APTGF50TDU120P Triple dual Common Source VCES = 1200V IC = 50A @ Tc = 80°C NPT IGBT Power Module G1 G3 E1 G5 E5 E3 E3/E4 E1/E2 E5/E6 E2 E4 E6 G2 G4 G6 C2 C4 C1 C6 C3 G1 E1/E2 C2 E1 C5 G5 G3 E3/E4 E3 E5/E6 IC ICM VGE PD RBSOA E5 E2 E4 E6 G2 G4 G6 C4 C6 Absolute maximum ratings Symbol VCES Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C5 C3 Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 75 50 150 ±20 312 150A @ 1200V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF50TDU120P – Rev 0 September, 2004 C1 APTGF50TDU120P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Test Conditions VGE = 0V, IC = 500 µA VGE = 0V Tj = 25°C VCE = 1200V Tj = 125°C VGE =15V Tj = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = ±20 V, VCE = 0V Min 1200 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A R G = 5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A R G = 5Ω Typ 3.2 4.0 4.5 Typ 3450 330 220 330 35 200 35 65 320 30 5.4 2.3 35 65 360 40 6.9 3.05 Max 500 2500 3.7 Unit V µA V 6.5 100 V nA Max Unit pF nC ns mJ ns mJ APT website – http://www.advancedpower.com 2-6 APTGF50TDU120P – Rev 0 September, 2004 X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 APTGF50TDU120P Reverse diode ratings and characteristics Symbol Characteristic VRRM Test Conditions Min Maximum Reverse Leakage Current VR=1200V Tj = 25°C Tj = 125°C IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C Diode Forward Voltage IF = 60A IF = 120A IF = 60A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs 250 500 Tj = 125°C Tj = 25°C 400 Tj = 125°C Tj = 25°C 470 1200 Tj = 125°C 4000 Symbol Characteristic VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Unit To heatsink V 60 2 2.3 1.8 Thermal and package characteristics RthJC Max 1200 Maximum Peak Repetitive Reverse Voltage IRM VF Typ M6 2500 -40 -40 -40 3 Typ µA A 2.5 V ns nC Max 0.4 0.9 Unit °C/W V 150 125 100 5 250 °C N.m g Package outline APT website – http://www.advancedpower.com 3-6 APTGF50TDU120P – Rev 0 September, 2004 5 places (3:1) APTGF50TDU120P Typical Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 160 TJ =125°C 80 40 TJ =25°C 30 20 T J=125°C 10 2 4 6 VCE, Collector to Emitter Voltage (V) 0 8 1 2 3 VCE , Collector to Emitter Voltage (V) Gate Charge VGE, Gate to Emitter Voltage (V) Transfer Characteristics 300 250µs Pulse Test < 0.5% Duty cycle 250 200 150 100 TJ =125°C 50 TJ =25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=50A 4 3 2 Ic=25A 1 0 9 14 VCE=600V 12 10 VCE=960V 8 6 4 2 0 50 100 150 200 250 300 350 Gate Charge (nC) Ic=100A 5 VCE=240V IC = 50A TJ = 25°C 16 0 VCE, Collector to Emitter Voltage (V) 8 18 16 On state Voltage vs Gate to Emitter Volt. 9 4 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) 6 3 1 0 1.15 80 Ic, DC Collector Current (A) 90 1.00 0.95 0.90 0.85 0.80 0.75 0.70 Ic=25A 2 -50 Breakdown Voltage vs Junction Temp. Ic=100A Ic=50A 4 1.20 1.05 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 5 16 1.10 On state Voltage vs Junction Temperature -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF50TDU120P – Rev 0 September, 2004 0 Ic, Collector Current (A) 40 0 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle TJ =25°C 120 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 50 Ic, Collector Current (A) Ic, Collector Current (A) 200 APTGF50TDU120P Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current Current Fall Time vs Collector Current 50 180 VCE = 600V RG = 5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ =25°C 100 VGE=15V 60 TJ = 125°C 40 30 T J = 25°C VCE = 600V, VGE = 15V, RG = 5Ω 20 20 125 VCE = 600V RG = 5Ω 24 TJ =125°C, VGE=15V 20 16 12 T J =25°C, VGE=15V 8 4 0 25 50 75 100 ICE, Collector to Emitter Current (A) 14 12 Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 6 4 Eoff, 25A 0 TJ = 125°C TJ = 25°C 2 0 0 Switching Energy Losses (mJ) 16 VCE = 600V VGE = 15V RG = 5Ω 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Switching Energy Losses vs Junction Temp. 8 VCE = 600V VGE = 15V TJ= 125°C 125 8 125 Switching Energy Losses vs Gate Resistance 18 25 50 75 100 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 28 0 Switching Energy Losses (mJ) 0 VCE = 600V VGE = 15V RG = 5Ω 6 Eon, 50A 4 Eoff, 50A 2 Eon, 25A Eoff, 25A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 0 25 50 75 100 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 125 5-6 APTGF50TDU120P – Rev 0 September, 2004 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGF50TDU120P Cies Minimum Switching Safe Operating Area 160 IC, Collector Current (A) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 1000 Coes 0 10 20 30 40 V CE, Collector to Emitter Voltage (V) 120 100 80 60 40 20 Cres 100 140 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.45 0.4 0.9 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.7 0.5 0.3 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (Seconds) 100 80 ZVS VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC = 75°C 60 40 ZCS 20 Hard switching 0 10 20 30 40 50 IC, Collector Current (A) 60 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF50TDU120P – Rev 0 September, 2004 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120