SD1480 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1480 is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: PACKAGE STYLE .500 6L FLG • Internal Input Matching Network • Common Emitter • PG = 9.0 dB at 125 W/175 MHz • Omnigold™ Metalization System A C 2x ØN FU LL R D B MAXIMUM RATINGS IC 20 A VCBO 65 V VCEO VCES VEBO E .725/18,42 F G M K H 36 V 4.0 V I L D IM M IN IM U M inche s / m m inche s / m m A .150 / 3.43 .160 / 4.06 M AX IM U M .045 / 1.14 B 65 V J C .210 / 5.33 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 G .003 / 0.08 .007 / 0.18 .125 / 3.18 H PDISS 270 W @ TC = 25 °C I J .970 / 24.64 .980 / 24.89 TJ -65 °C to +200 °C K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .725 / 18.42 TSTG -65 °C to +150 °C θJC 0.65 °C/W CHARACTERISTICS .120 / 3.05 N .135 / 3.43 TC = 25 °C NONETEST CONDITIONS SYMBOL .170 / 4.32 .285 / 7.24 M MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 65 V BVCES IC = 100 mA 65 V BVCEO IC = 100 mA 35 BVEBO IE = 10 mA 4.0 ICES VCE = 30 V hFE VCE = 5.0 V COB VCB = 28 V PG ηC VCE = 28 V IC = 5.0 A 20 f = 1.0 MHz POUT = 125 W f = 150 MHz 9.2 55 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. V 15 mA 200 --- 250 pF dB % REV. B 1/1