MUR120120 Ultra Fast Recovery Diodes Dimensions TO-247AC A C(TAB) C A C A=Anode, C=Cathode, TAB=Cathode MUR120120 VRSM V 1200 Symbol IFRMS IFAVM IFAV IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Unit TVJ=TVJM TC=60oC; rectangular, d=0.5 TC=95oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 100 109 75 tbd A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 600 660 540 600 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 1800 1800 1450 1500 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight Millimeter Min. Max. Maximum Ratings TVJ=45oC I2t VRRM V 1200 Dim. o C 357 W 0.8...1.2 Nm 6 g MUR120120 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 3 1.5 20 mA VF IF=70A; TVJ=150oC TVJ=25oC 1.55 1.8 V VTO For power-loss calculations only 1.2 V TVJ=TVJM 4.6 rT RthJC RthCK RthJA trr IRM m 0.35 K/W 0.25 35 IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC o _ VR=350V; IF=75A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C 40 60 ns 25 30 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-247AC * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR120120 Ultra Fast Recovery Diodes 16 T = 100°C VJ uC V = 600V 14 R 150 A 125 IF 120 TVJ= 100°C A VR = 600V 100 IRM Qr 12 100 IF=140A IF= 70A IF= 35A 10 TVJ=150°C 80 8 75 TVJ=100°C 60 6 50 TVJ= 25°C 40 4 25 20 2 0 0.0 0.5 IF=140A IF= 70A IF= 35A 1.0 0 100 1.5 V 2.0 VF Fig. 1 Forward current IF versus VF 0 A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 500 1.4 450 1.2 1.5 50 VFR 400 40 350 30 IRM IF=140A IF= 70A IF= 35A 300 us tfr 1.0 tfr 0.8 VFR 20 0.5 Qr 0.6 250 0.4 10 200 0 40 80 120 °C 160 0 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/us 800 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 K/W 0 200 400 600 800 diF/dt 0.0 1000 A/us Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 4 D=0.7 0.5 0.1 600 A/us 800 1000 -diF/dt TVJ= 100°C IF = 100A 1.0 ZthJC 400 Fig. 3 Peak reverse current IRM versus -diF/dt V trr Kf 200 60 TVJ= 100°C VR = 600V ns 0 0.3 0.2 0.01 0.05 Single Pulse 0.01 0.001 0.01 0.1 Fig. 7 Transient thermal resistance junction to case 1s 10 t Rthi (K/W) ti (s) 0.017 0.0184 0.1296 0.185 0.00038 0.0026 0.0387 0.274