MMBTA13 NPN Silicon Epitaxial Planar Darlington Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Collector Base Voltage VCBO Collector Emitter Voltage VCES Emitter Base Voltage VEBO Collector Current Unit 30 V 30 V 10 V 500 mA 350 mW 357 ℃/W 150 ℃ -55 to + 150 ℃ E T IC Ptot Power Dissipation Thermal Resistance, Junction to Ambient M E Junction Temperature Storage Temperature Range S Characteristics at Ta = 25℃ Parameter RθJA Tj TStg H C Value Symbol Min. Max. Unit hFE hFE 5,000 10,000 - - ICBO - 100 nA IEBO - 100 nA Collector Emitter Breakdown Voltage at IC = 100 μA V(BR)CES 30 - V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 0.1 mA VCE(sat) - 1.5 V Base Emitter On Voltage at IC = 100 mA, VCE = 5 V VBE(on) - 2 V fT 125 - MHz DC Current Gain at VCE = 5 V, IC =10 mA at VCE = 5 V, IC =100 mA Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 10 V Transition Frequency at VCE =10 V, IC =10 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated: 20/10/2012 Rev: 01