RO-P-DS-3046 - - MAAMGM0003-DIE 0.4W Variable Distributed Amplifier 1.0 – 15.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ ♦ 1.0 - 15.0 GHz GaAs MMIC Amplifier 1.0 to 15.0 GHz Operation 0.4 Watt Saturated Output Power Level Variable Gain Control Select at Test Biasing Variable Drain Voltage (5-8V) Operation Self-Aligned MSAG® MESFET Process Primary Applications ♦ EW ♦ Radar Description The MAAMGM0003-Die is a 0.4W Distributed Amplifier with on-chip bias networks and variable gain control. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/ A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET Process. This process features silicon oxyni- Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 7V, VGG = -2V, Pin = 20 dBm Parameter Symbol Typical Units Bandwidth f 1.0-15.0 GHz Output Power POUT 26 dBm Power Added Efficiency PAE 11 % 1-dB Compression Point P1dB 25 dBm Small Signal Gain G 7.5 dB Output TOI OTOI 39 dBm Input VSWR VSWR 2:1 Gate Current IGG <8 mA Drain Current IDD < 480 mA 1. TB = MMIC Base Temperature 2/7 RO-P-DS-3046 - - 0.4W Variable Distributed Amplifier MAAMGM0003-DIE Maximum Operating Conditions 1 Parameter Absolute Maximum Symbol Units Input Power PIN 25 dBm Drain Voltage VDD +8.0 V Gate Voltage, Primary VGG -3.0 V HI, MID, LO -5.0 V GATE 0 V IDQ 420 mA PDISS 3.4 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C Gate Voltage, Select at Test Gate Voltage, Control Quiescent Drain Current (No RF) Quiescent DC Power Dissipation (No RF) 1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit Drain Voltage VDD 5 7 8 V Gate Voltage, Primary VGG -2.4 -2.0 -1.6 V Gate Voltage, Select at Test HI, MID, LO Gate Voltage, Control GATE -5.0 -4 0 V 0 V Input Power PIN 23 dBm Junction Temperature TJ 150 °C MMIC Base Temperature TB Note 2 °C 2. Maximum MMIC Base Temperature = 150°C — 25.8 °C/W * VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 5 V. 3. Adjust VGG to set IDQ, (approximately @ –2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 0.4W Variable Distributed Amplifier 3/7 MAAMGM0003-DIE 40 POUT PAE 35 30 25 20 15 10 5 0 1 3 5 7 9 11 13 15 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 7V, Pin = 20dBm. 40 POUT PAE 35 30 25 20 15 10 5 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Drain Voltage (volts) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 9 GHz. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 0.4W Variable Distributed Amplifier 4/7 MAAMGM0003-DIE 40 35 30 25 20 15 VDD = 6 VDD = 5 10 VDD = 8 VDD = 7 5 1 3 5 7 9 11 13 15 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 6 10 GAIN 9 VSWR 5 8 7 4 6 5 3 4 3 2 2 1 1 0 1 3 5 7 9 11 13 15 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 7V. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 0.4W Variable Distributed Amplifier 5/7 MAAMGM0003-DIE 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 GATE=0V GATE=-2V GATE=-4V -55 -60 1 3 5 7 9 11 13 15 Frequency (GHz) Figure 5. Small Signal Gain vs. Frequency at MID=-5V, VDD = 5V. 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -4.0 -3.6 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 GATE Voltage (V) Figure 6. Small Signal Gain vs. GATE Voltage at fo = 9.05 GHz, MID=-5V, VDD = 5V. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3046 - - 0.4W Variable Distributed Amplifier 6/7 MAAMGM0003-DIE Mechanical Information Chip Size: 2.98 x 2.48 x 0.075 mm (118 x 98 x 3 mils) 2.853mm. 2.145mm. GATE 2.980mm. 0.622mm. VDD 2.480mm. 2.328mm. OUT IN 0.469mm. 2.004mm. MID LO VGG GND 2.050mm. 2.225mm. 2.525mm. HI 1.625mm. 0.152mm. 0 1.325mm. 0.127mm. 0 Figure 7. Die Layout Bond Pad Dimensions Pad Size (µm) Size (mils) RF In and Out 100 x 200 4x8 DC Drain Supply Voltage VDD 150 x 150 6x6 DC Gate Supply Voltage VGG 150 x 150 6x6 Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information. 7/7 RO-P-DS-3046 - - 0.4W Variable Distributed Amplifier MAAMGM0003-DIE VDD Gate Control 0.1 µF 0.1 µF 100 pF 100 pF VDD GATE RFOUT OUT RFIN IN HI MID LO VGG GND Pad Applied Voltage (V) % IDSS HI -5 ~50 MID -5 ~35 LO -5 ~25 VGG -2.4 to -1.6 Variable GATE -4.0 to 0.0 n/a 100 pF VGG 0.1 µF Figure 8. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes. Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Specifications subject to change without notice. Customer Service: Tel. (888)-563-3949 Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 V 1.00 Visit www.macom.com for additional data sheets and product information.