5µs
1
0.5
0
1
10
250
F – FREQUENCY (kHz)
0
-40
-20
0
20
40
60
80 85
TA – AMBIENT TEMPERATURE (°C)
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
www.fairchildsemi.com
10
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
Reflow Profile
Figure 14 illustrates the relationship of the LED input
drive current and the device’s output voltage and sourcing and sinking currents. The 0.03µF capacitor load represents the gate to source capacitance of a very large
power MOSFET transistor. A single supply voltage of
20V is used in the evaluation.
This device is tested and specified when driving a complex reactive load. The load consists of a capacitor in the
series with a current limiting resistor. The capacitor represents the gate to source capacitance of a power
MOSFET transistor. The test load is a 0.03uF capacitor
in series with an 40Ω resistor. The LED test frequency is
10.0kHz with a 50% duty cycle. The combined IOH and
IOL output load current duty factor is 0.6% at the test
frequency.
Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the
device. The IOH and IOL are measured at the peak of
their respective current pulses.
IF = 8mA
LED
OFF
ON
20V
N-Channel (ON)
P-Channel (ON)
OUTPUT
0
IOH = 0.5A
Load
Current
IOL = 0.5A
1µs/Div
Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive
Pulse
Generator
FOD3181
8
1
0.1µF
2
7
IOMON
VO
0.33µF
IFMON
100Ω
3
6
4
5
40Ω
22µF
100Ω
Figure 15. Test Schematic
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
www.fairchildsemi.com
11
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
IOH and IOL Test Conditions
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As used herein:
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
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counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
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Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The
datasheet is for reference information only.
Rev. I35
©2003 Fairchild Semiconductor Corporation
FOD3181 Rev. 1.0.8
www.fairchildsemi.com
12
FOD3181 — 0.5A Ouput Current, High Speed MOSFET Gate Driver Optocoupler
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