ADPOW APTGF50H60T3G

APTGF50H60T3G
Full - Bridge
NPT IGBT Power Module
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
13 14
19
Q2
22
7
23
8
CR2
26
Q3
11
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
- Symmetrical design
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
10
Q4
CR4
4
27
3
29
30
31
15
32
16
R1
28 27 26 25
20 19 18
23 22
29
16
30
15
31
14
32
13
2
3
4
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
• RoHS compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
65
50
230
±20
250
Tj = 125°C
100A @ 500V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
November, 2005
CR3
CR1
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF50H60T3G – Rev 1
Q1
18
VCES = 600V
IC = 50A @ Tc = 80°C
APTGF50H60T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Reverse diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
Min
Tj = 25°C
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 50A
Tj = 125°C
VGE = VCE , IC = 1mA
VGE = 20V, VCE = 0V
VGE = 0V
VCE = 600V
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGE = 15V
VBus = 300V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
R G = 2.7Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
R G = 2.7Ω
Test Conditions
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max
Unit
1
1
2.0
2.2
500
µA
mA
4
Min
Typ
2200
323
200
166
20
100
40
9
120
2.45
6
400
V
nA
Max
Unit
pF
nC
ns
42
10
130
21
0.5
1
Typ
ns
Max
600
VR=600V
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 400V
di/dt =200A/µs
250
500
Tj = 125°C
30
1.6
1.9
1.4
Tj = 25°C
85
Tj = 125°C
Tj = 25°C
160
130
Tj = 125°C
700
APT website – http://www.advancedpower.com
Unit
V
Tj = 25°C
Tj = 125°C
Tc = 70°C
V
12
Min
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
1.7
Typ
µA
A
1.8
V
November, 2005
Test Conditions
ns
nC
2-6
APTGF50H60T3G – Rev 1
Symbol Characteristic
APTGF50H60T3G
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT =
R 25
Max
Unit
kΩ
K
Min
Typ
Max
0.5
1.2
Unit
T: Thermistor temperature
Symbol Characteristic
VISOL
TJ
TSTG
TC
Torque
Wt
Typ
50
3952

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

Thermal and package characteristics
RthJC
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
2500
-40
-40
-40
1.5
°C/W
V
150
125
100
4.7
110
°C
N.m
g
12
APT website – http://www.advancedpower.com
3-6
APTGF50H60T3G – Rev 1
28
17
1
November, 2005
SP3 Package outline (dimensions in mm)
APTGF50H60T3G
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
150
T J=-55°C
250µs Pulse Test
< 0.5% Duty cycle
Ic, Collector Current (A)
TJ=25°C
100
TJ=125°C
50
0
250µs Pulse Test
< 0.5% Duty cycle
100
TJ=25°C
50
TJ=125°C
0
0
1
2
3
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
100
75
50
TJ=125°C
25
TJ=-55°C
T J=25°C
0
1
2
3 4
5
6 7
8
9
VGE, Gate to Emitter Voltage (V)
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=100A
5
4
3
Ic=50A
2
1
Ic=25A
0
6
8
10
12
14
VGE, Gate to Emitter Voltage (V)
VCE=480V
10
8
6
4
2
0
0
25
50
75
100 125
150
175 200
On state Voltage vs Junction Temperature
4
3.5
Ic=100A
3
2.5
Ic=50A
2
1.5
Ic=25A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
16
-50
Breakdown Voltage vs Junction Temp.
-25
0
25
50
75 100
TJ, Junction Temperature (°C)
125
DC Collector Current vs Case Temperature
80
Ic, DC Collector Current (A)
1.20
1.10
1.00
0.90
0.80
0.70
-50
VCE=300V
12
Gate Charge (nC)
On state Voltage vs Gate to Emitter Volt.
8
14
10
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
0
VCE=120V
IC = 50A
TJ = 25°C
16
-25
0
25
50
75
100
TJ, Junction Temperature (°C)
125
70
60
November, 2005
125
4
Gate Charge
18
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
150
Collector to Emitter Breakdown
Voltage (Normalized)
TJ=-55°C
50
40
30
20
10
0
-50 -25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4-6
APTGF50H60T3G – Rev 1
Ic, Collector Current (A)
150
APTGF50H60T3G
Turn-Off Delay Time vs Collector Current
td(off), Turn-Off Delay Time (ns)
V GE = 15V
50
40
Tj = 125°C
V CE = 400V
R G = 2.7Ω
30
20
0
25
50
75
100
125
200
175
150
V GE=15V,
TJ=125°C
125
100
50
150
0
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 400V
RG = 2.7Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
V GE=15V,
TJ=125°C
125
150
40
TJ = 125°C
30
20
TJ = 25°C
0
0
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
0
150
Turn-On Energy Loss vs Collector Current
TJ=125°C,
V GE=15V
V CE = 400V
R G = 2.7Ω
1.5
Eoff, Turn-off Energy Loss (mJ)
2
Eon, Turn-On Energy Loss (mJ)
100
10
10
1
0.5
0
0
25
50
75
100
125
2.5
25
50
75
100
125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
V CE = 400V
V GE = 15V
R G = 2.7Ω
2
TJ = 125°C
1.5
1
0.5
0
150
0
ICE, Collector to Emitter Current (A)
25
50
75
100
125
150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
3
120
V CE = 400V
V GE = 15V
TJ= 125°C
Eon, 50A
2
1.5
Eoff, 50A
1
0.5
100
80
November, 2005
2.5
IC , Collector Current (A)
Switching Energy Losses (mJ)
75
V CE = 400V, VGE = 15V, RG = 2.7Ω
50
40
20
50
Current Fall Time vs Collector Current
60
30
25
ICE, Collector to Emitter Current (A)
60
50
V GE=15V,
TJ=25°C
V CE = 400V
RG = 2.7Ω
75
60
40
20
Eon, 50A
0
0
0
5
10
15
20
Gate Resistance (Ohms)
25
0
200
400
600
VCE, Collector to Emitter Voltage (V)
APT website – http://www.advancedpower.com
5-6
APTGF50H60T3G – Rev 1
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
60
APTGF50H60T3G
Capacitance vs Collector to Emitter Voltage
Fmax, Operating Frequency (kHz)
C, Capacitance (pF)
10000
Cies
1000
Coes
Cres
100
0
10
20
30
40
50
240
Operating Frequency vs Collector Current
VCE = 400V
D = 50%
R G = 2.7Ω
TJ = 125°C
TC= 75°C
200
160
120
80
ZCS
ZVS
hard
switching
40
0
0
VCE, Collector to Emitter Voltage (V)
20
40
60
80
100
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
1
10
November, 2005
0
0.00001
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTGF50H60T3G – Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein