MMBTA13 MMBTA14 NPN Transistors Darlington Amplifier COLLECTOR 3 BASE 1 EMITTER 2 MA XIMUM R AT ING S R ating S ymbol Value Unit C ollector- E mitter Voltage VC E S 30 V dc C ollector- B as e Voltage VC BO 30 V dc E mitter- B as e Voltage VE BO 10 V dc IC 300 mAdc S ymbol Max Unit Total Device Dis s ipation F R ±5 B oard(1) T A = 25 C Derate above 25 C PD 225 mW 1.8 mW/ C T hermal R es is tance J unction to Ambient R JA 556 C /W PD 300 mW 2.4 mW/ C R qJ A 417 C /W T J , Ts tg - 55 to +150 C C ollector C urrent - C ontinuous 3 1 2 T HE R MA L C HA R A C T E R IS T IC S C harac teris tic Total Device Dis s ipation Alumina S ubs trate, (2) T A = 25 C Derate above 25 C T hermal R es is tance J unction to Ambient J unction and S torage Temperature S OT -23 DE V IC E MA R K ING MMB TA13 = 1M; MMB T A14LT 1 = 1N E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) C harac teris tic S ymbol Min Max Unit V (B R )C E S 30 - V dc C ollector C utoff C urrent (V C B = 30 V dc, I E = 0) IC B O - 100 nAdc E mitter C utoff C urrent (V E B = 10 V dc, I C = 0) IE B O - 100 nAdc OF F C HA R A C T E R IS T IC S C ollector- E mitter B reakdown Voltage (I C = 100 uAdc, V B E = 0) __ __ __ __ 1. F R - 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. WEITRON http://www.weitron.com.tw MMBTA13 MMBTA14 E L E C T R IC A L C HA R A C T E R IS T IC S (T A = 25 C unles s otherwis e noted) (C ontinued) C harac teris tic S ymbol Min Max Unit 5000 10,000 - 10,000 20,000 - V C E (s at) - 1.5 V dc VBE - 2.0 V dc fT 125 - MHz ON C HA R A C T E R IS T IC S (3) DC C urrent G ain (I C = 10 mAdc, V C E = 5.0 V dc) (I C = 100 mAdc, V C E = 5.0 V dc) - hF E MMB TA13 MMB TA14 MMB TA13 MMB TA14 C ollector- E mitter S aturation Voltage (I C = 100 mAdc, I B = 0.1 mAdc) B as e- E mitter On Voltage (I C = 100 mAdc, V C E = 5.0 V dc) S MA L L - S IG NA L C HA R A C T E R IS T IC S C urrent- G ain - B andwidth P roduct (4) (I C = 10 mAdc, V C E = 5.0 V dc, f = 100 MHz) 3. P uls e Tes t: P uls e Width 4. fT = |hfe | ftes t. 300 us , Duty C ycle 2.0%. RS in en IDEAL TRANSISTOR F IG .1. T rans is tor Nois e Model 2.0 BANDWIDTH = 1.0 Hz RS @ 0 200 100 10mA 50 100mA 20 IC = 1.0 m A BANDWIDTH = 1.0 Hz in, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 10 5.0 10 20 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 0.1 0.07 0.05 100 mA 10 mA 0.03 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) F IG .2 Nois e Voltage WEITRON http://www.weitron.com.tw 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (H z) F IG .3 Nois e C urrent 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 100 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) MMBTA13 MMBTA14 IC = 10 mA 70 50 100 mA 30 20 1.0 mA 10 1.0 2.0 10 10 mA 8.0 100 mA 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 R S , SOURCE RESISTANCE (kW) 500 1000 0 1.0 2.0 5.0 F IG .4 Total Wideband Nois e Voltage 4.0 |hfe |, SMALL- SIGNAL CURRENT GAIN C, CAPACITANCE (pF) TJ = 25 C 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR , REVERSE VOLTAGE (VOLTS) 20 2.0 0.4 VCE , COLLECTOR- EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 25 C 30 k 20 k 2.0 k 5.0 7.0 - 55 C VCE = 5.0 V 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) F IG .8 DC C urrent G ain WEITRON http://www.weitron.com.tw 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (m A) 500 F IG .7 High F requenc y C urrent G ain TJ = 125 C 3.0 k VCE = 5.0 V f = 100 MHz TJ = 25 C 0.6 0.2 0.5 40 200 k 10 k 7.0 k 5.0 k 1000 1.0 0.8 F IG .6 C apac itanc e 100 k 70 k 50 k 500 F IG .5 W ideband Nois e F igure 20 10 10 20 50 100 200 R S , SOURCE RESISTANCE (kW) 500 3.0 TJ = 25 C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) F IG .9 C ollec tor S aturation R egion 500 1000 MMBTA13 MMBTA14 R qV, TEMPERATURE COEFFICIENTS (mV/ C) 1.6 TJ = 25 C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ I C/IB = 1000 1.2 VBE(on) @ V CE = 5.0 V 1.0 0.8 VCE(sat) @ I C/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 - 1.0 - 2.0 *APPLIES FOR IC/IB 3 hFE /3.0 *Rq VC FOR V CE(sat) - 55 C TO 25 C - 3.0 25 C TO 125 C - 4.0 VB FOR V BE - 5.0 - 55 C TO 25 C - 6.0 5.0 7.0 10 r(t), TRANSIENTTHERMAL RESIST ANCE (NORMALIZED) F IG .10. " On" Voltages 1.0 0.7 0.5 25 C TO 125 C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) F IG .11 500 Temperature C oeffic ients D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE 0.03 ZqJC(t) = r(t)wR qJC T J(pk) - T C = P(pk)ZqJC(t) ZqJA(t) = r(t)wR qJA T J(pk) - T A = P(pk)ZqJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k F IG .12 T hermal R es pons e IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 FIGURE A 1.0 ms TA = 25 C TC = 25 C tP 100 ms PP 1.0 s 100 70 50 PP t1 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 20 10 0.4 0.6 1.0 2.0 4.0 6.0 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) F IG .13 A c tive R egion S afe Operating A rea WEITRON http://www.weitron.com.tw 1/f 40 t1 tP PEAK PULSE POWER = PP DUTY CYCLE t1 f Des ign Note: Us e of Trans ient T hermal R es is tanc e Data MMBTA13 MMBTA14 SOT-23 Package Outline Dimensions Unit:mm A B TOP VIEW E G Dim Min Max A 0.35 0.51 B 1.19 1.80 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.60 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M