SMT Multi TOPLED® SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten • SMT package with red emitter (635 nm) and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter and detector can be controlled separately • Suitable for IR-reflow soldering Anwendungen Applications • Datenübertragung • Wegfahrsperre • Infrarotschnittstelle • Data transmission • Lock bar • Infrared interface Typ Type Bestellnummer Ordering Code SFH 331-JK Q62702-P1634 2001-02-22 1 SFH 331 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Betriebstemperatur Operating temperature range Top – 40 … + 100 – 40 … + 100 °C Lagertemperatur Storage temperature range Tstg – 40 … + 100 – 40 … + 100 °C Sperrschichttemperatur Junction temperature Tj + 100 + 100 °C Durchlaßstrom (LED) Forward current (LED) IF 30 – mA Kollektorstrom (Transistor) Collector current (Transistor) IC – 15 mA Stoßstrom Surge current t ≤ 10 µs, D = 0.005 IFM 500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5 – V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE – 35 V Verlustleistung Power dissipation Ptot 100 165 mW RthJA 450 450 K/W RthJS 350 – K/W LED Wärmewiderstand Sperrschicht/Umgebung Thermal resistance junction/ambient Montage auf PC-Board1) (Padgröße ≥ 16 mm2) mounting on pcb1) (pad size ≥ 16 mm2) Sperrschicht / Lötstelle junction / soldering joint 1) Einheit Unit Transistor PC-board: G30/FR4 Note: Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom Betriebszustand des anderen. The stated max. ratings refer to the specified chip regardless of the operating status of the other one. 2001-02-22 2 SFH 331 Kennwerte LED (TA = 25 °C) Characteristics LED Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge des emittierten Lichtes Wavelength at peak emission IF = 10 mA (typ.) (typ.) λpeak 635 nm Dominantwellenlänge Dominant wavelength IF = 10 mA (typ.) (typ.) λdom 628 nm Spektrale Bandbreite bei 50% von Irel max Spectral bandwidth at 50% of Irel max IF = 10 mA (typ.) (typ.) ∆λ 45 nm 2ϕ 120 Grad deg. Abstrahlwinkel bei 50% von IV (Vollwinkel) Viewing angle at 50% of IV Durchlaßspannung Forward voltage IF = 10 mA (typ.) (max.) VF VF 2.0 2.6 V V Sperrstrom Reverse current VR = 5 V (typ.) (max) IR IR 0.01 10 µA µA Kapazität, Capacitance VR = 0 V, f = 1 MHz (typ.) Co 12 pF (typ.) (typ.) tr tf 300 150 ns ns (typ.) IV 6 (4.0 … 12.5) mcd Schaltzeiten: Switching times: IV from 10% to 90% IV from 90% to 10% IF = 100 mA, tp = 10 µs, RL = 50 Ω Lichtstärke (Gruppe JK) Luminous intensity (group JK) IF = 10 mA 2001-02-22 3 SFH 331 Kennwerte Fototransistor (TA = 25 °C, λ = 950 nm) Characteristics Phototransistor Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 860 nm Spektraler Bereich der Fotoempfindlichkeit λ 380 … 1150 nm Bestrahlungsempfindliche Fläche (∅ 240 µm) Radiant sensitive area (∅ 240 µm) A 0.045 mm2 Abmessungen der Chipfläche Dimensions of chip area L×B 0.45 × 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip surface to case surface H 0.5 … 0.7 mm Halbwinkel Half angle ϕ ± 60 Grad deg. Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 (≤ 200) nA Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V IPCE ≥ 16 µA Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 7 µs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 5 µA, Ee = 0.1 mW/cm2 VCEsat 150 mV S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 2001-02-22 4 SFH 331 LED Radiation Characteristics Irel = f (ϕ) Phototransistor Directional Characteristics Srel = f (ϕ) 40˚ 30˚ 20˚ 10˚ 0˚ ϕ 50˚ OHL01660 1.0 0.8 0.6 60˚ 0.4 70˚ 0.2 80˚ 0 90˚ 100˚ 1.0 0.8 0.6 0˚ 0.4 20˚ 40˚ 60˚ 80˚ 100˚ 120˚ LED Relative Spectral Emission Irel = f (λ), TA = 25 °C, IF = 20 mA V(λ) = Standard Eye Response Curve OHL02350 100 % Φ rel 80 Vλ 60 40 20 super-red 0 400 450 500 550 600 650 nm λ 2001-02-22 5 700 SFH 331 Forward Current IF = f (VF), TA = 25 °C Rel. Luminous Intensity IV/IV(10mA) = f (IF), TA = 25 °C OHL02351 10 2 Ι F mA Perm. Pulse Handling Capability IF = f (tp), duty cycle D = parameter, TA = 25 °C OHL02316 10 1 OHL01686 10 3 IF ΙV 10 10 1 D= mA Ι V(10mA) tP tP IF T T D = 0.005 0 0.01 0.02 0.05 0.1 5 5 super-red 10 -1 super-red 10 2 0.2 5 5 10 0 DC 5 10 -1 1.0 1.4 1.8 2.2 2.6 10 -3 10 3.0 V 3.4 VF Max. Permissible Forward Current IF = f (TA) ΙF 0.5 10 -2 5 5 10 0 5 10 1 mA 10 ΙF 2 Wavelength at Peak Emission λpeak = f (TA), IF = 20 mA OHL01661 60 mA -1 10 1 -5 10 10 -3 10 -2 10 -1 10 0 s 10 1 tp Dominant Wavelength λdom = f (TA), IF = 20 mA OHL02104 690 λ peak 10 -4 OHL02105 690 λ dom nm nm 50 650 650 40 super-red orange 610 610 20 10 super-red 630 630 30 590 yellow 590 570 green 570 orange yellow green pure-green pure-green 0 0 20 40 60 Forward Current VF = f (TA), IF = 10 mA 0 20 40 60 80 ˚C 100 TA Rel. Luminous Intensity IV/IV(25 °C) = f (TA), IF = 10 mA OHL02106 2.4 VF 550 80 ˚C 100 TA OHL02150 2.0 IV V I V (25 ˚C) 2.2 2.0 1.6 1.2 yellow green green super-red orange yellow 1.8 pure-green 0.8 orange super-red pure-green 1.6 1.4 0.4 0 20 40 60 80 ˚C 100 0.0 0 20 40 60 2001-02-22 80 ˚C 100 TA TA 6 550 0 20 40 60 80 ˚C 100 TA SFH 331 Phototransistor Rel. Spectral Sensitivity Srel = f (λ) OHF01121 100 S rel % Photocurrent IPCE = f (VCE), Ee = Parameter 10 mA Ι PCE OHF01529 0 80 Dark Current ICEO = f (VCE), E = 0 1 mW cm 2 10 1 nA Ι CEO 0.5 mW cm 2 10 0 OHF01527 mW 0.25 cm 2 60 10 -1 10 -1 0.1 40 mW cm 2 10 -2 20 0 400 600 800 1000 nm 1200 λ 10 -2 0 5 10 15 20 25 30 V 35 V CE Total Power Dissipation Capacitance Ptot = f (TA) CCE = f (VCE), f = 1 MHz, E = 0 OHF00871 200 5.0 mW C CE pF 160 4.0 P tot OHF01528 10 -3 0 5 10 15 20 25 30 V 35 V CE Photocurrent IPCE/IPCE25° = f (TA), VCE = 5 V Ι PCE Ι PCE 25 OHF01524 1.6 1.4 1.2 3.5 1.0 120 3.0 2.5 0.8 80 2.0 0.6 40 1.0 1.5 0.4 0.2 0.5 0 0 20 40 60 80 ˚C 100 TA Dark Current ICEO = f (TA), VCE = 5 V, E = 0 OHF01530 10 3 nA Ι CEO 0 10 -2 10 1 10 1 10 0 10 0 2001-02-22 25 50 75 ˚C 100 TA 10 1 V 10 2 V CE OHF01924 10 3 µA Ι PCE 10 2 0 10 0 Photocurrent IPCE = f (Ee), VCE = 5 V 10 2 10 -1 -25 10 -1 10 -1 -3 10 4 3 2 mW/cm 2 10 -2 10 0 Ee 7 0 -25 0 25 50 75 C 100 TA SFH 331 Maßzeichnung Package Outlines 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) C E 3.7 (0.146) 3.3 (0.130) C 0.1 (0.004) typ 4 Package marking Emission color : super-red (SFH 331) 0.5 (0.020) A 1 0.9 (0.035) 0.7 (0.028) 3 1.1 (0.043) 2 (2.4 (0.094)) 3.4 (0.134) 3.0 (0.118) 0.8 (0.031) 0.6 (0.024) 2.1 (0.083) 1.7 (0.067) 0.6 (0.024) 0.4 (0.016) 0.18 (0.007) 0.12 (0.005) GPLY6924 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 8