MICROSEMI APTGF50TA120PG

APTGF50TA120PG
VBUS1
VBUS2
VBUS3
G1
G3
G5
E1
E3
U
G2
E4
E6
0/VBUS2
0/VBUS3
VBUS 2
G1
U
W
G6
VBUS 1
0/VBUS 1
E5
G4
E2
0/VBUS1
V
E1
VBUS 3
G3
0/VBUS 2
E3
G5
0/VBUS 3
E5
E2
E4
E6
G2
G4
G6
V
W
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
• RoHS compliant
Absolute maximum ratings
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
1200
75
50
150
±20
312
100A @ 1200V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APTGF50TA120PG – Rev 1 July, 2006
Triple phase leg
NPT IGBT Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
APTGF50TA120PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Turn-off Delay Time
Tf
Td(on)
Tr
Fall Time
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
VF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
4.5
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 5 Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 5 Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 50A
Tj = 125°C
RG = 5 Ω
Chopper diode ratings and characteristics
IF = 60A
IF = 120A
IF = 60A
IF = 60A
VR = 800V
di/dt =200A/µs
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Typ
3450
330
220
330
35
200
35
Max
250
500
3.7
Unit
6.5
100
V
nA
Max
Unit
µA
V
pF
nC
65
ns
320
30
35
65
ns
360
40
6.9
mJ
3.05
Min
1200
Tj = 25°C
Tj = 125°C
Tc = 70°C
Typ
3.2
4.0
VGS = 15V
VBus = 600V
IC = 50A
Rise Time
Td(off)
Test Conditions
VGE = 0V
Tj = 25°C
VCE = 1200V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 50A
Tj = 125°C
VGE = VCE, IC = 1 mA
VGE = 20 V, VCE = 0V
Typ
Max
250
500
Tj = 125°C
60
2.0
2.3
1.8
Tj = 25°C
400
Tj = 125°C
Tj = 25°C
Tj = 125°C
470
1200
4000
Unit
V
µA
A
2.5
V
ns
nC
2-6
APTGF50TA120PG – Rev 1 July, 2006
Symbol Characteristic
APTGF50TA120PG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
2500
-40
-40
-40
3
Typ
Max
0.4
0.9
Unit
°C/W
V
150
125
100
5
250
°C
N.m
g
SP6-P Package outline (dimensions in mm)
5 places (3:1)
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3-6
APTGF50TA120PG – Rev 1 July, 2006
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTGF50TA120PG
Typical Performance Curve
Output characteristics (V GE=15V)
250µs Pulse Test
< 0.5% Duty cycle
T J=25°C
160
120
TJ=125°C
80
40
2
4
6
VCE, Collector to Emitter Voltage (V)
30
20
TJ =125°C
10
0
8
1
2
3
VCE, Collector to Emitter Voltage (V)
VGE, Gate to Emitter Voltage (V)
TJ=25°C
200
150
100
TJ=125°C
50
TJ=25°C
0
0
4
8
12
VGE, Gate to Emitter Voltage (V)
7
6
5
Ic=100A
3
2
Ic=25A
1
0
9
VCE=600V
12
10
VCE =960V
8
6
4
2
0
50
100
150
200
250
300
350
Gate Charge (nC)
Ic=50A
4
14
0
VCE, Collector to Emitter Voltage (V)
T J = 25°C
250µs Pulse Test
< 0.5% Duty cycle
8
VCE =240V
IC = 50A
TJ = 25°C
16
16
On state Voltage vs Gate to Emitter Volt.
9
18
10
11
12
13
14
15
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Junction Temperature
6
3
1
0
90
1.15
80
Ic, DC Collector Current (A)
1.20
1.00
0.95
0.90
0.85
0.80
0.75
0.70
Ic=25A
2
-50
Breakdown Voltage vs Junction Temp.
Ic=100A
Ic=50A
4
16
1.10
1.05
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
5
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
70
60
50
40
30
20
10
0
-50
-25
0
25
50
75 100
TJ, Junction Temperature (°C)
125
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-50
-25
0
25 50
75 100 125 150
TC, Case Temperature (°C)
4-6
APTGF50TA120PG – Rev 1 July, 2006
250µs Pulse Test
< 0.5% Duty cycle
250
4
Gate Charge
Transfer Characteristics
300
Ic, Collector Current (A)
T J=25°C
0
0
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
40
0
Collector to Emitter Breakdown Voltage
(Normalized)
Output Characteristics (VGE=10V)
50
Ic, Collector Current (A)
Ic, Collector Current (A)
200
APTGF50TA120PG
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
45
VCE = 600V
R G = 5Ω
40
VGE = 15V
35
30
25
0
25
50
75
100
400
VGE=15V,
TJ=125°C
350
300
VGE=15V,
TJ=25°C
250
VCE = 600V
RG = 5Ω
200
125
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
50
75
100
125
Current Fall Time vs Collector Current
50
180
VCE = 600V
RG = 5Ω
140
tf, Fall Time (ns)
tr, Rise Time (ns)
25
ICE, Collector to Emitter Current (A)
100
VGE=15V
60
TJ = 125°C
40
30
TJ = 25°C
VCE = 600V, VGE = 15V, R G = 5Ω
20
20
125
VCE = 600V
R G = 5Ω
24
TJ=125°C,
VGE=15V
20
16
12
TJ=25°C,
VGE =15V
8
4
0
25
50
75
100
ICE, Collector to Emitter Current (A)
14
12
Eon, 50A
10
Eoff, 50A
8
6
Eon, 25A
4
2
6
Eoff, 25A
0
TJ = 125°C
4
TJ = 25°C
2
0
0
Switching Energy Losses (mJ)
16
VCE = 600V
VGE = 15V
R G = 5Ω
25
50
75
100
ICE, Collector to Emitter Current (A)
125
Switching Energy Losses vs Junction Temp.
8
VCE = 600V
VGE = 15V
TJ= 125°C
125
8
125
Switching Energy Losses vs Gate Resistance
18
25
50
75
100
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
Turn-On Energy Loss vs Collector Current
28
0
Switching Energy Losses (mJ)
0
VCE = 600V
VGE = 15V
RG = 5Ω
6
Eon, 50A
4
Eoff, 50A
Eon, 25A
2
Eoff, 25A
0
0
10
20
30
40
Gate Resistance (Ohms)
50
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0
25
50
75
100
TJ, Junction Temperature (°C)
125
5-6
APTGF50TA120PG – Rev 1 July, 2006
25
50
75
100
ICE, Collector to Emitter Current (A)
Eoff, Turn-off Energy Loss (mJ)
Eon, Turn-On Energy Loss (mJ)
0
APTGF50TA120PG
Cies
1000
Coes
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
80
60
40
20
0
50
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
0.4
100
Cres
100
Thermal Impedance (°C/W)
Reverse Bias Safe Operating Area
120
IC , Collector Current (A)
C, Capacitance (pF)
Capacitance vs Collector to Emitter Voltage
10000
0.9
0.35
0.3
0.25
0.7
0.5
0.2
0.15
0.1
0.05
0.3
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
100
80
ZVS
VCE = 600V
D = 50%
RG = 5Ω
TJ = 125°C
TC= 75°C
60
ZCS
40
20
Hard
switching
0
10
20
30
40
50
IC, Collector Current (A)
60
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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6-6
APTGF50TA120PG – Rev 1 July, 2006
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120