mmbta13 - Semtech

MMBTA13
NPN Silicon Epitaxial Planar Darlington Transistor
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCES
Emitter Base Voltage
VEBO
Collector Current
Unit
30
V
30
V
10
V
500
mA
350
mW
357
℃/W
150
℃
-55 to + 150
℃
E
T
IC
Ptot
Power Dissipation
Thermal Resistance, Junction to Ambient
M
E
Junction Temperature
Storage Temperature Range
S
Characteristics at Ta = 25℃
Parameter
RθJA
Tj
TStg
H
C
Value
Symbol
Min.
Max.
Unit
hFE
hFE
5,000
10,000
-
-
ICBO
-
100
nA
IEBO
-
100
nA
Collector Emitter Breakdown Voltage
at IC = 100 μA
V(BR)CES
30
-
V
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 0.1 mA
VCE(sat)
-
1.5
V
Base Emitter On Voltage
at IC = 100 mA, VCE = 5 V
VBE(on)
-
2
V
fT
125
-
MHz
DC Current Gain
at VCE = 5 V, IC =10 mA
at VCE = 5 V, IC =100 mA
Collector Base Cutoff Current
at VCB = 30 V
Emitter Base Cutoff Current
at VEB = 10 V
Transition Frequency
at VCE =10 V, IC =10 mA, f = 100 MHz
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited
®
Dated: 20/10/2012 Rev: 01