KERSEMI MUR8100T

MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
200
600
1000
MUR820
MUR860
MUR8100
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Maximum Ratings
Unit
TVJ=TVJM
o
TC=115 C; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
16
8
130
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
100
110
85
95
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
50
50
36
37
As
o
TVJ=150 C
o
TVJ=45 C
2
It
VRRM
V
200
600
1000
Dim.
o
TVJ=150 C
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
o
Ptot
TC=25 C
Md
Mounting torque
Weight
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2
o
C
50
W
0.4...0.6
Nm
2
g
MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Symbol
Characteristic Values
typ.
max.
Test Conditions
o
IR
TVJ=25 C; VR=VRRM
o
TVJ=25 C; VR=0.8.VRRM
o
TVJ=125 C; VR=0.8.VRRM
o
Unit
20
10
1.5
uA
uA
mA
VF
IF=8A; TVJ=150 C
o
TVJ=25 C
1.3
1.5
V
VTO
For power-loss calculations only
0.98
V
TVJ=TVJM
28.7
rT
RthJC
RthCK
RthJA
trr
IRM
m
2.5
K/W
0.5
60
o
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25 C
o
_
VR=350V; IF=8A; -diF/dt=64A/us; L<0.05uH;
TVJ=100 C
35
50
ns
2.5
2.8
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-220AC
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
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MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
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