SUR15100 thru SUR15120 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode SUR15100 SUR15120 VRSM V 1000 1200 Symbol IFRMS IFAVM IFRM IFSM Test Conditions Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Unit TVJ=TVJM TC=100oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM 25 15 150 A TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 75 80 65 70 A t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine 28 27 21 20 A2s TVJ=150oC TVJ=150oC -40...+150 150 -40...+150 TVJ TVJM Tstg Ptot TC=25oC Md Mounting torque Weight A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Maximum Ratings TVJ=45oC I2t VRRM V 1000 1200 Dim. o C 78 W 0.4...0.6 Nm 2 g SUR15100 thru SUR15120 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM 250 150 4 uA uA mA VF IF=15A; TVJ=150oC TVJ=25oC 2.2 2.6 V VTO For power-loss calculations only 1.65 V TVJ=TVJM 46.2 rT RthJC RthCK RthJA trr IRM m 1.6 K/W 0.5 60 IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC o _ VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C 50 70 ns 6.5 7.2 A FEATURES APPLICATIONS ADVANTAGES * International standard package JEDEC TO-220AC * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR15100 thru SUR15120 Ultra Fast Recovery Epitaxial Diodes 30 3.0 A µC 25 2.5 30 TVJ=100°C A V =540V R 25 TVJ=100°C VR= 540V max. IF 20 Qr TVJ=25°C TVJ=100°C TVJ=150°C 15 2.0 1.5 10 IRM IF=11A IF=22A IF=11A IF=5.5A IF=11A IF=22A IF=11A IF=5.5A 20 15 10 1.0 typ. max. 5 0.5 0 5 typ. 0 0.0 0 1 2 3 V 4 1 100 A/µs 1000 10 VF 0 Fig. 1 Forward current versus voltage drop. 1.2 TVJ=100°C VR=540V 0.8 1.0 IRM trr 0.8 0.6 IF=11A IF=22A IF=11A IF=5.5A max. 0.6 400 VFR 60 V 1200 50 1000 ns VFR 40 800 tfr 600 30 tfr 0.4 QR 300 A/µs Fig. 3 Peak reverse current versus -diF/dt. 1.0 µs 200 -diF/dt Fig. 2 Recovery charge versus -diF/dt. 1.4 Kf 100 -diF/dt 400 20 0.4 0.2 10 0.2 TVJ=125°C IF=11A typ. 0.0 0.0 0 40 80 120 °C 160 0 0 TJ Fig. 4 Dynamic parameters versus junction temperature. 100 200 -diF/dt 300 A/µs 400 Fig. 5 Recovery time versus -diF/dt. Fig. 7 Transient thermal impedance junction to case. 0 100 200 diF/dt 300 A/µs 400 Fig. 6 Peak forward voltage versus diF/dt. 200 0