SIRECTIFIER SUR15100

SUR15100 thru SUR15120
Ultra Fast Recovery Epitaxial Diodes
Dimensions TO-220AC
A
C
A
C
C(TAB)
A=Anode, C=Cathode, TAB=Cathode
SUR15100
SUR15120
VRSM
V
1000
1200
Symbol
IFRMS
IFAVM
IFRM
IFSM
Test Conditions
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Unit
TVJ=TVJM
TC=100oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
25
15
150
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
75
80
65
70
A
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
28
27
21
20
A2s
TVJ=150oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
Mounting torque
Weight
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Maximum Ratings
TVJ=45oC
I2t
VRRM
V
1000
1200
Dim.
o
C
78
W
0.4...0.6
Nm
2
g
SUR15100 thru SUR15120
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
250
150
4
uA
uA
mA
VF
IF=15A; TVJ=150oC
TVJ=25oC
2.2
2.6
V
VTO
For power-loss calculations only
1.65
V
TVJ=TVJM
46.2
rT
RthJC
RthCK
RthJA
trr
IRM
m
1.6
K/W
0.5
60
IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC
o
_
VR=540V; IF=15A; -diF/dt=100A/us; L<0.05uH;
TVJ=100 C
50
70
ns
6.5
7.2
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-220AC
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
SUR15100 thru SUR15120
Ultra Fast Recovery Epitaxial Diodes
30
3.0
A
µC
25
2.5
30
TVJ=100°C
A V =540V
R
25
TVJ=100°C
VR= 540V
max.
IF
20
Qr
TVJ=25°C
TVJ=100°C
TVJ=150°C
15
2.0
1.5
10
IRM
IF=11A
IF=22A
IF=11A
IF=5.5A
IF=11A
IF=22A
IF=11A
IF=5.5A
20
15
10
1.0
typ.
max.
5
0.5
0
5
typ.
0
0.0
0
1
2
3
V
4
1
100 A/µs 1000
10
VF
0
Fig. 1 Forward current
versus voltage drop.
1.2
TVJ=100°C
VR=540V
0.8
1.0
IRM
trr
0.8
0.6
IF=11A
IF=22A
IF=11A
IF=5.5A
max.
0.6
400
VFR
60
V
1200
50
1000
ns
VFR
40
800
tfr
600
30
tfr
0.4
QR
300
A/µs
Fig. 3 Peak reverse current versus
-diF/dt.
1.0
µs
200
-diF/dt
Fig. 2 Recovery charge versus -diF/dt.
1.4
Kf
100
-diF/dt
400
20
0.4
0.2
10
0.2
TVJ=125°C
IF=11A
typ.
0.0
0.0
0
40
80
120 °C 160
0
0
TJ
Fig. 4 Dynamic parameters versus
junction temperature.
100
200
-diF/dt
300 A/µs 400
Fig. 5 Recovery time versus -diF/dt.
Fig. 7 Transient thermal impedance junction to case.
0
100
200
diF/dt
300 A/µs 400
Fig. 6 Peak forward voltage
versus diF/dt.
200
0