LITEON HSDL-4260

HSDL-4260
High-Power T-1¾ (5mm) AlGaAs Infrared (875nm) Lamp
Datasheet
Description
Features
The HSDL-4260 High Power Infrared emitter
was designed for applications that require high
power, low forward voltage and high speed. It
utilizes Aluminum Galium Arsenide (AlGaAs)
LED technology and is optimized for speed and
efficiency at emission wavelengths of 875nm.
The material used produces high radiant
efficiency over a wide range of currents. The
emitter is packaged in clear T-1¾ (5mm)
package.
• High Power AlGaAs LED Technology
5.0 ± 0.2
• 875nm Wavelength
• T-1¾ Package
• Low Cost
• Low Forward Voltage: 1.4V at 20mA
• High Speed: 15ns Rise Times
Applications
• Industrial Infrared Equipments and applications
• Portable Infrared Instruments
• Consumer Electronics (Optical mouse, Infrared
Remote Controllers etc)
8.7 ± 0.2
1.14 ± 0.2
• High Speed Infrared Communications (IR LANs, IR
Modems, IR Dongles etc)
31.6 min.
5.8 ± 0.2
0.7 max.
2.54
1.0 min.
CATHODE
FLAT
0.50 ± 0.1
Part Number
Lead Form
Shipping Option
HSDL-4260
Straight
Bulk
Absolute Maximum Ratings at 25°°C
Parameter
Symbol
Minimum
Maximum
Unit
Reference
Peak Forward Current
IFPK
-
500
mA
Figure 3
Duty cycle = 20%
Pulse Width = 100us
Forward Current
IFDC
-
100
mA
[1]
Power Dissipation
PDISS
-
230
mW
Reverse Voltage
VR
4
-
V
Storage Temperature
TS
-40
100
°C
LED Junction Temperature
TJ
110
°C
260 for 5 sec
°C
Lead Soldering Temperature
IR=100uA
Notes: Derate as shown in Figure 6.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TO
-40
85
°C
Reference
Electrical Characteristics at 25°° C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Forward Voltage
VF
-
1.4
1.7
1.9
2.3
V
IFDC=20mA
IFDC=100mA
Figure 2
Forward Voltage
Temperature Coefficient
∆V/∆T
-
-1.3
-
mV/°C
IFDC=100mA
Figure 4
Series Resistance
RS
-
4
-
Ohms
IFDC=100mA
Diode Capacitance
CO
-
70
-
pF
Vbias=0V,
f=1MHz
Thermal Resistance,
Junction to Ambient
Rθja
-
300
-
°C/W
Optical Characteristics at 25°° C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Radiant On-Axis Intensity
IE
150
200
-
mW/Sr
IFDC=100mA
Figure 5
Radiant On-Axis Intensity
Temperature Coefficient
∆IE/∆T
-
-0.36
-
%/°C
IFDC=100mA
Viewing Angle
2θ1/2
-
15
-
°
Figure 7
Peak Wavelength
λpk
-
875
-
nm
Figure 1
Peak wavelength
Temperature Coefficient
∆λ/∆T
-
0.2
-
nm/°C
IFDC=100mA
Spectral Width
∆λ
45
-
nm
IFDC=20mA
Optical Rise and Fall Time
tr/tf
15
-
ns
IFDC=500mA
Duty Ratio = 20%
Pulse Width=100ns
2
Figure 1
Peak Wavelength Vs Relative Radiant Intensity
V-I Characteristics
100
If - Forward Current - (mA)
Relative Radiant Intensity
1.2
1.0
0.8
0.6
0.4
0.2
0
800
4260Vf-If
10
1
820
840
860
880
900
Peak Wavelength - nm
920
0
940
0.5
Figure 1. Relative Radiant Intensity vs. Wavelength
Forward Voltage Vs Temperature
1.7
Forward Voltage in Volts
Ifpk - Peak Forward Current - (mA)
2
1.8
1000
100
10
1.6
1.5
1.4
1.3
1.2
I-Led=20mA
I-Led=100mA
1.1
1
1
0
0.5
1
1.5
2
Vfpk - Peak Forward Voltage - (V)
2.5
Figure 3. Peak Forward Current vs. Forward Voltage
-25
0
25
50
75
Temperature in Degrees
100
I-Led Vs Relative Radiant Intensity at T=25˚C
Maximum Permisible DC forward current vs. ambient temperature
110
100
300
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
TA- Ambient Temperature -˚C
IFDC MAX - Maximum DC
Forward Current - mA
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
125
Figure 4. Forward Voltage vs. Ambient Temperature
1.2
Relative Radiant Intensity
1.5
Figure 2. DC Forward Current vs. Forward Voltage
Peak Forward VoltagePeak Forward Current
100
I-Led - mA
Figure 5. Relative Radiant Intensity vs. DC Forward Curren
3
1
Vf - Forward Voltage - (V)
120
Figure 6. DC Forward Current vs. Ambient Temperature Derated
Based on TJMAX =110°° C
Relative Radiant Intensity
Beam Intensity Vs Angle
1.2
1
0.8
0.6
0.4
0.2
0
-90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90
Angle in degrees
Figure 7. Radiant Intensity vs. Angular Displacement for HSDL-4260
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Data subject to change. Copyright © 2007 Lite-On Technology Corporation. All rights reserved.