AVAGO HSDL-4270

HSDL-4270
High-Performance T-1¾ (5mm) AlGaAs Infrared (940nm) Lamp
Datasheet
Description
Features
The HSDL-4270 Infrared emitter was designed
for applications that require high power and
low forward voltage. It utilizes Aluminum
Galium Arsenide (AlGaAs) LED technology and
is optimized for efficiency at emission
wavelengths of 940 nm. The material used
produces high radiant efficiency over a wide
range of currents. The emitter is packaged in
clear T-1¾ (5mm) package.
• High Power AlGaAs LED Technology
5.0 ± 0.2
• T-1¾ Package
• Low Cost
• Low Forward Voltage: 1.3V at 20mA
Applications
• Industrial Infrared Equipments and Applications
(Smoke Detectors etc)
• Consumer Electronics (Infrared Remote Controller
etc)
• Infrared spotlight for cameras
1.14 ± 0.2
8.7 ± 0.2
• 940 nm Wavelength
• Discrete Interrupters
• Infrared source for optical counters and card readers
31.6 min.
5.8 ± 0.2
0.7 max.
2.54
1.0 min.
CATHODE
FLAT
0.50 ± 0.1
Part Number
Lead Form
Shipping Option
HSDL-4270
Straight
Bulk
Absolute Maximum Ratings at 25°°C
Parameter
Symbol
Minimum
Maximum
Unit
Reference
Peak Forward Current
IFPK
-
500
mA
Figure 3
Duty cycle = 20%
Pulse Width = 100us
Forward Current
IFDC
-
100
mA
[1]
Power Dissipation
PDISS
-
170
mW
Reverse Voltage
VR
5
-
V
Storage Temperature
TS
-40
100
°C
LED Junction Temperature
TJ
110
°C
260 for 5 sec
°C
Lead Soldering Temperature
IR=100uA
Notes:
1. Derate as shown in Figure 6.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TO
-40
85
°C
Reference
Electrical Characteristics at 25°° C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Forward Voltage
VF
-
1.3
1.5
1.4
1.7
V
IFDC=20mA
IFDC=100mA
Figure 2
Figure 3
Forward Voltage
Temperature Coefficient
∆V/∆T
-
-1.4
-
mV/°C
IFDC=100mA
Figure 4
Series Resistance
RS
-
3.0
-
Ohms
IFDC=100mA
Diode Capacitance
CO
-
27
-
pF
Vbias=0V,
f=1MHz
Thermal Resistance,
Junction to Ambient
Rθja
-
300
-
°C/W
Optical Characteristics at 25°°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Radiant On-Axis Intensity
IE
76
100
-
mW/Sr
IFDC=100mA
Figure 5
Radiant On-Axis Intensity
Temperature Coefficient
∆IE/∆T
-
-0.48
-
%/°C
IFDC=100mA
Viewing Angle
2θ1/2
-
15
-
°
Figure 7
Peak Wavelength
λpk
-
940
-
nm
Figure 1
Peak wavelength
Temperature Coefficient
∆λ/∆T
-
0.26
-
nm/°C
IFDC=100mA
Spectral Width
∆λ
45
-
nm
IFDC=20mA
Optical Rise and Fall Time
tr/tf
1.3
-
µs
IFDC=100mA
Duty Ratio = 50%
Pulse Width=10µs
2
Figure 1
Peak Wavelength Vs Rel Radiant Intensity
Forward Current - If(mA)
Relative Radiant Intensity
V-I Characteristics
100
1.2
1.0
0.8
0.6
0.4
0.2
0
800
10
1
850
900
950
Peak Wavelength - nm
0
1000
Figure 1. Relative Radiant Intensity vs. Wavelength
0.5
1
Forward Voltage - Vf(V)
1.5
Figure 2. DC Forward Current vs. Forward Voltage
Peak Forward Voltage Vs Peak Forward Current
Forward Voltage Vs Temperature
1.7
Forward Voltage
Peak Forward Current-Ifpk(mA)
1000
100
10
1.5
1.3
1.1
0.9
1
0
0.5
1
1.5
2
2.5
0.5
-40
Peak Forward Voltage-Vfpk(V)
Forward Current Vs Relative Radiant Intensity
1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
Forward Current in mA
0
20
40
60
Temperature
80
100
120
Maximum Permisible DC forward current vs. ambient temperature
110
100
300
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
TA- Ambient Temperature -˚C
Figure 6. DC Forward Current vs. Ambient Temperature Derated
Based on TJMAX =110°° C
IFDC MAX - Maximum DC
Forward Current - mA
Relative Radiant Intensity
1.2
0
-20
Figure 4. Forward Voltage vs. Ambient Temperature
Figure 3. Peak Forward Current vs. Forward Voltage
100
Figure 5. Relative Radiant Intensity vs. DC Forward Curren
3
at Iled=20mA
at Iled=100mA
0.7
120
Relative Radiant Intensity
4270-Angle Vs Relative Radiant Intensity
1.2
1.0
0.8
0.6
0.4
0.2
0
-90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Angle in degrees
Figure 7. Radiant Intensity vs. Angular Displacement
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Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
5989-4469EN - January3, 2006