AVAGO ACPL-331J

ACPL-331J
1.5 Amp Output Current IGBT Gate Driver Optocoupler
with Integrated (VCE) Desaturation Detection, UVLO,
Fault Status Feedback and Active Miller Clamping
Data Sheet
Lead (Pb) Free
RoHS 6 fully
compliant
RoHS 6 fully compliant options available;
-xxxE denotes a lead-free product
Description
Features
The ACPL-331J is an advanced 1.5 A output current, easyto-use, intelligent gate driver which makes IGBT VCE fault
protection compact, affordable, and easy-to implement.
Features such as integrated VCE detection, under
voltage lockout (UVLO), “soft” IGBT turn-off, isolated
open collector fault feedback and active Miller clamping
provide maximum design flexibility and circuit protection.
• Under Voltage Lock-Out Protection (UVLO)
with Hysteresis
The ACPL-331J contains a GaAsP LED. The LED is optically
coupled to an integrated circuit with a power output
stage. ACPL-331J is ideally suited for driving power IGBTs
and MOSFETs used in motor control inverter applications.
The voltage and current supplied by these optocouplers
make them ideally suited for directly driving IGBTs with
ratings up to 1200 V and 100 A. For IGBTs with higher
ratings, the ACPL-331J can be used to drive a discrete
power stage which drives the IGBT gate. The ACPL-331J
has an insulation voltage of VIORM = 891 VPEAK.
VCC2
UVLO
ANODE
CATHODE
6, 7
D
R
I
V
E
R
5, 8
LED1
11
14
DESAT
9, 12
SHIELD
VOUT
DESAT
VEE
VCC1
FAULT
3
• Open Collector Isolated fault feedback
• “Soft” IGBT Turn-off
• Fault Reset by next LED turn-on (low to high) after
fault mute period
• Available in SO-16 package
• Safety approvals: UL approved, 3750 VRMS for 1
minute, CSA approved, IEC/EN/DIN-EN 60747-5-2
approved VIORM = 891 VPEAK
Specifications
• 1.5 A maximum peak output current
• 1.0 A minimum peak output current
• 100 ns maximum pulse width distortion (PWD)
• 15 kV/µs minimum common mode rejection (CMR)
at VCM = 1500 V
• ICC(max) < 5 mA maximum supply current
• Wide VCC operating range: 15 V to 30 V over
temperature range
• 1.0 A Miller Clamp. Clamp pin short to VEE if not used
VCLAMP
2
• Miller Clamping
• 250 ns maximum propagation delay over
temperature range
Block Diagram
13
• Desaturation Detection
10
LED2
16
VCLAMP
VE
• Wide operating temperature range: –40°C to 100°C
Applications
• Isolated IGBT/Power MOSFET gate drive
VS
1, 4
15
SHIELD
VLED
• AC and brushless DC motor drives
• Industrial inverters and Uninterruptible Power Supply
(UPS)
CAUTION: It is advised that normal static precautions be taken in handling and assembly
of this component to prevent damage and/or degradation which may be induced by ESD.
Pin Description
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
8
ANODE
CATHODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
Pin
Symbol
Description
1
VS
Input Ground
2
VCC1
Positive input supply voltage. (4.5 V to 5.5 V)
3
FAULT
Fault output. FAULT changes from a high impedance state
to a logic low output within 5 µs of the voltage on the
DESAT pin exceeding an internal reference voltage of 6.5 V.
FAULT output is an open collector which allows the FAULT
outputs from all ACPL-331J in a circuit to be connected
together in a “wired OR” forming a single fault bus for interfacing directly to the micro-controller.
4
VS
Input Ground
5
CATHODE
Cathode
6
ANODE
Anode
7
ANODE
Anode
8
CATHODE
Cathode
9
VEE
Output supply voltage.
10
VCLAMP
Miller clamp
11
VOUT
Gate drive voltage output
12
VEE
Output supply voltage.
13
VCC2
Positive output supply voltage
14
DESAT
Desaturation voltage input. When the voltage on DESAT
exceeds an internal reference voltage of 6.5 V while the
IGBT is on, FAULT output is changed from a high impedance
state to a logic low state within 5 µs.
15
VLED
LED anode. This pin must be left unconnected for guaranteed data sheet performance. (For optical coupling testing
only)
16
VE
Common (IGBT emitter) output supply voltage.
Ordering Information
ACPL-331J is UL Recognized with 3750 Vrms for 1 minute per UL1577.
Option
Part number
RoHS Compliant
Package
ACPL-331J
-000E
SO-16
-500E
Surface
Mount
Tape& Reel
X
X
X
IEC/EN/DIN EN
60747-5-2
Quantity
X
45 per tube
X
850 per reel
To order, choose a part number from the part number column and combine with the desired option from the option
column to form an order entry.
Example 1:
ACPL-331J-500E to order product of SO-16 Surface Mount package in Tape and Reel packaging with IEC/EN/DIN EN
60747-5-2 Safety Approval in RoHS compliant.
Example 2:
ACPL-331J-000E to order product of SO-16 Surface Mount package in tube packaging with IEC/EN/DIN EN 60747-52 Safety Approval and RoHS compliant.
Option datasheets are available. Contact your Avago sales representative or authorized distributor for information.
Remarks: The notation ‘#XXX’ is used for existing products, while (new) products launched since 15th July 2001 and
RoHS compliant option will use ‘-XXXE‘.
Package Outline Drawings
0.018
(0.457)
0.050
(1.270)
16 15 14 13 12 11 10
9
TYPE NUMBER
DATE CODE
A 332J
YYWW
1
2
3
4
5
LAND PATTERN RECOMMENDATION
0.458 (11.63)
0.295 ± 0.010
(7.493 ± 0.254)
6
7
0.085 (2.16)
8
0.406 ± 0.10
(10.312 ± 0.254)
0.025 (0.64)
0.345 ± 0.010
(8.763 ± 0.254)
9°
0.018
(0.457)
0.138 ± 0.005
(3.505 ± 0.127)
ACPL-331J 16-Lead Surface Mount Package
Dimensions in inches (millimeters)
Notes: Initial and continued variation in the color of the ACPL331J’s white mold compound is normal and does note affect device
performance or reliability.
Floating Lead Protrusion is 0.25 mm (10 mils) max.
0- 8°
0.025 MIN.
0.408 ± 0.010
(10.363 ± 0.254)
ALL LEADS
TO BE
COPLANAR
± 0.002
0.008 ± 0.003
(0.203 ± 0.076)
STANDOFF
Solder Reflow Thermal Profile
300
PREHEATING RATE 3 ° C + 1 ° C/ - 0.5 ° C/SEC.
REFLOW HEATING RATE 2.5 ° C ± 0.5 ° C/SEC.
TEMPERATURE ( ° C)
200
PEAK
TEMP.
245 ° C
PEAK
TEMP.
240 ° C
2.5 ° C ± 0.5 ° C/SEC.
30
SEC.
160 ° C
150 ° C
140 ° C
SOLDERING
TIME
200 ° C
30
SEC.
3 ° C + 1 ° C/ - 0.5 ° C
100
PREHEATING TIME
150 ° C, 90 + 30 SEC.
50 SEC.
TIGHT
TYPICAL
LOOSE
ROOM
TEMPERATURE
0
0
50
100
150
TIME (SECONDS)
Note: Non-halide flux should be used.
Recommended Pb-Free IR Profile
tp
Tp
TEMPERATURE
TL
T smax
260 +0/-5 °C
TIME WITHIN 5°C of ACTUAL
PEAK TEMPERATURE
20-40 SEC.
217 °C
RAMP-UP
3 ° C/SEC. MAX.
150 - 200 °C
RAMP-DOWN
6 °C/SEC. MAX.
T smin
ts
PREHEAT
60 to 180 SEC.
25
tL
60 to 150 SEC.
t 25 °C to PEAK
TIME
NO TES:
THE TIME FROM 25°C to PEAK TEMPERATURE = 8 MINUTES MAX.
T smax = 200 °C, Tsmin = 150 °C
Note: Non-halide flux should be used.
PEAK
TEMP.
230 ° C
200
250
Regulatory Information
The ACPL-331J is approved by the following organizations:
IEC/EN/DIN EN 60747-5-2
UL
Approval under:
IEC 60747-5-2 :1997 + A1:2002
EN 60747-5-2:2001 + A1:2002
DIN EN 60747-5-2 (VDE 0884 Teil 2):2003-01
Approval under UL 1577, component recognition
program up to VISO = 3750 VRMS. File E55361.
CSA
Approval under CSA Component Acceptance Notice #5,
File CA 88324.
Table 1. IEC/EN/DIN EN 60747-5-2 Insulation Characteristics*
Description
Symbol
Characteristic
Installation classification per DIN VDE 0110/1.89, Table 1
for rated mains voltage ≤ 150 Vrms
for rated mains voltage ≤ 300 Vrms
for rated mains voltage ≤ 600 Vrms
I – IV
I – IV
I – III
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
Unit
Maximum Working Insulation Voltage
VIORM
891
Vpeak
Input to Output Test Voltage, Method b**,
VIORM x 1.875=VPR, 100% Production Test with tm=1 sec, Partial discharge < 5
pC
VPR
1670
Vpeak
Input to Output Test Voltage, Method a**,
VIORM x 1.5=VPR, Type and Sample Test, tm=60 sec, Partial discharge < 5 pC
VPR
1336
Vpeak
Highest Allowable Overvoltage (Transient Overvoltage tini = 10 sec)
VIOTM
6000
Vpeak
Case Temperature
TS
175
°C
Input Current
IS, INPUT
400
mA
Output Power
PS, OUTPUT
1200
mW
Insulation Resistance at TS, VIO = 500 V
RS
>109
W
Safety-limiting values – maximum values allowed in the event of a failure
* Isolation characteristics are guaranteed only within the safety maximum ratings which must be ensured by protective circuits in application.
Surface mount classification is class A in accordance with CECCOO802.
** Refer to the optocoupler section of the Isolation and Control Components Designer’s Catalog, under Product Safety Regulations section IEC/EN/
DIN EN 60747-5-2, for a detailed description of Method a and Method b partial discharge test profiles.
Dependence of Safety Limiting Values on Temperature. (take from DS AV01-0579EN Pg.7)
1400
P S , OUTPUT
P S , INPUT
PS - POWER - mW
1200
1000
800
600
400
200
0
0
25
50
75
100 125 150 175 200
TS - CASE TEMPERATURE - °C
Table 2. Insulation and Safety Related Specifications
Parameter
Symbol
ACPL-331J
Units
Conditions
Minimum External Air
Gap (Clearance)
L(101)
8.3
Mm
Measured from input terminals to output terminals,
shortest distance through air.
Minimum External
Tracking (Creepage)
L(102)
8.3
Mm
Measured from input terminals to output terminals,
shortest distance path along body.
0.5
Mm
Through insulation distance conductor to conductor,
usually the straight line distance thickness between the
emitter and detector.
>175
V
DIN IEC 112/VDE 0303 Part 1
Minimum Internal
Plastic Gap (Internal
Clearance)
Tracking Resistance
(Comparative Tracking
Index)
CTI
Isolation Group
IIIa
Material Group (DIN VDE 0110, 1/89, Table 1)
Table 3. Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Units
Storage Temperature
TS
-55
125
°C
Note
Operating Temperature
TA
-40
100
°C
2
Output IC Junction Temperature
TJ
125
°C
2
Average Input Current
IF(AVG)
25
mA
1
Peak Transient Input Current
(<1 µs pulse width, 300pps)
IF(TRAN)
1.0
A
Reverse Input Voltage
VR
5
V
“High” Peak Output Current
IOH(PEAK)
1.5
A
3
“Low” Peak Output Current
IOL(PEAK)
1.5
A
3
Positive Input Supply Voltage
VCC1
-0.5
5.5
V
FAULT Output Current
IFAULT
8.0
FAULT Pin Voltage
VFAULT
-0.5
VCC1
V
Total Output Supply Voltage
(VCC2 - VEE)
-0.5
33
V
Negative Output Supply Voltage
(VE - VEE)
-0.5
15
V
Positive Output Supply Voltage
(VCC2 - VE)
-0.5
33 - (VE - VEE)
V
Gate Drive Output Voltage
VO(PEAK)
-0.5
VCC2
V
Peak Clamping Sinking Current
IClamp
1.0
A
Miller Clamping Pin Voltage
VClamp
-0.5
VCC2
V
DESAT Voltage
VDESAT
VE
VE + 10
V
Output IC Power Dissipation
PO
600
mW
2
Input IC Power Dissipation
PI
150
mW
2
Solder Reflow Temperature Profile
See Package Outline Drawings section
mA
6
Table 4. Recommended Operating Conditions
Parameter
Symbol
Min.
Max.
Units
Note
Operating Temperature
TA
- 40
100
°C
2
Total Output Supply Voltage
(VCC2 - VEE)
15
30
V
7
Negative Output Supply Voltage
(VE - VEE)
0
15
V
4
Positive Output Supply Voltage
(VCC2 - VE)
15
30 - (VE - VEE)
V
Input Current (ON)
IF(ON)
8
12
mA
Input Voltage (OFF)
VF(OFF)
- 3.6
0.8
V
Table 5. Electrical Specifications (DC)
Unless otherwise noted, all typical values at TA = 25°C, VCC2 - VEE = 30 V, VE - VEE = 0 V; all Minimum/Maximum specifications are at Recommended Operating Conditions.
Parameter
Symbol
Min.
FAULT Logic Low
Output Voltage
VFAULTL
FAULT Logic High
Output Current
IFAULTH
High Level
Output Current
IOH
Low Level
Output Current
IOL
Low Level Output Current
During Fault Condition
IOLF
90
High Level
Output Voltage
VOH
VCC-3.5 VCC-2.5
VCC-2.9 VCC-2.0
Low Level
Output Voltage
VOL
0.17
Clamp Pin Threshold
Voltage
VtClamp
2.0
V
Clamp Low Level
Sinking Current
ICL
0.7
A
VO = VEE + 2.5
High Level Supply Current
ICC2H
Low Level Supply Current
ICC2L
Blanking Capacitor
Charging Current
ICHG
0.13
Blanking Capacitor
Discharge Current
IDSCHG
10
30
DESAT Threshold
VDESAT
6
6.5
UVLO Threshold
VUVLO+
10.5
-0.3
Typ.
Max.
Units
Test Conditions
0.1
V
IFAULT = 1.1 mA, VCC1 = 5.5V
0.1
V
IFAULT = 1.1 mA, VCC1 = 3.3V
0.003
µA
VFAULT = 5.5 V, VCC1 = 5.5V
0.003
µA
VFAULT = 3.3 V, VCC1 = 3.3V
-0.75
A
VO = VCC2 – 4
A
VO = VCC2 – 15
A
VO = VEE + 2.5
A
VO = VEE + 15
3
mA
VOUT - VEE = 14 V
6
V
IO = 100 mA
V
IO = -650 µA
V
IO = 100 mA
-1.0
0.3
0.75
1.0
0.21
140
230
0.5
2.5
5
mA
IO = 0 mA
2.5
5
mA
IO = 0 mA
-0.24
-0.33
mA
Fig.
Note
4, 18
5
3
5, 19
2, 4,
20
5
7, 8,9
23
3, 5,
21
6, 7,
23
9
VDESAT = 2 V
8, 24
9, 10
mA
VDESAT = 7.0 V
25
7.5
V
VCC2 -VE >VUVLO-
9, 27
11.6
12.5
V
VO > 5 V
7, 9, 11
11.1
V
VO < 5 V
7, 9, 12
VUVLO-
9.2
10.3
UVLO Hysteresis
(VUVLO+
- VUVLO-)
0.4
1.3
Threshold Input Current
Low to High
IFLH
Threshold Input Voltage
High to Low
VFHL
0.8
Input Forward Voltage
VF
1.2
Temperature Coefficient
of Input Forward Voltage
DVF/DTA
Input Reverse Breakdown
Voltage
BVR
Input Capacitance
CIN
2.0
V
8
mA
IO = 0 mA, VO > 5 V
V
1.6
-1.3
5
70
1.95
V
IF = 10 mA
mV/°C
V
IR = 10 µA
pF
f = 1 MHz, VF = 0 V
9
Table 6. Switching Specifications (AC)
Unless otherwise noted, all typical values at TA = 25°C, VCC2 - VEE = 30 V, VE - VEE = 0 V; all Minimum/Maximum specifications are at Recommended Operating Conditions.
Parameter
Symbol
Min.
Typ.
Max.
Units
Test Conditions
Fig.
Note
Propagation Delay Time
to High Output Level
tPLH
100
180
250
ns
tPHL
100
180
250
ns
1, 10,
11, 12,
13, 26
13, 15
Propagation Delay Time
to Low Output Level
Rg = 20 W, Cg = 5 nF,
f = 10 kHz,
Duty Cycle = 50%,
IF = 10 mA, VCC2 = 30 V
Pulse Width Distortion
PWD
-100
20
100
ns
14, 17
Propagation Delay Difference
Between Any Two Parts or
Channels
(tPHL - tPLH)
PDD
-350
350
ns
17, 16
Rise Time
tR
50
ns
Fall Time
tF
50
ns
DESAT Sense to 90% VO Delay
tDESAT(90%)
0.15
0.3
µs
CDESAT = 100pF, RF=2.1kΩ,
Rg = 20 W, Cg = 5 nF,
VCC2 = 30 V
14, 27,
34
DESAT Sense to 10% VO Delay
tDESAT(10%)
1.1
1.5
µs
CDESAT = 100pF, RF=2.1kΩ ,
Rg = 20 W, Cg = 5 nF,
VCC2 = 30 V
15, 16,
17, 27,
34
DESAT Sense to Low Level
FAULT Signal Delay
tDESAT(FAULT)
0.25
0.5
µs
CDESAT = 100pF, RF = 2.1
kW,
Rg = 20 W, Cg = 5 nF,
VCC2 = 30 V
27, 34
18
DESAT Sense to DESAT
Low Propagation Delay
tDESAT(LOW)
0.25
µs
CDESAT = 100pF, RF = 2.1
kW,
Rg = 20 W, Cg = 5 nF,
VCC2 = 30 V
27, 34
19
DESAT Input Mute
tDESAT(MUTE)
5
34
20
RESET to High Level FAULT
Signal Delay
tRESET(FAULT)
0.3
1
2.0
µs
CDESAT = 100pF,
RF = 2.1 kW,
Rg = 20 W, Cg = 5 nF,
VCC1 = 5.5V, VCC2 = 30 V
0.8
1.5
2.5
µs
CDESAT = 100pF,
RF = 2.1 kW,
Rg = 20 W, Cg = 5 nF,
VCC1 = 3.3V, VCC2 = 30 V
µs
19
Output High Level Common
Mode Transient Immunity
|CMH|
15
25
kV/µs
TA = 25°C, IF = 10 mA
VCM = 1500 V, VCC2 = 30 V
28, 29,
30, 31
21
Output Low Level Common
Mode Transient Immunity
|CML|
15
25
kV/µs
TA = 25°C, VF = 0 V
VCM = 1500 V, VCC2 = 30 V
28, 29,
30, 31
22
Parameter
Symbol
Min.
Typ.
Input-Output Momentary
Withstand Voltage
VISO
3750
Input-Output Resistance
RI-O
Input-Output Capacitance
Output IC-to-Pins 9 &10
Thermal Resistance
Table 7. Package Characteristics
Max.
Units
Test Conditions
Fig.
Note
Vrms
RH < 50%, t = 1 min.,
TA = 25°C
6, 7
> 109
W
VI-O = 500 V
7
CI-O
1.3
pF
freq=1 MHz
q09-10
30
°C/W
TA = 25°C
Notes:
1. Derate linearly above 70°C free air temperature at a rate of 0.3 mA/°C.
2. In order to achieve the absolute maximum power dissipation specified, pins 4, 9, and 10 require ground plane connections and may require
airflow. See the Thermal Model section in the application notes at the end of this data sheet for details on how to estimate junction temperature
and power dissipation. In most cases the absolute maximum output IC junction temperature is the limiting factor. The actual power dissipation
achievable will depend on the application environment (PCB Layout, air flow, part placement, etc.). See the Recommended PCB Layout section
in the application notes for layout considerations. Output IC power dissipation is derated linearly at 10 mW/°C above 90°C. Input IC power
dissipation does not require derating.
3. Maximum pulse width = 10 µs. This value is intended to allow for component tolerances for designs with IO peak minimum = 1.0 A. Derate linearly from 2.0 A at +25°C to 1.5 A at +100°C. This compensates for increased IOPEAK due to changes in VOL over temperature.
4. This supply is optional. Required only when negative gate drive is implemented.
5. Maximum pulse width = 50 µs.
6. See the Slow IGBT Gate Discharge During Fault Condition section in the applications notes at the end of this data sheet for further details.
7. 15 V is the recommended minimum operating positive supply voltage (VCC2 - VE) to ensure adequate margin in excess of the maximum VUVLO+
threshold of 12.5 V. For High Level Output Voltage testing, VOH is measured with a dc load current. When driving capacitive loads, VOH will
approach VCC as IOH approaches zero units.
8. Maximum pulse width = 1.0 ms.
9. Once VO of the ACPL-331J is allowed to go high (VCC2 - VE > VUVLO), the DESAT detection feature of the ACPL-331J will be the primary source of
IGBT protection. UVLO is needed to ensure DESAT is functional. Once VUVLO+ > 12.5 V, DESAT will remain functional until VUVLO- < 9.2 V. Thus, the
DESAT detection and UVLO features of the ACPL-331J work in conjunction to ensure constant IGBT protection.
10. See the DESAT fault detection blanking time section in the applications notes at the end of this data sheet for further details.
11. This is the “increasing” (i.e. turn-on or “positive going” direction) of VCC2 - VE
12. This is the “decreasing” (i.e. turn-off or “negative going” direction) of VCC2 - VE
13. This load condition approximates the gate load of a 1200 V/75A IGBT.
14. Pulse Width Distortion (PWD) is defined as |tPHL - tPLH| for any given unit.
15. As measured from IF to VO.
16. The difference between tPHL and tPLH between any two ACPL-331J parts under the same test conditions.
17. As measured from ANODE, CATHODE of LED to VOUT
18. This is the amount of time from when the DESAT threshold is exceeded, until the FAULT output goes low.
19. This is the amount of time the DESAT threshold must be exceeded before VOUT begins to go low, and the FAULT output to go low. This is supply
voltage dependent.
20. Auto Reset: This is the amount of time when VOUT will be asserted low after DESAT threshold is exceeded. See the Description of Operation
(Auto Reset) topic in the application information section.
21. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the
output will remain in the high state (i.e., VO > 15 V or FAULT > 2 V). A 100 pF and a 2.1 kΩ pull-up resistor is needed in fault detection mode.
22. Common mode transient immunity in the low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the
output will remain in a low state (i.e., VO < 1.0 V or FAULT < 0.8 V).
23. To clamp the output voltage at VCC - 3 VBE, a pull-down resistor between the output and VEE is recommended to sink a static current of 650 µA
while the output is high. See the Output Pull-Down Resistor section in the application notes at the end of this data sheet if an output pull-down
resistor is not used.
0.25
0
VOL - OUTPUT LOW VOLTAGE - V
(VOH - VCC) - HIGH OUTPUT VOLTAGE DROP - V
Figure 1. Timing Curve
------I OUT = -100mA
____I OUT = -650uA
-0.5
-1
-1.5
-2
-2.5
0.2
0.15
0.1
0.05
0
-40
-3
-40
-20
0
20
40
60
80
100
-20
0
29.5
29.0
28.5
0.2
0.4
0.6
0.8
IOH - OUTPUT HIGH CURRENT - A
Figure 4. VOH vs. IOH
10
VOL - OUTPUT LOW VOLTAGE - V
(VOH - VCC) - HIGH OUTPUT VOLTAGE DROP - V
4
_ _ _ _ 100 o C
______ 25 o C
--------- -40 o C
0
60
80
100
oC
Figure 3. VOL vs. temperature
30.0
28.0
40
TA - TEMPERATURE -
TA - TEMPERATURE - o C
Figure 2. VOH vs. temperature
20
1
_ _ _ _ 100 o C
______ 25 o C
--------- -40 o C
3
2
1
0
0
0.5
1
IOL - OUTPUT LOW CURRENT - A
Figure 5. VOL vs. IOL
1.5
3.25
ICC2 - OUTPUT SUPPLY CURRENT - mA
ICC2 - OUTPUT SUPPLY CURRENT - mA
3.50
- ---- ---- I CC2 H
_________ I CC2 L
3.00
2.75
2.50
2.25
2.00
-40
-20
0
20
40
60
80
100
2.65
2.55
2.45
2.35
2.25
TA - TEMPERATURE - o C
Figure 6. ICC2 vs. temperature
VDESAT - DESAT THRESHOLD - V
ICH - BLANKING CAPACITOR
CHARGING CURRENT - mA
-0.30
-40
-20
0
20
40
60
80
6.5
6.0
100
TP - PROPAGATION DELAY - ns
TP - PROPAGATION DELAY - ns
0
20
40
300
200
150
0
20
40
60
TA - TEMPERATURE - oC
Figure 10. Propagation delay vs. temperature
11
-20
60
80
100
Figure 9. DESAT threshold vs. temperature
---------- t PLH
_______t PHL
-20
-40
TA - TEMPERATURE - o C
Figure 8. ICHG vs. temperature
100
-40
30
7.0
T A -TEMPERATURE - o C
250
20
25
VCC2 - SUPPLY VOLTAGE - V
7.5
-0.25
300
15
Figure 7. ICC2 vs. VCC2
-0.20
-0.35
--------- I CC2 H
_________ I CC2 L
80
100
---------- t PLH
_______t PHL
250
200
150
100
15
20
25
Vcc - SUPPLY VOLTAGE - V
Figure 11. Propagation delay vs. supply voltage
30
300
250
TP - PROPAGATION DELAY - ns
---------- t PLH
_______t PHL
200
150
100
0
10
20
30
LOAD RESISTANCE - ohm
40
TDESAT90% - DESAT Sense to 90% Vo Delay - ns
200
150
0
20
40
100
0
10
20
60
80
100
2.0
1.5
1.0
0.5
0.0
-40
-20
0
2.0
1.0
30
40
LOAD RESISTANCE-ohm
Figure 16. DESAT sense to 10% VOUT delay vs. load resistance
12
50
TDESAT10% - DESAT Sense to 10% Vo Delay - ns
TDESAT10% - DESAT Sense to 10% Vo Delay - ns
------- V cc2 =15V
_____ V cc2 =30V
20
20
40
60
80
100
Figure 15. DESAT sense to 10% VOUT delay vs. temperature
4.0
10
50
T A - TEMPERATURE - o C
Figure 14. DESAT sense to 90% VOUT delay vs. temperature
0.0
40
------- V cc2 =15V
_____ V cc2 =30V
T A - TEMPERATURE - o C
3.0
30
Figure 13. Propagation delay vs. load capacitance
250
-20
200
LOAD CAPACITANCE - nF
Figure 12. Propagation delay vs. load resistance
100
-40
---------- t PLH
_______ t PHL
0
50
TDESAT10% - DESAT Sense to 10% Vo Delay - ns
TP - PROPAGATION DELAY - ns
300
0.012
------- V cc2 =15V
_____ V cc2 =30V
0.008
0.004
0.000
0
10
20
30
40
LOAD CAPACITANCE-nF
Figure 17. DESAT sense to 10% VOUT delay vs. load capacitance
50
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
VE 16
VLED 15
DESAT
14
VCC2 13
0.1µF
15V Pulsed
VEE 12
IOUT
VOUT 11
10mA
VCLAMP
10
VEE
9
+_
+_
0.1µF
30V
Figure 18. IOH Pulsed test circuit
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
0.1µF
15V Pulsed
IOUT
+_
0.1µF
+_
30V
Figure 19. IOL Pulsed test circuit
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
10mA
VOUT
0.1µF
100mA
Figure 20. VOH Pulsed test circuit
13
0.1µF
+_
30V
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
0.1µF
100mA
VOUT
+_
0.1µF
30V
Figure 21. VOL Pulsed test circuit
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
10mA
0.1µF
ICC2
0.1µF
Figure 22. ICC2H test circuit
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
Figure 23. ICC2L test circuit
14
0.1µF
ICC2
0.1µF
+_
30V
+_
30V
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
ICHG
10mA
0.1µF
+_
0.1µF
Figure 24. ICHG Pulsed test circuit
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
7V
+_
1
0.1µF
IDSCHG
0.1µF
+_
30V
Figure 25. IDSCHG test circuit
10mA, 10kHz,
50% Duty Cycle
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
Figure 26. tPLH, tPHL, tf, tr, test circuit
15
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
0.1µF
VOUT
20Ω
5nF
0.1µF
+_
30V
30V
2.1kΩ
VFAULT
5V
+_
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
ANODE
7
ANODE
8
CATHODE
10mA
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
VOUT
11
VCLAMP
10
VEE
9
VIN
0.1µF
VOUT
20Ω
+_
0.1µF
30V
5nF
Figure 27. tDESAT fault test circuit
5V
2.1kΩ
15pF
0.1µF
SCOPE
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
30V
20Ω
0.1µF
430Ω
5nF
VCM
Figure 28. CMR Test circuit LED2 off
5V
2.1kΩ
15pF
0.1µF
SCOPE
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
30V
20Ω
0.1µF
430Ω
Figure 29. CMR Test Circuit LED2 on
16
VCM
5nF
5V
2.1kΩ
15pF
F
0.1µF
µ
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
30V
SCOPE
20Ω
0.1µF
µ
430Ω
5nF
VCM
Figure 30. CMR Test circuit LED1 off
5V
2.1kΩ
15pF
0.1µF
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
30V
SCOPE
20Ω
0.1µF
430Ω
VCM
Figure 31. CMR Test Circuit LED1 on
17
5nF
Application Information
Product Overview Description
The ACPL-331J is a highly integrated power control
device that incorporates all the necessary components
for a complete, isolated IGBT / MOSFET gate drive circuit
with fault protection and feedback into one SO-16
package. Active Miller clamp function eliminates the need
of negative gate drive in most application and allows the
use of simple bootstrap supply for high side driver. An
optically isolated power output stage drives IGBTs with
power ratings of up to 100 A and 1200 V. A high speed
internal optical link minimizes the propagation delays
between the microcontroller and the IGBT while allowing
the two systems to operate at very large common mode
voltage differences that are common in industrial motor
drives and other power switching applications. An output
IC provides local protection for the IGBT to prevent
damage during over current, and a second optical link
provides a fully isolated fault status feedback signal for
the microcontroller. A built in “watchdog” circuit, UVLO
monitors the power stage supply voltage to prevent IGBT
caused by insufficient gate drive voltages. This integrated
IGBT gate driver is designed to increase the performance
and reliability of a motor drive without the cost, size, and
complexity of a discrete design.
Two light emitting diodes and two integrated circuits
housed in the same SO-16 package provide the input
control circuitry, the output power stage, and two optical
channels. The output Detector IC is designed manufactured on a high voltage BiCMOS/Power DMOS process.
The forward optical signal path, as indicated by LED1,
transmits the gate control signal. The return optical signal
path, as indicated by LED2, transmits the fault status
feedback signal.
Under normal operation, the LED1 directly controls the
IGBT gate through the isolated output detector IC, and
LED2 remains off. When an IGBT fault is detected, the
output detector IC immediately begins a “soft” shutdown
sequence, reducing the IGBT current to zero in a controlled manner to avoid potential IGBT damage from
inductive over voltages. Simultaneously, this fault status
is transmitted back to the input via LED2, where the fault
latch disables the gate control input and the active low
fault output alerts the microcontroller.
During power-up, the Under Voltage Lockout (UVLO)
feature prevents the application of insufficient gate
voltage to the IGBT, by forcing the ACPL-331J’s output
low. Once the output is in the high state, the DESAT (VCE)
detection feature of the ACPL-331J provides IGBT protection. Thus, UVLO and DESAT work in conjunction to
provide constant IGBT protection.
18
13
VCC2
UVLO
ANODE
CATHODE
6, 7
D
R
I
V
E
R
5, 8
LED1
11
14
DESAT
9, 12
SHIELD
VOUT
DESAT
VEE
VCLAMP
VCC1
FAULT
VS
2
3
10
LED2
16
1, 4
15
SHIELD
VCLAMP
VE
VLED
Figure 32. Block Diagram of ACPL-331J
Recommended Application Circuit
The ACPL-331J has an LED input gate control, and an
open collector fault output suitable for wired ‘OR’ applications. The recommended application circuit shown
in Figure 33 illustrates a typical gate drive implementation using the ACPL-331J. The following describes about
driving IGBT. However, it is also applicable to MOSFET.
Depending upon the MOSFET or IGBT gate threshold requirements, designers may want to adjust the VCC supply
voltage (Recommended VCC = 17.5V for IGBT and 12.5V
for MOSFET).
The two supply bypass capacitors (0.1 µF) provide the
large transient currents necessary during a switching
transition. Because of the transient nature of the charging
currents, a low current (5mA) power supply suffices. The
desaturation diode DDESAT 600V/1200V fast recovery type,
trr below 75ns (e.g. ERA34-10) and capacitor CBLANK are
necessary external components for the fault detection
circuitry. The gate resistor RG serves to limit gate charge
current and controls the IGBT collector voltage rise
and fall times. The open collector fault output has a
passive pull-up resistor RF (2.1 kW) and a 330 pF filtering
capacitor, CF. A 47 kW pull down resistor RPULL-DOWN on
VOUT provides a predictable high level output voltage
(VOH). In this application, the IGBT gate driver will shut
down when a fault is detected and fault reset by next
cycle of IGBT turn on. Application notes are mentioned at
the end of this datasheet.
+
_
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
VE 16
VLED 15
RF
0.1µF
0.1µF 0.1µF
DESAT 14
CF
CBLANK
100 Ω
DDESAT
RG
+
_
VCC2 13
VEE 12
6
ANODE
VOUT 11
7
ANODE
VCLAMP 10
8
CATHODE
Q1
R
+
_
VEE
+
VCE
-
RPULL--DOWN
9
Q2
+
VCE
-
+ HVDC
3-PHASE
AC
- HVDC
Figure 33. Recommended application circuit (Single Supply) with desaturation detection and active Miller Clamp
Description of Operation
Normal Operation
During normal operation, VOUT of the ACPL-331J is controlled by input LED current IF (pins 5, 6, 7 and 8), with
the IGBT collector-to-emitter voltage being monitored
through DDESAT. The FAULT output is high. See Figure 34.
Figure 34. Fault Timing diagramactivated is an internal
feedback channel which brings the FAULT output low for
the purpose of notifying the micro-controller of the fault
condition.
Fault Condition
Fault Reset
The DESAT pin monitors the IGBT Vce voltage. When the
voltage on the DESAT pin exceeds 6.5 V while the IGBT is
on, VOUT is slowly brought low in order to “softly” turn-off
the IGBT and prevent large di/dt induced voltages. Also
Once fault is detected, the output will be muted for 5 μs
(minimum). All input LED signals will be ignored during
the mute period to allow the driver to completely soft
shut-down the IGBT. The fault mechanism can be reset by
the next LED turn-on after the 5us (minimum) mute time.
See Figure 34.
tDESAT(LOW)
IF
Reset done
during the
next LED
turn-on
6.5V
50%
VDESAT
tDESAT(10%)
VOUT
90%
10%
tDESAT(90%)
FAULT
50%
tDESAT(FAULT)
tDESAT(MUTE))
Figure 34. Fault Timing diagram
19
tRESET(FAULT)
50%
Output Control
Slow IGBT Gate Discharge during Fault Condition
The outputs (VOUT and FAULT) of the ACPL-331J are controlled by the combination of IF, UVLO and a detected
IGBT Desat condition. Once UVLO is not active (VCC2 - VE >
VUVLO), VOUT is allowed to go high, and the DESAT (pin 14)
detection feature of the ACPL-331J will be the primary
source of IGBT protection. UVLO is needed to ensure
DESAT is functional. Once VUVLO+ > 10.5V, DESAT will
remain functional until VUVLO- < 11.1V. Thus, the DESAT
detection and UVLO features of the ACPL-331J work in
conjunction to ensure constant IGBT protection.
When a desaturation fault is detected, a weak pull-down
device in the ACPL-331J output drive stage will turn on
to ‘softly’ turn off the IGBT. This device slowly discharges
the IGBT gate to prevent fast changes in drain current
that could cause damaging voltage spikes due to lead
and wire inductance. During the slow turn off, the large
output pull-down device remains off until the output
voltage falls below VEE + 2 Volts, at which time the large
pull down device clamps the IGBT gate to VEE.
Desaturation Detection and High Current Protection
The ACPL-331J satisfies these criteria by combining a
high speed, high output current driver, high voltage
optical isolation between the input and output, local IGBT
desaturation detection and shut down, and an optically
isolated fault status feedback signal into a single 16-pin
surface mount package.
The fault detection method, which is adopted in the
ACPL-331J is to monitor the saturation (collector)
voltage of the IGBT and to trigger a local fault shutdown
sequence if the collector voltage exceeds a predetermined threshold. A small gate discharge device slowly
reduces the high short circuit IGBT current to prevent
damaging voltage spikes. Before the dissipated energy
can reach destructive levels, the IGBT is shut off. During
the off state of the IGBT, the fault detect circuitry is simply
disabled to prevent false ‘fault’ signals.
The alternative protection scheme of measuring IGBT
current to prevent desaturation is effective if the short
circuit capability of the power device is known, but
this method will fail if the gate drive voltage decreases
enough to only partially turn on the IGBT. By directly
measuring the collector voltage, the ACPL-331J limits
the power dissipation in the IGBT even with insufficient
gate drive voltage. Another more subtle advantage of the
desaturation detection method is that power dissipation
in the IGBT is monitored, while the current sense method
relies on a preset current threshold to predict the safe
limit of operation. Therefore, an overly conservative over
current threshold is not needed to protect the IGBT.
DESAT Fault Detection Blanking Time
The DESAT fault detection circuitry must remain disabled
for a short time period following the turn-on of the IGBT
to allow the collector voltage to fall below the DESAT
threshold. This time period, called the DESAT blanking
time is controlled by the internal DESAT charge current,
the DESAT voltage threshold, and the external DESAT
capacitor.
The nominal blanking time is calculated in terms of
external capacitance (CBLANK), FAULT threshold voltage
(VDESAT ), and DESAT charge current (ICHG) as tBLANK =
CBLANK x VDESAT / ICHG. The nominal blanking time with
the recommended 100pF capacitor is 100pF * 6.5 V / 240
µA = 2.7 µsec.
The capacitance value can be scaled slightly to adjust the
blanking time, though a value smaller than 100 pF is not
recommended. This nominal blanking time represents
the longest time it will take for the ACPL-331J to respond
to a DESAT fault condition. If the IGBT is turned on while
the collector and emitter are shorted to the supply rails
(switching into a short), the soft shut-down sequence
will begin after approximately 3 µsec. If the IGBT collector
and emitter are shorted to the supply rails after the IGBT
is already on, the response time will be much quicker due
to the parasitic parallel capacitance of the DESAT diode.
The recommended 100pF capacitor should provide
adequate blanking as well as fault response times for
most applications.
IF
UVLO (VCC2 – VE)
Desat Condition Detected on Pin 14
Pin 3 (FAULT) Output
VOUT
X
Active
X
X
Low
X
X
Yes
Low
Low
OFF
X
X
X
Low
ON
Not Active
No
High
High
20
Under Voltage Lockout
The ACPL-331J Under Voltage Lockout (UVLO) feature is
designed to prevent the application of insufficient gate
voltage to the IGBT by forcing the ACPL-331J output
low during power-up. IGBTs typically require gate
voltages of 15 V to achieve their rated VCE(ON) voltage.
At gate voltages below 13 V typically, the VCE(ON) voltage
increases dramatically, especially at higher currents. At
very low gate voltages (below 10 V), the IGBT may operate
in the linear region and quickly overheat. The UVLO
function causes the output to be clamped whenever insufficient operating supply (VCC2) is applied. Once VCC2
exceeds VUVLO+ (the positive-going UVLO threshold), the
UVLO clamp is released to allow the device output to turn
on in response to input signals. As VCC2 is increased from
0 V (at some level below VUVLO+), first the DESAT protection circuitry becomes active. As VCC2 is further increased
(above VUVLO+), the UVLO clamp is released. Before the
time the UVLO clamp is released, the DESAT protection
is already active. Therefore, the UVLO and DESAT Fault
detection feature work together to provide seamless protection regardless of supply voltage (VCC2).
Active Miller Clamp
A Miller clamp allows the control of the Miller current
during a high dV/dt situation and can eliminate the use
of a negative supply voltage in most of the applications.
During turn-off, the gate voltage is monitored and the
clamp output is activated when gate voltage goes below
2V (relative to VEE). The clamp voltage is VOL+2.5V typ
for a Miller current up to 1100mA. The clamp is disabled
when the LED input is triggered again.
Other Recommended Components
The application circuit in Figure 33 includes an output
pull-down resistor, a DESAT pin protection resistor, a
FAULT pin capacitor, and a FAULT pin pullup resistor and
Active Miller Clamp connection.
Output Pull-Down Resistor
During the output high transition, the output voltage
rapidly rises to within 3 diode drops of VCC2. If the output
current then drops to zero due to a capacitive load, the
output voltage will slowly rise from roughly VCC2-3(VBE)
to VCC2 within a period of several microseconds. To limit
the output voltage to VCC2-3(VBE), a pull-down resistor,
RPULL-DOWN between the output and VEE is recommended
to sink a static current of several 650 µA while the output
is high. Pull-down resistor values are dependent on the
amount of positive supply and can be adjusted according
to the formula, Rpull-down = [VCC2-3 * (VBE)] / 650 µA.
21
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
VCC
RG
RPULL-DOWN
Figure 35. Output pull-down resistor.
DESAT Pin Protection Resistor
The freewheeling of flyback diodes connected across
the IGBTs can have large instantaneous forward voltage
transients which greatly exceed the nominal forward
voltage of the diode. This may result in a large negative
voltage spike on the DESAT pin which will draw substantial current out of the driver if protection is not used. To
limit this current to levels that will not damage the driver
IC, a 100 ohm resistor should be inserted in series with
the DESAT diode. The added resistance will not alter the
DESAT threshold or the DESAT blanking time.
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
6
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
Figure 36. DESAT pin protection.
100pF
100 Ω
VCC
RG
DDESAT
Capacitor on FAULT Pin for High CMR
Pull-up Resistor on FAULT Pin
Rapid common mode transients can affect the fault pin
voltage while the fault output is in the high state. A 330
pF capacitor should be connected between the fault pin
and ground to achieve adequate CMOS noise margins at
the specified CMR value of 15 kV/µs. The added capacitance does not increase the fault output delay when a
desaturation condition is detected.
The FAULT pin is an open collector output and therefore
requires a pull-up resistor to provide a high-level signal.
Also the FAULT output can be wire ‘OR’ed together with
other types of protection (e.g. over-temperature, overvoltage, over-current ) to alert the microcontroller.
Other Possible Application Circuit (Output Stage)
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
0.1µF 0.1µF
0.1µF
6
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
Optional R2
RG
Optional R1
+_
Q1
RPULL-DOWN
+_
*
Q2
+
VCE
+
VCE
-
+ HVDC
3-PHASE
AC
- HVDC
Figure 37. IGBT drive with negative gate drive, external booster and desaturation detection (VCLAMP should be connected to VEE when it is not used) VCLAMP is
used as secondary gate discharge path. * indicates component required for negative gate drive topology
1
VS
2
VCC1
3
FAULT
4
VS
5
CATHODE
VE
16
VLED
15
DESAT
14
VCC2
13
VEE
12
0.1µF 0.1µF
0.1µF
6
ANODE
VOUT
11
7
ANODE
VCLAMP
10
8
CATHODE
VEE
9
Optional R2
RG
Optional R1
+_
Q1
RPULL-DOWN
+_
*
Q2
+
VCE
+
VCE
-
R3
Figure 38. Large IGBT drive with negative gate drive, external booster. VCLAMP control secondary discharge path for higher power application.
22
+ HVDC
3-PHASE
AC
- HVDC
Related Application Notes
AN5314 – Active Miller Clamp (Year 2007)
AN5315 – “Soft” Turn-off Feature (Year 2007)
AN1087 – Thermal Data for Optocouplers
AN1043 – Common-Mode Noise : Sources and Solutions
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Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved.
AV02-0119EN - April 24, 2008