MPSA55 MPSA56 Driver PNP Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC MPSA55 -60 -60 MPSA56 -80 -80 -4.0 -500 Unit Vdc Vdc Vdc mAdc Total Device Dissipation TA=25 C PD 0.625 W Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) MPSA55 MPSA56 V(BR)CEO -60 -80 Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) MPSA55 MPSA56 V(BR)CBO Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) Collector Cutoff Current (VCE= 50 Vdc, IB =0) MPSA55 (VCE= 60 Vdc, IB =0) MPSA56 Collector Cutoff Current (VCE= -60 Vdc, I B=0) MPSA55 (VCE= -80 Vdc, I B=0) MPSA56 Emitter Cutoff Current (VEB= -3.0Vd c, IC =0) WEITRON http://www.weitron.com.tw Max Unit - Vdc -60 -80 - Vdc -4.0 - Vdc ICE0 - -0.1 uAdc ICBO - -0.1 uAdc IEBO - -0.1 uAdc V(BR)EBO MPSA55 MPSA56 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit hFE (1) 100 - - - ON CHARACTERISTICS DC Current Gain (IC= -100 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC= -100 mAdc, IB= -10 mAdc) VCE(sat) - - -0.25 Vdc Base-Emitter Saturation Voltage (IC= -100 mAdc, IB= -10 mAdc) VBE(sat) - - -1.2 Vdc fT 100 - - MHz 200 100 VCE = -2.0 V TJ = 25 C TJ = 25 C 70 50 100 C, CAPACITANCE (pF) f T , CURRENT-GAIN - BANDWIDTH PRODUCT(MHz) Current-Gain-Bandwidth Product (IC= -10 mAdc, VCE= -2.0 Vdc, f=100 MHz) 70 50 30 30 20 Cobo 10 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) F IG 1. C urrent-G ain ÐB andwidth P roduc t WEITRON http://www.weitron.com.tw -200 5.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR , REVERSE VOL TAGE (VOLTS) F IG 2. C apac itanc e -50 -100 MPSA55 MPSA56 400 -1.0 VCE = -1.0 V 25 C -55 C 100 TJ = 25 C -0.8 200 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN TJ = 125 C 80 VBE(sat) @ I C/IB = 10 -0.6 VBE(on) @ V CE = -1.0 V -0.4 -0.2 60 VCE(sat) @ I C/IB = 10 40 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 0 -0.5 -500 IC, COLLECTOR CURRENT (mA) -1.0 -2.0 -5.0 -1.0 TJ = 25 C IC = -100 mA IC = -50 mA IC = -250 mA IC = -500 mA -0.6 -0.4 -0.2 IC = -10 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) F IG 5. C ollec tor S aturation R egion WEITRON http://www.weitron.com.tw -20 -50 -100 -200 -500 F IG 4. " ON" Voltages -50 R VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) F IG 3. DC C urrent G ain -0.8 -10 IC, COLLECTOR CURRENT (mA) -0.8 -1.2 -1.6 -2.0 R VB for VBE -2.4 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) F IG 6. B as e-E mitter Temperature C oeffic ient -500 MPSA55 MPSA56 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50