SPD805SMS thru SPD830SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 8 AMP 50-300 VOLTS 40 nsec Hyper Fast Rectifier Designer’s Data Sheet Part Number/Ordering Information 1/ SPD __ __ __ • • • • • • • • • │ │ └ Screening 2/ │ │ __ = Not Screened │ │ TX = TX Level │ │ TXV = TXV │ │ S = S Level │ │ │ └ Package Type │ SMS = Surface Mount Square Tab │ │ └ Voltage/Family 805 = 50V 810 = 100 V 820 = 200 V 830 = 300 V FEATURES: Hyper Fast Recovery: 40 nsec maximum PIV to 300 Volts Hermetically Sealed Void Free Construction For High Efficiency Applications Low Forward Voltage Drop Square Tab Surface Mount Package Replaces 1N5811 types 2/ TX, TXV, and Space Level Screening Available MAXIMUM RATINGS SPD805SMS SPD810SMS SPD820SMS SPD830SMS Peak Repetitive Reverse Voltage and DC Blocking Voltage Average Rectified Forward Current (Resistive Load, 60 Hz, Sine Wave, TA = 25°C) Peak Surge Current (8.3 ms Pulse, Half Sine Wave Superimposed on IO, allow junction to reach equilibrium between pulses, TA =25oC) Operating and Storage Temperature Maximum Thermal Resistance Junction to End Tab Symbol Value Units VRRM VRWM VR 50 100 200 300 Volts IO 8 Amps IFSM 125 Amps TOP & Tstg -65 to +175 RθJE 12 o C o C/W Square Tab Surface Mount (SMS) NOTES: 1/ For Ordering Information, Price, and Availability- Contact Factory. 2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0093C DOC SPD805SMS thru SPD830SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com ELECTRICAL CHARACTERISTICS Symbol Max Unit VF1 1.00 Vdc VF2 1.10 Vdc IR1 IR2 20 1 μA mA trr 40 ns CJ 100 pF Instantaneous Forward Voltage Drop (IF = 8 Adc, TA = 25oC, 300Μs pulse) Instantaneous Forward Voltage Drop (IF = 8 Adc, TA = -55oC, 300Μs pulse) Reverse Leakage Current (At Rated VR, 300Μs pulse minimum) TA = 25oC TA = 100oC Reverse Recovery Time (IF = 500 mA, IR = 1 A, IRR = 250 mA, TA = 25oC) Junction Capacitance (VR = 10 VDC, TA = 25oC, f = 1 MHz) Case Outline: (SMS) DIM A B C D MIN 0.172” 0.220” 0.020” 0.002” MAX 0.180” 0.290” 0.035” –– Note: Dimensions prior to soldering. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0093C DOC