RO-P-DS-3066 - - MAAPGM0046-DIE 400mW Ku-Band Power Amplifier 15.5-18.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ 15.5-18.0 GHz GaAs MMIC Amplifier 400 mW Saturated Output Power Level 15.5-18.0 GHz Operation Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG® MESFET Process Primary Applications ♦ Point-to-Point Communications ♦ Ku Satellite Communications Description The MAAPGM0046-Die is a 3-stage 400mW power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. This process provides polyimide scratch protection. Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -1.8V, Pin = 12 dBm Parameter Symbol Typical Units Bandwidth f 15.5 -18.0 GHz Output Power POUT 26 dBm Power Added Efficiency PAE 11 % 1-dB Compression Point P1dB 25 dBm Small Signal Gain G 16 dB Input VSWR VSWR 3:1 Output VSWR VSWR 2:1 Gate Current IGG <2 mA Drain Current IDD < 600 mA Output Third Order Intercept OTOI 32 dBm Noise Figure NF 8 dB 3rd Order Intermodulation Distortion, Single Carrier Level = 18 dBm IM3 34 dBc 5th Order Intermodulation Distortion, Single Carrier Level = 18 dBm IM5 47 dBc 1. TB = MMIC Base Temperature RO-P-DS-3066 - - 400mW Ku-Band Power Amplifier MAAPGM0046-DIE Maximum Operating Conditions 1 Parameter Symbol Absolute Maximum Units Input Power PIN 17.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 660 mA PDISS 5.1 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C Quiescent DC Power Dissipated (No RF) 1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic 2/6 Symbol Min Typ Max Unit Drain Voltage VDD 4.0 8.0 10.0 V Gate Voltage VGG -2.3 -2.0 -1.5 V Input Power PIN 12.0 15.0 dBm Junction Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C - 15.8°C/W * VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -1.8 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ –1.8 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3066 - - 400mW Ku-Band Power Amplifier MAAPGM0046-DIE 40 28 POUT PAE 24 30 20 25 16 20 12 15 8 10 4 15.5 16.0 16.5 17.0 17.5 PAE (%) POUT (dBm) 35 5 15.0 0 18.0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 12dBm. 40 30 POUT PAE POUT (dBm) 35 25 30 20 25 15 20 10 15 5 10 0 5 -5 4 5 3/6 6 7 8 9 10 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 16.5 GHz. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3066 - - 400mW Ku-Band Power Amplifier 4/6 MAAPGM0046-DIE 40 VDD = 4 VDD = 8 35 VDD = 6 VDD = 10 P1dB (dBm) 30 25 20 15 10 5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 6 GAIN INPUT VSW R OUTPUT VSW R 5 20 4 15 3 10 2 VSWR Gain (dB) 25 5 15.0 15.5 16.0 16.5 17.0 17.5 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 1 18.0 RO-P-DS-3066 - - 400mW Ku-Band Power Amplifier MAAPGM0046-DIE Mechanical Information Chip Size: 3.000 x 1.824 x 0.075 mm (118 x 72 x 3 mils) 3.00mm. 2.87mm. 1.50mm. 0.14mm. 1.82mm. GND:G VDD 1.66mm. GN D :G GND:G GN D:G GN D :G G ND:G GND:G GND:G GND :G GND:G GND: G GN D :G GND :G GN D:G GN D:G GND:G GND :G GN D:G GN D:G GND:G GND :G GN D :G GN D:G GND:G G ND:G GN GND:G D:G GN GND :G GN D :G D:G GN D:G G N D :G 0.86mm. OUT GN D :G IN 0.86mm. GN D:G GN D:G GN D:G GND :G GN D:G GND :G GN D:G GND :G GND :G GND :G GN D:G G ND :G G ND :G GN D:G GN D:G GND :G GND :G GN GND :G D:G GND:G GND:G GND:G GND :G GN D:G GND:G GN D:G GND :G VGG GN D :G GND:G GN D:G GND:G 0.16mm. 5/6 0 1.50mm. 0 Figure 5. Die Layout Chip edge to bond pad dimensions are shown to the center of the bond pad. Bond Pad Dimensions Pad Size (µm) Size (mils) RF: IN, OUT 100 x 200 4x8 DC: VDD 200 x 150 8x6 DC: VGG 150 x 150 6x6 Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3066 - - 400mW Ku-Band Power Amplifier 6/6 MAAPGM0046-DIE VDD 0.1 µF 100 pF GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G GN D:G VDD GND:G GND:G GND:G D: G GND:G GN D:G GND:G GN D:G GN GND:G GN D:G GND:G GND:G GN D: G RFOUT GND:G RFIN GN D: G ND:G G D: GN GND :G G OUT GND:G GND:G GND :G GND:G IN GND:G GND:G GN D:G GN GND:G D: G GND :G GN D: G GND:G GND :G GND :G GND:G GND:G GND:G GN D:G GND:G GND :G GND :G GN D: GN D:G G GND:G GND:G GND:G GND:G GN D:G GND:G GND:G GND:G VGG GN D:G GND:G GND:G GND:G 100 pF 150 Ω VGG 0.1 µF Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information.