WT4884AM Surface Mount N-Channel Enhancement Mode MOSFET 8 7 12 AMPERES D S 2 6 D 3 S 5 D 4 G Features: DRAIN CURRENT D S 1 P b Lead(Pb)-Free DRAIN SOURCE VOLTAGE 30 VOLTAGE *Super high dense cell design for low RDS(ON) R DS(ON) <6 mΩ@VGS=10V R DS(ON) <8.5 mΩ@VGS=4.5V *Rugged and Reliable *SO-8 Package 1 SO-8 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unite Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS +20 - V ID 12 A Pulsed Drain Current (2) IDM 44 A Drain-Source Diode Forward Current (1) IS 1.7 A Power Dissipation (1) PD 2.5 W Maximax Junction-to-Ambient (1) R θ JA 50 C/W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C Continuous Drain Current (TJ =125 C) (1) Device Marking WT4884AM=STM4884A WEITRON http://www.weitron.com.tw 1/6 01-Aug-05 WT4884AM Electrical Characteristics Static (2) Characteristic Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA (TA=25 C Unless otherwise noted) Symbol Min Typ Max V(BR)DSS 30 - - V Unit VGS (th) 1 1.6 3 V Gate-Source Leakage Current +20V VDS=0V, VGS=- IGSS - - +100 - nA Zero Gate Voltage Drain Current VDS=24V, VGS=0V IDSS - - 1 uA - 6 8.5 7 11 ID(on) 20 - - A gfs - 22 - S Ciss - 3150 - Coss - 680 - Crss - 510 - Turn-On Delay Time VGS =10V,VDD =15V, ID=1A, RGEN=6Ω td(on) - 27 - nS Rise Time VGS =10V,VDD =15V, ID=1A, RGEN=6Ω tr - 13 - nS Turn-Off Time VGS =10V,VDD =15V, ID=1A, RGEN=6Ω td(off ) - 127.5 - nS Fall Time VGS =10V,VDD =15V, ID=1A, RGEN=6Ω tf - 55.5 - nS Total Gate Charge VDS=15V, ID=12A, VGS =10V VDS=15V, ID=12A, V GS =4.5V Qg - 65 30.5 - Gate-Source Charge VDS=15V, VGS=10V, ID=12A Qgs - 11 - nc Gate-Drain Charge VDS=15V, VGS=10V, ID=12A Qgd - 13 - nc Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A VSD - 0.75 1.2 V Drain-Source On-Resistance VGS=10V, ID=12A VGS=4.5V, ID=10A On-State Drain Current VDS=10V, VGS=10V Forward Transconductance VDS=15V, ID=12A rDS (on) mΩ Dynamic (3) Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ PF Switching (3) nc - Note: 1. Surface Mounted on FR4 Board t < _ 10sec. < _ _ 2%. 2. Pulse Test : PW 300us, Duty Cycle < 3. Guaranteed by Design, not Subject to Production Testing. WEITRON http://www.weitron.com.tw 2/6 01-Aug-05 WT4884AM 20 20 VGS=3.5V VGS=4V 16 15 VGS=4.5V ID, Drain Current (A) ID, Drain Current (A) W E IT R O N VGS=10V 12 VGS=3V 8 4 10 125 C 5 -55 C 25 C 1 VGS=2.5V 0.5 0 1 1.5 2 0 3 2.5 0 1.2 1.8 2.4 3.6 3.0 VGS, Gate-to-Source Voltage (V) Fig.1 Output Characteristics Fig.2 Transfer Characteristics 4200 1.8 3500 1.6 Ciss 2800 2100 1400 Coss 700 0 Crss 0 5 10 15 20 25 VGS=10V ID=12A 1.4 1.2 1.0 0.8 0.6 -55 30 Fig.3 Capacitance 1.3 BVDSS, Normalized Drain-Source Breakdown Voltage 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 50 75 100 125 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 Fig.6 Breakdown Voltage Variation with Temperature Fig.5 Gate Threshold Variation with Temperature WEITRON 25 Tj, Junction Temperature (˚C) Tj, Junction Temperature (˚C) http://www.weitron.com.tw 0 Fig.4 On-Resistance Variation with Temperature VDS=VGS ID=250uA 1.2 -25 Tj, Junction Temperature ( C) VDS, Drain-to Source Voltage (V) Vth, Normalized Gate-Source Threshold Voltage 0.6 VDS, Drain-to-Source Voltage (V) RDS(ON), On-Resistance (Normalized) C, Capacitance (pF) 0 3/6 01-Aug-05 WT4884AM W E IT R O N 20.0 Is, Source-drain current (A) gFS, Transconductance (S) 30 24 18 12 6 0 VDS=10V 0 5 10 15 VGS=0V 10.0 1.0 20 0.2 0.4 IDS, Drain-Source Current (A) it m 4 2 18 1.2 27 36 45 54 63 RD S (O N) Li 6 9 10 ID, Drain Current (A) VGS, Gate to Source Voltage (V) 50 VDS=15V ID=12A 0 1.0 Fig.8 Body Diode Forward Voltage Variation with Source Current 10 0 0.8 VSD, Body Diode Forward Voltage (V) Fig.7 Transconductance Variation with Drain Current 8 0.6 10 1 0.1 0.03 72 DC 1s 10 0m m s s VGS=10V Single Pulse TA=25 C 0.1 1 10 30 50 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Fig.9 Gate Charge Fig.10 Maximum Safe Operating Area V DD ton RL V IN D tf 90% 90% V OUT V OUT VGS R GEN toff td(off ) tr td(on) 10% INVERTED 5 10% G 90% S V IN 50% 50% 10% PULSE WIDTH FIG.11 Switching Test Circuit WEITRON http://www.weitron.com.tw FIG.12 Switching Waveforms 4/6 01-Aug-05 WT4884AM W E IT R O N THERMAL RESISTANCE r(t) ,NORMALIZED TRANSIENT 10 1 Duty Cycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 1. R θjA (t)=r (t) * Rθ j A 2. Rθ jA=See Datasheet 3. TjM-TA = PDM* Rθ jA(t) 4. Duty Cycle, D=t1/t 2 0.02 Single Pulse 0.01 0.0001 0.001 t2 0.01 0.1 1 10 100 SQUARE WAVE PULSE DURATION(SEC) FIG.13 NORMALIZED THERMAL TRANSIENT IMPEDANCE CUREVE WEITRON http://www.weitron.com.tw 5/6 01-Aug-05 WT4884AM SO-8 Package Outline Dimensions Unit:mm 1 L θ E1 D 7(4X) e B A1 2A A C 7 (4X) eB SYMBOLS A A1 B C D E1 eB e L θ WEITRON http://www.weitron.com.tw MILLIMETERS MAX MIN 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8 6/6 01-Aug-05