RO-P-DS-3071 MAAPGM0035 1.6W S/C-Band Power Amplifier 2.5-5.5 GHz Preliminary Information 2.5-5.5 GHz GaAs MMIC Amplifier Features ♦ ♦ ♦ ♦ ♦ 2.5-5.5 GHz Operation 1.6 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG ® MESFET Process High Performance Ceramic Bolt Down Package APGM0035 YWWLLLL Primary Applications ♦ WLL ♦ MMDS ♦ SatCom Description The MAAPGM0035 is a packaged, 2-stage, 1.6 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate (MSAG ®) MESFET Process. Maximum Operating Conditions Parameter Pin Number Description 1 No Connection 2 V GG 3 RF IN 4 V GG 5 No Connection 6 No Connection 7 V DD 8 RF OUT 9 V DD 10 No Connection 1 Symbol Absolute Maximum Units Input Power PIN 25.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 790 mA PDISS 6.3 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C Quiescent DC Power Dissipated (No RF) 1. Operation outside of these ranges may reduce product reliability. RO-P-DS-3071 1.6W S/C-Band Power Amplifier 2/6 MAAPGM0035 Recommended Operating Conditions Min Typ Max Unit Drain Supply Voltage Characteristic Symbol VDD 4.0 8.0 10.0 V Gate Supply Voltage VGG -2.3 -2.0 -1.5 V 20.0 23.0 dBm 150 °C Input Power PIN Junction Temperature TJ Thermal Resistance T JC MMIC Base Temperature TB 14.9 °C/W Note 2 °C 2. Maximum MMIC Base Temperature = 150°C — T JC* VDD * IDQ Electrical Characteristics: TB = 40°C3, Z0 = 50 Ω, V DD = 8V, V GG = -1.8V, Pin = 20 dBm, R G = 121O Parameter Symbol Typical Units Bandwidth f 2.5-5.5 GHz Output Power POUT 32 dBm Power Added Efficiency PAE 32 % 1-dB Compression Point P1dB 32 dBm Small Signal Gain G 17 dB Input VSWR VSWR 1.5:1 Output VSWR VSWR 3:1 Gate Supply Current IGG <6 mA Drain Supply Current IDD < 850 mA Noise Figure NF 7 dB 2nd Harmonic 2f -10 dBc 3rd 3f -20 dBc Output Third Order Intercept OTOI 42 dBm 3rd Order Intermodulation Distortion, Single Carrier Level = 22 dBm IM3 -16 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 22 dBm IM5 -47 dBm Harmonic 3. T B = MMIC Base Temperature Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.0 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (approxmately @ –1.8V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. 3/6 RO-P-DS-3071 1.6W S/C-Band Power Amplifier MAAPGM0035 50 50 POUT PAE 40 40 30 30 20 20 10 10 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 20 dBm. 50 50 POUT PAE 40 40 30 30 20 20 10 10 0 0 4 5 6 7 8 9 10 Drain Voltage (volts) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 4 GHz. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. 4/6 RO-P-DS-3071 1.6W S/C-Band Power Amplifier MAAPGM0035 50 VDD = 4 VDD = 8 VDD = 6 VDD = 10 40 30 20 10 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 6 Gain Input VSWR Output VSWR 25 5 20 4 15 3 10 2 5 1 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3071 1.6W S/C-Band Power Amplifier 5/6 MAAPGM0035 APGM0035 Figure 5. CR-15 Package Dimensions The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of electrolytic gold over nickel plate. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3071 1.6W S/C-Band Power Amplifier 6/6 MAAPGM0035 Figure 6. Recommended Bias Configuration 121 O VGG VDD 0.1 µF 0.1 µF 100 pF 100 pF 100 pF APGM0035 YWWLLLL RFIN RFOUT 100 pF Pin Number Description 1 No Connection 2 V GG 3 RF IN 4 V GG 5 No Connection 6 No Connection 7 V DD 8 RF OUT 9 V DD 10 No Connection Assembly Instructions: This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of the package to housing interface. Refer to M/A-COM Application Note #M567* for more information . For applications where surface mount components are to be installed after the CR-15 installation, this package will not be damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static discharge (ESD) safe. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. * Application Notes can be found by going to the Site Search Page on M/A-COM’s web page (http://www.macom.com/search/search.jsp) and searching for the required Application Note. Specifications subject to change without notice. Email: [email protected] n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information.