MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION BLOCK DIAGRAM The MGFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Low Noise Amplifier.(LNA) . Vd1 Vd2 Vd3 FEATURES Out In RF frequency : 37.0 to 40.0 GHz Super Low Noise NF=3.5dB (TYP.) PHOTOGRAPH ABSOLUTE MAXIMUM RATINGS (Ta=25˚C) Symbol Parameter Values Unit Vd Drain bias voltage 3 V Id Drain bias current 30 mA Vg Gate bias voltage - V Pin Maximum peak input power overdrive (Duration < 1sec) TBD dBm Ta Operating temperature range TBD ˚C TARGET SPECIFICATIONS (Ta=25˚C) Limits Symbol Fop Gain Parameter Test conditions Min. Typ. Operating frequency 37.0 range 17.0 Small signal gain On-wafer 40.0 1.5 dB 3.5 dB Delta gain Noise figure VSWR in Input VSWR 2.0:1 VSWR out Output VSWR 2.0:1 Output IP3 Output power at 1 dB compression Output power at 3rd- (5) Freq=30GHz TBD Vd=2V,Id=20mA (17) TBD 2.5 order intercept point Vd Id Vg Drain bias voltage Drain bias current Gate bias voltage 30 No need MITSUBISHI ELECTRIC GHz dB NF measurement Unit 18.0 Small signal gain flatness P1dB Max. dBm dBm V mA V as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : µm) 2190 1850 1550 1050 550 Vd1 Vd2 Vd3 GND GND GND RF-in RF-out GND GND 110 2300 MITSUBISHI ELECTRIC as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier TYPICAL CHARACTERISTICS Small Signal Performances (Vd = 2.5 V, Id = 30 mA, Ta = 25 ˚C ) NF 25 10 20 8 15 6 4 10 VSWR out 5 2 VSWR in 0 0 36 37 38 39 40 Frequency [GHz] MITSUBISHI ELECTRIC 41 as of July '98 MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 Notice : This is not a final specification Some parametric limits are subject to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier AN EXAMPLE OF TEST CIRCUIT Cb Cb Cb :Chip capacitor (39pF) Cb > 100µF Vd1 Vd2 Vd3 GND GND GND RF-out RF-in GND GND *1 *2 *1 *2 *1 Length of bonding wire < 200 µm *2 Number of bonding wire ≥ 3 MITSUBISHI ELECTRIC as of July '98