MMBTA14 NPN Silicon Epitaxial Planar Transistors for general purpose applications, darlington transistor. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package Absolute Maximum Ratings (Ta=25 OC) Symbol Value Unit Collector Emitter Voltage VCES 30 V Collector Base Voltage VCBO 30 V Emitter Base Voltage VEBO 10 V Collector Current IC 500 mA Power Dissipation Ptot 200 mW Tj 150 O TStg -55 to +150 O Junction Temperature Storage Temperature Range C C Characteristics at Tamb=25 OC Symbol Min. Max. Unit at VCE=5V, IC=10mA hFE 10000 - - at VCE=5V, IC=100mA hFE 20000 - - V(BR)CES 30 - V ICBO - 100 nA IEBO - 100 nA VCE (sat) - 1.5 V VBE(on) - 2 V fT 125 - MHz DC Current Gain Collector Emitter Breakdown Voltage at IC=100µA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=10V Collector Emitter Saturation Voltage at IC=100mA, IB=0.1mA Base Emitter On Voltage at IC=100mA, VCE=5V Current Gain Bandwidth Product at VCE=5V, IC=10mA, f=100MHz SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01