MPSA55 MPSA56

MPSA55
MPSA56
Driver PNP Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
MPSA55
-60
-60
MPSA56
-80
-80
-4.0
-500
Unit
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation TA=25 C
PD
0.625
W
Junction Temperature
Tj
150
C
Storage, Temperature
Tstg
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
MPSA55
MPSA56
V(BR)CEO
-60
-80
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
MPSA55
MPSA56
V(BR)CBO
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current
(VCE= 50 Vdc, IB =0) MPSA55
(VCE= 60 Vdc, IB =0) MPSA56
Collector Cutoff Current
(VCE= -60 Vdc, I B=0) MPSA55
(VCE= -80 Vdc, I B=0) MPSA56
Emitter Cutoff Current (VEB= -3.0Vd c, IC =0)
WEITRON
http://www.weitron.com.tw
Max
Unit
-
Vdc
-60
-80
-
Vdc
-4.0
-
Vdc
ICE0
-
-0.1
uAdc
ICBO
-
-0.1
uAdc
IEBO
-
-0.1
uAdc
V(BR)EBO
MPSA55
MPSA56
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
Unit
hFE (1)
100
-
-
-
ON CHARACTERISTICS
DC Current Gain
(IC= -100 mAdc, VCE=1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -10 mAdc)
VCE(sat)
-
-
-0.25
Vdc
Base-Emitter Saturation Voltage
(IC= -100 mAdc, IB= -10 mAdc)
VBE(sat)
-
-
-1.2
Vdc
fT
100
-
-
MHz
200
100
VCE = -2.0 V
TJ = 25 C
TJ = 25 C
70
50
100
C, CAPACITANCE (pF)
f T , CURRENT-GAIN - BANDWIDTH PRODUCT(MHz)
Current-Gain-Bandwidth Product
(IC= -10 mAdc, VCE= -2.0 Vdc, f=100 MHz)
70
50
30
30
20
Cobo
10
7.0
20
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
IC, COLLECTOR CURRENT (mA)
F IG 1. C urrent-G ain ÐB andwidth P roduc t
WEITRON
http://www.weitron.com.tw
-200
5.0
-0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
VR , REVERSE VOL TAGE (VOLTS)
F IG 2. C apac itanc e
-50 -100
MPSA55
MPSA56
400
-1.0
VCE = -1.0 V
25 C
-55 C
100
TJ = 25 C
-0.8
200
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
TJ = 125 C
80
VBE(sat) @ I C/IB = 10
-0.6
VBE(on) @ V CE = -1.0 V
-0.4
-0.2
60
VCE(sat) @ I C/IB = 10
40
-0.5 -1.0 -2.0
-5.0 -10
-20
-50
-100 -200
0
-0.5
-500
IC, COLLECTOR CURRENT (mA)
-1.0 -2.0
-5.0
-1.0
TJ = 25 C
IC =
-100 mA
IC =
-50 mA
IC =
-250 mA
IC =
-500 mA
-0.6
-0.4
-0.2
IC =
-10 mA
0
-0.05 -0.1 -0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
IB, BASE CURRENT (mA)
F IG 5. C ollec tor S aturation R egion
WEITRON
http://www.weitron.com.tw
-20
-50
-100 -200
-500
F IG 4. " ON" Voltages
-50
R VB , TEMPERATURE COEFFICIENT (mV/ C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
F IG 3. DC C urrent G ain
-0.8
-10
IC, COLLECTOR CURRENT (mA)
-0.8
-1.2
-1.6
-2.0
R VB for VBE
-2.4
-2.8
-0.5 -1.0 -2.0
-5.0
-10
-20
-50
-100 -200
IC, COLLECTOR CURRENT (mA)
F IG 6. B as e-E mitter Temperature
C oeffic ient
-500
MPSA55
MPSA56
unit:mm
TO-92 Outline Dimensions
E
H
TO-92
Dim
A
B
C
D
E
G
H
J
K
L
L
C
J
K
D
A
B
G
WEITRON
http://www.weitron.com.tw
Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50