MUR2960S Ultra Fast Recovery Diodes Dimensions TO-263(D2PAK) C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode MUR2960S Symbol IFRMS IFAVM IFRM IFSM Weight 1. 2. 3. 4. Gate Collector Emitter Collector Botton Side Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 8.00 9.65 8.89 .340 .315 .380 .350 E E1 e 9.65 10.29 6.22 8.13 2.54 BSC .380 .405 .245 .320 .100 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.20 .575 .090 .040 .050 0 .625 .110 .055 .070 .008 R 0.46 0.74 .018 .029 Maximum Ratings Unit TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 70 29 375 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 300 320 260 280 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 450 420 340 320 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot VRRM V 600 Test Conditions TVJ=45oC I2t VRSM V 600 Dim. TC=25oC o C 125 W 2 g MUR2960S Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 100 50 7 uA uA mA VF IF=29A; TVJ=150oC TVJ=25oC 1.4 1.6 V VTO For power-loss calculations only 1.01 V TVJ=TVJM 7.1 m 1.0 K/W 35 50 ns 10 11 A rT RthJC trr IRM o IF=1A; -di/dt=100A/us; VR=30V; TVJ=25 C o _ VR=350V; IF=29A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-263 * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling MUR2960S Ultra Fast Recovery Diodes Fig. 1 Forward current versus voltage drop. Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus -diF/dt. Fig. 4 Dynamic parameters versus junction temperature. Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage versus diF/dt. Fig. 7 Transient thermal impedance junction to case.