APTGF50H60T3G Full - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 19 Q2 22 7 23 8 CR2 26 Q3 11 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 10 Q4 CR4 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 65 50 230 ±20 250 Tj = 125°C 100A @ 500V TC = 25°C TC = 80°C TC = 25°C Unit V November, 2005 CR3 CR1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF50H60T3G – Rev 1 Q1 18 VCES = 600V IC = 50A @ Tc = 80°C APTGF50H60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM Min Tj = 25°C Tj = 125°C T VGE =15V j = 25°C IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V VGE = 0V VCE = 600V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A R G = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A R G = 2.7Ω Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max Unit 1 1 2.0 2.2 500 µA mA 4 Min Typ 2200 323 200 166 20 100 40 9 120 2.45 6 400 V nA Max Unit pF nC ns 42 10 130 21 0.5 1 Typ ns Max 600 VR=600V IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/µs 250 500 Tj = 125°C 30 1.6 1.9 1.4 Tj = 25°C 85 Tj = 125°C Tj = 25°C 160 130 Tj = 125°C 700 APT website – http://www.advancedpower.com Unit V Tj = 25°C Tj = 125°C Tc = 70°C V 12 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 1.7 Typ µA A 1.8 V November, 2005 Test Conditions ns nC 2-6 APTGF50H60T3G – Rev 1 Symbol Characteristic APTGF50H60T3G Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.5 1.2 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 1.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 APT website – http://www.advancedpower.com 3-6 APTGF50H60T3G – Rev 1 28 17 1 November, 2005 SP3 Package outline (dimensions in mm) APTGF50H60T3G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 150 T J=-55°C 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) TJ=25°C 100 TJ=125°C 50 0 250µs Pulse Test < 0.5% Duty cycle 100 TJ=25°C 50 TJ=125°C 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 100 75 50 TJ=125°C 25 TJ=-55°C T J=25°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=100A 5 4 3 Ic=50A 2 1 Ic=25A 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) VCE=480V 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 On state Voltage vs Junction Temperature 4 3.5 Ic=100A 3 2.5 Ic=50A 2 1.5 Ic=25A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 16 -50 Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 80 Ic, DC Collector Current (A) 1.20 1.10 1.00 0.90 0.80 0.70 -50 VCE=300V 12 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 8 14 10 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) 0 VCE=120V IC = 50A TJ = 25°C 16 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 70 60 November, 2005 125 4 Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 150 Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF50H60T3G – Rev 1 Ic, Collector Current (A) 150 APTGF50H60T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) V GE = 15V 50 40 Tj = 125°C V CE = 400V R G = 2.7Ω 30 20 0 25 50 75 100 125 200 175 150 V GE=15V, TJ=125°C 125 100 50 150 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V RG = 2.7Ω tf, Fall Time (ns) tr, Rise Time (ns) V GE=15V, TJ=125°C 125 150 40 TJ = 125°C 30 20 TJ = 25°C 0 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 0 150 Turn-On Energy Loss vs Collector Current TJ=125°C, V GE=15V V CE = 400V R G = 2.7Ω 1.5 Eoff, Turn-off Energy Loss (mJ) 2 Eon, Turn-On Energy Loss (mJ) 100 10 10 1 0.5 0 0 25 50 75 100 125 2.5 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Turn-Off Energy Loss vs Collector Current V CE = 400V V GE = 15V R G = 2.7Ω 2 TJ = 125°C 1.5 1 0.5 0 150 0 ICE, Collector to Emitter Current (A) 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 3 120 V CE = 400V V GE = 15V TJ= 125°C Eon, 50A 2 1.5 Eoff, 50A 1 0.5 100 80 November, 2005 2.5 IC , Collector Current (A) Switching Energy Losses (mJ) 75 V CE = 400V, VGE = 15V, RG = 2.7Ω 50 40 20 50 Current Fall Time vs Collector Current 60 30 25 ICE, Collector to Emitter Current (A) 60 50 V GE=15V, TJ=25°C V CE = 400V RG = 2.7Ω 75 60 40 20 Eon, 50A 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 200 400 600 VCE, Collector to Emitter Voltage (V) APT website – http://www.advancedpower.com 5-6 APTGF50H60T3G – Rev 1 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APTGF50H60T3G Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes Cres 100 0 10 20 30 40 50 240 Operating Frequency vs Collector Current VCE = 400V D = 50% R G = 2.7Ω TJ = 125°C TC= 75°C 200 160 120 80 ZCS ZVS hard switching 40 0 0 VCE, Collector to Emitter Voltage (V) 20 40 60 80 100 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 November, 2005 0 0.00001 APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF50H60T3G – Rev 1 APT reserves the right to change, without notice, the specifications and information contained herein