1N6690-1N6693 and 1N6690US-1N6693US Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 20 AMP 600-1200 Volts 75 nsec ULTRA FAST RECTIFIER Part Number / Ordering Information 1/ 1N66 __ __ __ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ ⏐ L L Screening Package 2/ = None TX = TX Level TXV = TXV Level S = S Level ____ = Axial SMS = Surface Mount Square Tab L Voltage 90 = 600 V 91 = 800 V 92 = 1000 V 93 = 1200 V Features: • • • • • • • • • Replaces DO-4 and DO-5 Ultra Fast Recovery PIV to 1200 Volts Low Reverse Leakage Hermetically Sealed Void-Free Construction3/ Monolithic Single Chip Construction High Surge Rating Low Thermal Resistance Available in Surface Mount Versions (-US Suffix) and in Button Tab Mounting (See Data Sheet RU0129). • TX, TXV, and S-Level Screening Available2/ Maximum Ratings Peak Repetitive Reverse and DC Blocking Voltage 1N6690 & 1N6690US 1N6691 & 1N6691US 1N6692 & 1N6692US 1N6693 & 1N6693US Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 100ºC) Repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to Reach Equilibrium Between Pulses, TA = 25ºC) Operating & Storage Temperature Maximum Thermal Resistance Junction to Leads, L = 3/8 " Junction to End Tab Symbol Value Units VRRM VRWM VR 600 800 1000 1200 Volts Io 20 Amps IFSM 375 Amps Top & Tstg -65 to +175 ºC RθJL RθJE 3.0 2.5 ºC/W Notes: 1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory. 2/ Screening Based on MIL-PRF-19500. Specifics Available on Request. 3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500. Axial Leaded NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. SMS DATA SHEET #: RU0143D DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 1N6690-1N6693 and 1N6690US-1N6693US Electrical Characteristics Instantaneous Forward Voltage Drop (IF = 20 Adc, 300-500 µs pulse) Reverse Leakage Current (Rated VR, 300 µs pulse minimum) Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) Reverse Recovery Time (IF = 500 mA, IR = 1A, IRR = 250mA, TA = 25ºC) Case Outline: Axial NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TA = 25ºC TA = -55ºC TA = 25ºC TA = 100ºC Symbol Max VF1 IR1 IR2 1.9 2.2 10 2.0 CJ 250 pF trr 75 nsec VF2 Units Vdc μA mA Surface Mount Square Tab (SMS) DATA SHEET #: RU0143D DOC