MMBT3906

MMBT3906
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
Voltage - -40 Volts
Power Dissipation - 300 mWatt
FEATURES
●
●
●
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
SOT-23
A
C
B
B TOP VIEW
C
E
D
E
G
H
●
●
●
●
2.30
2.50
D
0.89
1.03
E
0.45
0.60
3
J
0.013
0.10
C
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
B
E
1
2
L
0
8
All Dimensions in mm
COLLECTOR
3
BASE
1
2
EMITTER
2
Emitter
Symbol
VCEO
VCBO
VEBO
IC
Limits
-40
-60
-5
-200
Unit
Vdc
Vdc
Vdc
mAdc
PD
225
mW
RΘJA
1.8
556
mW/℃
℃/W
PD
300
mW
RΘJA
2.4
417
mW/℃
℃/W
TJ,Tstg
−55∼+150
℃
●THERMAL CHARACTERISTICS
2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina.
1.40
C
2.05
● MAXIMUM RATING (Ta = 25 ℃)
1. FR–5 = 1.0×0.75×0.062 in.
0.51
1.20
3.00
3
Collector
Total Device Dissipation,
FR-5 Board (Note1) @TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction–to–Ambient(Note 1)
Total Device Dissipation,
Alumina Substrate (Note 2) @ TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction–to–Ambient(Note 2)
Junction and Storage temperature
0.37
B
1.78
M
Top View
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
A
2.80
J
1
Base
Max
H
K
Case: SOT-23, Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Terminals: Solderable per MIL-STD-202,
Method 208
Marking: Device Code
Weight: 0.008 grams (approx.)
Min
G
MECHANICAL DATA
●
Dim
MMBT3906
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
Voltage - -40 Volts
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
OFF CHARACTERISTICS
Characteristic
Symbol
VBR(CEO)
Collector–Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
VBR(CBO)
Collector–Base Breakdown Voltage
(I C = –10 μAdc, IE = 0)
Emitter–Base Breakdown Voltage
VBR(EBO)
(I E = –10 μAdc, IC = 0)
Collector Cutoff Current
ICEX
( V CE = –30 Vdc, VEB =– 3.0Vdc)
Base Cutoff Current
IBL
(V CE = –30 Vdc, VEB = –3.0Vdc)
ON CHARACTERISTICS (Note 1.)
DC Current Gain
hFE
(I C = –0.1 mAdc, VCE = – 1.0 Vdc)
(I C = –1.0 mAdc, VCE = – 1.0 Vdc)
(I C = –10 mAdc, VCE = – 1.0 Vdc)
(I C = –50 mAdc, VCE = – 1.0 Vdc)
(I C = –100 mAdc, VCE = – 1.0 Vdc)
Collector–Emitter Saturation Voltage(3)
VCE(sat)
(I C = –10 mAdc, IB = –1.0 mAdc)
(I C = –50mAdc, IB = – 5.0 mAdc)
Base–Emitter Saturation Voltage
VBE(sat)
(I C = –10 mAdc, IB = –1.0 mAdc)
(I C = –50mAdc, IB = – 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Characteristic
Symbol
Current–Gain — Bandwidth Product
fT
(I C = –10mAdc, VCE= –20Vdc, f = 100MHz)
Output Capacitance
Cobo
(V CB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
Cibo
(V EB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
hie
(VCE =– 10 Vdc, IC = –1.0mAdc,f=1.0 kHz)
Voltage Feedback Ratio
hre
(V CE = –10 Vdc, IC = –1.0mAdc,f=1.0 kHz)
Small–Signal Current Gain
(V CE=–10 Vdc, I C =–1.0mAdc,f=1.0 kHz)
Output Admittance
(V CE=–10 Vdc, I C =–1.0mAdc,f =1.0kHz)
Noise Figure
(VCE=–5V,I C =–100μA, RS=1.0kΩ ,f=1.0kHz)
3. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%.
hfe
hoe
NF
Power Dissipation - 300 mWatt
Min.
Typ.
Max.
–40
–
–
–40
–
–
–5
–
–
Unit
V
V
V
nA
–
–50
–
–
–50
60
80
100
60
30
–
–
–
–
–
–
–
300
–
–
–
–
–
–
–0.25
–0.4
–0.65
–
–
–
–0.85
–0.95
Min.
Typ.
Max.
250
–
–
–
–
–
nA
V
V
–
2
–
–
4.5
10
Unit
MHz
pF
pF
kΩ
12
X 10 –4
0.1
–
10
100
–
400
μmhos
3
–
60
–
–
4
dB
MMBT3906
RATINGS AND CHARACTERISTIC CURVES
●ELECTRICAL CHARACTERISTICS (Ta= 25℃)
SWITCHING CHARACTERISTICS
Delay Time
td
(V CC = –3.0 Vdc, VBE =
tr
0.5
Vdc,I
C = –10 mAdc,
Rise Time
IB1= – 1.0 mAdc)
ts
(VCC = – 3.0 Vdc, I C =
Storage Time
–10 mAdc,I B1 = IB2 =
tf
Fall Time
–1.0 mAdc)
–
–
–
–
225
–
–
75
3V
35
ns
3V
< 1 ns
+9.1 V
275
275
< 1 ns
±0.5 V
10 k
10 k
0
CS < 4 pF*
10.6 V
35
–
–
300 ns
10 < t1< 500us
DUTY CYCLE = 2%
CS < 4 pF*
1N916
t1
DUTY CYCLE = 2%
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
5000
VCC=40 V
IC/IB=10
3000
7.0
2000
5.0
Q, CHARGE (pC)
CAPACITANCE ( pF )
10
Cobo
Cibo
3.0
o
TJ=25 C
o
TJ=125 C
1000
2.0
700
500
300
200
QT
QA
100
1.0
70
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
50
20 30 40
1.0
2.0 3.0
Figure 3. Capacitance
30
50 70 100
200
Figure 4. Charge Data
300
VCC=40 V
IB1=IB2
300
IC/IB=10
200
200
100
100
70
tr, RISE TIME ( ns )
TIME (ns)
20
500
500
tr @ VCC=3.0 V
50
15 V
30
20
40 V
10
2.0 3.0
5.0 7.0 10
20
30
70
50
30
20
IC/IB=10
7
td @ VOB=0 V
1.0
IC/IB=20
10
2.0 V
7
5
5.0 7.0 10
IC, COLLECTOR CURRENT ( mA )
REVERSE BIAS ( VOLTS )
50 70 100
IC, COLLECTOR CURRENT ( mA )
Figure 5. Turn-On Time
200
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT ( mA )
Figure 6. Fall Time
200
MMBT3906
RATINGS AND CHARACTERISTIC CURVES
TYPICAL TRANSIENT CHARACTERISTICS
NOISE FIGURE VARIATIONS
o
(VCE= -5.0Vdc, TA=25 C, Bandwidth=1.0HZ)
12
SOURCE RESISTANCE=200
IC=1.0 mA
NF, NOISE FIGURE ( bB )
NF, NOISE FIGURE ( bB )
5.0
4.0
SOURCE RESISTANCE=200
IC=0.5 mA
3.0
SOURCE RESISTANCE=2.0 K
IC=50uA
2.0
1.0
0
f = 1.0 KHZ
10
8
6
IC =50 uA
4
SOURCE RESISTANCE=2.0 K
2
0.1
0.2
0.4
1.0
2.0
4.0
10
20
Figure 7.
40
0
100
0.1
0.4
2.0
4.0
10
40
20
100
Figure 8.
100
200
100
70
50
0.1
0.2
0.3
0.5
1.0
2.0 3.0
5.0
50
30
20
10
7
5
10
0.1
0.2
IC, COLLECTOR CURRENT ( mA )
hre, VOLTAGE FEEDBACK RATIO(X 10-4)
10
5.0
2.0
1.0
0.5
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT ( mA )
Figure 11. Input Impedance
0.5
1.0
2.0 3.0
5.0
10
Figure 10. Output Admittance
20
0.1
0.3
IC, COLLECTOR CURRENT ( mA )
Figure 9. Current Gain
hie, INPUT IMPEDANCE (k OHMS)
1.0
h PARAMETERS
o
(VCE= -10Vdc, f=1.0 kHZ, TA=25 C)
hoe, OUTPUTADMITTANCE (umhos)
hfe, DC CURRENT GAIN
0.2
RS, SOURCE RESISTANCE ( k OHMS )
300
0.2
IC =100 uA
IC =0.5 mA
f, FREQUENCY (kHz)
30
IC =1.0 mA
5.0
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7
1.0
2.0 3.0
IC, COLLECTOR CURRENT ( mA )
5.0 7.0
Figure 12. Voltage Feedback Ratio
10
MMBT3906
RATINGS AND CHARACTERISTIC CURVES
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
o
TJ = +125 C
VCE=1.0V
o
TJ = +25 C
1.0
0.7
o
TJ = -55 C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
100
70
200
IC, COLLECTOR CURRENT ( mA )
Figure 13. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
o
TJ = 25 C
0.8
10 mA
IC = 1.0 mA
0.6
30 mA
100 mA
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT ( mA )
Figure 14. Collector Saturation Region
1.0
o
TEMPERATURE COEFFICIENTS (mV / C)
1.0
VBE(sat) @ IC/IB=10
VBE @ ICE=1.0 V
0.6
0.4
0.2
VCE(sat) @ IC/IB=10
o
0.5
VC
o
+25 C to +125 C
FOR VCE(sat)
0
o
o
-55 C to +25 C
-0.5
o
o
-55 C to +25 C
-1.0
o
VB
-1.5
o
+25 C to +125 C
FOR VBE(sat)
V,
V, VOLTAGE ( VOLTS )
0.8
0
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT ( mA )
Figure 17. " ON " Voltage
100
200
-2.0
0
20
40
60
80
100
120
140
160
180 200
IC, COLLECTOR CURRENT ( mA )
Figure 16. Temperature Coefficients