NSR0320MW2T1 Schottky Barrier Diode These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. • Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B http://onsemi.com − Machine Model: C • Pb−Free Package May be Available. The G−Suffix Denotes a HIGH CURRENT SCHOTTKY BARRIER DIODE 1 CATHODE 2 1 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Peak Revese Voltage Symbol Value Unit VR 20 Vdc VRM 23 V 200 2.0 mW mW/°C 2 ANODE MARKING DIAGRAM RD M SOD−323 CASE 477 STYLE 1 RD M Pb−Free Lead Finish RD = Specific Device Code M = Date Code Forward Power Dissipation @ TA = 25°C Derate above 25°C PF Forward Current (DC) Continuous IF Forward Current t = 8.3 ms Half Sinewave IF Junction Temperature TJ 125 Max °C NSR0320MW2T1G SOD−323 3000/Tape & Reel Storage Temperature Range Tstg −55 to +150 °C NSR0320MW2T3G SOD−323 10,000/Tape & Reel A 1 A 5 ORDERING INFORMATION Device Package Shipping† NSR0320MW2T1 SOD−323 3000/Tape & Reel NSR0320MW2T3 SOD−323 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 0 Publication Order Number: NSR0320MW2T1/D NSR0320MW2T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Total Capacitance (VR = 5.0 V, f = 1.0 MHz) CT − 30 35 pF Reverse Leakage (VR = 15 V) IR − 10 50 Adc Reverse Leakage (VR = 2.0 V @ 85° C) IR − 200 300 A Reverse Leakage (VR = 15.0 V @ 85° C) IR − 450 1000 A Forward Voltage (IF = 10 mAdc) VF − 0.24 0.27 Vdc Forward Voltage (IF = 100 mAdc) VF − 0.30 0.35 Vdc Forward Voltage (IF = 900 mAdc) VF − 0.45 0.50 Vdc 10000 100 IR, REVERSE CURRENT (A) 150°C 150°C 10 85°C −55°C 1 0.0 25°C 0.1 −45°C 0.2 0.3 0.4 0.5 125°C 1000 85°C 100 10 25°C 1 0.6 0 5 10 15 20 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 140 120 CT, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 100 80 60 40 20 0 0 5 10 15 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 2 20 25 NSR0320MW2T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. K A D 1 2 B DIM A B C D E H J K L E C J NOTE 3 L NOTE 5 MILLIMETERS MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 0.075 −−− H STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 INCHES MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106 0.003 −−− NSR0320MW2T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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