SUR3080PT thru SUR30120PT Ultra Fast Recovery Epitaxial Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode SUR3080PT SUR30100PT SUR30120PT VRSM V 800 1000 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 Unit TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 25 15 150 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 75 80 65 70 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 28 27 21 20 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight Millimeter Min. Max. Maximum Ratings TVJ=45oC I2t VRRM V 800 1000 1200 Dim. o C 78 W 0.4...0.6 Nm 2 g SUR3080PT thru SUR30120PT Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 250 150 4 uA uA mA VF IF=15A; TVJ=150oC TVJ=25oC 2.2 2.6 V VTO For power-loss calculations only 1.65 V TVJ=TVJM 46.2 rT RthJC RthCK RthJA trr IRM m 1.6 K/W 0.5 60 IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC o _ VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C 50 70 ns 6.5 7.2 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR3080PT thru SUR30120PT Ultra Fast Recovery Epitaxial Diodes 30 3.0 A µC 25 2.5 30 TVJ=100°C A V =540V R 25 TVJ=100°C VR= 540V max. IF 20 Qr TVJ=25°C TVJ=100°C TVJ=150°C 15 2.0 1.5 10 IRM IF=11A IF=22A IF=11A IF=5.5A IF=11A IF=22A IF=11A IF=5.5A 20 15 10 1.0 typ. max. 5 0.5 0 5 typ. 0 0.0 0 1 2 3 V 4 1 100 A/µs 1000 10 VF 0 Fig. 1 Forward current versus voltage drop. 1.2 TVJ=100°C VR=540V 0.8 1.0 IRM trr 0.8 0.6 IF=11A IF=22A IF=11A IF=5.5A max. 0.6 400 VFR 60 V 1200 50 1000 ns VFR 40 800 tfr 600 30 tfr 0.4 QR 300 A/µs Fig. 3 Peak reverse current versus -diF/dt. 1.0 µs 200 -diF/dt Fig. 2 Recovery charge versus -diF/dt. 1.4 Kf 100 -diF/dt 400 20 0.4 0.2 10 0.2 TVJ=125°C IF=11A typ. 0.0 0.0 0 40 80 120 °C 160 0 0 TJ Fig. 4 Dynamic parameters versus junction temperature. 100 200 -diF/dt 300 A/µs 400 Fig. 5 Recovery time versus -diF/dt. Fig. 7 Transient thermal impedance junction to case. 0 100 200 diF/dt 300 A/µs 400 Fig. 6 Peak forward voltage versus diF/dt. 200 0