APTGF25DSK120T3 Dual Buck chopper NPT IGBT Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 10 19 22 7 23 8 CR1 CR2 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single buck of twice the current capability. Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 40 25 100 ±20 208 Tj = 125°C 50A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V January, 2005 11 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF25DSK120T3 – Rev 0 18 2 VCES = 1200V IC = 25A @ Tc = 80°C APTGF25DSK120T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Min Tj = 25°C Tj = 125°C T VGE =15V j = 25°C IC = 25A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V VGE = 0V VCE = 1200V Test Conditions VGE = 0V VCE = 25V f = 1MHz 2.5 Typ Max Unit 1 1 3.2 4.0 500 µA mA 4 Min VGE = 15V VBus = 300V IC =25A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 25A R G = 22Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 25A R G = 22Ω Typ 1650 250 110 160 10 70 60 50 305 3.7 V 6 400 V nA Max Unit pF nC ns 30 60 50 346 40 3.5 1.5 ns mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 VRRM Test Conditions Min Maximum Reverse Leakage Current VR=1200V Tj = 25°C Tj = 125°C IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Max 1200 Maximum Peak Repetitive Reverse Voltage IRM VF Typ V 250 500 Tj = 125°C 60 2 2.3 1.8 Tj = 25°C 400 di/dt =200A/µs Tj = 125°C 470 IF = 60A VR = 800V Tj = 25°C 1.2 Tj = 125°C 4 IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs APT website – http://www.advancedpower.com Unit µA A 2.5 January, 2005 Symbol Characteristic V ns µC 2-6 APTGF25DSK120T3 – Rev 0 Reverse diode ratings and characteristics APTGF25DSK120T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = R 25 Max Unit kΩ K Min Typ Max 0.6 0.9 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 68 4080 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 °C/W V 150 125 100 4.7 110 °C N.m g Package outline 12 APT website – http://www.advancedpower.com 3-6 APTGF25DSK120T3 – Rev 0 January, 2005 28 17 1 APTGF25DSK120T3 Typical Performance Curve T J=25°C Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 70 60 50 TJ=125°C 40 30 20 10 1 2 3 4 5 6 7 VCE, Collector to Emitter Voltage (V) 8 TJ=125°C 4 0 8 VGE, Gate to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle 100 80 60 40 TJ=125°C 20 TJ=25°C 0 2.5 5 7.5 10 12.5 V GE, Gate to Emitter Voltage (V) T J = 125°C 8 250µs Pulse Test < 0.5% Duty cycle 7 Ic=50A 6 5 Ic=25A 4 3 2 Ic=12.5A 1 0 9 10 11 12 13 14 15 1.5 2 2.5 3 3.5 IC = 25A 16 V CE =240V TJ = 25°C V CE=600V 14 12 10 V CE=960V 8 6 4 2 0 0 30 60 90 120 150 180 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 9 1 Gate Charge 18 15 16 VCE, Collector to Emitter Voltage (V) 0 0.5 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 120 Ic, Collector Current (A) 12 6 On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 5 4 Ic=12.5A 2 1 0 -50 60 Ic, DC Collector Current (A) 1.05 1.00 0.95 0.90 0.85 0.80 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 50 January, 2005 Breakdown Voltage vs Junction Temp. Ic=25A 3 VGE, Gate to Emitter Voltage (V) 1.10 Ic=50A 40 30 20 10 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF25DSK120T3 – Rev 0 0 Collector to Emitter Breakdown Voltage (Normalized) TJ=25°C 250µs Pulse Test < 0.5% Duty cycle 16 0 0 VCE, Collector to Emitter Voltage (V) Output Characteristics (VGE=10V) 20 Ic, Collector Current (A) Ic, Collector Current (A) 80 APTGF25DSK120T3 Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V R G = 22Ω 70 65 VGE = 15V 60 55 50 5 15 25 35 45 400 VGE =15V, TJ=125°C 350 300 VCE = 600V RG = 22Ω 200 55 5 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 600V R G = 22Ω 120 45 tf, Fall Time (ns) tr, Rise Time (ns) 35 45 55 Current Fall Time vs Collector Current 80 VGE=15V 40 0 5 TJ = 125°C 40 35 TJ = 25°C 30 15 25 35 45 VCE = 600V, VGE = 15V, R G = 22Ω 20 55 5 ICE, Collector to Emitter Current (A) VCE = 600V RG = 22Ω 8 TJ=125°C, VGE =15V 6 4 TJ=25°C, VGE=15V 2 0 55 4 VCE = 600V VGE = 15V RG = 22Ω 3 TJ = 125°C 2 TJ = 25°C 1 0 5 15 25 35 45 ICE, Collector to Emitter Current (A) 55 5 Switching Energy Losses vs Gate Resistance 15 25 35 45 ICE, Collector to Emitter Current (A) 55 Minimum Switching Safe Operating Area 60 IC, Collector Current (A) Eon, 25A 3 Eoff, 25A 2 1 0 50 40 January, 2005 VCE = 600V VGE = 15V TJ= 125°C 4 15 25 35 45 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 10 Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 25 50 25 Switching Energy Losses (mJ) 15 ICE, Collector to Emitter Current (A) 160 5 VGE =15V, T J=25°C 250 30 20 10 0 0 10 20 30 40 Gate Resistance (Ohms) 50 60 0 400 800 1200 VCE, Collector to Emitter Voltage (V) APT website – http://www.advancedpower.com 5-6 APTGF25DSK120T3 – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 75 APTGF25DSK120T3 Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 100 80 ZVS V CE = 600V D = 50% RG = 22Ω TJ = 125°C TC = 75°C 60 40 ZCS 20 Hard switching 0 0 10 20 30 IC, Collector Current (A) 40 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (°C/W) 50 Operating Frequency vs Collector Current 120 0.6 0.9 0.5 0.7 0.4 0.3 0.2 0.1 0.3 0.1 Single Pulse 0.05 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) 0.1 1 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF25DSK120T3 – Rev 0 January, 2005 0 0.00001 0.5