MRF648 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF648 is Designed for 12.5 V UHF large signal amplifier applications up to 512 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x Ø N • Internal Input Matching Network • PG = 4.4 dB at 60 W/470 MHz • Omnigold™ Metalization System FU LL R D B MAXIMUM RATINGS M K H 11 A IC E .725/18,42 F G J I L D IM M IN IM U M inches / m m inches / m m 36 V A .150 / 3.43 .160 / 4.06 VCEO 16 V C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 VEBO 4.0 V VCBO PDISS TSTG -65 °C to +150 °C θJC 1.0 °C/W E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H .725 / 18.42 I -65 °C to +200 °C TJ .045 / 1.14 B 175 W @ TC = 25 °C M AXIM U M J .970 / 24.64 K .090 / 2.29 .980 / 24.89 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M .120 / 3.05 N .135 / 3.43 Common Emitter CHARACTERISTICS SYMBOL TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM BVCES IC = 50 mA 36 BVCEO IC = 50 mA 16 BVEBO IE = 5.0 Ma 4.0 ICES VCE = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V PG ηC VCE = 12.5 V IC = 6.0 A POUT = 60 W V V 20 f = 1.0 MHz f = 470 MHz 130 4.4 55 5.0 65 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. UNITS 15 mA 150 --- 150 pF dB % REV. A 1/1