2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.) High forward transfer admittance: ⎪Yfs⎪ = 9 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 150 V) Enhancementmode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 150 V Drain-gate voltage (RGS = 20 kΩ) VDGR 150 V Gate-source voltage VGSS ±30 V (Note 1) ID 30 Pulse (Note 1) IDP 120 Drain power dissipation (Tc = 25°C) PD 125 W Single pulse avalanche energy (Note 2) EAS 468 mJ Avalanche current IAR 30 A Repetitive avalanche energy (Note 3) EAR 12.5 Channel temperature Tch Storage temperature range Tstg DC Drain current A JEDEC ― JEITA SC-97 mJ TOSHIBA 2-9F1B 150 °C Weight: 0.74 g (typ.) −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Circuit Configuration Symbol Max Unit Notice: Rth (ch-c) 1.00 °C/W Please use the S1 pin for gate input signal return. Make sure that the main current flows into the S2 pin. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2 VDD = 50 V, Tch = 25°C (initial), L = 773 μH, RG = 25 Ω, IAR = 30 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 4 1 2 3 1 2006-11-20 2SK3443 Electrical Characteristics (Note 4) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 150 V, VGS = 0 V ⎯ ⎯ 100 μA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 150 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 15 A ⎯ 50 55 mΩ Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 15 A 4.5 9 ⎯ S ⎯ 2030 ⎯ ⎯ 340 ⎯ ⎯ 1200 ⎯ ⎯ 20 ⎯ ⎯ 40 ⎯ ⎯ 10 ⎯ ⎯ 40 ⎯ ⎯ 45 ⎯ ⎯ 21 ⎯ ⎯ 24 ⎯ Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Turn-on time ID = 15 A 10 V VGS1 tr G Switching time Fall time tf Turn-off time VOUT D 0V ton S1 toff RL = 5.0 Ω 4.7 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz S2 Duty < = 1%, tw = 10 μs Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ∼ − 75 V VDD ∼ − 120 V, VGS = 10 V, ID = 30 A pF ns nC Note 4: Connect the S1 and S2 pins together, and ground them except during switching time measurement. Source-Drain Diode Ratings and Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 5) IDR1 ⎯ ⎯ ⎯ 30 A Pulse drain reverse current (Note 1, Note 5) IDRP1 ⎯ ⎯ ⎯ 120 A Continuous drain reverse current (Note 1, Note 5) IDR2 ⎯ ⎯ ⎯ 1 A Pulse drain reverse current (Note 1, Note 5) IDRP2 ⎯ ⎯ ⎯ 4 A Forward voltage (diode) VDS2F ⎯ ⎯ −1.5 V IDR1 = 30 A, VGS = 0 V Reverse recovery time trr IDR = 30 A, VGS = 0 V, ⎯ 250 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 1.75 ⎯ μC Note 5: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open. Unless otherwise specified, connect the S1 and S2 pins together, and ground them. Marking Part No. (or abbreviation code) K3443 Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-20 2SK3443 ID – VDS Common source Tc = 25°C Pulse test Drain current ID (A) 40 ID – VDS 100 15 Common source Tc = 25°C 80 Pulse test 10 9.5 Drain current ID (A) 50 9 30 8.5 20 8 7.5 10 15 12 11 60 10 40 9 20 8 VGS = 7 V 0 0 1 2 3 4 Drain-source voltage VGS = 7 V 0 5 0 4 VDS (V) 8 Drain-source voltage ID – VGS VDS (V) Drain-source voltage 30 25 100 10 Common source Tc = 25°C Pulse test 4 3 2 ID = 30 A 1 15 7.5 Tc = −55°C 0 0 4 8 12 Gate-source voltage 16 0 0 20 4 VGS (V) 8 Drain-source on resistance RDS (ON) (mΩ) (S) Forward transfer admittance ⎪Yfs⎪ 16 20 VGS (V) RDS (ON) – ID 1 Common source VDS = 10 V Pulse test 25 10 Tc = −55°C 100 1 1 12 Gate-source voltage ⎪Yfs⎪ – ID 100 0.1 0.1 20 VDS (V) 5 Common source VDS = 10 V Pulse test 40 Drain current ID (A) 16 VDS – VGS 50 20 12 10 0.1 VGS = 10 V 15 0.01 0.001 1 100 Drain current ID (A) Common source Tc = 25°C Pulse test 3 5 10 30 50 100 300 500 1000 Drain current ID (A) 3 2006-11-20 2SK3443 IDR – VDS 1000 Common source 0.18 VGS = 10 V Pulse test 0.16 Common source (A) Tc = 25°C Drain reverse current IDR 0.14 0.12 ID = 30 A 0.1 ID = 15 A 0.08 ID = 7.5 A 0.06 0.04 Pulse test 100 10 10 V 5V VGS = 0 V 3V 0.02 −40 0 40 80 Case temperature Tc 120 1 0 160 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 (°C) Drain-source voltage Capacitance – VDS Vth – Tc 6 30000 Vth (V) 5000 3000 Ciss Gate threshold voltage Capacitance C (pF) 10000 1000 500 300 Coss 100 50 Common source 30 VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 1 Crss 3 10 30 Drain-source voltage 100 300 5 4 3 2 1 −40 VDS (V) 0 40 80 Case temperature Tc PD – Tc 120 160 (°C) Dynamic input/output characteristics VDS (V) 200 160 120 Drain-source voltage Drain power dissipation PD (W) Common source VDS = 10 V ID = 1 mA Pulse test 0 −80 1000 200 80 40 10 0 VDS (V) 40 80 120 Case temperature Tc 160 160 120 (°C) VDS 16 12 VDD = 120 V 60 V 30 V 80 8 VGS 4 40 0 0 200 20 Common source ID = 30 A Tc = 25°C Pulse test 20 40 60 80 VGS (V) 0 −80 Gate-source voltage Drain-source on resistance RDS (ON) (mΩ) RDS (ON) – Tc 0.2 0 100 Total gate charge Qg (nC) 4 2006-11-20 2SK3443 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 0.02 0.01 T Duty = t/T Rth (ch-c) = 1.0°C/W Single pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse width 0.1 tw 1 10 (S) Safe operating area EAS – Tch 300 500 Avalanche energy EAS (mJ) ID max (pulsed) * 100 100 μs * 30 Drain current ID (A) 1 ms * 10 DC operation Tc = 25°C 400 300 200 100 3 0 25 50 1 75 100 125 150 Channel temperature (initial) Tch (°C) * Single nonrepetitive pulse 0.3 Tc = 25°C Curves must be derated linearly 15 V with increase in temperature. 0.1 1 3 10 VDSS max 30 Drain-source voltage 100 BVDSS IAR −15 V 300 VDD VDS (V) Test circuit RG = 25 Ω VDD = 50 V, L = 773 μH 5 VDS Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2006-11-20 2SK3443 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-20